FHX76LP Super Low Noise HEMT

Transcription

1 FEATURES Low Noise Figure: NF=.dB High Associated Gain: Gas=13.5dB High Reliability Small Size SMT Package Tape and Reel Packaging Available FHX76LP DESCRIPTION The FHX76LP is a low noise SuperHEMT TM product designed for DBS receiver applications. This device uses a small ceramic package. Eudyna s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 5 C) Parameter Symbol Condition Rating Unit Drain-Source oltage DS 3.5 Gate-Source oltage GS -3. Total Power Dissipation Pt Note 18 mw Storage Temperature TSTG -65 to C Channel Temperature TCH C Note: Mounted on Al O 3 board (3 x 3 x.65mm) FHX76LP is designed for a low noise front-end amplifier. Eudyna Devices Inc. does not recommend using this device at large signal operation due to the reliability concern. 1. The drain-source operating voltage should not exceed and drain current should be 1mA.. The forward and reverse gate currents should not exceed 3uA and -3 ua respectively. 3. If usage conditions other than the aforementioned are expected, please contact to sales representative. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=5 C) Item Saturated Drain Current Transconductance Symbol I DSS gm Conditions DS =, GS = DS =, I DS =1mA Min Limits Typ. 3 5 Max. 6 - Pinch-Off oltage p DS =, I DS =1mA Gate-Source Breakdown oltage GSO I GS = -1µA Noise Figure NF DS =, -..5 db I DS = 1mA, Associated Gain Gas f=1ghz db Thermal Resistance Rth Channel to Case - 3 C/W CASE STYLES: LP Note: RF parameters for LP devices are measured on a sample basis as follows: Lot qty. Sample qty. Accept/Reject 1 or less (,1) 11 to 3 (,1) 31 to 1 3 (1,) 11 or over 5 (1,) Unit ma ms Edition 1.a August 7 1

2 POWER DERATING CURE DRAIN CURRENT vs. DRAIN-SOURCE OLTAGE Total Power Dissipation (mw) Ambient Temperature ( C) 3 1 GS = Drain-Source oltage () NF & Gas vs. FREQUENCY NF & Gas vs. IDS Noise Figure (db) IDS=1mA Gas NF Associated Gain (db) Noise Figure (db) f=1ghz Gas NF Associated Gain (db) Frequency (GHz)

3 TYPICAL NOISE FIGURE CIRCLE +j5 +j5 +j1 +j1 -j dB.5 Γopt j5 -j5 f=1ghz IDS=1mA Γopt= Rn/5=.6 NFmin=.dB -j5 -j1 -j5 NOISE PARAMETERS, IDS=1MA Ga(max) AND S1 vs. FREQUENCY 5 Freq. Γopt (GHz) (MAG) (ANG) NFmin (db) Rn/ Gain (db) 1 5 Ga(max) S 1 IDS=1mA Frequency (GHz) 3

4 POWER DERATING CURE DRAIN CURRENT vs. DRAIN-SOURCE OLTAGE Total Power Dissipation (mw) Ambient Temperature ( C) 3 1 GS = Drain-Source oltage () S-PARAMETERS DS =, I DS = 1mA FREQUENCY S11 S1 S1 S (MHZ) MAG ANG MAG ANG MAG ANG MAG ANG NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (.1mm length, 5µm Dia Au wire) Drain n=1 (.1mm length, 5µm Dia Au wire) Source n= (.mm length, 5µm Dia Au wire)

5 Case Style "LP" Metal-Ceramic Package 1.5 ±.5 (.59).78±.5 (.188) (.7) 1.5 ±.5 (.59) ±.5 (.59) 1.78±. (.7) 1. Min (.39) (.7).78±.5 (.188).5 (.) ±.5 (.59) 1.78±. (.7) 1.3 Max (.51).1 (.) 1: Gate : Source (Flange) 3: Drain : Source (Flange) Unit: mm (Inches) For further information please contact: Eudyna Devices USA Inc. 355 Zanker Rd. San Jose, CA , U.S.A. TEL: (8) 3-95 FAX: (8) Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 FJ United Kingdom TEL: + () FAX: + () Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 111, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: FAX: Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, -85, Japan TEL: FAX: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put this product into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. Eudyna Devices USA Inc. Printed in U.S.A. 5