WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC

Transcription

1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJGKA is a wide band low noise amplifier GaAs MMIC designed for mobile TV application. And this amplifier can be tuned to wide frequency (7MHz~9MHz). The NJGKA has a LNA pass-through function to select high gain mode or low gain mode by low control voltage operation. The NJGKA features low current consumption, high linearity. An ultra-small and ultra-thin package of FLP6-A is adopted. PACKAGE OUTLINE NJGKA APPLICATIONS Wide band applications from 7MHz to 9MHz Mobile TV and Digital TV applications Mobile phone and tablet PC applications FEATURES Wide operating frequency range 7MHz~9MHz Low voltage operation +.8V/+.8V typ. [High gain mode] Low current consumption 6mA High gain +.db Low noise figure.db High P -.db Compression dbm High input IP3 +.dbm [Low gain mode] Low current consumption µa Gain (Low loss) -.db High P -.db Compression +7dBm High input IP3 +.dbm External components count 3 pcs. (capacitor: pcs, inductor: pc) Small package size FLP6-A (package size:.6mm x.6mm x.mm typ.) RoHS compliant and Halogen Free PIN CONFIGURATION GND GND 6 RFIN (Top View) Bias circuit Logic circuit 3 RFOUT GND VCTL Pin INDEX PIN CONNECTION. VCTL. GND 3. RFOUT. GND. GND 6. RFIN TRUTH TABLE V CTL H L H = V CTL(H) L = V CTL(L) LNA Mode High Gain Mode Low Gain Mode NOTE: The information on this datasheet is subject to change without notice Ver

2 ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Control voltage V CTL. V Input power P IN V DD =.8V + dbm Power dissipation P D -layer FR PCB with through-hole (7.mmx7.mm), T j = C 8 mw Operating temperature T opr -~+8 C Storage temperature T stg -~+ C ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS General conditions: V DD =.8V, T a =+ C, Z s =Z l = ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD V Control voltage (High) V CTL(H) V Control voltage (Low) V CTL(L)... V Operating current I DD RF OFF, V CTL =.8V ma Operating current I DD RF OFF, V CTL =V -.. µa Control current I CTL RF OFF, V CTL =.8V µa - -

3 ELECTRICAL CHARACTERISTICS RF CHARACTERISTICS (High Gain Mode) Conditions: V DD =.8V, V CTL =.8V, f RF =7~9MHz, T a =+ C, Z s =Z l =ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain Noise figure Input power db gain compression Input 3rd order intercept point Isolation Gain NF Exclude PCB, connector losses* Exclude PCB & connector losses*.. 8. db -..9 db P -db(in) dbm IIP3_ ISL f=f RF, f=f RF +khz, P IN =-6dBm Exclude PCB & connector losses* dbm db RF IN VSWR VSWRi RF OUT VSWR VSWRo * Input & output PCB and connector losses:.3db(at 7MHz),.88dB(6MHz),.dB(at 9MHz) * Input PCB and connector losses:.8db(7mhz),.db(6mhz),.6db(9mhz) ELECTRICAL CHARACTERISTICS RF CHARACTERISTICS (Low Gain Mode) Conditions: V DD =.8V, V CTL =V, f RF =7~9MHz, T a =+ C, Z s =Z l =ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain Input power at db gain compression Input 3rd order intercept point Gain Exclude PCB & connector losses* db P -db(in) dbm IIP3_ f=f RF, f=f RF +khz, P IN =-8dBm dbm RF IN VSWR VSWRi RF OUT VSWR VSWRo * Input & output PCB and connector losses:.3db(at 7MHz),.88dB(6MHz),.dB(at 9MHz) - 3 -

4 ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS General conditions: V DD =.8V, T a =+ C, Z s =Z l = ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD V Control voltage (High) V CTL(H) V Control voltage (Low) V CTL(L) -. - V Operating current I DD RF OFF, V CTL =.8V -. - ma Operating current I DD RF OFF, V CTL =V µa Control current I CTL RF OFF, V CTL =.8V µa ELECTRICAL CHARACTERISTICS RF CHARACTERISTICS (High Gain Mode) Conditions: V DD =.8V, V CTL =.8V, f RF =7~9MHz, T a =+ C, Z s =Z l =ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain Noise figure Input power db gain compression Input 3rd order intercept point Isolation Gain NF Exclude PCB, connector losses* Exclude PCB & connector losses* -. - db db P -db(in) dbm IIP3_ ISL f=f RF, f=f RF +khz, P IN =-6dBm Exclude PCB & connector losses* dbm db RF IN VSWR VSWRi RF OUT VSWR VSWRo * Input and output PCB, connector losses :.3dB(at 7MHz),.88dB(at 6MHz),.dB(at 9MHz) * Input PCB, connector losses :.8dB(at 7MHz),.dB(at 6MHz),.6dB(at 9MHz) - -

