2GHz BAND LOW NOISE AMPLIFIER

Transcription

1 GHz BAND LOW NOISE AMPLIFIER GENERAL DESCRIPTION is a low noise amplifier GaAs MMIC designed for GHz band application, and.ghz to.ghz operation with modified schematic. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen high IIP and a low noise is achieved at the High gain mode. And low current consumption can be achieved at the low gain mode because LNA enters the state of the standby. An ultra-small and ultra-thin package of the USB-B is adopted. PACKAGE OUTLINE APPLICATIONS W-CDMA and LTE application W-LAN and WiMAX application Note: Please check the Application Note for LTE, WLAN and WiMAX FEATURES Operating frequency range.ghz to.ghz Low voltage operation +.V typ. Low CTL voltage operation +.V typ. Low current consumption.ma CTL =.V µa CTL =V High gain.db CTL =.V, f RF =MHz Low noise figure.db CTL =.V, f RF =MHz Pin at db Gain Compression point -.dbm CTL =.V, f RF =MHz +.dbm CTL =V, f RF =MHz High input IP dbm CTL =.V, f RF =MHz +.dbm CTL =V, f RF =MHz Small package USB-B (Package size:.mmx.mmx.mm typ.) PIN CONFIGURATION RFIN VCTL Logic Circuit (Top View) Bias Circuit RFOUT VINV Pin Connection. VINV.. RF OUT.. RF IN.. VCTL. Pin INDEX Note: Specifications and description listed in this catalog are subject to change without prior notice. Ver

2 ABSOLUTE MAXIMUM RATINGS Ta=+ C, Zs=Zl=Ω PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Inverter supply voltage V INV. V Control voltage V CTL. V Input power Pin V DD =.V + dbm Power dissipation P D on PCB board, Tjmax= C mw Operating temperature T opr - to + C Storage temperature T stg - to + C ELECTRICAL CHARACTERISTICS (DC) (General Conditions: V DD =V INV =.V, Ta=+ C, Zs=Zl=Ω) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD... V Inverter supply voltage V INV... V Control voltage (High) V CTL (H).. V INV +. V Control voltage (Low) V CTL (L). V Operating current (LNA High Gain Mode) Operating current (LNA High Gain Mode) Inverter current (LNA High Gain Mode) Inverter current (LNA High Gain Mode) I DD RF OFF, V CTL =.V -.. ma I DD RFOFF, V CTL =V - µa I INV RF OFF, V CTL =.V - 9 µa I INV RF OFF, V CTL =V - µa Control current I CTL RF OFF, V CTL =.V - µa - -

3 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: V DD =V INV =.V, V CTL =.V, f RF =MHz, Ta=+ C, Zs=Zl=Ω) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain Noise figure db gain compression output power rd order Input Intercept Point Gain NF Exclude PCB & connector losses (IN:.9dB, OUT:.dB) Exclude PCB & connector losses (IN:.9dB).. 9. db -.. db P -db(in) dbm IIP_ f=f RF, f=f RF +khz, Pin=-dBm -. - dbm RF IN VSWR VSWR I RF OUT VSWR VSWR o ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: V DD =V INV =.V, V CTL =V, f RF =MHz, Ta=+ C, Zs=Zl=Ω) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain Noise figure db gain compression output power rd order Input Intercept Point Gain NF Exclude PCB & connector losses (IN:.9dB, OUT:.dB) Exclude PCB & connector losses (IN:.9dB) db -.. db P -db(in) dbm IIP_ F=f RF, f=f RF +khz, Pin=-dBm +. - dbm RF IN VSWR VSWR I RF OUT VSWR VSWR o

4 TERMINAL INFORMATION No. SYMBOL DESCRIPTION VINV RFOUT RFIN VCTL Inverter supply voltage terminal. Please place a bypass capacitor between this and for avoiding RF noise from outside. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF output signal terminal. RF signal comes out from this terminal, and goes through an external matching circuit connected to this. This terminal doubles as the drain terminal of the LNA. Please connect this terminal to the power supply via inductor L. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF input signal terminal. RF signal is input through external matching circuit connected to this terminal. This terminal integrates an input DC blocking capacitor. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Control voltage terminal. Inputting a logic-high level, the LNA turn at high gain mode. Inputting a logic-low level, the LNA turn at Low gain mode. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. CAUTION ) Ground terminal (No.,,, ) should be connected to the ground plane as close as possible for excellent RF performance, because distance to makes parasitic inductance. TRUTH TABLE H =V CTL (H), L =V CTL (L) V CTL LNA circuit Bypass circuit Mode select L OFF ON Low gain mode H ON OFF High gain mode - -

5 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =.V, Zs=Zl=Ω Pout vs. Pin (f=mhz) Gain, IDD vs. Pin (f=mhz) Gain Pout (dbm) - - Pout Gain (db) IDD IDD (ma) - - P-dB(IN)=-.dBm P-dB(IN)=-.dBm Pin (dbm) Pin (dbm) Pout, IM vs. Pin (f=mhz, f=f+khz) OIP, IIP vs. frequency (f=.~.ghz, f=f+khz, Pin=-dBm) Pout, IM (dbm) Pout IM IIP=+.dBm OIP (dbm) OIP IIP - IIP (dbm) Pin (dbm) frequency (GHz) NF vs. frequency (f=~.ghz) k factor vs. frequency (f=m~ghz). (Exclude PCB, Connector Losses) Noise Figure (db).. NF k factor frequency (GHz) frequency (GHz) - -

6 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =.V, Zs=Zl=Ω Gain, NF vs. VDD, VINV (f=mhz) - P-dB(IN) vs. VDD, VINV (f=mhz) - Gain (db) Gain NF NF (db) P-dB(IN) (dbm) P-dB(IN) OIP, IIP vs. VDD, VINV (f=mhz, f=f+khz, Pin=-dBm) VSWR vs. VDD, VINV (f=mhz) OIP (dbm) OIP IIP - IIP (dbm) VSWRi, VSWRo VSWRi VSWRo IDD vs. VDD, VINV (RF OFF) IDD (ma) IDD.. - -

7 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =.V, Zs=Zl=Ω Gain, NF vs. Temperature (f=mhz) - P-dB(IN) vs. Temperature (f=mhz) - Gain (db) Gain NF NF (db) P-dB(IN) (dbm) P-dB(IN) OIP, IIP vs. Temperature (f=mhz, f=f+khz, Pin=-dBm) VSWR vs. Temperature (f=mhz) OIP (dbm) OIP IIP IIP (dbm) VSWRi, VSWRo VSWRi VSWRo IDD vs. Temperature (RF OFF) IDD (ma) IDD - - -

8 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =.V, Zs=Zl=Ω - -

9 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =V, Zs=Zl=Ω Pout vs. Pin (f=mhz) - Gain, IDD vs. Pin (f=mhz) - Gain Pout (dbm) Pout Gain (db) IDD IDD (ua) - P-dB(IN)=+.dBm - P-dB(IN)=+.dBm Pin (dbm) Pin (dbm) Pout, IM vs. Pin (f=mhz, f=f+khz) OIP, IIP vs. frequency (f=.~.ghz, f=f+khz, Pin=-dBm) Pout, IM (dbm) Pout IM IIP=+.dBm OIP (dbm) - OIP IIP IIP (dbm) Pin (dbm) frequency (GHz) NF vs. frequency (f=~.ghz) k factor vs. frequency (f=m~ghz) (Exclude PCB, Connector Losses) Noise Figure (db) 9 NF k factor frequency (GHz) frequency (GHz) - 9 -

10 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =V, Zs=Zl=Ω - Gain, NF vs. VDD, VINV (f=mhz) P-dB(IN) vs. VDD, VINV (f=mhz) - Gain (db) Gain NF 9 NF (db) P-dB(IN) (dbm) 9 P-dB(IN) OIP, IIP vs. VDD, VINV (f=mhz, f=f+khz, Pin=-dBm) VSWR vs. VDD, VINV (f=mhz) OIP (dbm) OIP IIP IIP (dbm) VSWRi, VSWRo VSWRi VSWRo IDD vs. VDD, VINV (RF OFF). IDD (ua)... IDD.. - -

11 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =V, Zs=Zl=Ω - Gain, NF vs. Temperature (f=mhz) P-dB(IN) vs. Temperature (f=mhz) - Gain (db) Gain NF NF (db) P-dB(IN) (dbm) 9 P-dB(IN) OIP, IIP vs. Temperature (f=mhz, f=f+khz, Pin=-dBm) VSWR vs. Temperature (f=mhz) OIP (dbm) OIP IIP IIP (dbm) VSWRi, VSWRo VSWRi VSWRo IDD vs. Temperature (RF OFF). IDD (ua)... IDD - - -

12 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) General Conditions: Ta=+ C, V DD =V INV =.V, V CTL =V, Zs=Zl=Ω - -

13 APPLICATION CIRCUIT (Top View) RF IN L.nH RFIN RFOUT L nh C pf RF OUT L.nH L nh V DD =.V C pf Bias Circuit V CTL =V or.v VCTL Logic Circuit VINV V INV =.V C pf Pin INDEX TEST PCB LAYOUT (Top View) PARTS LIST Parts ID Comment L, L TAIYO-YUDEN (HK) V DD L, L TDK (MLGQ) C C to C MURATA (GRM) RF IN L L L L C RF OUT C V CTL V INV PCB (FR-) t=.mm MICROSTRIP LINE WIDTH =.mm (Z =Ω) PCB SIZE=.mmx.mm - -

14 PACKAGE OUTLINE (USB-B) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - -