Eudyna s stringent Quality Assurance Program assures the highest reliability and consistent performance. dbm Storage Temperature

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1 FEATURES High Output Power:.5dBm(typ.) High Linear Gain: 31.0dB(typ.) Low Input VSWR Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package(VF-pkg) DESCRIPTION The FMM5054VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications in the to 14.5GHz frequency range. This product is well suited for VSAT applications as it offers high power, high gain, and low VSWR. FMM5054VF Ku Band Power Amplifier MMIC Device の写真 Eudyna s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Rating Unit DC Input Voltage VDD +10 V DC Input Voltage VGG -3 V Input Power Pin +23 dbm Storage Temperature Tstg to +125 o C RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Unit DC Input Voltage VDD <=8 V Operating Case Temperature Tc to +85 o C Intermodulation Distortion IM 3 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Item Symbol Condition Limit Min. Typ. Max. Unit Gate Bias Voltage VGG(DC) V Output Power at 1dB G.C.P. P1dB dbm Power Gain at 1dB G.C.P. G1dB VDD=7V IDD=mA(typ.) db Drain Current at P1dB IDD(RF) f = GHz ma Power Added Efficiency at P1dB ηadd % Gain Flatness G db Input Return Loss RL in db Pin<-5dBm Output Return Loss RL out - -6 db 2-Tone Test dbc f=10mhz Pout=.5dBm S.C.L. G.C.P. : Gain Compression Point, S.C.L. : Single Carrier Level ESD Class 0 Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) ~ 199V CASE STYLE VF Edition 1 July 04 1

2 FMM5054VF OUTPUT POWER vs. FREQUENCY P1dB VDD=7V, IDD=mA Pin=7dBm Pin=0dBm Pin=-2dBm Pin=-6dBm Pin=-1 0dBm Frequency [GHz] GHz GHz GHz GHz OUTPUT POWER, IDD vs. INPUT POWER VDD=7V, IDD=mA POWER ADDED EFFICIENCY vs FREQUENCY IMD vs TOTAL OUTPUT POWER Power Added Efficiency [%] VDD=7V, IDD=mA P1dB Pin=7dBm Pin=0dBm Pin=-2dBm Pin=-6dBm 4 Pin=dBm Frequency [GHz] GHz GHz GHz GHz VDD=7V, IDD=mA, f=+10mhz

3 OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage FMM5054VF - 6V - 7V - 8V 13.75GHz V - 7V - 8V 14.00GHz V - 7V - 8V 14.25GHz V - 7V - 8V 14.50GHz

4 OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current - 600mA - ma - 800mA 13.75GHz mA - ma - 800mA 14.00GHz GHz 14.50GHz - 600mA - ma - 800mA mA - ma - 800mA

5 IMD PERFORMANCE vs OUTPUT POWER by Drain Voltage FMM5054VF IDD=mA, 13.75GHz - 6V - - 7V - 8V IDD=mA, 14.00GHz - 6V - - 7V - 8V IDD=mA, 14.25GHz - 6V - 7V - - 8V V - 7V - 8V IDD=mA, 14.50GHz

6 OUTPUT POWER, DRAIN CURRENT vs. TOTAL INPUT POWER by Drain Current mA - ma - 800mA VDD=7V, 13.75GHz mA - ma - 800mA VDD=7V, 14.00GHz VDD=7V, 14.25GHz VDD=7V, 14.50GHz - 600mA - - ma - 800mA mA - - ma - 800mA

7 Ku Band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Temperature VDD=7V, 13.75GHz VDD=7V, 14.00GHz OutPut Power [dbm] - o C o C o C VDD=7V, 14.25GHz - o C o C o C o C o C o C o C o C o C VDD=7V, 14.50GHz

8 IMD PERFORMANCE vs. TOTAL OUTPUT POWER by Temperature - - VDD=7V, IDD=mA, 13.75GHz - o C o C o C VDD=7V, IDD=mA, 14.00GHz - o C o C o C VDD=7V, IDD=mA, 14.25GHz - o C o C o C VDD=7V, IDD=mA, 14.50GHz - o C o C o C