5 ELECTRICAL CHARACTERISTICS RF CHARACTERISTICS (Low Gain Mode) Conditions: V DD =.8V, V CTL =V, f RF =7~9MHz, T a =+ C, Z s =Z l =ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain Input power at db gain compression Input 3rd order intercept point Gain Exclude PCB & connector losses* db P -db(in) dbm IIP3_ f=f RF, f=f RF +khz, P IN =-8dBm dbm RF IN VSWR VSWRi RF OUT VSWR VSWRo * Input and output PCB, connector losses :.3dB(at 7MHz),.88dB(at 6MHz),.dB(at 9MHz) TERMINAL INFORMATION No. SYMBOL DESCRIPTION VCTL Control voltage supply terminal. GND 3 RFOUT GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. RF output terminal. This terminal is also the power supply terminal of the LNA. please use inductor (L) to connect power supply. Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. GND Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. 6 RFIN RF input terminal. This IC is integrated an input DC blocking capacitor. - -

6 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+, V DD =.8V, V CTL =.8V, Zs=Zl=ohm, with application circuit) Pout vs. Pin (freq=6mhz) 6 Gain, IDD vs. Pin (freq=6mhz) Gain Pout (dbm) - - Pout Gain (db) IDD 3 IDD (ma) -3 8 P-dB(IN)=dBm Pin (dbm) P-dB(IN)=dBm Pin (dbm) Pout, IM3 vs. Pin (f=6mhz, f=f+khz) NF, Gain vs. frequency (freq=~mhz) 6 Pout, IM3 (dbm) Pout IM3-8 IIP3=+.dBm Pin (dbm) Noise Figure (db) 3. 3 Gain. 8 NF. 6. (Exclude PCB, Connector Losses) frequency (MHz) Gain (db) P-dB(IN) vs. frequency (freq=~mhz) IIP3, OIP3 vs. frequency (f=~mhz, f=f+khz, Pin=-6dBm) OIP3 P-dB(IN) (dbm) - IIP3, OIP3 (dbm) IIP3 - frequency (MHz) frequency (MHz) - 6 -

7 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+, V CTL =.8V, Zs=Zl=ohm, with application circuit) NF, Gain vs. VDD (freq=6mhz) 6 P-dB(IN) vs. VDD (freq=6mhz) Noise Figure (db) NF Gain 8 6 Gain (db) P-dB(IN) (dbm) -. (Exclude PCB, Connector Losses) IIP3, OIP3 vs. VDD (f=6mhz, f=f+khz, Pin=-6dBm) 3 VSWR vs. VDD (freq=6mhz) OIP3 IIP3, OIP3 (dbm) IIP3 VSWR.. VSWRo VSWRi Isolation vs. VDD (freq=6mhz) IDD vs. VDD (RF OFF) - 8 Isolation (db) IDD (ma)

8 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition : V DD =.8V, V CTL =.8V, Zs=Zl=ohm, with application circuit) NF, Gain vs. Temperature (freq=6mhz) 6 P-dB(IN) vs. Tempareture (freq=6mhz) 3. Noise Figure (db) 3.. NF Gain 8 6 Gain (db) P-dB(IN) (dbm) -. (Exclude PCB, Connector Losses) Temperature ( o C) Tempareture ( o C) IIP3, OIP3 vs. Temperature (f=6mhz, f=f+khz, Pin=-6dBm) OIP3 3 VSWR vs. Temperature (freq=6mhz) IIP3, OIP3 (dbm) IIP3 VSWR.. VSWRo VSWRi Temperature ( o C) Temperature ( o C) Isolation vs. Temperature (freq=6mhz) IDD, ICTL vs. Temperature (RF OFF) - 8 IDD Isolation (db) IDD (ma) 6 ICTL ICTL (µa) Temperature ( o C) Temperature ( o C) - 8 -

9 ELECTRICAL CHARACTERISTICS(High Gain Mode) (Condition :Ta=+, V DD =.8V, V CTL =.8V, Zs=Zl=ohm, with application circuit) S, S S, S VSWRi, VSWRo Zin, Zout - 9 -

10 ELECTRICAL CHARACTERISTICS (High Gain Mode) (Condition :Ta=+, V DD =.8V, V CTL =.8V, Zs=Zl=ohm, with application circuit) S, S (MHz~GHz) S, S (MHz~GHz) K factor vs. frequency (freq=mhz~ghz) - o C - o C o C + o C +6 o C +8 o C K factor.. frequency (GHz) - -

11 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+, V DD =.8V, V CTL =V, Zs=Zl=ohm, with application circuit) Pout vs. Pin (freq=6mhz) Gain, IDD vs. Pin (freq=6mhz) - Gain Pout (dbm) - - Pout Gain (db) - -6 IDD 3 IDD (µa) -3-8 P-dB(IN)=+.dBm Pin (dbm) P-dB(IN)=.dBm Pin (dbm) Pout, IM3 vs. Pin (f=6mhz, f=f+khz) Gain vs. frequency (freq=~mhz) Pout, IM3 (dbm) Pout - IM IIP3=+3.8dBm Pin (dbm) Gain (db) frequency (MHz) P-dB(IN) vs. frequency (freq=~mhz) 3 IIP3, OIP3 vs. frequency (f=~mhz, f=f+khz, Pin=-8dBm) P-dB(IN) (dbm) IIP3, OIP3 (dbm) OIP3 IIP3 frequency (MHz) frequency (MHz) - -

12 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+, V CTL =V, Zs=Zl=ohm, with application circuit) Gain vs. VDD (freq=6mhz) P-dB(IN) vs. VDD (freq=6mhz) Gain (db) P-dB(IN) (dbm) IIP3, OIP3 vs. VDD (f=6mhz, f=f+khz, Pin=-8dBm) VSWR vs. VDD (freq=6mhz) IIP3, OIP3 (dbm) IIP3 OIP VSWR.8.6. VSWRi. VSWRo IDD vs. VDD (RF OFF) IDD (µa)

13 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition : V DD =.8V, V CTL =V, Zs=Zl=ohm, with application circuit) Gain vs. Temperature (freq=6mhz) P-dB(IN) vs. Tempareture (freq=6mhz) Gain (db) P-dB(IN) (dbm) Temperature ( o C) Tempareture ( o C) 3 IIP3, OIP3 vs. Temperature (f=6mhz, f=f+khz, Pin=-8dBm) VSWR vs. Temperature (freq=6mhz) IIP3, OIP3 (dbm) IIP3 OIP3 VSWR VSWRi Temperature ( o C) VSWRo Temperature ( o C) 3 IDD vs. Temperature (RF OFF) 8 IDD vs. VCTL (RF OFF) 7 6 IDD (µa) IDD (ma) 3 - o C + o C - o C o C +6 o C +8 o C Temperature ( o C) VCTL (V) - 3 -

14 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+, V DD =.8V, V CTL =V, Zs=Zl=ohm,with application circuit) S, S S, S VSWRi, VSWRo Zin, Zout - -

15 ELECTRICAL CHARACTERISTICS (Low Gain Mode) (Condition :Ta=+, V DD =.8V, V CTL =V, Zs=Zl=ohm,With application circuit) S, S (MHz~GHz) S, S (MHz~GHz) K factor vs. frequency (freq=mhz~ghz) - o C - o C o C + o C +6 o C +8 o C K factor.. frequency (GHz) - -

16 APPLICATION CIRCUIT (Top View) C 3 33pF RF OUT GND RFOUT L 7nH V DD GND Bias circuit GND C pf RF IN 6 Logic circuit V CTL RFIN VCTL Pin INDEX NOTES: L is an RF choke. (DC feed inductor) C is a coupling and DC blocking capacitor at the output. C is a bypass capacitor. TEST PCB LAYOUT (Top View) V DD PARTS LIST RF IN C L C RF OUT Parts ID. L C, C Notes TAIYO-YUDEN HK Series MURATA GRM Series V CTL Pin INDEX PCB (FR-): t=.mm MICROSTRIP LINE WIDTH =.mm (Z =Ω) PCB SIZE=6.8mm x 6.8mm PRECAUTION: In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC

17 MEASUREMENT BLOCK DIAGRAM S parameter Measurements V DD RF IN DUT RF OUT Port Port Network Analyzer S parameter Measurement Block Diagram IIP3 Measurements VDD freq. Signal Generator Signal Generator freq. db Attenuator db Attenuator Power Comb. 3dB Attenuator RF IN 3dB Attenuator DUT RF OUT Spectrum Analyzer IF and IM3 Measurement Block Diagram for IIP3(High Gain Mode) VDD freq. Signal Generator db Attenuator RF Amp. db Attenuator RF IN DUT RF OUT Spectrum Analyzer 6dB Attenuator db Attenuator IF and IM3 Measurement Block Diagram for IIP3(Low Gain Mode) - 7 -

18 Noise Figure Measurements Measuring instruments NF Analyzer : Agilent 8973A Noise Source : Agilent 36A Setting the NF analyzer Measurement mode form Device under test System downconverter : off Mode setup form Sideband Averages : 8 Average mode Bandwidth Loss comp Tcold : Amplifier : LSB : Point : MHz : off : setting the temperature of noise source (3.K) NF Analyzer (Agilent 8973A) Noise Source (Agilent 36A) * Noise source and NF analyzer Input (Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Noise Source (Agilent 36A) In DUT out Input (Ω) Noise Source Drive Output * Noise source and DUT, DUT and NF analyzer are connected directly. Measurement Setup - 8 -

19 PACKAGE OUTLINE (FLP6-A) Unit: mm Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages