Item Symbol Condition. dbm Storage Temperature T stg -55 to dbm Operating Case Temperature T C -40 to +85

Transcription

1 FEATURES High Output Power: Pout=33dBm (typ.) High Linear Gain: GL=27dB (typ.) Broad Band: GHz Impedance Matched Zin/Zout=50Ω Small Hermetic Metal-Ceramic SMT Package(VU) EMM5074VU C-Band Power Amplifier MMIC DESCRIPTION The EMM5074VU is a wide band power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications band in 5.8 to 8.5GHz frequency range. Eudyna s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Rating Unit Drain-Source Voltage V DD 10 V Gate-Source Voltage V GG -3 V Input Power P in + dbm Storage Temperature T stg -55 to +125 o C RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Unit Drain-Source Voltage V DD <=6 V Input Power P in <=10 dbm Operating Case Temperature T C to +85 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Item Symbol Test Conditions Limits Unit Min. Typ. Max. Frequency Range f V DD =6V GHz Output Power at 1dB G.C.P. P 1dB I DD (DC)=10mA typ. *1 *1 - dbm Zs=Zl=50ohm 31 *2 33 *2 - Power Gain at 1dB G.C.P. G 1dB *1:f=5.8~7.1GHz 23 - db Power-added Efficiency at 1dB G.C.P. ηadd *2:f=7.1~8.5GHz - *1 - % - *2 - Third Order Intermodulation* IM 3 : f=10mhz, dbc Drain Current at 1dB G.C.P. IDD 2-Tone Test, *1 00 *1 ma Pout=dBm S.C.L *2 00 *2 Input Return Loss (at Pin=-dBm) RL in db Output Return Loss (at Pin=-dBm) RL out db G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level ESD Note : Based on JEDEC JESD-A114C CASE STYLE RoHs Compliance Class 0 VU Yes ~ 9V Edition 1.2 April,

2 C-band Power Amplifier MMIC Output Power vs. Frequency Output Power, Drain Current vs. Input IDD(DC)=10mA Frequency [GHz] Pin=-4dBm 0dBm +4dBm +10dBm IDD(DC)=10mA GHz 7.1GHz 8.5GHz Power Added Efficiency vs. IDD(DC)=10mA 35 Power Added Efficiency [%] Frequency [GHz] Pin=-4dBm 0dBm +4dBm +10dBm P1dB 2

3 C-Band Power Amplifier MMIC IM3 vs. Frequency IMD vs. Output IDD(DC)=10mA IM3 [dbc] IMD [dbc] Solid Line : IM3 Dash Line : IM Frequency [GHz] Tone Total Pout [dbm] 5.8GHz 7.1GHz 8.5GHz P1dB, G1dB vs. Frequency by Drain Voltage P1dB, G1dB vs. Frequency by P1dB [dbm] Solid Line : P1dB Dash Line : G1dB G1dB [db] P1dB [dbm] Solid Line : P1dB Dash Line : G1dB G1dB [db] Frequency [GHz] VDD=4V 5V 6V Frequency [GHz] IDD(DC)=800mA 10mA 1600mA 3

4 C-band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Drain Current vs. Input Power by Drain IDD(DC)=10mA VDD=4V 5V 6V VDD=4V 5V 6V Output Power, Drain Current vs. Input Power by Drain IDD(DC)=10mA VDD=4V 5V 6V 4

5 C-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Current Output Power, Drain Current vs. Input Power by Drain VDD=6V IDD(DC)=800mA 10mA 1600mA 800 A 10 A 1600 A IDD(DC)=800mA 10mA 1600mA 800 A 10 A 1600 A Output Power, Drain Current vs. Input Power by Drain VDD=6V IDD(DC)=800mA 10mA 1600mA 800 A 10 A 1600 A 5

6 C-band Power Amplifier MMIC IMD vs. Output Power by Drain Voltage IMD vs. Output Power by Drain IDD(DC)=10mA Solid Line : IM3 Dash Line : IM Solid Line : IM3 Dash Line : IM IMD [dbc] -45 IMD [dbc] Tone Total Pout [dbm] 2-Tone Total Pout [dbm] VDD=4V 5V 6V VDD=4V 5V 6V IMD vs. Output Power by Drain IDD(DC)=10mA Solid Line : IM3 Dash Line : IM IMD [dbc] Tone Total Pout [dbm] VDD=4V 5V 6V 6

7 C-Band Power Amplifier MMIC IMD vs. Output Power by Drain Current IMD vs. Output Power by Drain VDD=6V Solid Line : IM3 Dash Line : IM Solid Line : IM3 Dash Line : IM IMD [dbc] -45 IMD [dbc] Tone Total Pout [dbm] Tone Total Pout [dbm] IDD(DC)=800mA 10mA 1600mA IDD(DC)=800mA 10mA 1600mA IMD vs. Output Power by Drain VDD=6V Solid Line : IM3 Dash Line : IM IMD [dbc] Tone Total Pout [dbm] IDD(DC)=800mA 10mA 1600mA 7

8 C-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by IDD(DC)=10mA(Tc=25 C), Freq=5.8GHz OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by IDD(DC)=10mA(Tc=25 C), Freq=7.1GHz C +25 C +85 C C +25 C +85 C OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Temperature OUTPUT POWER, GAIN vs. IDD(DC)=10mA(Tc=25 C), Freq=8.5GHz C +25 C +85 C Psat IDD(DC)=10m A(Tc=25 C) Solid Line : Psat Dash Line : Gain Temperature [ C] 5.8GHz 7.1GHz 8.5GHz Gain 8

9 C-Band Power Amplifier MMIC S-Parameter VDD=6V, IDD(DC)=10mA Input/Output Return Loss [ db ] Input/Output Return Loss vs. Frequency - Input Return Loss - Output Return Loss Frequency [GHz] Small Signal Gain vs. Frequency Small Signal Gain [db] Frequency [GHz] 9

10 C-band Power Amplifier MMIC S-Parameter VDD=6V, IDD(DC)=10mA Frequency S11 S21 S12 S [GHz] MAG ANG MAG ANG MAG ANG MAG ANG

11 C-Band Power Amplifier MMIC Tch vs. DRAIN VOLTAGE (Reference Data) IDD(DC)=10mA Tch[ o C] VDD[V] Note : Tch : Temperature Rise from Backside of Package to Channel MTTF (hrs.) MTTF vs. Tch 1.0E E E+10 Ea=1.56eV 1.0E E E E E E E E E Tch (deg-c) 11

12 GNRFiGND456EMM5074VU C-band Power Amplifier MMIC Block diagram PIN ASSIGNMENT 1 : VGG 2 : RF in 3 : VGG 4 : VDD 5 : RF out 6 : VDD 1uF Recommended Bias Circuit0pF n1000pf DNote 1: The capacitors are recommended on the bias supply line, close to the package, RFout1uF VGG VDD VGG VDD 1uF 1000pF 1000pF 1uF in order to prevent video oscillations which could damage the module. Note 2: Two pins named VGG are internally connected. Note 3: Two pins named VDD are internally connected. 12

13 C-Band Power Amplifier MMIC Package Outline 13

14 C-band Power Amplifier MMIC PCB Pads and Solder-resist Pattern Notes : 1.LAMINATE : Rogers Corporation RO4003, Thickness t=0.2mm, Cu Foil μm Finish to copper foil ; Ni 0.1μm min./au 0.1±0.08μm (Both side) 2. : Resist 14

15 C-Band Power Amplifier MMIC Mounting Instructions for VU Package for Lead-free solder Mounting Condition 1. For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu) *1 or equivalent shall be used. (*1:The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5% copper.) 2. A rosin type flux with a chlorine content of 0.2% or less shall be used. The rosin flux with low halogen content is recommended. 3. When soldering, use one of the following time/ temperature methods for acceptable solder joints. Make sure the devices have been properly prepared with flux prior soldering. * Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow): Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process. Excessive reflow will effect the resin resulting in a potential failure or latent defect. The recommended reflow temperature profile is shown below. The temperature of the reflow profile must be measured at the device lead. Reflow temperature profile and condition: Temperature (deg-c) (2) (4) RT (1) (3) Time (1) Temperature rise: 5deg-C/sec. (2) Preheating: 140-0deg-C 60-1sec. (3) Main heating: 0deg-C over sec. (4) Main heating: 250deg-C over. 10 sec. (0deg-C max.) * Measurement point: Device lead. 4. The above-recommended conditions were confirmed using the manufacture s equipment and materials. However, when soldering these products, the soldering condition should be verified by customer using their equipment and materials. 15

16 C-band Power Amplifier MMIC Eudyna Devices USA Inc Zanker Rd. San Jose, CA , U.S.A. TEL: FAX: Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) FAX: +44 (0) Eudyna Devices International Srl Via Teglio 8/2-158 Milano, Italy TEL: FAX: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of Eudyna Devices Inc. or others. 07 Eudyna Devices Inc. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: FAX: Eudyna Devices Inc Kamisukiahara, showa-cho Nakakomagun, Yamanashi , Japan (Kokubo Industrial Park) TEL FAX Sales Division 1, Kanai-cho, Sakae-ku Yokohama, , Japan TEL FAX