WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC

Transcription

1 NJG114UA2 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG114UA2 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial and satellite applications. To achieve wide dynamic range, the NJG114UA2 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG114UA2 helps improve receiver sensitivity through high gain and low noise figure. Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. In high gain mode, the NJG114UA2 achieves high gain and high IIP3 across the band. The ESD protection circuits are integrated into the MMIC. They achieve high ESD protection voltage. An ultra-small and ultra-thin package of EPFFP6-A2 is adopted. PACKAGE OUTLINE NJG114UA2 APPLICATION Terrestrial and Satellite applications from 9MHz to2mhz Digital TV, CATV, BS/CS and Set-top box LTE Router, modem and Base Station FEATURES Wide operating frequency range 9MHz~2MHz Low voltage operation 2.8V typ. External components count 3pcs. (capacitor: 2pcs, inductor: 1pc) Small package size EPFFP6-A2 (package size: 1.mmx1.mmx.37mm typ.) [High gain mode] Current consumption 2mA typ. High gain +.db typ. Low noise figure 1.dB typ. [Low gain mode] Low current consumption 11µA typ. Gain(Low loss) -1.dB typ. PIN CONFIGURATION (Top View) 1PIN INDEX RFIN 6 1 LNA circuit Bypass circuit Bias circuit GND VCTL Logic circuit 4 3 Pin Connection 1. GND 2. GND 3. RFOUT 4. VCTL. GND 6. RFIN GND GND 2 RFOU TRUTH TABLE H =V CTL(H) L =V CTL(L) V CTL LNA ON Bypass LNA mode H ON OFF High Gain mode L OFF ON Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver

2 NJG114UA2 ABSOLUTE MAXIMUM RATINGS T a =+2 C, Z s =Z l = ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Supply voltage V DD. V Control voltage V CTL. V Input power P IN V DD =2.8V + dbm Power dissipation P D 4-layer FR4 PCB with through-hole (11.x114.mm), T j = C 9 mw Operating temperature T opr -4~+8 C Storage temperature T stg -~+ C ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: V DD =2.8V, T a =+2 C, Z s =Z l = ohm PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD V Control voltage (High) V CTL(H) V Control voltage (Low) V CTL(L)... V Operating current1 I DD1 RF OFF, V CTL =1.8V ma Operating current2 I DD2 RF OFF, V CTL =V µa Control current I CTL RF OFF, V CTL =1.8V µa - 2 -

3 NJG114UA2 ELECTRICAL CHARACTERISTICS2 (High Gain mode) Conditions: freq=9~2mhz, V DD =2.8V, V CTL =1.8V, T a =+2 C, Z s =Z l = ohm PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain1 Noise figure1 Input power 1dB gain compression1 Gain1 NF1 Exclude PCB, connector losses*1 Exclude PCB, connector losses* db db P -1dB(IN) dbm Input 3rd order intercept point1 IIP3_1 f1=freq, f2=freq+1khz, P IN =-26dBm dbm 2nd order IMD1 IM2_1 f1=2mhz, f2=mhz, fmeas=7mhz, P IN 1=P IN 2=-dBm * db 3rd order IMD1 IM3_1 f1=6mhz, f2=6mhz, fmeas=7mhz, P IN 1=P IN 2=-dBm * db Isolation ISL S db RF IN VSWR1 VSWRi RF OUT VSWR1 VSWRo *1 Input & output PCB and connector losses:.37db(9mhz),.92db(62mhz),.274db(2mhz) *2 Input PCB and connector losses:.19db(9mhz),.46db(62mhz),.122db(2mhz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 2 7 frequency(mhz) 6/6 7 frequency(mhz) - 3 -

4 NJG114UA2 ELECTRICAL CHARACTERISTICS3 (Low Gain mode) Conditions: freq=9~2mhz, V DD =2.8V, V CTL =V, T a =+2 C, Z s =Z l = ohm PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain2 Input power at 1dB gain compression2 Input 3rd order intercept point2 2nd order IMD2 3rd order IMD2 Gain2 Exclude PCB, connector losses* db P -1dB(IN) dbm IIP3_2 IMD2_2 IMD3_2 f1=freq, f2=freq+1khz, P IN =-6dBm f1=2mhz, f2=mhz fmeas=7mhz, P IN 1=P IN 2=-8dBm *3 f1=6mhz, f2=6mhz fmeas=7mhz, P IN 1=P IN 2=-8dBm * dbm db db RF IN VSWR2 VSWRi RF OUT VSWR2 VSWRo *1 Input & output PCB and connector losses:.37db(9mhz),.92db(62mhz),.274db(2mhz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 2 7 frequency(mhz) 6/6 7 frequency(mhz) - 4 -

5 NJG114UA2 TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND 2 GND 3 RFOUT Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF output terminal. This terminal doubles as the drain terminal of the LNA. Please connect this terminal to the power supply(vdd) via inductor(l1). 4 VCTL Control voltage terminal. GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 6 RFIN RF input terminal. This IC integrates an input DC blocking capacitor. - -

6 NJG114UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: V DD =2.8V, V CTL =1.8V, Ta=2 C, Z s =Z l = ohm, with application circuit Pout vs. Pin (f=62mhz) 2 Gain, IDD vs. Pin (f=62mhz) 4 Pout (dbm) Pout Gain (db) 1 Gain IDD IDD (ma) P-1dB(IN)=-4.dBm P-1dB(IN)=-4.dBm Pin (dbm) Pin (dbm) 4 Pout, IM3 vs. Pin (f1=62mhz, f2=f1+1khz) 16 Gain, NF vs. frequency (f=~2mhz) 4. Pout, IM3 (dbm) Pout IM3 Gain (db) Gain NF NF (db) -8 IIP3=+7.1dBm Pin (dbm) 9. (Exclude PCB, Connector Losses) frequency (MHz) P-1dB(IN) vs. frequency (f=~2mhz) 3 OIP3, IIP3 vs. frequency (f1=~2mhz, f2=f1+1khz, Pin=-26dBm) P-1dB(IN) (dbm) - -1 P-1dB(IN) OIP3, IIP3 (dbm) OIP3 IIP frequency (MHz) frequency (MHz) - 6 -

7 NJG114UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: V CTL =1.8V, Ta=2 o C, Z s =Z l = ohm, with application circuit 16 Gain, NF vs. VDD (f=62mhz) 4. P-1dB(IN) vs. VDD (f=62mhz) Gain 3. Gain (db) NF NF (db) P-1dB(IN) (dbm) - -1 P-1dB(IN) 9. (Exclude PCB, Connector Losses) OIP3, IIP3 vs. VDD (f1=62mhz, f2=f1+1khz, Pin=-26dBm) 4 IM2 vs. VDD (f1=2mhz, f2=mhz, Pin=-dBm) 2 OIP3 3 OIP3, IIP3 (dbm) 2 1 IIP3 IM2 (db) IM IM3 vs. VDD (f1=6mhz, f2=6mhz, Pin=-dBm) 3. VSWR vs. VDD (f=62mhz) 2. VSWRi IM3 (db) 4 4 IM3 VSWR VSWRo

8 NJG114UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: V CTL =1.8V, Ta=2 o C, Z s =Z l = ohm, with application circuit ISL vs. VDD (f=62mhz) 3 IDD vs. VDD (RF OFF) - 2 ISL (db) ISL IDD (ma) 2 1 IDD

9 NJG114UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: V DD =2.8V, V CTL =1.8V, Z s =Z l = ohm, with application circuit 16 Gain, NF vs. Temperature (f=62mhz) 4. 1 P-1dB(IN) vs. Temperature (f=62mhz) Gain Gain (db) NF NF (db) P-1dB(IN) (dbm) - 9. (Exclude PCB, Connector Losses) OIP3, IIP3 vs. Temperature (f1=62mhz, f2=f1+1khz, Pin=-26dBm) 4 IM2 vs. Temperature (f1=2mhz, f2=mhz, Pin=-dBm) 2 OIP3 3 OIP3, IIP3 (dbm) 1 IIP3 IM2 (db) IM IM3 vs. Temperature (f1=6mhz, f2=6mhz, Pin=-dBm) 3. VSWR vs. Temperature (f=62mhz) 2. VSWRi IM3 (db) 4 IM3 VSWR VSWRo

10 NJG114UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: V DD =2.8V, V CTL =1.8V, Z s =Z l = ohm, with application circuit ISL vs. Temperature (f=62mhz) 2 IDD, ICTL vs. Temperature (RF OFF) 2 ISL (db) ISL IDD (ma) IDD 2 1 ICTL (µa) ICTL K factor vs. frequency (f=mhz~2ghz) -4 o C -2 o C o C +2 o C +6 o C +8 o C K factor frequency (GHz) - 1 -

11 NJG114UA2 ELECTRICAL CHARACTERISTICS (Hgih Gain mode) Conditions: V DD =2.8V, V CTL =1.8V, T a =2 o C, Z s =Z l = ohm, with application circuit

