W-LAN/WiMAX Application
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- Emerald Townsend
- 6 years ago
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1 1. 2.4GHz BAND APPLICATION W-LAN/WiMAX Application 1-1 SUMMARY The characteristics of 2.4GHz band have evaluated as follows. The evaluation circuit structure and measured data are reviewed MEASURED DATA1 (DC) General conditions: V DD =V INV =2.8V, T a =+2 o C, Z s =Z l =Ω Parameter Symbol s Measurement data Unit Operating Voltage V DD 2.8 V Inverter Voltage V INV 2.8 V Control Voltage (High) V CTL (H) 1.8 V Control Voltage (Low) V CTL (L) V Operating current I DD 1 RF OFF, V CTL =1.8V 2.31 ma Operating current I DD 2 RF OFF, V CTL =V.4 ua Inverter current I INV 1 RF OFF, V CTL =1.8V 89.8 ua Inverter current I INV 2 RF OFF, V CTL =V 16.1 ua Control current I CTL RF OFF, V CTL =1.8V 3.4 ua 1
2 1-2-2 MEASURED DATA2 (LNA HIGH GAIN MODE) General conditions: V DD =V INV =2.7V, V CTL =1.8V, f RF =24MHz, T a =+2 o C, Z s =Z l =Ω with application circuit Parameter Symbol s Measurement data Operating current I DD RF OFF 2.21 ma Small signal gain Gain 1. db Isolation ISO -28. db Unit Noise figure Pin at 1dB compression point Input 3rd order intercept point NF Exclude PCB/Connector losses (.11dB) 1.39 db P-1dB(IN) -8. dbm IIP3 f1=f RF, f2=f RF +1kHz, Pin=-32dBm +2.3 dbm RF Input port VSWR VSWRi 1.87 RF Output port VSWR VSWRo MEASURED DATA3 (LNA LOW GAIN MODE) General conditions: V DD =V INV =2.7V, V CTL =V, f RF =24MHz, T a =+2 o C, Z s =Z l =Ω with application circuit Parameter Symbol s Measurement data Unit Small signal gain Gain -6.9 db Isolation ISO -6.9 db Noise figure Pin at 1dB compression point Input 3rd order intercept point NF Exclude PCB/Connector losses (.11dB) 6.7 db P-1dB(IN) +1.2 dbm IIP3 f1=f RF, f2=f RF +1kHz, Pin=-16dBm dbm RF Input port VSWR VSWRi 1.34 RF Output port VSWR VSWRo
3 1-3 APPLICATION CIRCUIT (Top View) RF IN L2 1.8nH L1 2.7nH RFIN GND 6 GND 4 RFOUT 3 GND 2 L4 4.3nH C1 4pF L3 1.nH C2 1pF RF OUT V DD =2.7V Bias Circuit V CTL =V or 1.8V VCTL 7 Logic Circuit GND 8 VINV 1 C3 1pF V INV =2.7V 1 Pin INDEX 1-4 PCB DESIGN (Top View) Parts List Parts ID Comment RF IN L1 L2 L4 C3 V DD C2 L3 C1 RF OUT L1~L3 L4 C1~C3 TAIYO-YUDEN (HK1 Series) MURATA (LQW1A Series) MURATA (GRM1 Series) V CT L V INV PCB (FR-4): t=.2mm MICROSTRIP LINE WIDTH =.4mm (Z =Ω) PCB SIZE=17.mm x 17.mm 3
4 1--1 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) 2 Gain Pout vs. Pin 2 Gain Gain, IDD vs. Pin 4 1 P-1dB(OUT)=+6.2dBm 1 Gain 3 Pout (dbm) -1 Pout Gain (db) 1 P-1dB(IN)=-8.dBm 2 1 IDD (ma) -2 IDD P-1dB(IN)=-8.dBm V DD =V INV =2.7V, V CTL =1.8V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm V DD =V INV =2.7V, V CTL =1.8V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm Pout, IM3 (dbm) OIP3=+17.9dBm Pout IM3 Gain Pout, IM3 vs. Pin IIP3=+2.3dBm V DD =V INV =2.7V, V CTL =1.8V f RF = MHz, Ta=+2 o C, Zs=Zl=ohm OIP3 (dbm) OIP3 Gain OIP3, IIP3 vs. frequency frequency (MHz) IIP3 V DD =V INV =2.7V, V CTL =1.8V f RF =23~26MHz, Offset=+1kHz Pin=-32dBm Ta=+2 o C, Zs=Zl=ohm IIP3 (dbm) 4
5 1--2 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) NF (db) Gain NF, Gain vs. frequency Gain Gain (db) 2 12 NF (Exclude PCB, Connector Losses) frequency (MHz) V DD =V INV =2.7V, V CTL =1.8V f RF =23~26MHz, Ta=+2 o C, Zs=Zl=ohm
6 1--3 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =1.8V, Zs=Zl=Ω S11, S22 Zin, Zout VSWRi, VSWRo S21, S12 6
7 1--4 TYPICAL CHARACTERISTICS (LNA HIGH GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =1.8V, Zs=Zl=Ω S11, S22(f=MHz~2GHz) S21, S12(f=MHz~2GHz) 2 Gain k factor vs. frequency 1 k factor frequency (GHz) V DD =V INV =2.7V, V CTL =1.8V f RF =MHz~2GHz, Ta=+2 o C, Zs=Zl=ohm 7
8 1-- TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) 1 Gain Pout vs. Pin Gain Gain, IDD vs. Pin 2 P-1dB(OUT)=+2.6dBm Pout (dbm) Pout P-1dB(IN)=+1.2dBm V DD =V INV =2.7V, V CTL =V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm Gain (db) Gain P-1dB(IN)=+1.2dBm V DD =V INV =2.7V, V CTL =V f RF =24MHz, Ta=+2 o C, Zs=Zl=ohm IDD 1 1 IDD (ua) 2 Gain Pout, IM3 vs. Pin 1 Gain OIP3, IIP3 vs. Pin 2 OIP3=+12.9dBm Pout, IM3 (dbm) Pout OIP3 (dbm) OIP3 IIP IIP3 (dbm) -8 IM3 IIP3=+19.7dBm V DD =V INV =2.7V, V CTL =V f RF = MHz, Ta=+2 o C, Zs=Zl=ohm frequency (MHz) V DD =V INV =2.7V, V CTL =V f RF =23~26MHz, Offset=+1kHz Pin=-16dBm Ta=+2 o C, Zs=Zl=ohm 18 8
9 1--6 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) Gain NF, Gain vs. frequency Gain NF (db) NF Gain (db) (Exclude PCB, Connector Losses) frequency (MHz) V DD =V INV =2.7V, V CTL =V f RF =23~26MHz, Ta=+2 o C, Zs=Zl=ohm 9
10 1--7 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =V, Zs=Zl=Ω S11, S22 Zin, Zout VSWRi, VSWRo S21, S12 1
11 1--8 TYPICAL CHARACTERISTICS (LNA LOW GAIN MODE) : Ta=+2 o C, V DD =V INV =2.7V, V CTL =V, Zs=Zl=Ω S11, S22(f=MHz~2GHz) S21, S12(f=MHz~2GHz) 2 Gain k factor vs. frequency 1 k factor frequency (GHz) V DD =V INV =2.7V, V CTL =V f RF =MHz~2GHz, Ta=+2 o C, Zs=Zl=ohm 11
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More informationFeatures. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
More informationSKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier
DATA SHEET SKY67106-306LF: 1.5-3.0 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications CDMA, WCDMA, TD-SCDMA, WiMAX, and LTE cellular infrastructure systems Ultra low-noise, high
More informationProduct Specifications Approval Sheet
TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com
More informationFeatures. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain:
More information50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
More informationSKY LF: GHz High Linearity, Active Bias Low-Noise Amplifier
DATA SHEET SKY67102-396LF: 2.0-3.0 GHz High Linearity, Active Bias Low-Noise Amplifier Applications CDMA, WCDMA, TD-SCDMA, WiMAX, and LTE cellular infrastructure Ultra low-noise systems Features Ultra
More informationMGA High Gain, High Linearity, Very Low Noise Amplifier. Features. Specifications
MGA- High Gain, High Linearity, Very Low Noise Amplifier Data Sheet Description Avago Technologies MGA- is a two stage, easy-touse GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise with good input
More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More informationSKY LF: GHz Low Noise Amplifier
DATA SHEET SKY6548-36LF:.7-1.2 GHz Low Noise Amplifier Applications Wireless infrastructure: GSM, CDMA, WCDMA, ISM, and TD-SCDMA Ultra-low noise applications Features Ultra-low Noise Figure =.65 db @ 9
More informationMMA GHz 1W Traveling Wave Amplifier Data Sheet
Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication
More informationApplication Note 5460
MGA-89 High Linearity Amplifier with Low Operating Current for 9 MHz to. GHz Applications Application Note 6 Introduction The Avago MGA-89 is a high dynamic range amplifier designed for applications in
More information434MHz LNA for RKE Using the 2SC5245A Application Note
434MHz LNA for RKE Using the 2SC5245A Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s 2SC5245A which is used as a Low Noise Amplifier (LNA) for RKE (Remote
More informationData Sheet. MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function 3FYM. Description. Features.
MGA-T GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function Data Sheet Description Avago Technologies MGA-T is a LNA designed for GPS/ISM/Wimax applications in the (.9-.)GHz frequency
More informationGain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
More informationPRELIMINARY DATASHEET
PRELIMINARY DATASHEET 8-12 GHz 41dBm Power Amplifier DESCRIPTION The is a high performance dual line-up 3 stages GaAs Power Amplifier MMIC designed to operate in the X band. The has an output power of
More information10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
More informationMSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-23-192/MSW2T-231-192/MSW2T-232-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 5 MHz to 6 GHz Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2. db High Gain: 22 db
More informationEVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier. Pin Configuration/Functional Diagram/Typical Application Circuit MAX2659 BIAS
19-797; Rev 4; 8/11 EVALUATION KIT AVAILABLE GPS/GNSS Low-Noise Amplifier General Description The high-gain, low-noise amplifier (LNA) is designed for GPS, Galileo, and GLONASS applications. Designed in
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MGA-31589 0.5 W High Gain Driver Amplifier Data Sheet Description Avago Technologies MGA-31589 is a 0.5 W, high Gain, high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package.
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2.5 db Gain: 13 db P1dB
More informationFeatures. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
More informationData Sheet. MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function 31YM. Description. Features
MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function Data Sheet Description Avago Technologies MGA-231T6 is a low-noise amplifier (LNA) designed for GPS/ISM/Wimax applications in the
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