Drain-Source Voltage VDD 10 Gate-Source Voltage VGG -3. RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Drain-Source Voltage VDD =< 6

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Preliminary FEATURES Output Power; P1dB = 25 dbm (Typ.) High Gain; GL = 25 db(typ.) Wide Frequency Band ; 1. 15.

1 Preliminary FEATURES Output Power; P1dB = 25 dbm (Typ.) High Gain; GL = 25 db(typ.) Wide Frequency Band ; GHz Impedance Matched Zin/Zout = 5Ω ES/EMM579X X/ Ku-Band Power Amplifier MMIC DESCRIPTION The ES/EMM579X is a wide band power amplifier MMIC that contains a four stage amplifier, internally matched, for standard communications band in 1. to 15.4GHz frequency range. This product is well suited for point-to-point radio and VSAT applications. Eudyna s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Stmbol Rating Unit Drain-Source Voltage VDD 1 V Gate-Source Voltage VGG -3 V Input Power Pin T.B.D. dbm Strage Temperature Tstg to +5 RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Unit Drain-Source Voltage VDD =< 6 V Input Power Pin T.B.D. dbm Operating Backside Temperature Top -4 to +85 This Product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 ) Item Symbol Test Conditions Limits Min. Typ. Max. Unit Frequency Range f VDD=6.V GHz Output Power at 1dB G.C.P. P1dB IDD(DC)=35mA typ dbm Linear Gain GL Zs=Zl=5ohm *1 *1 *1 : f=1.~.7ghz 23 *2 25 *2 - db Power Added Efficiency at 1dB G.C.P. Nadd *2 : f=.7~15.4ghz Third Order Intermodulation *3 IM3 *3 *3 : df=1mhz 35 *1 TBD 2-Tone Test 4 *2 - dbc Drain Current at 1dB G.C.P. Idd Po=15dBm S.C.L TBD ma Input Return Loss at Pin=-dBm RLin db Output Return Loss at Pin=-dBm RLout db G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level ESD Note : Based on EIAJ ED-471 C-111A(C=1pF, R=1.5k ) ~ 199V Edition 1. November, 6 1

2 ES/EMM579X X / Ku-band Power Amplifier MMIC Output Power vs. IDD(DC)=35mA Frequency [GHz] Pin=-8dBm -4dBm dbm 4dBm P1dB GHz GHz GHz 15.4GHz Power Added Efficiency vs. IDD(DC)=35mA IMD vs. Output IDD(DC)=35mA Power Added Efficiency [] Frequency [GHz] Pin=-8dBm -4dBm dbm 4dBm P1dB GHz GHz GHz 15.4GHz 8 2

3 ES/EMM579X X / Ku-Band Power Amplifier MMIC IM3 vs. S.C.L IM3 [dbc] Frequency [GHz] P1dB, G1dB vs. Frequency by Drain P1dB, G1dB vs. Frequency by Drain P1dB [dbm] Solid Line : P1dB Dash Line : G1dB 32 3 G1dB [db] P1dB [dbm] Solid Line : P1dB Dash Line : G1dB 32 3 G1dB [db] Frequency [GHz] 4dBm P1dB Frequency [GHz] IDD(DC)=25mA 35mA 45mA 4dBm P1dB 3

4 ES/EMM579X X / Ku-band Power Amplifier MMIC by Drain Voltage by Drain IDD(DC)=35mA by Drain IDD(DC)=35mA by Drain IDD(DC)=35mA

5 ES/EMM579X X / Ku-Band Power Amplifier MMIC by Drain Current by Drain VDD=6V IDD(DC)=25mA 35mA 45mA IDD(DC)=25mA 35mA 45mA by Drain VDD=6V by Drain VDD=6V IDD(DC)=25mA 35mA 45mA IDD(DC)=25mA 35mA 45mA 5

6 ES/EMM579X X / Ku-band Power Amplifier MMIC IMD vs. Output Power by Drain IDD(DC)=35mA IMD vs. Output Power by Drain IDD(DC)=35mA IMD vs. Output Power by Drain Voltage IMD vs. Output Power by Drain IDD(DC)=35mA

7 ES/EMM579X X / Ku-Band Power Amplifier MMIC IMD vs. Output Power by Drain VDD=6V IMD vs. Output Power by Drain VDD=6V IDD(DC)=25mA 35mA 45mA IDD(DC)=25mA 35mA 45mA IMD vs. Output Power by Drain Current IMD vs. Output Power by Drain VDD=6V IDD(DC)=25mA 35mA 45mA IDD(DC)=25mA 35mA 45mA 7

8 ES/EMM579X X / Ku-band Power Amplifier MMIC S-Parameter VDD=6V, IDD=35mA Sxx [db] Freq (GHz) S11 S21 S 8

9 S-Parameter 1- ()*+*-, 1 ). /*+*-, 1-1 ES/EMM579X X / Ku-Band Power Amplifier MMIC 9

10 ES/EMM579X X / Ku-band Power Amplifier MMIC Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG RF IN 1355 RF OUT VDD1 VDD2 VDD3 VDD4 Chip Size : 2 2 3um x 3 3um Chip Thickness : um Bonding Pad Size : 9um x 9um(VDD, VGG), um x 9um (RF) 1

11 ES/EMM579X X / Ku-Band Power Amplifier MMIC Assembly Diagrams Recommended assembly VGG 1 uf 1pF RF_in RF_out 5ohm Line 5ohm Line 1pF 1pF 1pF 1pF 1 uf VDD Copper is the recommended material for the package or carrier. 11

12 ES/EMM579X X / Ku-band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc Zanker Rd. San Jose, CA , U.S.A. TEL: FAX: Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 () 548 FAX: +44 () Eudyna Devices International Srl Via Teglio 8/2-158 Milano, Italy TEL: Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 196B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: FAX: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: 3 Do not put these products into the mouth. 3 Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. 3 Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of Eudyna Devices Inc. or others. 6 Eudyna Devices Inc. Eudyna Devices Inc. 1 Kamisukiahara, showa-cho Nakakomagun, Yamanashi , Japan (Kokubo Industrial Park) TEL FAX Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 4-845, Japan TEL FAX

FMM5820X Ka-Band Power Amplifier MMIC

FMM5820X Ka-Band Power Amplifier MMIC FEATURES High Output Power; = 35.5 dbm (Typ.) High Linear Gain; GL = db(typ.) Frequency Band ; 29.5 -. GHz Impedance Matched Zin/Zout = 5Ω FMM582X DESCRIPTION The FMM582X is a power amplifier MMIC that