9 Ku Band Power Amplifier MMIC P1dB and G1dB vs. TEMPERATURE IMD PERFORMANCE vs. TEMPERATURE P1dB [dbm] GHz GHz GHz GHz VDD=7V, IDD=mA Temperature [ o C] G1dB [db] VDD=7V, IDD=mA, f=+10mhz, Pout=.5dBm S.C.L GHz GHz GHz GHz Temperature [ o C] P1dB and G1dB vs. Drain Voltage INTERMODULATION DISTORTION vs. Drain Voltage IDD=mA VDD=7V, IDD=mA, f=+10mhz, Pout=.5dBm S.C.L. P1dB [dbm] GHz GHz GHz GHz Vdd [V] G1dB [dbm] GHz GHz GHz GHz Vdd [V] 9

10 S-PARAMETER INPUT/OUTPUT RETURN LOSS vs. FREQUENCY Vdd=7V, Idd=mA, Pin=- dbm 5 Input/Output Return Loss [db] Input Returen Loss - Output Return Loss Frequency [GHz] SMALL SIGNAL GAIN vs. FREQUENCY Vdd=7V, Idd=mA, Pin=-dBm Small Signal Gain [db] Frequency [GHz] 10

11 Ku Band Power Amplifier MMIC S-PARAMETER VDD=7.0V, IDD=mA FREQUENCY S11 S21 S12 S [GHz] MAG ANG MAG ANG MAG ANG MAG ANG

12 Tch vs. DRAIN VOLTAGE (Reference Data) IDD=mA Tch [ o C] Vdd [V] MTTF vs. Tch 1.E+12 1.E+11 1.E+10 Ea=1.56eV MTTF [ hrs ] 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E Tch [ o C ] 12

13 Ku Band Power Amplifier MMIC Package Outline PIN ASSIGMENT 1 : VGG 2 : RF in 3 : VGG 4 : VDD 5 : RF out 6 : VDD 13

14 Mounting Instructions for VF Package 1. Screw Mounting (1) The flange of package may be attached using screws. Torque conditions are shown in table 1. Table 1. Recommended and Maximum Torque for Screw Mounting Recommended Recommended Package Maximum Torque screw Torque VF M N-cm (0.9 lb-in) 15 N-cm (1.3 lb-in) (2) First, tighten the screws with a torque driver set to 5 N-cm. (3) The surface finish of the heat sink should be better than 0.8 µm, and the surface flatness must be better than 10 µm. (4) Silicon based heat sink compounds should not be used for the thermal conductive grease. They cause poor grounding of the source flange, contamination and long term degradation of thermal resistance between the FET package and heat sink. 2. Solder Mounting (1) Recommended solder are Tin-Lead solder (63Sn/37Pb), Lead-Free solder (Sn- 3.0Ag-0.5Cu)* 1 or equivalent. (2) For soldering, Tin-Lead solder (63Sn/37Pb) or Lead-Free solder (Sn-3.0Ag- 0.5Cu)* 1 shall be used. (*1: The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5% copper.) (3) Recommended Flux is Rosin type with chlorine content: 0.2% or less and a low halogen content. After soldering, the flux residue should be removed by appropriate cleaning methods. (4) The recommended soldering conditions are as follows: Partial heating method (soldering iron, spot laser/air) Product terminal temperature: 0 deg-c, max. 10 s./terminal or 0 deg-c, max. 3 s./terminal 14

15 Ku Band Power Amplifier MMIC Recommended Bias Circuit and Internal Block Diagram PIN ASSIGMENT 1 : VGG 2 : RF in 3 : VGG 4 : VDD 5 : RF out 6 : VDD Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module. Note 2: Two pins both VGG and VDD are internally connected respectively. 15

16 EUDYNA DEVICES USA INC Zanker Road San Jose, CA Phone: FAX: CAUTION Eudyna Devices Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. EUDYNA DEVICES EUROPE LTD. Norreys Drive Maidenhead Berkshire, SL6 4FJ United Kingdom Phone: FAX: Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. EUDYNA DEVICES ASIA PTE. LTD. HONG KONG BRANCH Rm. 1101, Ocean Centre, 5 Canton Road, Tsim Sha Tsui, Kowloon, Honk Kong Tel: Fax: EUDYNA DEVICES INC. JAPANESE SALES OFFICE(Head Office) 1, Kanai-cho, Sakae-ku, Yokohama, , Japan Tel: Fax: Eudyna Devices Incorporated reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Incorporated or others. 16