GPS LOW NOISE AMPLIFIER GaAs MMIC. -2.0dBm GND RFOUT

Transcription

1 GPS LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP operated by single low positive power supply. This amplifier can be tuned to wide frequency point (.GHz~.GHz). An ultra-small and ultra-thin package of USB-A8 is adopted. PACKAGE OUTLINE NJG7HA8 FEATURES Low voltage operation Low current consumption High small signal gain Low noise figure Input power at db gain compression point High input IP Ultra-small & ultra-thin package +.7V typ..ma typ. 9.dB f=.7ghz.7db f=.7ghz -. dbm -.dbm USB-A8 (Package size:.x.x.8mm) PIN CONFIGURATION HA8 Type (Top View) RFIN Bias Circuit RFOUT Pin connection. RFOUT... RFIN.. Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver

2 ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V DD. V Input power Pin V DD =.7V + dbm Power dissipation P D On PCB board, Tjmax= C mw Operating temperature T opr -~+8 C Storage temperature T stg -~+ C ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: V DD =.7V, f RF =7MHz, T a =+ C, Z s =Z l = ohm, with application circuit. PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq GHz Operating voltage V DD..7. V Operating current I DD RF OFF -.. ma Small signal gain Gain db Noise figure Input power at db gain compression point Input rd order intercept point NF Exclude PCB & connector losses (IN:.dB) -.7. db P -db(in) dbm IIP f=f RF, f=f RF +khz, Pin=-dBm dbm RF IN VSWR VSWRi -.. RF OUT VSWR VSWRo

3 TERMINAL INFORMATION No. SYMBOL DESCRIPTION RFOUT RF Output and voltage supply pin. An external output matching circuit and a bypass capacitor are required. L is a RF choke inductor. These elements are used as output matching circuit. Ground terminal. (V) Ground terminal. (V) RFIN RF input pin. A DC blocking capacitor is not required. An external input matching circuit is required. Ground terminal. (V) Ground terminal. (V) CAUTION ) Ground terminal (,,, ) should be connected with the ground plane as low inductance as possible. - -

4 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+ C, V DD =.7V, Zs=Zl= ohm, with application circuit.) Pout vs. Pin (VDD=.7V, frf=7mhz) Gain, IDD vs. Pin (VDD=.7V, frf=7mhz) 8 Pout (dbm) - - Pout Gain (db) 8 Gain IDD 7 IDD (ma) - - P-dB(IN)=-.dBm P-dB(IN)=-.dBm Pin (dbm) Pin (dbm) NF, Gain vs. frequency (VDD=.7V) Pout, IM vs. Pin (VDD=.7V, frf=7+7.mhz) Noise Figure (db). Gain. 9 NF 8. 7 (NF: Exclude PCB, Connector Losses).... frequency (GHz) Gain (db) Pout, IM (dbm) Pout IM -8 IIP=-.9dBm Pin (dbm) k factor vs. frequency (VDD=.7V) k factor frequency (GHz) - -

5 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+ C, V DD =.7V, Zs=Zl= ohm, with application circuit.) Gain, NF vs. VDD (frf=7mhz). - P-dB(IN) vs. VDD (frf=7mhz) Gain (db) 8 Gain NF.. NF (db) P-dB(IN) (dbm) P-dB(IN) VDD (V) VDD (V) OIP, IIP vs. VDD (frf=7+7.mhz, Pin=-dBm) VSWR vs. VDD (frf=7mhz) OIP (dbm) 8 OIP IIP IIP (dbm) VSWRi, VSWRo VSWRi VSWRo VDD (V) VDD (V) IDD vs. VDD (RF OFF) IDD (ma) IDD VDD (V) - -

6 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+ C, V DD =.7V, Zs=Zl= ohm, with application circuit.) Gain, NF vs. Temperature (frf=7mhz). - P-dB(IN) vs. Temperature (frf=7mhz) - Gain (db) 8 Gain NF... NF (db) P-dB(IN) (dbm) P-dB(IN) - Temperature ( o C) - - Temperature ( o C) OIP, IIP vs. Temperature (frf=7+7.mhz, Pin=-dBm) VSWR vs. Temperature (f=7mhz) OIP (dbm) OIP IIP (dbm) VSWRi, VSWRo VSWRi VSWRo IIP Temperature ( o C) - Temperature ( o C) IDD vs. Temperature (RF OFF) IDD (ma) IDD - Temperature ( o C) - -

7 ELECTRICAL CHARACTERISTICS (Conditions: Ta=+ C, V DD =.7V, Zs=Zl= ohm, with application circuit.) - 7 -

8 APPLICATION CIRCUIT HA8 Type (Top View) RF IN L 8.nH RFIN L nh Bias Circuit RFOUT L nh C.pF L RF OUT.8nH V DD =.7V C pf Pin INDEX TEST PCB LAYOUT (Top View) Parts list Parts ID Comment RF IN L L L C L C V DD RF OUT L ~ L L C ~ C MURATA (LQPT Series) TDK (MLK Series) MURATA (GRM Series) PCB (FR-): t=.mm MICROSTRIP LINE WIDTH =.mm (Z = ohm) PCB SIZE=.mm x.mm PRECAUTION: In order to prevent stability degradation in high frequency range, please prepare ground plane between terminal (RFIN) and terminal (RFOUT)

9 MEASUREMENT BLOCK DIAGRAM V =.7V VDD=.9V RF Input DUT RF Output Port Port Network Analyzer S parameter Measurement Block Diagram V =.7V VDD=.9V RF Input DUT RF Output Noise Source N.S. Output Input NF Analyzer Meter Noise Figure Measurement Block Diagram freq freq=8.mhz Signal Generator Signal Generator freq=8.mhz freq Isolator Isolator Power Comb. Variable db Attenuator RF Input DUT RFOutput V DD =.7V VDD=.9V Spectrum Analyzer Center=8.Hz Span=kHz RBW=kHz VBW=Hz IIP Measurement Block Diagram - 9 -

10 PACKAGE OUTLINE (USB-A8).8± S S TERMINAL TREAT :Au Substrate :FR Molding material :Epoxy resin UNIT :mm WEIGHT :.mg. (MIN.).±. C. R..±..8..±...±. Photo resist coating..±.7.±. Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - -