Rating Drain-Source Voltage VDD VGG. Pin

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FEATURES High Output Power; P1dB = 31 dbm (Typ.) High Linear Gain; GL = 25 db(typ.) Frequency Band ; 21.0-27.

1 FEATURES High Output Power; P1dB = 31 dbm (Typ.) High Linear Gain; GL = 25 db(typ.) Frequency Band ; GHz High Linearity ; OIP3 = 39dBm Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5840X is a power amplifier MMIC that contains a four stage amplifier, internally matched, for standard communications band in 21.0 to 27.0GHz frequency range. This product is well suited for point-to-point radio applications. EMM5840X Device photo SEDI s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Rating Drain-Source Voltage VDD 10 Gate-Source Voltage VGG -3 Input Power Pin Storage Temperature Tstg to +125 Note : Semiconductor devices can be permanently damaged by appreciation of stress (Voltage, Current, Temperature, etc.) not exceed these ratings. Unit V V dbm o C RECOMMENDED OPERATING CONDITIONS Item Symbol Rating Drain-Source Voltage VDD 7 Input Power Pin 12 Operating Case Temperature Tc to +85 Unit V dbm o C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 o C) Item Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency at 1dB G.C.P. Third Order Intermodulation Distortion at 1dB G.C.P. Input Return Loss Output Return Loss Symbol f P1dB G1dB ηadd * IDDRF RLin RLout Test Conditions Limits min. Typ. Max. Unit GHz VDD= dbm IDD(DC)=mA typ db % * : delta f =+10MHz dbc 2-tone Test ma =dbm S.C.L db db Note : a) The electrical characteristics are guaranteed by the wafer acceptance test, the number of the sample size is 10 pcs. / Wafer. Criteria (accept / reject) = (0, 1) b) 1dB G.C.P. : 1dB Gain Compression Point c) S.C.L. : Single Carrier Level ESD Class 0 250V Note : Based on JEDEC JESD-A114C (C=100pF, R=1.5kohm) RoHS Compliance YES May 10 1

2 Output Power vs. VDD=, IDD(DC)=mA Output Power, vs. Input VDD=, IDD(DC)=mA - - Pin=12dBm Pin=8dBm Pin=4dBm Pin=0dBm GHz 23.6GHz.5GHz 27.0GHz Frequency (GHz) Power Added Efficiency vs. VDD=, IDD(DC)=mA Power Added Efficiency (%) Pin=12dBm Pin=8dBm Pin=4dBm Pin=0dBm Frequency (GHz) May 10 2

3 IMD vs. VDD=, IDD(DC)=mA, =dbm VDD=, IDD(DC)=mA GHz 23.6GHz.5GHz 27.0GHz Frequency (GHz) 16 2-tone Total Output Power, Gain vs. Drain IDD(DC)=mA Output Power, Gain VDD= P1dB (dbm) GHz 23.6GHz.5GHz 27.0GHz P1dB G1dB (db) P1dB (dbm) GHz 23.6GHz.5GHz 27.0GHz P1dB G1dB (db) G1dB G1dB Drain Voltage (V) Drain Voltage (V) May 10 3

4 Output Power, vs. Input Power by Drain Voltage Output Power, vs. Input Power by Drain freq.=21.0ghz, freq.=23.6ghz, IDD(DC)=mA Output Power, vs. Input Power by Drain Voltage Output Power, vs. Input Power by Drain freq.=.5ghz, freq.=27.0ghz, IDD(DC)=mA May 10 4

5 Output Power, vs. Input Power by Output Power, vs. Input Power freq.=21.0ghz, freq.=23.6ghz, VDD= ma ma ma ma ma ma Output Power, vs. Input Power by Output Power, vs. Input Power freq.=.5ghz, freq.=27.0ghz, VDD(DC)= ma ma ma ma ma ma May 10 5

6 by Drain Voltage by Drain freq.=21.0ghz, freq.=23.6ghz, IDD(DC)=mA tone Total 2-tone Total by Drain Voltage by Drain freq.=.5ghz, freq.=27.0ghz, IDD(DC)=mA tone Total 2-tone Total May 10 6

