FLD5F6CX-H. 1,550nm MQW-DFB Continous Wave Laser

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1 1,550nm MQWDFB FLD5F6CXH FEATURES Continuous Wave (CW) MQW DFB Laser Builtin TEC, Thermistor and Monitor PD 14Pin Butterfly Type Module 10mW Output Power Selected wavelengths according to ITUT grid available Polarization preserving (PANDA) fiber APPLICATIONS This MQW laser is intended for use in 2.5 and 10 Gb/s long haul DWDM transmission systems. DESCRIPTION The Multiple Quantum Well (MQW) Laser has high power CW operation. It is packaged in a butterfly type module. This module has high optical coupling efficiency through an optical isolator. This module also includes a monitor photodiode, a thermoelectric cooler (TEC) and thermistor. This laser is designed for use with external modulation components (such as LiNb0 3 modulators). NOTE This device is not available with an axis aligned connector. The Fujitsu connector is attached only for the convenience of measuring the extinction ratio at incoming inspection of the customer. A fusion splice is the recommended method for connecting this laser to an external modulator. ABSOLUTE MAXIMUM RATINGS (Tc=25 C) Parameter Symbol Condition Ratings Unit Storage Temperature Tstg 40 to +70 C Operating Case Temperature Top 20 to +70 C Optical Output Power Pf CW 15 Laser Reverse oltage R 2 Laser Forward Current Photodiode Reverse oltage Cooler oltage IF DR Photodiode Forward Current IPF 10 ma Cooler Current Ic 1.4 A c CW Note (1) Lead Soldering Time Tsold <260 C 10 sec Note 1: Heatsink thickness shall be 10mm min. (refer to note on thermal precaution) mw ma 1

2 FLD5F6CXH 1,550nm MQWDFB OPTICAL AND ELECTRICAL CHARACTERISTICS AT (TL=Tset, Tc=25 C, BOL, unless otherwise specified) Parameter Relative Intensity Noise Symbol RIN Conditions, f=0.5ghz Cooler Current Ic TL=Tset, Tc=+70 C, A Cooler oltage c TL =Tset, Tc=+70 C, 2.4 Thermistor Resistance Rth TL=+20 to +35 C kω Thermistor B Constant (Note 2) B TL=+20 to +35 C 3,270 3,450 3,630 K Min. +20 Limits Typ. Max. +35 Laser Set Temperature Tset Optical Output Power Pf CW, Tc=20 to +70 C 10 mw Threshold Current Ith CW 3 40 ma Forward oltage F CW, IF=30 ma, pin 3, Slope Efficiency η Peak Wavelength λp Note (4) nm Wavelength Stability with Case Temperature Spectral Width (3dB) λ 8 50 MHz Side Mode Suppression Sr db Monitor Current Monitor Dark Current Monitor Capacitance Tracking Error (Note 2) Im Idm Ct TE PD=5 PD=5, f=1 MHz Im=constant, Pf(Tc=25 C)=10mW, Tc=20 to +70 C / Unit C mw/ma Wavelength Drift after 20 years 0.2 nm +/2 pm/ C Optical Isolation S22 Tc=20 to +70 C 25 db Extinction Ratio TE/TM CW, 20 db Note 2. TE=10*log[Pf(Tc)/Pf(25)] Note 3. Relation between resistance and temperature ( K) is: Rth (T) = Rth (25)*exp[B(1/T1/298)] Note 4. The selected wavelength is available which is listed in Figure ma na pf db db/hz 2

3 1,550nm MQWDFB FLD5F6CXH Fig. 1 Forward oltage vs Output Power 12 Fig. 2 Temperature Dependance of Wavelength 1554 Output Power, Pf (mw) Forward Current, If (ma) Wavelength (nm) Laser Temperature, TL ( C) Fig. 3 Cooler oltage Current Fig.4 Spectrum Cooler oltage () c Cooler Temperature ( C) Ic Cooler Current (A) Relative Intensity (db) Wavelength λ (nm) 3

4 4 Fig. 5 Wavelength Table Part Number FLD5F6CXH62 H61 H60 H59 H58 H57 H56 H55 H54 H53 H52 H51 H50 H49 H48 H Wavelength (nm) (TL=Tset) (in vacuum) Tolerance (nm) H46 H45 H44 H43 H42 H41 H40 H39 H38 H37 H36 H35 H34 H33 H32 H31 H30 H29 H28 H27 H26 H25 H24 H23 H22 H21 H20 H19 H ,550nm MQWDFB FLD5F6CXH

5 1,550nm MQWDFB CX PACKAGE FLD5F6CXH UNIT: mm PIN 7 PIN 1 All dimensions are in millimeters. TEC TOP IEW TH 10 KΩ φ0.9 φ (Preliminary) PIN * Pigtail length (L) shall be specified in the detail (individual) specification, if it is special. L=1500 min. for standard 4φ2.67 PIN *L P o PIN # FUNCTION 1. Temperature Monitor 2. Temperature Monitor 3. Laser DC Bias () 4. Monitor (Anode) 5. Monitor (Cathode) 6. TEHP (+) 7. TEHP () 8. Case Ground 9. Case Ground 10. N.C. 11. Laser Ground 12. Laser Modulation () 13. Case Ground 14. N.C. For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W Zanker Rd. San Jose, CA , U.S.A. Phone: (408) FAX: (408) Schanck Road, Suite A2 Freehold, NJ , U.S.A. Phone: (732) FAX: (732) FUJITSU MIIKROELCTRONIK GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0) FAX:+44 (0) CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put this product into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEICES, LTD. Asia & Japan 271, Nishi Shinjuku Shinjukuku, Tokyo Japan Phone: FAX: Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 5