dbm Storage Temperature Tstg RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C)

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1 FEATURES Low Noise Figure :NF = 5 db f = 6 GHz High Associated Gain: S 21 = 22 f = 6 GHz Wide Frequency Band : GHz Impedance Matched Zin/Zout = 5Ω DESCRIPTION The is a low noise amplifier MMIC designed for applications in the GHz frequency range. This product is well suited for wireless LAN and point-to-point radio. Eudyna s stringent Quality Assurance Program assures the highest reliability and consistent performance. Device photo ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 o C) Item Symbol Rating Unit DC Input Voltage VDD +4 V DC Input Voltage VGG -3 V Input Power Pin 3 dbm Storage Temperature Tstg -55 to +125 o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C) Item Symbol Condition Unit DC Input Voltage VDD 3 V Backside Temperature T B -45 to +85 o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Item Symbol Condition Limit Min. Typ. Max. Unit Noise Figure NF V DD = 3V db Linear Gain S 21 I DD = 3 ma db Output Power at 1dB G.C.P. P1dB f = 57~64 GHz dbm Gate Voltage V GG ma Input Return Loss S db Output Return Loss S db These values are representative for CW on chip measurements that are made without bonding wires at the RF ports. ESD Class Note : Based on EIAJ ED-471 C-111A(C=1pF, R=1.5kΩ) ~ 199V Edition 1.1 Dec. 25 1

2 Noise Figure vs. Frequency Bias Conditions: V DD = 3V Linear Gain vs. Frequency Bias Conditions: V DD = 3V Noise Fig ure (db) I DD = 2 ma I DD = 3 ma 4.5 I DD = 4 ma S 21 (db) I DD = 3 ma I DD = 4 ma I DD = 2 ma Input Return Loss vs. Frequency Bias Conditions: V DD = 3V Output Return Loss vs. Frequency Bias Conditions: V DD = 3V -5 I DD = 4 ma -5 I DD = 3 ma S 11 (db) S 22 (db) I DD = 4 ma -2 I DD = 3 ma I DD = 2 ma I DD = 2 ma Typical on chip measurements 2

3 Output Power vs. Frequency Bias Conditions: V DD = 3V, I DD = 3 ma 12 Pout (dbm) Pin = -8 dbm P1dB Pin = -1 dbm Pin = -12 dbm Pin = -14 dbm Pin = -16 dbm Pin = -18 dbm Freq (GHz) Typical on chip measurements 3

4 S-PARAMETERS Bias Conditions: V DD = 3V, I DD = 3 ma S 21 (db) S 11, S 22 (db ) S11-5 S Typical on chip measurements 4

5 S-PARAMETERS Bias Conditions: V DD = 3V, I DD = 3 ma Freq. S11 S21 S12 S22 Freq. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG GHz MAG ANG MAG ANG MAG ANG MAG ANG Typical on chip measurements 5

6 CHIP OUTLINE V DD1 V DD2 V DD3 RFin RFout V GG1 V GG2 V GG3 Bonding Pad Locations (Dimension in Micron Meters) Pad Dimensions DC Pads; 8 x 8 µm RF Pads; 8 x 6 µm Unit; µm Chip size; 154 x 71 µm Chip Thickness; 7 µm 6

7 Assembly Diagram To DC Power Supply (V DD) Single Layer Capacitor 1 pf RF In *1 *1 RF Out Z = 5Ω Z = 5Ω *2 Single Layer Capacitor 1 pf *1; RF Wire Length = 15 µm *2; DC Wire Length 1 µm To DC Power Supply (V GG) MTTF vs. Backside Temperature 1.E+12 1.E+11 1.E+1 Ea=1.2eV MTTF (hrs) 1.E+9 1.E+8 1.E+7 1.E+6 1.E BacksideTemperature (degc) 7

8 DIE ATTACH 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2)Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 3 to 31 deg.c Time : less than 15 seconds AuSn Perform Volume : per next Figure 5 Volume of Au-Sn Perform (1-3 /mm 3 ) Area of Chip Back Surface (mm^2) WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 74 (Manual Bonder) Bonding Tool : CCOD-1/16-S F-21-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter :.7 to 1. mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force :.196 N +/-.196 N Stage Temperature : 215 deg.c +/- 5 deg.c Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 14 Duration : 15 ms/bond 8

9 Eudyna Devices USA Inc Zanker Rd. San Jose, CA , U.S.A. TEL: (48) FAX: (48) Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 () FAX: +44 () Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 196B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: FAX: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of Eudyna Devices Inc. or others. 25 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, , Japan TEL FAX