7 by freq.=21.0ghz, freq.=23.6ghz, VDD= - - ma ma ma - - ma ma ma tone Total 2-tone Total by freq.=.5ghz, freq.=27.0ghz, VDD= - - ma ma ma - - ma ma ma tone Total 2-tone Total May 10 7

8 S-PARAMETER Sxx (db) S11 S21 S VDD=, IDD=mA Frequency (GHz) Sxx (db) S11 S21 S Frequency (GHz) May 10 8

9 S-PARAMETER VDD=, IDD=mA EMM5840X FREQ. S11 S21 S12 S [MHz] mag. ang. mag. ang. mag. ang. mag. ang May 10 9

10 ΔTch vs. Drain Voltage (Reference) EMM5840X 50 IDD(DC)=mA 40 Tch ( o C/W) VDD (V) Note: Tch : Temperature Rise from Backside of the Package to Channel. MTTF (hrs.) MTTF vs. Tch 1.0E E E+10 Ea=1.56e V 1.0E E E E E E E E E Tch (deg-c) May 10 10

11 Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) 0 1 VDD1 450 VDD2 (VGG3) 1170 VDD3 40 (VGG5) 2990 VDD RF-IN 1405 RF-OUT VGG (VGG2)(VGG4) 40 VDD (VGG6) VDD Chip Size : 4025 x 35 µm (+/- µm) Chip Thickness : 60µm (+/- µm) Bonding Pad Size : RF-Pad : 90 x 170µm VGG1~6 : 80um x 80um VDD1~4 : 100um x 100um VDD5~6 : 170um x 100um Note : Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2~6). May 10 11

12 Assembly Diagrams Recommended assembly 1µF 100pF 100pF 100pF 100pF VDD 50Ω Line 50Ω Line VGG 100pF 100pF 100pF VDD 1µF 1µF Copper is the recommended material for the package or carrier. May 10 12

13 DIE ATTACH 1) The die-attach station must have accurate temperature control and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 0 to 310 deg.c Time : less than 15 seconds Die attach material : AuSn AuSn Preform Volume : per next Figure 2500 Volume of Au-Sn Perform (10-3 /mm 3 ) EMM5840X Area of Chip Bach Surface (mm^2) WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. However, when bonding wire on the MMIC, the condition should be verified by customer using their equipment and materials. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : SINKAWA UTC-0 (automatic ball bonder) Bonding Tool : ADAMANT AD-2-38LB 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : N to N Stage Temperature : 2 deg.c +/- 5 deg.c Ultrasonic Power : to 90 Ultrasonic Power Time : 10ms to 60ms May 10 13

14 For further information please contact : Sumitomo Electric Device Innovations, U.S.A., Inc Zanker Rd. San Jose, CA , U.S.A. TEL: FAX: Sumitomo Electric Europe Ltd. 2 Centennial Park, Elstree WD6 3SL United Kingdom TEL: +44 (0) FAX: +44 (0) Sumitomo Electric Europe Ltd. (Italy Branch) Piazza Don E. Mapelli, Sesto San Giovanni, Milano - Italy TEL: FAX: Sumitomo Electric Asia, Ltd. Room -37, /F., Sun Hung Kai Centre, Harbour Road, Wanchai, Hong Kong TEL: FAX: CAUTION Sumitomo Electric Device Innovations, Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Sumitomo Electric Device Innovations, Inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of Sumitomo Electric Device Innovations, Inc. or others. 10 Sumitomo Electric Device Innovations, Inc. Sumitomo Electric Device Innovations, Inc. Kamisukiahara, showa-cho Nakakomagun, Yamanashi , Japan (Kokubo Industrial Park) TEL FAX Sumitomo Electric Industries, Ltd. Head Office (Tokyo) 3-9-1, Shibaura, Minato-ku, Tokyo , Japan TEL FAX

Gate-Source Voltage V GG -3 dbm Storage Temperature T stg -55 to +125

Gate-Source Voltage V GG -3 dbm Storage Temperature T stg -55 to +125 FEATURES High Output Power: =.0dBm (typ.) High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7~.4GHz Impedance Matched Zin/Zout=50Ω EMM5075X DESCRIPTION The EMM5075X is a MMIC amplifier that contains a