12 NJG114UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V DD =2.8V, V CTL =V, T a =2 o C, Z s =Z l = ohm, with application circuit 2 Pout vs. Pin (f=62mhz) Gain Gain, IDD vs. Pin (f=62mhz) Pout (dbm) -1 Pout Gain (db) IDD (ma) IDD -2 P-1dB(IN)=+16.dBm -4 P-1dB(IN)=+16.dBm Pin (dbm) Pin (dbm) 4 Pout, IM3 vs. Pin (f1=62mhz, f2=f1+1khz) Gain vs. frequency (f=~2mhz) Pout, IM3 (dbm) 2 Pout IM3 IIP3=+3.3dBm Pin (dbm) Gain (db) -2 Gain (Exclude PCB, Connector Losses) frequency (MHz) 2 P-1dB(IN) vs. frequency (f=~2mhz) 34 OIP3, IIP3 vs. frequency (f1=9~2mhz, f2=f1+1khz, Pin=-6dBm) 32 P-1dB(IN) (dbm) 2 1 P-1dB(IN) OIP3, IIP3 (dbm) IIP3 OIP frequency (MHz) frequency (MHz)

13 NJG114UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V CTL =V, T a =2 o C, Z s =Z l = ohm, with application circuit Gain vs. VDD (f=62mhz) 2 P-1dB(IN) vs. VDD (f=62mhz) Gain (db) Gain P-1dB(IN) (dbm) 1 P-1dB(IN) OIP3, IIP3 vs. VDD (f1=62mhz, f2=f1+1khz, Pin=-6dBm) 8 IM2 vs. VDD (f1=2mhz, f2=mhz, Pin=-8dBm) IIP3 8 3 OIP3, IIP3 (dbm) 2 2 OIP3 IM2 (dbm) IM IM3 vs. VDD (f1=6mhz, f2=6mhz, Pin=-8dBm) 2. VSWR vs. VDD (f=62mhz) IM3 (dbm) IM3 VSWR VSWRi VSWRo

14 NJG114UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V CTL =V, T a =2 o C, Z s =Z l = ohm, with application circuit 3 IDD vs. VDD (RF OFF) 2 IDD (µa) 2 1 IDD

15 NJG114UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V DD =2.8V, V CTL =V, Z s =Z l = ohm, with application circuit Gain vs. Temperature (f=62mhz) 2 P-1dB(IN) vs. Temperature (f=62mhz) Gain (db) Gain P-1dB(IN) (dbm) 2 1 P-1dB(IN) OIP3, IIP3 vs. Temperature (f1=62mhz, f2=f1+1khz, Pin=-6dBm) 8 IM2 vs. Temperature (f1=2mhz, f2=mhz, Pin=-8dBm) IIP3 7 OIP3, IIP3 (dbm) OIP3 IM2 (dbm) IM IM3 vs. Temperature (f1=6mhz, f2=6mhz,pin=-8dbm) 2. VSWR vs. Temperature (f=62mhz) IM3 (dbm) IM3 VSWR VSWRo VSWRi

16 NJG114UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V DD =2.8V, V CTL =V, Z s =Z l = ohm, with application circuit 2 IDD vs. Temperature (RF OFF) 2 K factor vs. frequency (f=mhz~2ghz) -4 o C +2 o C 2-2 o C o C +6 o C +8 o C IDD (µa) 1 IDD K factor frequency (GHz) 2 IDD vs. VCTL (RF OFF) 2 IDD (ma) 1-4 o C +2 o C -2 o C +6 o C o C +8 o C VCTL (V)

17 NJG114UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V DD =2.8V, V CTL =V, T a =2 o C, Z s =Z l = ohm, with application circuit

18 NJG114UA2 APPLICATION CIRCUIT (Top View) RFIN GND VCTL RF IN 6 Logic circuit 4 VCTL Bypass circuit LNA circuit 1PIN INDEX 1 Bias circuit 3 33pF C1 RF OUT GND GND 2 RFOUT 27nH L1 VDD C2 1pF TEST PCB LAYOUT (Top View) PARTS LIST RF IN 1pin Index C2 C1 L1 VCTL VDD RF OUT Parts ID. L1 C1, C2 Manufacturer TAIYO-YUDEN HK Series MURATA GRM3 Series PCB (FR-4): t=.2mm MICROSTRIP LINE WIDTH =.4mm (Z = ohm) PCB SIZE=14.mm x 14.mm PRECAUTIONS C1 is a coupling and DC blocking capacitor at the output, and C2 is a bypass capacitor. L1 is an RF choke. (DC feed inductor) In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. All external parts are placed as close as possible to the IC

19 NJG114UA2 MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent 8973A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 16 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (3.K) NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) * Noise source and NF analyzer Input (Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) In DUT out Input (Ω) Noise Source Drive Output * Noise source and DUT, DUT and NF analyzer are connected directly. Measurement Setup

20 NJG114UA2 PACKAGE OUTLINE (EPFFP6-A2) Unit :mm Substrate :FR-4 Terminal Treat :Au Molding Material :Epoxy Resin Weight :.8mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages