2-way Active Splitter GaAs MMIC

Transcription

1 NJG111MD7 -way Active Splitter GaAs MMIC GENERAL DESCRIPTION The NJG111MD7 is -way active splitter with normally loop through switch GaAs MMIC for terrestrial applications, and this IC can be tuned to satellite frequency from 1MHz to 1MHz. In order to simplify the tuner structure, the NJG111MD7 does not only offer a -way active splitter, but also supply loop through switch for optimize the complicate circuit. The NJG111MD7 achieve better characteristics and high ESD tolerance with less external components. A small and ultra-thin package of EQFN1-D7 is adopted. PACKAGE OUTLINE NJG111MD7 APPLICATIONS STB, TV, Recorder applications Terrestrial application Satellite application Note: Please check the Application Note for Satellite. FEATURES Operating frequency to 1MHz Package EQFN1-D7 (Package size: 1.x1.x.397mm typ.) [ Active mode: Operating voltage.v ] Operating current 1mA typ. Gain.dB typ. (Zs=Zl= ohm, Zs=Zl=7 ohm) Noise figure.db typ. (Zs=Zl= ohm) CSO dbc typ. (Zs=Zl=7 ohm, 13ch, +1dBmV) CTB dbc typ. (Zs=Zl=7 ohm, 13ch, +1dBmV) Output to output isolation db typ. (Zs=Zl= ohm, Zs=Zl=7 ohm) [ Through mode: Operating voltage V ] Insertion loss.db typ. (Zs=Zl= ohm) PIN CONFIGURATION 1pin INDEX 1 SWOUT1 3 SWIN1 LNAIN 1 (Top View) 13 LNAOUT SPLIN 7 SWOUT SWIN splitter SPLOUT 9 SPLOUT1 Pin Connection 1... SWOUT1 9. SPLOUT1 3. SWIN1 1. SPIN SWOUT 1. LNAOUT. SWIN SPLOUT 1. LNAIN Exposed Pad: Note: Specifications and description listed in this datasheet are subject to change without notice. Ver

2 NJG111MD7 ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = ohm / 7 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage V DD. V Input power P IN V DD =.V +1 dbm Power dissipation P D -layer FR PCB with through-hole (7.x11.3mm), T j =1 C 13 mw Operating temperature T opr -~+ C Storage temperature T stg -~+1 C ELECTRICAL CHARACTERISTICS (DC CHARACTERISTICS) V DD =.V, T a =+ C, with application circuit1 PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD... V Operating current I DD RF OFF ma

3 NJG111MD7 ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS: Active mode, ohm) V DD =.V, freq= to 1MHz, T a =+ C, Z S =Z l =ohm, with application circuit1 PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain1_1 Small signal gain1_ Gain Flatness1_1 Gain Flatness1_ Noise figure1 Input power 1dB compression1 Input 3rd order intercept point1 nd order intermodulation distortion1 3rd order intermodulation distortion1 Reverse Isolation1 Output to Output Isolation1 Gain1_1 Gain1_ Gflat1_1 Gflat1_ NF1 Exclude PCB & connector losses (Note1) freq= to 9MHz Exclude PCB & connector losses (Note1) freq= to 1MHz Exclude PCB & connector losses (Note1) freq= to 9MHz Exclude PCB & connector losses (Note1) freq= to 1MHz Exclude PCB & connector losses (Note)... db.. 9. db db db db P-1dB(IN) dbm IIP3_1 IM_1 IM3_1 ISL1 f1=freq, f=freq+1khz, P IN =-1dBm f1=.7mhz, f=13.mhz, fmeas=mhz, P IN 1=P IN =-dbm f1=93.mhz, f=73.mhz, fmeas=3.mhz, P IN 1=P IN =-dbm RF OUT1 to RF IN RF OUT to RF IN dbm db db.. - db OISL1 RF OUT1 to RF OUT db RF IN Return loss1 RLi1 RF IN port db RF OUT Return loss1 RLo1 RF OUT1, RF OUT port db (Note1) Input and output PCB, connector losses (RFIN-RFOUT1):.dB(MHz),.1dB(1MHz) Input and output PCB, connector losses (RFIN-RFOUT):.dB(MHz),.1dB(1MHz) (Note) Input PCB and connector losses:.1db(mhz),.db(1mhz) 3

