GNSS LOW NOISE AMPLIFIER

Transcription

1 GNSS LOW NOISE AMPLIFIER GENERAL DESCRIPTION The NJG11KA1 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier achieves high gain and a good balance between ultra-low noise figure and excellent VSWR, while low current consumption and high IP, respectively. The NJG11KA1 operates from +1.V to +.V supply voltage range and current consumes is as low as.ma. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. An ultra-small and easy mounting package of FLP-A1 is adopted. PACKAGE OUTLINE NJG11KA1 APPLICATIONS GNSS applications, like GPS, Galileo, GLONASS and COMPASS. FEATURES Low supply voltage 1.V/.V Low current consumption.ma V DD =.V 1.mA V DD =1.V High gain 1.dB f=17mhz, V DD =.V Low noise figure.db f=17mhz, V DD =.V High Input IP -.dbm f=17mhz, V DD =.V Small package FLP-A1 (Package size: 1.mm x 1.mm x.mm typ.) RoHS compliant and halogen free, MSL1 PIN CONFIGURATION (Top View) RFIN GND NC(GND) GND GND RFOUT 1 Pin connection 1. RFOUT. GND. GND. RFIN. GND. NC (GND) 1 Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver

2 ABSOLUTE MAXIMUM RATINGS NJG11KA1 Ta=+ C, Zs=Zl=Ω PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Input power P IN V DD =.V +1 dbm Power dissipation P D -layer FR PCB with through-hole (7.mmx7.mm), T j =1 C mw Operating temperature T opr - to + C Storage temperature T stg - to +1 C ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS) General conditions: V DD =.V, Ta=+ C PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Supply voltage V DD V Supply current 1 I DD 1 RF OFF, VDD=.V -.. ma Supply current I DD RF OFF, VDD=1.V ma - -

3 ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS) General conditions: V DD =.V, f RF =1.7GHz, Ta=+ C, Zs=Zl=Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small signal gain Gain db Noise figure Input power at 1dB gain compression point 1 Input rd order intercept point 1 NF1 Exclude PCB, Connector Losses(.dB) -..9 db P-1dB(IN) dbm IIP_1 f1=f RF, f=f1+khz, Pin=-dBm dbm RF input VSWR 1 VSWRi RF output VSWR 1 VSWRo ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS) General conditions: V DD =1.V, f RF =1.7GHz, Ta=+ C, Zs=Zl=Ω, with application circuit PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Small signal gain Gain -. - db Noise figure Input power at 1dB gain compression point Input rd order intercept point NF Exclude PCB, Connector Losses(.dB) -. - db P-1dB(IN) dbm IIP_ f1=f RF, f=f1+khz, Pin=-dBm dbm RF input VSWR VSWRi RF output VSWR VSWRo

4 TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 RFOUT RF output and voltage supply terminal. GND Ground terminal (V), Connect to the PCB ground plane. GND Ground terminal (V), Connect to the PCB ground plane. RFIN RF input terminal. DC blocking capacitor is not required. An external matching circuit is required. GND Ground terminal (V), Connect to the PCB ground plane. NC(GND) No connected terminal. This terminal is not connected with internal circuit. Please connect to the PCB ground Plane. - -

5 ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: Ta=+ C, V DD =.V, Zs=Zl=Ω, with application circuit.) 1 Pout vs. Pin (VDD=.V, frf=17mhz) Gain Gain, IDD vs. Pin (VDD=.V, frf=17mhz) 9 Pout (dbm) - Pout Gain (db) IDD (ma) - 1 IDD -1 P-1dB(IN)=-1.dBm Pin (dbm) P-1dB(IN)=-1.dBm Pin (dbm) Pout, IM vs. Pin (VDD=.V, f1=17mhz, f=f1+khz) OIP, IIP vs. frequency (VDD=.V, f1=1~1mhz, f=f1+khz, Pin=-dBm) Pout, IM (dbm) Pout IM - IIP=-.dBm Pin (dbm) OIP (dbm) OIP 1 IIP frequency (MHz) - IIP (dbm). NF, Gain vs. frequency (VDD=.V, f=1~1mhz) k factor vs. frequency (VDD=.V, f=mhz~ghz). Noise Figure (db) NF Gain 1 Gain (db) k factor 1 (NF: Exclude PCB, Connector Losses) frequency (MHz) 1 frequency (GHz) - -

6 ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: V DD =.V, Zs=Zl=Ω, with application circuit.) Gain, NF vs Temperature (VDD=.V, f=17mhz). - P-1dB(IN) vs. Temperature (VDD=.V, f=17mhz). -1 Gain (db) 1 19 Gain NF Noise Figure (db) P-1dB(IN) (dbm) P-1dB(IN) (NF: Exclude PCB, Connector Losses) OIP, IIP vs. Temperature (VDD=.V, f1=17mhz, f=f1+khz, Pin=-dBm).. VSWR vs. Temperature (VDD=.V, f=17mhz) VSWRi VSWRo OIP (dbm) OIP IIP 1 IIP (dbm) -1 - VSWR IDD vs. Temperature (VDD=.V, RF OFF) IDD (ma) IDD

7 ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: Ta=+ C, V DD =1.V, Zs=Zl=Ω, with application circuit.) Pout vs. Pin (VDD=1.V, frf=17mhz) Gain, IDD vs. Pin (VDD=1.V, frf=17mhz) Gain 7 Pout (dbm) Pout Gain (db) IDD IDD (ma) - P-1dB(IN)=-17.dBm Pin (dbm) 1 P-1dB(IN)=-17.dBm Pin (dbm) Pout, IM vs. Pin (VDD=1.V, f1=17mhz, f=f1+khz) OIP, IIP vs. frequency (VDD=1.V, f1=1~1mhz, f=f1+khz, Pin=-dBm) Pout, IM (dbm) Pout IM - IIP=-.dBm Pin (dbm) OIP (dbm) 1 OIP 1 1 IIP frequency (MHz) - - IIP (dbm). NF, Gain vs. frequency (VDD=1.V, f=1~1mhz) Noise Figure (db) NF Gain 1 1 Gain (db). 1 (NF: Exclude PCB, Connector Losses) frequency (MHz) - 7 -

8 ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: V DD =1.V, Zs=Zl=Ω, with application circuit.) 1 Gain, NF vs Temperature (VDD=1.V, f=17mhz). - P-1dB(IN) vs. Temperature (VDD=1.V, f=17mhz). -1 Gain (db) Gain NF Noise Figure (db) P-1dB(IN) (dbm) P-1dB(IN) (NF: Exclude PCB, Connector Losses) OIP, IIP vs. Temperature (VDD=1.V, f1=17mhz, f=f1+khz, Pin=-dBm) VSWR vs. Temperature (VDD=1.V, f=17mhz) VSWRi VSWRo OIP (dbm) OIP IIP - IIP (dbm) VSWR IDD vs. Temperature (VDD=1.V, RF OFF) k factor vs. Temperature (VDD=1.V, f=mhz~ghz) 1 IDD (ma) IDD k factor - o C - o C - o C 1 o C + o C + o C o C 1 frequency [GHz] - -

9 ELECTRICAL CHARACTERRISTICS (Conditions: Ta=+ C, Zs=Zl=Ω, with application circuit.) Gain, NF vs. VDD (f=17mhz). -1 P-1dB(IN) vs. VDD (f=17mhz). -1 Gain (db) Gain NF (NF: Exclude PCB, Connector Losses) VDD (V) Noise Figure (db) P-1dB(IN) (dbm) P-1dB(IN) VDD (V) OIP (dbm) OIP, IIP vs. VDD (f1=17mhz, f=f1+khz, Pin=-dBm) OIP IIP IIP (dbm) VSWR VSWRi VSWRo VSWR vs. VDD (f=17mhz) VDD (V) VDD (V) IDD vs. VDD (RF OFF) IDD (ma) IDD VDD (V) - 9 -

10 ELECTRICAL CHARACTERRISTICS (V DD =.V) (Conditions: Ta=+ C, V DD =.V, Zs=Zl=Ω, with application circuit.) VSWR S1, S1 S11, S Zin, Zout S11, S (MHz to GHz) S1, S1 (MHz to GHz) - -

11 ELECTRICAL CHARACTERRISTICS (V DD =1.V) (Conditions: Ta=+ C, V DD =1.V, Zs=Zl=Ω, with application circuit.) VSWR S1, S1 S11, S Zin, Zout S11, S (MHz to GHz) S1, S1 (MHz to GHz)

12 APPLICATION CIRCUIT (Top View) RF IN L1.nH RFIN GND GND GND NC(GND) RFOUT 1 L 1nH L.1nH C1 1.pF RF OUT 1 Pin INDEX C pf V DD TEST PCB LAYOUT (Top View) Parts list: Parts ID Comments RF IN L1 C1 L L C RF OUT L1 to L C1, C MURATA LQPT_ Series MURATA GRM Series 1 Pin INDEX V DD PCB (FR-): t=.mm MICROSTRIP LINE WIDTH =.mm (Z =Ω) PCB SIZE=1.mm x 1.mm Caution: In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC

13 MEASUREMENT BLOCK DIAGRAM S parameter Measurements V DD VDD=.9V RF Input DUT RF Output Port1 Port Network Analyzer S parameter Measurement Block Diagram IIP Measurements freq1 Signal Generator Signal Generator freq Isolator Isolator Power. Comb. db Attenuator RF Input DUT RF Output IF and IM Measurement Block Diagram for IIP V DD Spectrum Analyzer - 1 -

14 Noise Figure Measurements Measuring instruments NF Analyzer : Agilent 97A, 97A Noise Source : Agilent A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 1 Average mode : Point Bandwidth : MHz Loss comp : off Tcold : setting the temperature of noise source (.1K) NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and NF analyzer Input (Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 97A, 97A) Noise Source (Agilent A) * Noise source and DUT, IN DUT OUT Input (Ω) Noise Source Drive Output DUT and NF analyzer are connected directly. Measurement Setup - 1 -

15 PACKAGE OUTLINE (FLP-A1) Unit:mm...1 Unit: mm Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights