ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

Transcription

1 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE34 FEATURES VERY LOW NOISE FIGURE: NF =.6 db typical at f = GHz HIGH ASSOCIATED GAIN: GA =. db typical at f = GHz LG =.5 µm, WG = µm DESCRIPTION The NE34 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for consumer and industrial applications. Noise Figure, NF (db) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = V, IDS = ma GA NF 3 Frequency, f (GHz) Associated Gain, GA (db) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE34 PACKAGE OUTLINE (CHIP) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT Optimum Noise Figure at VDS = V, IDS = ma f = 4 GHz db.35 f = GHz db.6.7 GA Associated Gain at VDS = V, IDS = ma f = 4 GHz db 6. f = GHz db.. PdB Output Power at db Gain Compression Point, f = GHz VDS = V, IDS = ma dbm 9.5 VDS = V, IDS = ma dbm. GdB Gain at PdB, f = GHz VDS = V, IDS = ma db.8 VDS = V, IDS = ma db.8 IDSS Saturated Drain Current at VDS = V, VGS = V ma VP Pinch-Off Voltage at VDS = V, IDS = µa V gm Transconductance at VDS = V, IDS = ma ms 45 6 IGSO Gate to Source Leakage Current at VGS = -3 V µa.5 RTH (CH-C) Thermal Resistance (Channel-to-Case) C/W 6. RF performance is determined by packaging and testing samples per wafer. Wafer rejection criteria for standard devices is rejects for samples.. Chip mounted on infinite heat sink. California Eastern Laboratories

2 NE34 ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4. VGSO Gate to Source Voltage V -3. IDS Drain Current ma IDSS IGRF Gate Current µa TCH Channel Temperature C 75 TSTG Storage Temperature C -65 to +75 PT Total Power Dissipation mw. Operation in excess of any one of these parameters may result in permanent damage.. With chip mounted on an alumina heat sink (size: 3 x 3 x.6 mm thick) TYPICAL PERFORMANCE CURVES (TA = 5 C) 5 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TYPICAL NOISE PARAMETERS, (TA = 5 C) VDS = V, IDS = ma FREQ. NFOPT GA ΓOPT (GHz) (db) (db) MAG ANG Rn/ Power Dissipation, PT (mw) 5 5 Infinite Heat sink. Noise Parameters include Bond Wires. Gate: Total wires, per bond pad.3" (335 µm) long each wire. Drain: Total wires, per bond pad.94" (4 µm) long each wire. Source: Total 4 wires, per side,.7" (78 µm) long each wire. Wire:.7" (7.8 µm) dia. gold.. Data at 8 and 3 GHz is extrapolated, not measured Ambient Temperature, TA ( C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = V, f = GHz VGS. V -.5 V -.3 V -.45 V Noise Figure, NF (db) NF GA Associated Gain, GA (db) -.6 V Drain to Source Voltage, VDS (V)

3 NE34 TYPICAL PERFORMANCE CURVES (TA = 5 C) OUTLINE DIMENSIONS (Units in µm) TRANSCONDUCTANCE vs. DRAIN CURRENT VDS =. V 4 ±4 NE34 CHIP Transconductance, gm (ms) D S G G S D ± Chip Thickness: 4 µm Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER IDSS Range (ma) NE ma NE34N 5-45 ma NE34M 45-7 ma

4 NE34 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 5 C) j5 j5 j j S 3 GHz S 3 GHz S S S S S S 3 GHz 3 GHz -j -j5 -j5 -j Coordinates in Ohms Frequency in GHz (VDS = V, IDS = ma) VDS = V, IDS = ma FREQUENCY S S S S K S MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) S Parameters include Bond Wires. Gate: Total wire(s), per bond pad.3" (335 µm) long each wire. Drain: Total wire(s), per bond pad.94" (4 µm) long each wire. Source: Total 4 wire(s), per side,.7" (78 µm) long each wire. Wire:.7" (7.8 µm) dia. gold.. Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain

5 NE34 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 5 C) VDS = V, IDS = ma FREQUENCY S S S S K S MAG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) S Parameters include Bond Wires. Gate: Total wire(s), per bond pad.3" (335 µm) long each wire. Drain: Total wire(s), per bond pad.94" (4 µm) long each wire. Source: Total 4 wire(s), per side,.7" (78 µm) long each wire. Wire:.7" (7.8 µm) dia. gold.. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA (48) Telex FAX (48) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -8/98