UNISONIC TECHNOLOGIES CO., LTD 2SC5569
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1 UNISONIC TECHNOLOGIES CO., LTD SC69 DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to SA6. SOT-89 APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes ORDERING INFORMATION Pin Assignment Ordering Number Package Packing SC69G-x-AB-R SOT-89 B C E Tape Reel Note: Pin assignment: E: Emitter B: Base C: Collector MARKING of Copyright 4 Unisonic Technologies Co., Ltd QW-R4-.B
2 SC69 ABSOLUTE MAXIMUM RATINGS (T A = C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 8 V Collector-Emitter Voltage V CEO V Emitter-Base Voltage V EBO 6 V Collector Current I c A Collector Current (Pulse) I cp A Base Current I B. A Collector Dissipation (Note ). W P C Collector Dissipation (T C = C). W Junction Temperature T J C Storage Temperature T STG - ~ + C Note:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.. Mounted on ceramic board (mm.8mm) ELECTRICAL CHARACTERISTICS (Ta=, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage V (BR)CBO I c =μa,i E = 8 V Breakdown Voltage V (BR)CEO I c =ma,r BE = V Emitter to Base Breakdown Voltage V (BR)EBO I E =μa,i E = 6 V Collector Cut-Off Current I CBO V CB =4V,I E =. μa Emitter Cut-Off Current I EBO V EB =4V,I c =. μa DC Current Gain h FE V CE =V,I c =ma 6 Saturation Voltage V CE(SAT) I c =.A,I B =ma 6 4 mv I c =A,I B =4mA mv Base to Emitter Saturation Voltage V BE(SAT) I c =A,I B =4mA.8. V Gain Bandwidth Product f T V CE =V,I c =ma MHz Output Capacitance C OB V CB =V, f=mhz 8 pf Turn-On Time T ON See specified Test Circuit ns Storage Time T STG See specified Test Circuit 4 ns Fall Time T F See specified Test Circuit ns UNISONIC TECHNOLOGIES CO., LTD of QW-R8-.B
3 SC69 SWITCHING TIME TEST CIRCUIT UNISONIC TECHNOLOGIES CO., LTD of QW-R8-.B
4 SC69 TYPICAL CHARACTERISTICS 6 Collector Current vs. Voltage 9mA ma 8mA ma 6mA ma 4mA ma 4 ma ma IB= Voltage, V CE (V) Collector Current vs.base to Emitter Voltage 8 V CE =V 6 4 TA= C - C C Base to Emitter Voltage, V BE (V) DC Current Gain,hFE DC Current Gain vs.collector Current V CE =V TA= C C - C... Saturation Voltage, V CE(SAT) (mv) Saturation Voltage vs.collector Current TA= C - C I C /I B =.... C Collector Current vs. Voltage ICP=A ms IC=A.. TC= C Single pulse For PNP,the minus sign is omitted.... ms ms DC operation μs μs Voltage, V CE (V) UNISONIC TECHNOLOGIES CO., LTD 4 of QW-R8-.B
5 SC69 TYPICAL CHARACTERISTICS (Cont.) Collector Dissipation, PC (W) Collector Dissipation, PC (W) Output Capacitance, COB (pf) Gain Bandwidth Produtc, ft (MHz) Saturation Voltage, V CE(SAT) (mv) Saturation Voltage, V BE(SAT) (mv) Mounted on a ceramic board (mm.8mm ) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD of QW-R8-.B
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UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
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UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
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UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
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UNISONIC TECHNOLOGIES CO., LTD 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state
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UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
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UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
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