Gate-Source Voltage V GG -3 dbm Storage Temperature T stg -55 to +125

Transcription

1 FEATURES High Output Power: =.0dBm (typ.) High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7~.4GHz Impedance Matched Zin/Zout=50Ω EMM5075X DESCRIPTION The EMM5075X is a MMIC amplifier that contains a three-stages amplifier, internally matched, for standard communications band in the 12.7 to.4ghz frequency range. Sumitomo Electric Device Innovations s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Rating Unit Drain-Source Voltage V DD 10 V Gate-Source Voltage V GG -3 V Input Power P in 26 dbm Storage Temperature T stg to +1 RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Unit Drain-Source Voltage V DD 7 V Input Power P in 16 dbm Operating Case Temperature T C to +85 This Product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Case Temperature Ta= ) Item Symbol Test Conditions Limits Min. Typ. Max. Unit RF Frequency Range f V DD = GHz Output Power at 1dB G.C.P. P 1dB I DD(DC) =ma typ dbm Power Gain at 1dB G.C.P. G 1dB Z S =Z L =50ohm db Power-added Efficiency at 1dB G.C.P. N add % Drain Current at 1dB G.C.P. I DDRF ma 3rd. Order Intermodulation Distortion * IM 3 * df=+10mhz dbc Input Return Loss (at Pin=dBm) RL IN Po=20dBm S.C.L db Output Return Loss (at Pin=dBm) RL OUT db Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1) G.C.P. : Gain Compression Point SCL : Single Carrier Level ESD Note : Based on JEDEC JESD22-A4C RoHs Compliance Class 0 Yes ~ 249V 1

2 OUTPUT POWER vs. IDD(DC)=mA vs. INPUT IDD(DC)=mA Frequency [GHz] Pin=-10dBm -6dBm -2dBm 2dBm 6dBm 10dBm P1dB GHz.5GHz 14.5GHz.4GHz POWER-ADDED EFFICIENCY vs IDD(DC)=mA 40 Power Added Efficiency [%] Frequency [GHz] Pin=-10dBm -6dBm -2dBm 2dBm 6dBm 10dBm P1dB 2

3 IMD vs. IDD(DC)=mA, =20dBm S.C.L. IMD vs OUTPUT IDD(DC)=mA 3rd Order Frequency [GHz] Tone Total 12.7GHz.5GHz 14.5GHz.4GHz 3

4 vs. INPUT POWER by Drain f=12.7ghz vs. INPUT POWER by Drain f=.5ghz 1 1 vs. INPUT POWER by Drain f=14.5ghz vs. INPUT POWER by Drain f=.4ghz 1 1 4

5 vs. INPUT POWER by Drain Current IDD(DC)=m A ma f=12.7ghz 1 vs. INPUT POWER by Drain Current IDD(DC)=m A ma f=.5ghz 1 vs. INPUT POWER by Drain Current IDD(DC)=mA ma f=14.5ghz 1 vs. INPUT POWER by Drain Current IDD(DC)=mA ma f=.4ghz 1 5

6 by Drain f=12.7ghz by Drain f=.5ghz Tone Total Tone Total by Drain f=14.5ghz by Drain f=.4ghz Tone Total Tone Total 6

7 by Drain f=12.7ghz by Drain f=.5ghz - - IDD(DC)=m A m A m A Tone Total - - IDD(DC)=mA ma ma Tone Total by Drain Current by Drain f=.4ghz - - IDD(DC)=mA ma ma Tone Total - - IDD(DC)=mA ma ma Tone Total 7

8 S-PARAMETER VDD=, IDD=mA Frequency S S S12 S22 [GHz] Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang

9 S-PARAMETER IDD=mA Sxx [db] 30 S S 20 S Frequency [GHz] Sxx IDD=mA S 10 S 5 S Frequency [GHz] 9

10 ΔTch vs. Drain Voltage (Reference) IDD(DC)=mA Tch [ ] VDD [V] Note ΔTch : Temperature Rise from Backside of MMIC to Channel MTTF vs. Tch 1E+12 1E+ 1E+10 1E+09 1E+08 MTTF [Hrs.] 1E+07 1E+06 1E+05 1E+04 1E+03 1E+02 1E Tch [deg-c] 10

11 Assembly Diagrams Recommended assembly VGG 100pF 100pF 100pF 1 uf VDD 50ohm Line 50ohm Line 100pF 100pF 100pF 1 uf VDD Copper is the recommended material for the package or carrier.

12 Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG VDD2 VDD RF-IN 10 RF-Out VDD1 VDD3 VDD5 Chip Size : 85±30um x 2620±30um Chip Thickness : 60±20um Bonding Pad Size : 160um x 80um 12

13 DIE ATTACH 1) The die-attach station must have accurate temperature control and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 0 deg.c Time : less than seconds Die attach material : AuSn AuSn Preform Volume : per next Figure 00 Volume Volume of of Au-Sn Au-Sn Perform Perform ( mm^3) /mm 3 ) 00 EMM5075X Area of Chip Back Bach Surface (mm^2) WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. However, when bonding wire on the MMIC, the condition should be verified by customer using their equipment and materials. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : SINKAWA UTC0 (automatic ball bonder) Bonding Tool : ADAMANT AD-2-38LB20 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.4 N to N Stage Temperature : 0 deg.c +/- 5 deg.c Ultrasonic Power : 30 to 90 Ultrasonic Power Time : 10ms to 60ms

14 For further information please contact : Sumitomo Electric Device Innovations, U.S.A., Inc. Zanker Rd. San Jose, CA , U.S.A. TEL: FAX: Sumitomo Electric Europe Ltd. 220 Centennial Park, Elestree WD6 3SL United Kingdom TEL: +44 (0) FAX: +44 (0) Sumitomo Electric Europe Ltd. (Italy Branch) Piazza Don E. Mapelli, 99 Sesto San Giovanni, Milano- Italy TEL: FAX: Sumitomo Electric Asia, Ltd. Room , 26F Sun Hung Kai Centre, 30 Harbour Road Wanchai, Hong Kong TEL: FAX: CAUTION Sumitomo Electric Device Innovations, Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Sumitomo Electric Device Innovations, Inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of Sumitomo Electric Device Innovations, Inc. or others Sumitomo Electric Device Innovations, Inc. Sumitomo Electric Device Innovations, Inc. Kamisukiahara, showa-cho Nakakomagun, Yamanashi , Japan (Kokubo Industrial Park) TEL FAX Sumitomo Electric Industries, Ltd. Head Office (Tokyo) 3-9-1, Shibaura, Minato-ku, Tokyo , Japan TEL FAX