30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC
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- Jeffery Anthony
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1 AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide range of frequency from 3 MHz to 12 MHz, being suitable for use in both receiver and transmitter of telecommunication system up to 1.2 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOT89 package and passes through the stringent DC, RF, and reliability tests. 1.2 Features 2. db gain at 5 MHz Application circuit 27. dbm P1dB at 5 MHz 42. dbm OIP3 at 5 MHz Gain flatness =.6 db at 47 ~ 86 MHz Vdevice C3 5 input & output matching MTTF > 1 Years Single supply: +5 V, +8 V RF IN C1 AWB589 L1 C2 RF OUT 1.3 Applications Wide-band amplifier at 3 ~ 12 MHz IF amplifier 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4. mm 2, surface mount RoHS-compliant 1/25 ASB Inc. sales@asb.co.kr April 217
2 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5, +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current ma Device Voltage V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Min Typ Max Unit Frequency 5 MHz Gain 19.5 db S11-2. db S22-2. db Noise Figure 3. db OIP3 42. dbm P1dB 27. dbm Current 17 ma Device Voltage +8. V 2.3 Pin Configuration Pin Description Simplified Outline 1 RF_IN 2 Ground 3 RF_OUT & Bias 2/25 ASB Inc. sales@asb.co.kr April 217
3 2.4 Absolute Maximum Ratings Parameters Operation Case Temperature Storage Temperature Device Voltage Operation Junction Temperature Input RF Power (At 3 MHz, CW, 5 matched)* Max. Ratings -4 to 85 C -4 to 15 C +1 V +16 C +21 dbm The operation of this device in excess of any of these limits may cause permanent damage. * Refer to the max. input RF power data at The max. input RF power, in principle, depends upon application frequency, matching circuit, and device voltage. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 43 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 75 V MM Class A Voltage Level: 1 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 26 C reflow (Intentionally Blanked) 3/25 ASB Inc. sales@asb.co.kr April 217
4 3. Application: 3 ~ 512 MHz (Vdevice = +8 V) 3.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 47 nh 126 RF choke inductor Murata 4/25 ASB Inc. sales@asb.co.kr April 217
5 3.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 3.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S11 K S21 S12 S Stability Factor, K Frequency (MHz) 5/25 ASB Inc. sales@asb.co.kr April 217
6 4. Application: 3 ~ 512 MHz (Vdevice = +8 V, Additional Matching) 4.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN L3 C1 L2 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L RF choke inductor Murata L2 5.6 nh 63 Matching inductor Murata L3 68 nh 63 Matching inductor Samsung 6/25 ASB Inc. sales@asb.co.kr April 217
7 4.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 4.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S11 K S21 S12 S Stability Factor, K Frequency (MHz) 7/25 ASB Inc. sales@asb.co.kr April 217
8 4.4 Plots of Performances with Temperature 23 Frequency = 25 MHz 22 Gain (db) Temperature ( C) 2 19 Current (ma) Temperature ( C) 8/25 ASB Inc. sales@asb.co.kr April 217
9 5 Frequency = 25 MHz 4 NF (db) Temperature ( C) Frequency = 25 MHz P1dB (dbm) Temperature ( C) Frequency = 25 MHz OIP3 (dbm) Temperature ( C) 9/25 ASB Inc. sales@asb.co.kr April 217
10 5. Application: 3 ~ 512 MHz (Vdevice = +5 V) 5.1 Application Circuit & Evaluation Board Vdevice = + 5V C3 R1 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 47 nh 126 RF choke inductor Murata R1 5.6 k 63 Bias resistor Samsung 1/25 ASB Inc. sales@asb.co.kr April 217
11 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +5. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 5.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S11 K S21 S Stability Factor, K Frequency (MHz) 11/25 ASB Inc. sales@asb.co.kr April 217
12 6. Application: 3 ~ 512 MHz (Vdevice = +5 V, Additional Matching) 6.1 Application Circuit & Evaluation Board Vdevice = +5 V C3 R1 L1 RF IN L3 C1 L2 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L RF choke inductor Murata L2 5.6 nh 63 Matching inductor Murata L3 68 nh 63 Matching inductor Samsung R1 5.6 k 63 Bias resistor Samsung 12/25 ASB Inc. sales@asb.co.kr April 217
13 6.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +5. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 6.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S22 K S11 S Stability Factor, K Frequency (MHz) 13/25 ASB Inc. sales@asb.co.kr April 217
14 7. Application: 47 ~ 86 MHz 7.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 12 nh 63 RF choke inductor Samsung 14/25 ASB Inc. sales@asb.co.kr April 217