4 NJG111MD7 ELECTRICAL CHARACTERISTICS3 (RF CHARACTERISTICS: Through mode, ohm) V DD =V, freq= to 1MHz, T a =+ C, Z S =Z l =ohm, with application circuit1 PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion Loss Input power 1dB Compression nd order intermodulation distortion 3rd order intermodulation distortion Loss Exclude PCB & connector losses (Note1) -.. db P-1dB(IN) dbm IM_ IM3_ f1=9mhz, f=1mhz, fmeas=19mhz, P IN 1=P IN =-dbm f1=mhz, f=1mhz, fmeas=mhz, P IN 1=P IN =-dbm.. - db db RF IN Return loss RLi RF IN port db RF OUT Return loss RLo RF OUT port db (Note1) Input and output PCB, connector losses (RFIN-RFOUT):.dB(MHz),.1dB(1MHz)

5 NJG111MD7 ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS: Active mode, 7 ohm) V DD =.V, freq= to 1MHz, T a =+ C, Z S =Z l =7 ohm, with application circuit1 PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Small signal gain3 (7 ohm) Composite Second Order3 Composite Triple Beat 3 Reverse Isolation3 Output to Output Isolation3 RF IN Return loss3 (7 ohm) RF OUT Return loss3 (7 ohm) Gain3 CSO3 CTB3 ISL3 Exclude PCB & connector losses 13channels, CW, P IN =+1dBmV 13channels, CW, P IN =+1dBmV RF OUT1 to RF IN RF OUT to RF IN -. - db -. - dbc -. - dbc. db OISL3 RF OUT1 to RF OUT. db RLi3 RF IN port db RLo3 RF OUT1, RF OUT port -. - db ELECTRICAL CHARACTERISTICS (RF CHARACTERISTICS: Through mode, 7 ohm) V DD =V, freq= to 1MHz, T a =+ C, Z S =Z l =7 ohm, with application circuit1 PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Insertion Loss (7 ohm) Composite Second Order Composite Triple Beat RF IN Return loss (7 ohm) RF OUT Return loss (7 ohm) Loss CSO CTB Exclude PCB & connector losses 13channels, CW, P IN =+1dBmV 13channels, CW, P IN =+1dBmV db -. - dbc -. - dbc RLi RF IN port db RLo RF OUT1, RF OUT port db

6 NJG111MD7 TERMINAL DESCRIPTION Pin No. SYMBOL DESCRIPTION 1 SWOUT1 3 SWIN1 SWOUT SWIN Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF signal output terminal of the switch. RF signal is output through the external circuit. Please connect the DC blocking capacitor of the application circuit. RF signal input terminal of the switch. RF signal is input through the external circuit. Please connect the DC blocking capacitor of the application circuit. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF signal output terminal of the switch. RF signal is output through the external circuit. Please connect the DC blocking capacitor of the application circuit. RF signal input terminal of the switch. RF signal is input through the external circuit. Please connect the DC blocking capacitor of the application circuit. 7 SPLOUT RF signal output terminal of the splitter. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 9 SPLOUT1 RF signal output terminal of the splitter. 1 SPLIN RF signal input terminal of the splitter LNAOUT 13 1 LNAIN Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF signal output terminal of the LNA. RF signal is output through the external circuit. This terminal is also a voltage supply terminal of the switch and LNA, Please supply the voltage through an inductor of the application circuit. Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. RF signal input terminal of the LNA. RF signal is input through the external circuit. This terminal is also a current adjustment terminal of the LNA, Please connect to ground via a resistor of the application circuit. Exposed Pad Ground terminal.

7 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Ta= C, Z s =Z l = ohm, with application circuit1 1 Gain, NF vs. frequency (freq=~1mhz, RF IN to RF OUT1) 1 Gain, NF vs. frequency (freq=~1mhz, RF IN to RF OUT) Gain 7 Gain 7 Gain (db) NF (db) Gain (db) NF (db) 3 NF - (Exclude PCB, Connector Losses) NF - (Exclude PCB, Connector Losses) Pout vs. Pin (freq=mhz, RF IN to RF OUT1) Pout vs. Pin (freq=mhz, RF IN to RF OUT) 1 1 Pout (dbm) -1 Pout Pout (dbm) -1 Pout - - P-1dB(IN)=+.dBm Pin (dbm) P-1dB(IN)=+.dBm Pin (dbm) Gain, IDD vs. Pin (freq=mhz, RF IN to RF OUT1) 1 Gain, IDD vs. Pin (freq=mhz, RF IN to RF OUT) 1 Gain 1 Gain 1 Gain (db) IDD 1 1 IDD (ma) Gain (db) IDD 1 1 IDD (ma) P-1dB(IN)=+.dBm Pin (dbm) P-1dB(IN)=+.dBm Pin (dbm) 7

