FMM5820X Ka-Band Power Amplifier MMIC
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1 FEATURES High Output Power; = 35.5 dbm (Typ.) High Linear Gain; GL = db(typ.) Frequency Band ; GHz Impedance Matched Zin/Zout = 5Ω FMM582X DESCRIPTION The FMM582X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications band in the 29.5 to.ghz frequency range. This product is well suited for Ka-band V-SAT applications. Eudyna s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Rating Unit Drain-Source Voltage VDD 1 V Gate-Source Voltage VGG -3 V Input Power Pin 21 dbm Storage Temperature Tstg to +125 RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Unit Drain-Source Voltage VDD 7 V Input Power Pin 18 dbm Operating Backside Temperature Top -4 to +85 This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 ) Item Symbol Test Conditions Limits Min. Typ. Max. Unit Frequency Range f VDD=7.V GHz Output Power at Pin=15dBm IDD(DC)=15mA typ dbm Output Power at 1dB G.C.P. P1dB Zs=Zl=5ohm dbm Linear Gain Gl 2 db Power Added Efficiency at Pin=15dBm Nadd % at Pin=15dBm Iddrf - ma Input Return Loss at Pin=dBm RLin db Output Return Loss at Pin=dBm RLout db Note : RF parameter sample size 1ps. Criteria (accept/reject)=(/1) G.C.P. : Gain Compression Point ESD Class Note : Based on EIAJ ED-471 C-111A(C=1pF, R=1.5kΩ) ~ 199V Edition 1.1 January
2 Output Power vs. IDD(DC)=15mA Output Power, vs. Input IDD(DC)=15mA Pin=16dBm P1dB Pin=12dBm Pin=8dBm Pin=4dBm f=29.5ghz 29.75GHz.GHz 2 18 Pin=dBm Frequency [GHz] Power Added Efficiency vs. IDD(DC)=15mA Power Added Effciency [%] Pin=16dBm P1dB Pin=12dBm Pin=8dBm Pin=4dBm Pin=dBm Frequency [GHz] f=29.5ghz 29.75GHz.GHz tone Total 2
3 Output Power, vs. Input Power by Drain IDD(DC)=15mA Output Power, vs. Input Power by Drain IDD(DC)=15mA VDD=5V 6V 7V 8V 2 18 VDD=5V 6V 7V 8V Output Power, vs. Input Power by Drain Voltage Output Power, Gain vs. Drain VDD=5V 6V 7V 8V f=29.5ghz 29.75GHz GHz P1dB [dbm] P1dB G1dB G1dB [db] Drain Voltage VDD [V] 3
4 Output Power, vs. Input Power VDD=7V Output Power, vs. Input Power VDD=7V IDD(DC)=1mA 15mA 17mA 19mA 42 IDD(DC)=1mA 15mA 17mA 19mA Output Power, vs. Input Power by Output Power, Gain IDD(DC)=1mA 15mA 17mA 19mA P1dB [dbm] f=29.5ghz 29.75GHz GHz P1dB G1dB G1dB [db] DC IDD(DC) [ma] 4
5 by Drain IDD(DC)=15mA by Drain IDD(DC)=15mA VDD=5V 6V 7V 8V VDD=5V 6V 7V 8V tone Total tone Total by Drain IDD(DC)=15mA VDD=5V 6V 7V 8V tone Total 5
6 VDD=7V VDD=7V IDD(DC)=1mA 15mA 17mA 19mA IDD(DC)=1mA 15mA 17mA 19mA tone Total tone Total VDD=7V IDD(DC)=1mA 15mA 17mA 19mA tone Total 6
7 IDD(DC)=15mA Sxx [db] S11 S21 S Frequency [GHz] Sxx [db] S11 S21 S Frequency [GHz] 7
8 S-Parameter VDD=7V, IDD=15mA Freq. S11 S21 S12 S21 GHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang
9 Tch vs. Drain Voltage (Reference) 8 IDD=15mA Monunted on Cu-Plate(t=.5mm) with AuSn soldering. 7 6 ΔTch [ ] VDD [V] MTTF vs. Tch 1.E+12 1.E+11 1.E+1 Ea=1.56eV MTTF (hrs) 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 1.E+4 1.E+3 1.E+2 1.E Tch ( ) 9
10 Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG1 VDD1 VDD3 VDD5 VDD (VGG2) VDD2 VDD4 VDD6 VDD8 Chip Size : 45±um x 2±um Chip Thickness : 6±2um Bonding Pad Size : 16um x 8um NOTE: Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2). 1
11 Assembly Diagrams Recommended assembly VGG 1 uf 1 pf 1 pf 1 pf 1 pf 1 uf VDD RF_in RF_Out VDD 1 pf 1 pf 1 pf 1 pf 1 uf Copper is the recommended material for the package or carrier. 11
12 DIE ATTACH 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature: to 31 Time : less than 15 seconds AuSn Preform Volume : per next Figure 25 Volume of Au-Sn Perform (1-3 /mm 3 ) FMM582X Area of Chip Bach Surface (mm^2) WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 74 (Manual Bonder) Bonding Tool : CCOD-1/16-S F1-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter :.7 to 1. mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force :.196 N ±.196 N Stage Temperature : 215 ± 5 Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 14 Duration : 15 ms/bond 12
13 For further information please contact : Eudyna Devices USA Inc Zanker Rd. San Jose, CA , U.S.A. TEL: FAX: Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 () FAX: +44 () Eudyna Devices International Srl Via Teglio 8/ Milano, Italy TEL: Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 196B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: FAX: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of Eudyna Devices Inc. or others. 26 Eudyna Devices Inc. Eudyna Devices Inc. 1 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 49-83, Japan (Kokubo Industrial Park) TEL FAX Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 4-845, Japan TEL FAX
Drain-Source Voltage VDD 10 Gate-Source Voltage VGG -3. RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Drain-Source Voltage VDD =< 6
Preliminary FEATURES Output Power; P1dB = 25 dbm (Typ.) High Gain; GL = 25 db(typ.) Wide Frequency Band ; 1. 15.4 GHz Impedance Matched Zin/Zout = 5Ω ES/EMM579X X/ Ku-Band Power Amplifier MMIC DESCRIPTION
More informationdbm Storage Temperature Tstg RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C)
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More informationRating Drain-Source Voltage VDD VGG. Pin
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More informationdbm Channel Temperature T ch +175 o C dbm Operating Case Temperature T C -40~+85 ELECTRICAL CHARACTERISTICS (Case Temperature T C =25 o C)
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Typical Applications This is ideal for: Wideband Communication Systems Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation * VSAT Functional Diagram
More informationFeatures. = +25 C, Vdd = 5V, Idd = 85mA*
Typical Applications The is ideal for use as a medium power amplifier for: Point-to-Point and Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 25% PAE Gain: 15 db
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FEATURES Gain:.5 db typical at 5 GHz to 7 GHz S11: db typical at 5 GHz to 7 GHz S: 19 db typical at 5 GHz to 7 GHz P1dB: 17 dbm typical at 5 GHz to 7 GHz PSAT: 1 dbm typical OIP3: 5 dbm typical at 7 GHz
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More informationPRELIMINARY DATA SHEET: CKRF3510MM34
Features: Low noise figure and high associated gain NF=0.42dB Typ., Ga=17.0dB Typ. @Vdd=3.0V, Idd=10mA, f=1.575ghz Description: Low Noise and High Gain On chip Bias supply circuit On chip ESD protection
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Data Sheet FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output
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More information71 GHz to 76 GHz, E-Band Variable Gain Amplifier HMC8120
Data Sheet FEATURES Gain: 22 db typical Wide gain control range: 1 db typical Output third-order intercept (OIP3): 3 dbm typical Output power for 1 db compression (P1dB): 21 dbm typical Saturated output
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Total Size: 172 x 76 Scribe Alley: 7 x 7 MMA-174321 Features: Frequency Range: 17 43 GHz P1dB: 21 dbm Psat: 22 dbm Gain: 22 db Vdd =5 V (3 V to 5 V) Ids = 2 ma (15mA to 3mA) Input and Output Fully Matched
More informationFeatures. = +25 C, Vdd= 2V [1], Idd = 55mA [2]
HMC-ALH12 Typical Applications This HMC-ALH12 is ideal for: Features Noise Figure: 2.5 db Wideband Communications Receivers Surveillance Systems Point-to-Point Radios Point-to-Multi-Point Radios Military
More informationFeatures: Applications: Description: Absolute Maximum Ratings: (Ta= 25 C)* 28-31GHz 2.5W MMIC Power Amplifier Preliminary Data Sheet
Features: Frequency Range: 28-31 GHz P3dB: +34 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 20 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω Integrated Output Power Detector
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v9.917 HMC441 Typical Applications Features The HMC441 is ideal for: Point-to-Point and Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Gain:.5 db Saturated
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