15 7.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 7.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S11 S21 K S Stability Factor, K Frequency (MHz) 15/25 ASB Inc. sales@asb.co.kr April 217
16 8. Application: 47 ~ 86 MHz (Additional Matching) 8.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 L2 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 12 nh 63 RF choke inductor Samsung L2 4.7 nh 63 Matching inductor Murata 16/25 ASB Inc. sales@asb.co.kr April 217
17 8.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 8.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) K S22 S21 S12 S Stability Factor, K Frequency (MHz) 17/25 ASB Inc. sales@asb.co.kr April 217
18 9. Application: 1 MHz (IF) 9.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 47 nh 126 RF choke inductor Murata 18/25 ASB Inc. sales@asb.co.kr April 217
19 9.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency 1 MHz Gain 2. db S11-16 db S22-2 db Noise Figure 3. db Output IP3 1) 43. dbm Output P1dB 27. dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 9.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S22 S11 S12 S21 K Stability Factor, K Frequency (MHz) 19/25 ASB Inc. sales@asb.co.kr April 217
20 1. Application: 12 MHz 1.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 15 nh 63 RF choke inductor Murata 2/25 ASB Inc. sales@asb.co.kr April 217
21 1.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency 12 MHz Gain 18.5 db S db S db Noise Figure 3. db Output IP3 1) 4. dbm Output P1dB 26.5 dbm Current 17 ma Device Voltage +8. V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 1.3 Plot of S-parameter & Stability Factor 3 9 S-parameters (db) S12 S21 S11 S22 K Stability Factor, K Frequency (MHz) 21/25 ASB Inc. sales@asb.co.kr April 217
22 11. Application: Supply Voltage = +5, +6, +7 V 11.1 Application Circuit & Evaluation Board Vdevice C3 Rbias L1 RF IN C1 AWB589 C2 RF OUT PCB Information Material FR4 Thickness (mm).8 Size (mm) 4x4 EB No. EB-89-A1 Bill of Material Symbol Value Size Description Manufacturer AWB MMIC Amplifier ASB C1, C2 1 F 63 DC blocking capacitor Murata C3 1 F 85 Decoupling capacitor Murata L1 12 nh 63 RF choke inductor Murata R1 Rbias 63 Bias resistor Samsung 22/25 ASB Inc. sales@asb.co.kr April 217
23 11.2 Rbias vs Current Supply Voltage(V) Rbais(k ) Current(mA) 5 Not used Not used Not used Performance Table Supply voltage = +5, +6, +7 V, TA = +25 C, ZO = 5 Parameter Typical Unit Frequency MHz Gain db S db S db Noise Figure db Output IP3 1) dbm Output P1dB dbm Current ma Device Voltage V 1) OIP3 is measured with two tones at an output power of +12 dbm/tone separated by 1MHz. 23/25 ASB Inc. sales@asb.co.kr April 217
24 12. Package Outline (SOT89, 4.5x4.x1.5 mm) Part No. AWB589 Pxxxx Lot No. Symbols Dimensions (In mm) MIN NOM MAX A L b b C D D E E e H S e Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 24/25 ASB Inc. sales@asb.co.kr April 217
25 14. Recommended Soldering Reflow Profile 26 C 2~4 sec 2 C Ramp-up (3 C/sec) Ramp-down (6 C/sec) 15 C 6~18 sec (End of Datasheet) Copyright ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 25/25 ASB Inc. sales@asb.co.kr April 217
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Surface Mount Dual Matched MMIC Amplifier 50Ω DC to 5.2 GHz The Big Deal Gain, 14.1 db typ. at 2 GHz Dual matched amplifier for push-pull & balanced amplifiers High dynamic range CASE STYLE: JV2579 Product
TGA2602-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
TQP3M9028 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 db gain, + dbm OIP3, and 1.8 db Noise
Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking
MGA-31816 0.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31816 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
Gain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89
WJA V Active-Bias InGaP HBT Gain Block
Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block
Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
TQP3M9018 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 6 Pin x mm QFN Package Product Features Functional Block Diagram -4 MHz.5 db Gain at 9 MHz. db Noise Figure
HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22
v.71 HMC59ST9 / 59ST9E Typical Applications The HMC59ST9 / HMC59ST9E is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications
Data Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking
MGA-31716.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31716 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
LOW NOISE AMPLIFIER GaAs MMIC. -4.0dBm
LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG7HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP operated by single low positive
TGA2601-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features NF = 0.95 db @ 900MHz at RF connectors of Demo board Gain = 20.5 db @ 900 MHz OIP3 = 30.0 dbm @ 1900MHz Output P1 db = 17.5 dbm @ 900MHz 5V/27mA, MTTF > 100 Years, MSL 1, Class 0 Lead-free/RoHS-compliant
400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
AH1. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (4) Absolute Maximum Rating
Product Features 25 4 MHz +41 dbm OIP3 3 db Noise Figure.5 db Gain +22 dbm P1dB Lead-free/Green/RoHS-compliant SOT-8 Package Single +5 V Supply MTTF > 1 years Applications Mobile Infrastructure CATV /
Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX
Ultra Linear Low Noise Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ultra High IP3 Broadband High Dynamic Range May be used as a replacement for RFMD SPF-5189Z a,b SOT-89 PACKAGE Product Overview
ASB ALE2045T2 Internally Matched LNA Module Datasheet
ASB ALE2045T2 Datasheet http://www.manuallib.com/asb/ale2045t2-internally-matched-lna-module-datasheet.html The plerow ACL-series is the compactly designed surface-mount module for the use of the LNA with
Features. Specifications
MGA-30489 0.25W Driver Amplifier Data Sheet Description Avago Technologies s MGA-30489 is a 0.25W highly dynamic range Driver Amplifier MMIC, housed in a SOT-89 standard plastic package. The device features
Monolithic Amplifier TSY-13LNB+ Wideband. 50Ω 0.03 to 1 GHz. The Big Deal
Wideband Monolithic Amplifier 50Ω 0.03 to 1 GHz The Big Deal Very wideband, 30 MHz 1 GHz Low NF over entire frequency band, 1.2 db Low current and low voltage (2.7V and 7.7 ma) Internal bypass switching
TAT Ω phemt Adjustable Gain RF Amplifier
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block Product Features Gain, return loss and bias externally
Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
SKY LF: MHz Low-Noise, Low-Current Amplifier
DATA SHEET SKY67013-396LF: 600-1500 MHz Low-Noise, Low-Current Amplifier Applications ISM band receivers General purpose LNAs Features Low NF: 0.85 db @ 900 MHz Gain: 14 db @ 900 MHz Flexible supply voltage
QPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
Monolithic Amplifier EHA-163L+ Low Current, Wideband, Flat Gain. 50Ω DC to 16 GHz. The Big Deal
Low Current, Wideband, Flat Gain Monolithic Amplifier 50Ω DC to 16 GHz The Big Deal Super Wideband, DC to 16 GHz Excelent Gain Flatness, ±0.75 up to 12 GHz Low Current, 20 ma CASE STYLE: MC1630-1 Product
CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
MMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
Preliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS
Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
MAAL DIESMB. Low Noise Amplifier DC - 28 GHz. Features. Functional Schematic 1. Description. Pin Configuration 2. Ordering Information. Rev.
MAAL-11141-DIE Features Ultra Wideband Performance Noise Figure: 1.4 db @ 8 GHz High Gain: 17 db @ 8 GHz Output IP3: 28 dbm @ 8 GHz Bias Voltage: V DD = - V Bias Current: I DSQ = 6 - ma Ω Matched Input
HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
MMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
TQP DC-6 GHz Gain Block
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
Broad Band: 5 to 300 MHz 5 to 300 MHz bandwidth covers primary CATV applications such as DOCSIS 3.1
Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω 5 to 300 MHz The Big Deal High IP3 Flat Gain / Excellent Return Loss Low Noise Figure SOT-89 PACKAGE Product Overview (RoHS compliant) is an advanced
GND N/C GND RF IN N/C N/C N/C GND
MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description
Features. Specifications. Applications
MGA-3889 4MHz - 26MHz Flat Gain High Linearity Gain Block Data Sheet Description Avago Technologies MGA-3889 is a broadband, flat gain, high linearity gain block MMIC amplifier achieved through the use
SKY LF: GHz High Linearity, Active Bias Low-Noise Amplifier
DATA SHEET SKY67102-396LF: 2.0-3.0 GHz High Linearity, Active Bias Low-Noise Amplifier Applications CDMA, WCDMA, TD-SCDMA, WiMAX, and LTE cellular infrastructure Ultra low-noise systems Features Ultra
DC to 1000 MHz IF Gain Block ADL5530
DC to MHz IF Gain Block ADL3 FEATURES Fixed gain of 6. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power
QPL9096 Ultra Low-Noise, Bypass LNA
General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
MMA M GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN
TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz
HMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
Amplifier Configuration
Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-33Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-33Z is a high performance Silicon Germanium