8 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Ta= C, Z s =Z l = ohm, with application circuit1 1 P-1dB(IN) vs. frequency (freq=~1mhz, RF IN to RF OUT1) 1 P-1dB(IN) vs. frequency (freq=~1mhz, RF IN to RF OUT) P-1dB(IN) (dbm) 1 P-1dB(IN) (dbm) Pout, IM3 vs. Pin (f1=mhz, f=f1+1khz, RF IN to RF OUT1) OIP3=+.1dBm Pout, IM3 vs. Pin (f1=mhz, f=f1+1khz, RF IN to RF OUT) OIP3=+.dBm Pout, IM3 (dbm) - - Pout IM3 Pout, IM3 (dbm) - - Pout IM3 - - IIP3=+.dBm Pin (dbm) IIP3=+.7dBm Pin (dbm) IIP3, OIP3 vs. frequency (f1=~1mhz, f=f1+1khz, Pin=-1dBm, RF IN to RF OUT1) 3 IIP3, OIP3 vs. frequency (f1=~1mhz, f=f1+1khz, Pin=-1dBm, RF IN to RF OUT) 3 OIP3 OIP3 IIP3, OIP3 (dbm) 1 IIP3 IIP3, OIP3 (dbm) 1 IIP

9 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Ta= C, Z s =Z l = ohm, with application circuit1 RF IN Return Loss vs. frequency (freq=~1mhz) RF OUT Return Loss vs. frequency (freq=~1mhz) 1 1 RLi (db) 1 3 RLo (db) 1 3 RF OUT RF OUT Reverse Isolation vs. frequency (freq=~1mhz) Output to Output Isolation vs. frequency (freq=~1mhz) 1 ISL (db) 1 RF OUT1 to RF IN OISL (db) 1 RF OUT1 to RF OUT 3 3 RF OUT to RF OUT1 3 RF OUT to RF IN Reverse Isolation vs. frequency (freq=~1mhz) Output to Output Isolation vs. frequency (freq=~1mhz) 1 ISL (db) 1 RF OUT1 to RF IN OISL (db) 1 RF OUT1 to RF OUT 3 3 RF OUT to RF OUT1 3 RF OUT to RF IN

10 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Ta= C, Z s =Z l = ohm, with application circuit1 S11, S (RF OUT1) S11, S (RF OUT) S1, S1 (RF OUT1) S1, S1 (RF OUT) Zin, Zout (RF OUT1) Zin, Zout (RF OUT) 1

11 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Ta= C, Z s =Z l = ohm, with application circuit1 VSWRi, VSWRo (RF OUT1) VSWRi, VSWRo (RF OUT) S11, S (MHz~GHz, RF OUT1) S11, S (MHz~GHz, RF OUT) S1, S1 (MHz~GHz, RF OUT1) S1, S1 (MHz~GHz, RF OUT) 11

12 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: Ta= C, Z s =Z l = ohm, with application circuit1 1 Gain vs. VDD (freq=mhz) NF vs. VDD (freq=mhz) RF IN to RF OUT1 Gain (db) RF IN to RF OUT NF (db) 3 RF IN to RF OUT1 - (Exclude PCB, connector Losses) RF IN to RF OUT (Exclude PCB, connector Losses) P-1dB(IN) vs. VDD (freq=mhz) 3 IIP3 vs. VDD (f1=mhz, f=.1mhz, Pin=-1dBm) RF IN to RF OUT P-1dB(IN) (dbm) RF IN to RF OUT1 IIP3 (dbm) 1 RF IN to RF OUT1 RF IN to RF OUT IM vs. VDD (f1=.7mhz, f=13.mhz, fmeas=mhz, Pin=-dBm) IM3 vs. VDD (f1=93.mhz, f=73.mhz, fmeas=3.mhz, Pin=-dBm) 7 IM (db) 3 RF IN to RF OUT RF IN to RF OUT1 IM3 (db) RF IN to RF OUT RF IN to RF OUT

13 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: Ta= C, Z s =Z l = ohm, with application circuit1 RF IN Return Loss vs. VDD (freq=mhz) RF OUT Return Loss vs. VDD (freq=mhz) 1 1 RLi (db) 3 RLo (db) 3 RF OUT1 RF OUT Reverse Isolation vs. VDD (freq=mhz) Output to Output Isolation vs. VDD (freq=mhz) 1 1 ISL (db) 3 RF OUT1 to RF IN OISL (db) 3 RF OUT1 to RF OUT RF OUT to RF OUT1 RF OUT to RF IN IDD vs. VDD (RF OFF) 1 IDD (ma)

14 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: Ta= C, Z s =Z l = ohm, with application circuit1 K factor vs. frequency (freq=mhz~ghz, RF IN to RF OUT1) K factor vs. frequency (freq=mhz~ghz, RF IN to RF OUT) 1 1 K factor 1 K factor 1 VDD=.V VDD=.V VDD=.V VDD=.V VDD=.V VDD=.V frequency (GHz) frequency (GHz) 1

15 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Z s =Z l = ohm, with application circuit1 1 Gain vs. Temperature (freq=mhz) NF vs. Temperature (freq=mhz) RF IN to RF OUT1 Gain (db) RF IN to RF OUT NF (db) 3 RF IN to RF OUT RF IN to RF OUT1 - (Exclude PCB, connector Losses) (Exclude PCB, connector Losses) P-1dB(IN) vs. Temperature (freq=mhz) RF IN to RF OUT 3 IIP3 vs. Temperature (f1=mhz, f=.1mhz, Pin=-1dBm) P-1dB(IN) (dbm) RF IN to RF OUT1 IIP3 (dbm) 1 RF IN to RF OUT RF IN to RF OUT IM vs. Temperature (f1=.7mhz, f=13.mhz, fmeas=mhz, Pin=-dBm) IM3 vs. Temperature (f1=93.mhz, f=73.mhz, fmeas=3.mhz, Pin=-dBm) 7 RF IN to RF OUT1 RF IN to RF OUT IM (db) 3 RF IN to RF OUT IM3 (db) RF IN to RF OUT

16 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Z s =Z l = ohm, with application circuit1 RF IN Return Loss vs. Temperature (freq=mhz) RF OUT Return Loss vs. Temperature (freq=mhz) 1 1 RLi (db) 3 RLo (db) 3 RF OUT RF OUT Reverse Isolation vs. Temperature (freq=mhz) Output to Output Isolation vs. Temperature (freq=mhz) 1 1 ISL (db) 3 RF OUT1 to RF IN OISL (db) 3 RF OUT1 to RF OUT RF OUT to RF OUT1 RF OUT to RF IN IDD vs. Temperature (RF OFF) 1 IDD (ma)

17 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, ohm) Conditions: V DD =.V, Z s =Z l = ohm, with application circuit1 K factor vs. frequency (freq=mhz~ghz, RF IN to RF OUT1) K factor vs. frequency (freq=mhz~ghz, RF IN to RF OUT) 1 1 K factor 1 K factor 1 - o C + o C + o C - o C + o C + o C frequency (GHz) frequency (GHz) 17

18 NJG111MD7 ELECTRICAL CHARACTERISTICS (Through mode, ohm) Conditions: V DD =V, Ta= C, Z s =Z l = ohm, with application circuit1 Insertion Loss vs. frequency (freq=~1mhz,rf IN to RF OUT) Pout vs. Pin (freq=mhz, RF IN to RF OUT) 1 1 Loss (db) 3 Pout (dbm) -1 Pout - (Exclude PCB, connector Losses) 1 1 P-1dB(IN)=+1.dBm Pin (dbm) Loss vs. Pin (freq=mhz, RF IN to RF OUT) P-1dB(IN) vs. frequency (freq=~1mhz, RF IN to RF OUT) Loss Loss (db) P-1dB(IN) (dbm) 1 1 P-1dB(IN)=+1.dBm Pin (dbm) 1 RF IN Return Loss vs. frequency (freq=~1mhz) RF OUT Return Loss vs. frequency (freq=~1mhz) 1 1 RLi (db) 1 RLo (db)

19 NJG111MD7 ELECTRICAL CHARACTERISTICS (Through mode, ohm) Conditions: V DD =V, Ta= C, Z s =Z l = ohm, with application circuit1 S11, S S1, S1 Zin, Zout VSWRi, VSWRo S11, S (MHz~GHz) S1, S1 (MHz~GHz) 19

20 NJG111MD7 ELECTRICAL CHARACTERISTICS (Through mode, ohm) Conditions: V DD =V, Z s =Z l = ohm, with application circuit1 Insertion Loss vs. Temperature (freq=mhz) P-1dB(IN) vs. Temperature (freq=mhz) Loss (db) 1 3 P-1dB(IN) (dbm) IM (db) 7 7 IM vs. Temperature (f1=9mhz, f=1mhz, fmeas=19mhz, Pin=-dBm) IM3 (db) IM3 vs. Temperature (f1=mhz, f=1mhz, fmeas=mhz, Pin=-dBm) RF IN Return Loss vs. Temperature (freq=mhz) RF OUT Return Loss vs. Temperature (freq=mhz) 1 1 RLi (db) 3 RLo (db)

21 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, 7 ohm) Conditions: V DD =.V, Ta= C, Z s =Z l =7 ohm, with application circuit1 1 Gain vs. frequency (freq=~1mhz, RF IN to RF OUT1, Zs=Zl=7ohm) 1 Gain vs. frequency (freq=~1mhz, RF IN to RF OUT, Zs=Zl=7ohm) Gain (db) Gain (db) - - (Exclude PCB, connector Losses) (Exclude PCB, connector Losses) RF IN Return Loss vs. frequency (freq=~1mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. frequency (freq=~1mhz, Zs=Zl=7ohm) RLi (db) 1 1 RLo (db) 1 1 RF OUT1 RF OUT Reverse Isolation vs. frequency (freq=~1mhz, Zs=Zl=7ohm) Output to Output Isolation vs. frequency (freq=~1mhz, Zs=Zl=7ohm) 1 ISL (db) 1 RF OUT1 to RF IN OISL (db) 1 RF OUT1 to RF OUT 3 3 RF OUT to RF OUT1 3 RF OUT to RF IN

22 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, 7 ohm) Conditions: Ta= C, Z s =Z l =7 ohm, with application circuit1 1 Gain vs. VDD (freq=mhz, Zs=Zl=7ohm) RF IN to RF OUT1 Gain (db) RF IN to RF OUT - (Exclude PCB, connector Losses) RF IN Return Loss vs. VDD (freq=mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. VDD (freq=mhz, Zs=Zl=7ohm) 1 1 RF OUT RLi (db) 3 RLo (db) 3 RF OUT Reverse Isolation vs. VDD (freq=mhz, Zs=Zl=7ohm) Output to Output Isolation vs. VDD (freq=mhz, Zs=Zl=7ohm) 1 1 ISL (db) 3 RF OUT1 to RF IN OISL (db) 3 RF OUT1 to RF OUT RF OUT to RF OUT1 RF OUT to RF IN

23 NJG111MD7 ELECTRICAL CHARACTERISTICS (Active mode, 7 ohm) Conditions: V DD =.V, Z s =Z l =7 ohm, with application circuit1 1 Gain vs. Temperature (freq=mhz, Zs=Zl=7ohm) Gain (db) RF IN to RF OUT1 RF IN to RF OUT - (Exclude PCB, connector Losses) RF IN Return Loss vs. Temperature (freq=mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. Temperature (freq=mhz, Zs=Zl=7ohm) 1 1 RF OUT RLi (db) 3 RLo (db) 3 RF OUT Reverse Isolation vs. Temperature (freq=mhz, Zs=Zl=7ohm) Output to Output Isolation vs. Temperature (freq=mhz, Zs=Zl=7ohm) 1 1 ISL (db) 3 RF OUT1 to RF IN OISL (db) 3 RF OUT1 to RF OUT RF OUT to RF OUT1 RF OUT to RF IN

24 NJG111MD7 ELECTRICAL CHARACTERISTICS (Through mode, 7 ohm) Conditions: V DD =V, Ta= C, Z s =Z l =7 ohm, with application circuit1 Insertion Loss vs. frequency (freq=~1mhz,rf IN to RF OUT, Zs=Zl=7ohm) RF IN Return Loss vs. frequency (freq=~1mhz, Zs=Zl=7ohm) 1 1 Loss (db) 3 RLi (db) 1 (Exclude PCB, connector Losses) RF OUT Return Loss vs. frequency (freq=~1mhz, Zs=Zl=7ohm) Insertion Loss vs. Temperature (freq=mhz, Zs=Zl=7ohm) 1 1 RLo (db) 1 Loss (db) RF IN Return Loss vs. Temperature (freq=mhz, Zs=Zl=7ohm) RF OUT Return Loss vs. Temperature (freq=mhz, Zs=Zl=7ohm) 1 1 RLi (db) 3 RLo (db)

25 NJG111MD7 APPLICATION CIRCUIT1: with through SW (Top View) V DD C.1u L 1n C3.1u R3 1k L1 7n C.1u C 1.p R k R1 7 L 7n C.1u L3.n 1Pin INDEX 1 1 LNAIN 13 1 LNAOUT 11 1 SW OUT1 SPLIN RF IN C1.1u 3 SW IN1 splitter 9 SPLOUT1 RF OUT1 7 SW OUT SW IN SPLOUT C7.1u C.1u RF OUT Parts List Parts ID Manufacture L1 TAIYO-YUDEN HK1 Series L~L TAIYO-YUDEN HK1 Series C1~C MURATA GRM1 Series R1, R3, R KOA RK73 Series FUNCTION STATE TABLE1 Application circuit1: with through SW V DD LNA Loop through SW RF IN to RF OUT1 RF IN to RF OUT V OFF ON.V ON OFF Isolate mode (-db) Active mode (db) Through mode (-.db) Active mode (.db)

26 NJG111MD7 TEST PCB LAYOUT (Top View) RF OUT1 V DD C3 R3 R1 L R L L3 C C RF IN C1 C7 C 1Pin INDEX C C L1 RF OUT PCB: FR-, t=.mm Microstrip line width:.mm PCB size: 1.7mm x 19.1mm PRECAUTIONS - C1~C, C and C7 are DC-Blocking capacitors, and C is a bypass capacitor. - L1 is RF choke inductor. (DC feed inductor) - R is the resistance to adjust the operating current. - L~L, R1, R3 and C are negative feedback circuit and impedance matching. - All external parts, please be placed as close to the IC. - The backside exposed pad, because it is used to heat dissipation, please grounded via a through-hole near the IC.

27 NJG111MD7 RECOMMENDED FOOTPRINT PATTERN (EQFN1-D7 PACKAGE Reference) : Land : Mask (Open area) *Metal mask thickness: 1um PKG: 1.mm x 1.mm Pin pitch:.mm : Resist (Open area) Detail A 7

28 NJG111MD7 APPLICATION CIRCUIT: without through SW (Top View) V DD C.1u L 1n C3.1u R3 1k L1 7n C.1u C 1.p R k R1 7 L 7n C.1u L3.n 1Pin INDEX 1 1 LNAIN 13 1 LNAOUT 11 1 SW OUT1 SPLIN RF IN C1.1u 3 SW IN1 splitter 9 SPLOUT1 RF OUT1 7 SW OUT SW IN SPLOUT Don t connect (open) RF OUT Parts List Parts ID Manufacture L1 TAIYO-YUDEN HK1 Series L~L TAIYO-YUDEN HK1 Series C1~C, C MURATA GRM1 Series R1, R3, R KOA RK73 Series FUNCTION STATE TABLE Application circuit: without through SW V DD LNA RF IN to RF OUT1 RF IN to RF OUT V OFF.V ON Isolate mode (-db) Active mode (db) Isolate mode (-db) Active mode (db)

29 NJG111MD7 MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent 973A Noise Source : Agilent 3A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : Average mode : Point Bandwidth : MHz Loss comp : off Tcold : setting the temperature of noise source (33K) NF Analyzer (Agilent 973A) Noise Source (Agilent 3A) Preamplifier NJG11UA Gain=1dB, NF=1.dB Input ( ohm) Noise Source Drive Output * Noise sauce, the preamplifier, and NF analyzer are connected directly. Calibration Setup NF Analyzer (Agilent 973A) Noise Source (Agilent 3A) Preamplifier NJG11UA Gain=1dB, NF=1.dB * Noise sauce, DUT, IN DUT OUT Input ( ohm) Noise Source Drive Output the preamplifier, and NF analyzer are connected directly. Measurement Setup 9

30 NJG111MD7 PACKAGE OUTLINE (EQFN1-D7) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. CAUTION] he specifications on this databook are only iven for information, without any guarantee s regards either mistakes or omissions. he application circuits in this databook are escribed only to show representative usages f the product and not intended for the uarantee or permission of any right ncluding the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. 3