FLD5F10NP. 1,550nm MQW-DFB Modulator Integrated Laser

Transcription

1 1,55nm MQW-DFB FLD5F1NP FEATURES Long transmission span over 8ps/nm for 1Gb/s system Modulator Integrated DFB Laser Diode Module CW laser operation Modulation voltage applied only on modulator section 1,55nm peak wavelength region and very low wavelength chirping High speed butterfly package with SMP connection Built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler Simplifies driver design λ/4 shifted MQW-DFB chip APPLICATION This MI laser is intended for the application of 1Gb/s long haul transmission over 8ps/nmwith Erbium Doped Fiber Amplifiers (EDFA). DESCRIPTION The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator monolithically integrated with a conventional Distributed Feed-Back (DFB) λ/4 shifted Multi Quantum Well (MQW) laser. The modulation voltage is applied to the modulator section while the laser section operates CW allowing extremely low wavelength chirping. Transmission spans in excess of 8ps/nm are achievable. An extinction ratios of more than 1 db is achieved with 2.6Vp-p modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly stable YAG welded optical coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a thermo-electric cooler. February 2 1

2 FLD5F1NP 1,55nm MQW-DFB OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25 C, BOL, unless otherwise specified) Limits Parameter Symbol Test Condition Unit Min. Type Max. On Level Modulation Vo V Modulator Drive Voltage Vmod (Vo-Vmod)>=-3.3V, Rext=1dB V Threshold Current Ith CW, Vm=Vo ma Operating Current Iop CW, Vm=Vo 5-1 ma Dispersion Penalty dp Note (1) db Optical Output Power Pf Note (1) dbm Forward Voltage VF CW, IF=Iop, Vm=Vo V f=1gb/s, IF=Iop, Extinction Ratio Rext Vm=Vo/(Vo-Vmod) db Peak Wavelength λp Note (2) nm Sidemode Suppression Ratio SSR Note (2) db Spectral Width λ Note (3) nm Rise Time Tr Note (2), 2 to 8% ps Fall Time Tf Note (2), 2 to 8% ps Input Impedance Z CW, Vm< Ω RF Return Loss S11 f=cd-5ghz, 5Ω Test Set, Vm=Vo, IF=Iop db RF Return Loss S11 f=5-1ghz, 5Ω Test Set, Vm=Vo, IF=Iop db Cut-off Frequency S21-3dB bandwidth, Vm=Vo-.5 (Vmod), IF=Iop GHz Relative Intensity Noise RIN f=1 GHz, Vm=Vo, IF=Iop, ORL=>24dB db/hz Optical Isolation Is Tc=-2 to +65 C db Note (1) FUJITSU Test System Gb/s, PRBS, , IF=Iop, Vm=Vo and (Vo-Vmod) Dispersion=8ps/nm, Dispersion penalty at Bit Error Rate = 1.E-1 Note (2) FUJITSU Test System Gb/s, PRBS, , IF=Iop, Vm=Vo and (Vo-Vmod) 2 February 2

3 1,55nm MQW-DFB FLD5F1NP Fig. 1 Lasing Spectrum Fig. 2 Lasing Spectrum Relative Intensity (5 db/div.) 5.5 GHz (.45nm) 1 Gb/s PRBS IF=Iop Vm=Vo/(Vo-2) Relative Intensity (1 db/div.) 1 Gb/s PRBS IF=Iop Vm=Vo/(Vo-2) Wavelength (Span=1 GHz/div, Res.=1 MHz) Wavelength (Span=1 nm/div, Res.=.1nm) Fig. 3 Temperature Dependance of Wavelength IF = Iop Vm= Vo Fig. 4 Forward Current vs. Output Power and Forward Current vs. Forward Voltage 4 VF Vo = -.7V TL = +25 C.4 Wavelength (nm) Output Power, Pf (mw) Pf Monitor Current (ma) Laser Temperature, TL ( C) Forward Current, IF (ma) February 2 3

4 FLD5F1NP 1,55nm MQW-DFB Fig. 5 Extinction Ratio vs. Modulation Voltage Fig. 6 Cut-off Frequency (S21) 12 Minus Extinction Ratio (db) Relative Output (db) Frequency (GHz) Modulation Voltage (V) Fig. 7 RF Return Loss (S11) Fig. 8 Transmission Characteristics Return Loss (db) Bit Error Rate Gb/s PRBS km 8ps/nm Frequency (GHz) Average Received Optical Power (dbm) 4 February 2

5 1,55nm MQW-DFB Notes FLD5F1NP February 2 5

6 FLD5F1NP 1,55nm MQW-DFB NP PACKAGE UNIT: mm PIN PIN TOP VIEW ø ø TEC TH 1KΩ Ω 2.54 ø ø # PIN DESIGNATIONS *L 1 TEMPERATURE MONITOR 2 TEMPERATURE MONITOR 3 LASER DC BIAS (+) 4 MONITOR (ANODE) 5 MONITOR (CATHODE) 6 TEHP (+) 7 TEHP (-) 8 MODULATION (-) 13 Po * Note Pigtail length (L) shall be specified in the detail (individual) specification, if it is special. L=9 min. for standard For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W Zanker Rd. San Jose, CA , U.S.A. Phone: (48) FAX: (48) FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 () FAX: +44 () FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 111, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: FAX: CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put this product into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, Nishishinjuku, Shinjuku-ku, Tokyo, , Japan TEL: FAX: Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. 2 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI2M2 6 February 2