UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

Transcription

1 NJG9UA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG9UA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (7~77 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, the ESD protection circuit is integrated into the IC to achieve high ESD tolerance. An ultra-small and ultra-thin package of EPFFP6-A is adopted. PACKAGE OUTLINE NJG9UA APPLICATIONS Wide band application from 7MHz to 77MHz Mobile TV and Digital TV applications Mobile phone and tablet PC applications FEATURES Low voltage operation Low voltage control Package External matching parts [High gain mode] Low current consumption High gain Low noise figure High input IP [Low gain mode] Low current consumption Gain (Low loss) High input IP +.8V typ. +.8V typ. EPFFP6-A (Package size:.mm x.mm x.7mm typ.) pcs..ma typ..db typ..db typ. -.dbm typ. µa typ. -.db typ. +.dbm typ. PIN CONFIGURATION (Top PIN INDEX 6 RFIN GND GND VDD VCTL RFOUT Logic circuit Pin Connection. GND. VDD. RFOUT. VCTL. GND 6. RFIN TRUTH TABLE H =V CTL(H), L =V CTL(L) V CTL LNA ON Bypass LNA mode H ON OFF High Gain mode L OFF ON Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver

2 NJG9UA ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage V DD. V Control voltage V CTL. V Input power P IN V DD =.8V + dbm Power dissipation P D -layer FR PCB with through-hole (.x.mm), T j = C 9 mw Operating temperature T opr -~+9 C Storage temperature T stg -~+ C ELECTRICAL CHARACTERISTICS (DC CHARACTERISTICS) General conditions: V DD =.8V, T a =+ C, Z s =Z l = ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD V Control voltage (High) V CTL(H)..8.6 V Control voltage (Low) V CTL(L). V Operating current I DD RF OFF, V CTL =.8V -.. ma Operating current I DD RF OFF, V CTL =V - µa Control current I CTL RF OFF, V CTL =.8V - 6 µa - -

3 NJG9UA ELECTRICAL CHARACTERISTICS (High Gain mode) General conditions: V DD =.8V, V CTL =.8V, T a =+ C, Z s =Z l = ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating frequency f RF MHz Small signal gain Gain.. 7. db Noise figure Input power at db gain compression point Input rd order intercept point NF Exclude PCB & connector losses* -..7 db P -db(in) dbm IIP_ f=f RF, f=f RF +khz, P IN =-dbm dbm RF IN VSWR VSWRi RF OUT VSWR VSWRo ELECTRICAL CHARACTERISTICS (Low Gain mode) General conditions: V DD =.8V, V CTL =V, T a =+ C, Z s =Z l = ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating frequency f RF MHz Small signal gain Input power at db gain compression point Input rd order intercept point Gain Exclude PCB & connector losses* db P -db(in) dbm IIP_ f=f RF, f=f RF +khz, P IN =-8dBm dbm RF IN VSWR VSWRi RF OUT VSWR VSWRo * Input PCB and connector losses:.db(at 7MHz),.7dB(at 77MHz) * Input & output PCB and connector losses:.7db(at 7MHz),.8dB(at 77MHz) - -

4 NJG9UA TERMINAL INFORMATION No. SYMBOL DESCRIPTION GND VDD RFOUT Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. This terminal is a power supply terminal of LNA and the logic circuit. Inductor L as shown in the application circuit is a part of an external matching circuit, and also provide DC power to LNA. RF input terminal. Since this IC is integrated an input DC blocking capacitor. VCTL Control voltage supply terminal. GND 6 RFIN Ground terminal. These terminals should be connected to the ground plane as close as possible for excellent RF performance. RF input terminal. The RF signal is input through external matching circuit connected to this terminal. Since this IC is integrated an input DC blocking capacitor. - -

5 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T a =+ C, V DD =.8V, V CTL =.8V, Z s =Z l = ohm, with application circuit NJG9UA Pout vs. Pin (f=6mhz) Gain, IDD vs. Pin (f=6mhz) Gain Pout (dbm) Pout Gain (db) IDD IDD (ma) - P-dB(IN)=-.dBm Pin (dbm) P-dB(IN)=-.dBm Pin (dbm) Pout, IM vs. Pin (f=6mhz, f=f+khz) 9 Gain,NF vs.frequency (f=~9mhz) Pout, IM (dbm) Pout - IM - -6 IIP=-.dBm Pin (dbm) Gain (db) 8. 7 Gain 6.. NF. (NF:Exclude PCB,Connector Losses) freqency (MHz) NF (db) P-dB(IN) vs. frequency (f=~9mhz) OIP, IIP vs. frequency (f=~9mhz, f=f+khz, Pin=-dBm) P-dB(IN) (dbm) P-dB(IN) OIP, IIP (dbm) OIP - IIP frequency (MHz) frequency (MHz) - -

6 NJG9UA ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T a =+ C, V CTL =.8V, Z s =Z l = ohm, with application circuit 9 Gain, NF vs. VDD (f=6mhz) P-dB(IN) vs. VDD (f=6mhz) Gain (db) Gain NF.... NF (db) P-dB(IN) (dbm) OIP, IIP vs. VDD (f=6mhz) VSWR vs. VDD (f=6mhz) OIP, IIP (dbm) - OIP IIP VSWR.. VSWRi VSWRo IDD vs. VDD (RF off) 8 IDD (ma)

7 NJG9UA ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: V DD =.8V, V CTL =.8V, Z s =Z l = ohm, with application circuit 9 Gain, NF vs. Temperature (f=6mhz) P-dB(IN) vs. Temperature (f=6mhz) 8. Gain (db) 7 6 Gain NF.. NF (db) P-dB(IN) (dbm) P-dB(IN) OIP, IIP vs. Temperature (f=6mhz, f=f+khz, Pin=-dBm) VSWR vs. Temperature (f=6mhz) OIP, IIP (dbm) OIP VSWR.. VSWRo VSWRi - IIP IDD vs. Temperature (RF off) K factor vs. Temperature (f=mhz~ghz) 8 IDD (ma) 6 K factor -( o C) -( o C) ( o C) ( o C) 6( o C) 8( o C) 9( o C) Frequency (GHz) - 7 -

8 NJG9UA ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T a =+ C, V DD =.8V, V CTL =.8V, Z s =Z l = ohm, with application circuit S, S S, S VSWRi, VSWRo Zin, Zout S, S (MHz~GHz) S, S (MHz~GHz) - 8 -

9 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T a =+ C, V DD =.8V, V CTL =V, Z s =Z l = ohm, with application circuit NJG9UA Pout vs. Pin (f=6mhz) Gain, IDD vs. Pin (f=6mhz) - Gain 8 Pout (dbm) - Pout Gain (db) IDD (ma) - - P-dB(IN)=+.dBm - P-dB(IN)=+.dBm IDD Pin (dbm) Pin (dbm) Pout, IM vs. Pin (f=6mhz, f=f+khz) Gain vs. frequency (f=~9mhz) Pout, IM (dbm) Pout IM Gain(dB) Gain -8 IIP=+.dBm - (Gain:Exclude PCB,Connector Losses) Pin (dbm) frequency(mhz) P-dB(IN) vs. frequency (f=~9mhz) OIP, IIP vs. frequency (f=~9mhz, f=f+khz, Pin=-8dBm) P-dB(IN) (dbm) P-dB(IN) OIP, IIP (dbm) 8 6 IIP OIP frequency (MHz) frequency (MHz) - 9 -

10 NJG9UA ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T a =+ C, V CTL =V, Z s =Z l = ohm, with application circuit Gain vs. VDD (f=6mhz) P-dB(IN) vs. VDD (f=6mhz) Gain (db) P-dB(IN) (dbm) OIP, IIP vs. VDD (f=6mhz). VSWR vs. VDD (f=6mhz) OIP, IIP (dbm) 8 6 IIP OIP VSWR... VSWRi. VSWRo IDD vs. VDD (RF off) IDD (ua)

11 NJG9UA ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V DD =.8V, V CTL =V, Z s =Z l = ohm, with application circuit. Gain vs. Temperature (f=6mhz) P-dB(IN) vs. Temperature (f=6mhz) Gain (db) P-dB(IN) (dbm) P-dB(IN) OIP, IIP vs. Temperature (f=6mhz, f=f+khz, Pin=-8dBm). VSWR vs. Temperature (f=6mhz) OIP, IIP (dbm) 8 IIP OIP VSWR... VSWRin 6. VSWRout

12 NJG9UA ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: V DD =.8V, V CTL =V, Z s =Z l = ohm, with application circuit IDD vs. Temperature (RF off) K factor vs. Temperature (f=mhz~ghz) -( o C) -( o C) 8 ( o C) ( o C) 6( o C) IDD (ua) 6 K factor 8( o C) 9( o C) Frequency (GHz) IDD vs. VCTL (RF off) IDD (ma) - ( o C) - ( o C) ( o C) ( o C) 6 ( o C) 8 ( o C) 9 ( o C).. VCTL (V) - -

13 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T a =+ C, V DD =.8V, V CTL =V, Z s =Z l = ohm, with application circuit NJG9UA S, S S, S VSWRi, VSWRo Zin, Zout S, S (MHz~GHz) S, S (MHz~GHz) - -

14 NJG9UA APPLICATION CIRCUIT (Top View) RF IN L 8nH 6 RFIN GND VCTL V CTL Logic circuit PIN INDEX GND VDD RFOUT RF OUT L 7nH C pf TEST PCB LAYOUT V DD (Top View) Parts List V CTL Parts ID L, L C Notes MURATA LQPT series MURATA GRM series RF IN PIN INDEX L C L V DD RF OUT PCB (FR-): t=.mm MICROSTRIP LINE WIDTH =.mm (Z = ohm) PCB SIZE=.mm.mm * Please place all external parts around the IC as close as possible. - -

15 NJG9UA PACKAGE OUTLINE (EPFFP6-A) Unit : mm Substrate : FR Terminal treat : Au Molding material : Epoxy resin Weight (typ.) :.8mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - -