DATA SHEET. PBSS4160T 60 V, 1 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 24

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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 23 Jun May 2

2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS Major application segments: Automotive 42 V power Telecom infrastructure Industrial. Power management: DC-to-DC conversion Supply line switching. Peripheral driver Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low V CEsat transistor in a SOT23 plastic package. PNP complement: PBSS56T. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT V CEO collector-emitter voltage 6 V I C collector current (DC) A I CM peak collector current 2 A R CEsat equivalent on-resistance 25 mω PINNING PIN DESCRIPTION base 2 emitter 3 collector Top view MAM255 Fig. Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER MARKING CODE () *U5 Note. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 24 May 2 2

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 634). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 8 V V CEO collector-emitter voltage open base 6 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) note.9 A note 2 A I CM peak collector current t = ms or limited by T j(max) 2 A I B base current (DC) 3 ma I BM peak base current t p 3 µs; δ.2 A P tot total power dissipation T amb 25 C; note 27 mw T amb 25 C; note 2 4 mw T amb 25 C; notes and 3.25 W T stg storage temperature C T j junction temperature 5 C T amb operating ambient temperature C Notes. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, cm 2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle δ 2%, pulse width t p ms. 5 P tot (mw) 4 MLE28 3 () T amb ( C) () Device mounted with cm 2 collector tab. Device mounted on standard footprint. Fig.2 Power derating curves. 24 May 2 3

4 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a) Notes thermal resistance from junction to ambient in free air; note 465 K/W in free air; note 2 32 K/W in free air; notes and 3 K/W. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and cm 2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle δ 2%, pulse width t p ms. 3 handbook, full pagewidth MLE27 Z th (K/W) 2 δ = t p (s) Mounted on printed-circuit board; standard footprint. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 24 May 2 4

5 CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector-base cut-off current V CB = 6 V; I E =A na V CB = 6 V; I E = A; T j = 5 C 5 µa I CES collector-emitter cut-off current V CE = 6 V; V BE =A na I EBO emitter-base cut-off current V EB =5V; I C =A na h FE DC current gain V CE =5V; I C = ma 25 4 V CE =5V; I C = 5 ma; note 2 35 V CE =5V; I C = A; note 5 V CEsat collector-emitter saturation voltage I C = ma; I B =ma 9 mv I C = 5 ma; I B =5mA 4 mv I C = A; I B = ma; note 2 25 mv V BEsat base-emitter saturation voltage I C = A; I B =5mA.95. V R CEsat equivalent on-resistance I C = A; I B = ma; note 2 25 mω V BEon base-emitter turn-on voltage V CE =5V; I C =A.82.9 V f T transition frequency I C = 5 ma; V CE =V; 5 22 MHz f = MHz C c collector capacitance V CB =V;I E =I e = A; f = MHz 5.5 pf Note. Pulse test: t p 3 µs; δ.2. 8 MLE3.2 MLE33 h FE 6 () V BE (V).8 () V CE =5V. () T amb = C. T amb =25 C. T amb = 55 C. V CE =5V. () T amb = 55 C. T amb =25 C. T amb = C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Base-emitter voltage as a function of collector current; typical values. 24 May 2 5

6 MLE35 MLE4 V CEsat (V) V CEsat (V) () 2 () 3 I C /I B =. () T amb = C. T amb =25 C. T amb = 55 C I C /I B = 2. () T amb = C. T amb =25 C. T amb = 55 C. Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. MLE29.2 MLE34 V CEsat (V) V BEsat (V) () () T amb =25 C. () I C /I B =. I C /I B = 5. I C /I B = 2. () T amb = 55 C. T amb =25 C. T amb = C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 24 May 2 6

7 2 I C (A).6 (6) (5) (4) () MLE3 3 R CEsat (Ω) 2 MLE32 (7).2 (8).8 (9) () V CE (V) T amb =25 C. () () I B = 6 ma. I B = 54 ma. I B = 48 ma. (4) I B = 42 ma. (5) I B = 36 ma. (6) I B = 3 ma. (7) I B = 24 ma. (8) I B = 8 ma. (9) I B = 2 ma. () I B = 6 ma. Fig. Collector current as a function of collector-emitter voltage; typical values. I C /I B = 2. () T amb = C. T amb =25 C. T amb = 55 C. Fig. Equivalent on-resistance as a function of collector current; typical values. 24 May 2 7

8 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 2 c e bp w M B Lp e detail X 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE May 2 8

9 DATA SHEET STATUS LEVEL DATA SHEET STATUS () PRODUCT STATUS DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify for any damages resulting from such application. Right to make changes reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 24 May 2 9

10 a worldwide company Contact information For additional information please visit Fax: For sales offices addresses send to: sales.addresses@ Koninklijke Philips Electronics N.V. 24 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/2/pp Date of release: 24 May 2 Document order number: