DISCONTINUED V NE C TO X BAND N-CHANNEL GaAs MESFET. California Eastern Laboratories. PACKAGE DIMENSIONS (Units in mm) DESCRIPTION
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1 FEATURES PART NUMBER PACKAGE OUTLINE 18 SYMBO PARAMETERS AND CONDITIONS MIN TYP MAX Gs Power Gain at VDS = 3 V, ID = 30 ma, f = 12 GHz db 5.0 P1dB C TO X BAND N-CHANNEL GaAs MESFET HIGH POWER GAIN: Gs = 5.0 db TYP at f = 12 GHz LOW PHASE NOISE: -110 dbc/hz TYP at 100 KHz offset at f = 11 GHz LENGTH: = 0.8 µm (recessed gate) WIDTH: WG = 400 µm 4 PIN SUPER MINI MO: (SOT-343) TAPE & REEL PACKAGING DESCRIPTION The is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance, reliability and uniformity. The is housed in a 4 pin super mini mold package, making it ideal for high density design. NEC's stringent quality assurance and test procedures ensure the highest reliability performance. ELECTRICAL CHARACTERISTICS (TA = 25 C) Output Power at 1 db Gain Compression Point at VDS = 3 V, ID = 30 ma, f = 12 GHz dbm 15.0 PN Phase Noise at VDS = 3 V, ID = 30 ma, f = 11 GHz, 100 KHz offset dbc/hz -110 Phase Noise at VDS = 3 V, ID = 30 ma, f = 11 GHz, 10 KHz offset dbc/hz -90 gm Transconductance at VDS = 3 V, ID = 30 ma ms PACKAGE DIMENSIONS ( in mm) 2.0 ± ± 0.1 PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain PACKAGE OUTLINE ± ± IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 V ma VGS (OFF) Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µa V IGSO Gate to Source Leakage Current at VGS = -5 V µa V to California Eastern Laboratories
2 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25 C) SYMBO PARAMETERS RATINGS VDS Drain to Source Voltage V 5.0 VGS Gate to Source Voltage V -5.0 VGD Gate to Drain Voltage V -5.0 ID Drain Current IDSS ma TCH Channel Temperature C 125 TSTG Storage Temperature C -65 to +125 PT Total Power Dissipation mw 250 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25 C) Drain Current, ID (ma) Total Power Dissipation, PT (mw) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature, TA ( C) CURRENT vs. TO VOLTAGE VDS = 3 V Gate to Source Voltage, VGS (V) ORDERING INFORMATION PART QUANTITY PACKAGE NUMBER STYLE Bulk 8-mm wide embossed tape, pin 3 (Source), pin 4 (Drain) face perforated side of tape. -T1 IDSS CLASSIFICATION RANK IDSS (ma) MARKING to 120 V to 120 V to 75 V59 Drain Current, ID (ma) Base Band 1/f Noise, dbv/hz Kpcs/Reel CURRENT vs. TO VOLTAGE Drain to Source Voltage, VDS (V) 8-mm wide embossed tape, pin 1 (Source), pin 2 (Gate) face perforated side of tape. VGS = 0 V VGS = -0.5 V VGS = -1.0 V BASE BAND 1/f NOISE vs. OFFSET FREQUENCY Offset Frequency, khz VDS = 3 V, IDS = 30 ma
3 NONLINEAR MODEL s s VTO RG 10 BETA 0.04 RGMET 0 GAMMA 0.07 KF 2e-10 Q 2 TNOM 27 CDS 0.27e-12 CGSO CGDO 0.85e e-12 VBR Infinity _PKG IDSS = 55 VGS = 0, VDS = 3 V Power: VDS = 3 V, ID = 30 ma, 4 GHz
4 (RANK 58) NONLINEAR MODEL s s VTO RG 10 BETA RGMET 0 GAMMA KF 2e-10 Q 1.8 TNOM 27 CDS 0.27e-12 CGSO 0.85e-12 CGDO 0.055e-12 VBR Infinity _PKG IDSS = 82 VGS = 0, VDS = 3 V
5 (RANK 59) NONLINEAR MODEL s s VTO RG 10 BETA 0.04 RGMET 0 GAMMA 0.07 KF 2e-10 Q 2 TNOM 27 CDS 0.27e-12 CGSO CGDO 0.85e e-12 VBR Infinity _PKG IDSS = 55 VGS = 0, VDS = 3 V Power: VDS = 3 V, ID = 30 ma, 4 GHz EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA (408) Telex FAX (408) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE 1/99
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NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT 2.0 ± 0.2
FEATURES NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT HIGH POWER GAIN: GA = 6 db TYP, MSG = 8 db TYP at f = 2 GHZ, VCE = 2 V, IC = 3 ma, ZS = ZL = 50 Ω LOW NOISE: NF =.0 db TYP at f = 2 GHZ, VCE
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX
FEATURES HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT- 33 package SUPPLY VOLTAGE: VCC =. to. V WIDEBAND RESPONSE: : fu =.9 GHz TYP : fu =. GHz TYP POWER GAIN: : GP = 13 db TYP : GP = db TYP
DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
DATA SHEET The µpa801t has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1. db TYP. @ f = 1 GHz,, IC = 7 ma High Gain
MMA GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations
EC2612 RoHS COMPLIANT
40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor EC2612 RoHS COMPLIANT Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm
1W High Linearity and High Efficiency GaAs Power FETs
1W High Linearity and High Efficiency GaAs Power FETs FEATURES! 1W Typical Power at 6 GHz PHOTO ENLARGEMENT! Linear Power Gain: G L = 13 db Typical at 6 GHz! High Linearity: IP3 = 4 dbm Typical at 6 GHz!
DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1.9 db TYP. @ f = GHz, VCE = 1 V, IC = ma High Gain S1e =
DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
DATA SHEET NPN SILICON RF TRANSISTOR SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The SC8 is a low supply voltage transistor designed
DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1. db TYP. @ f = 1 GHz,, IC = 7 ma High Gain S1e = 1 db TYP.
DATA SHEET NE68030 / 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE683 / SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD The NE683 / SC8 is a low supply voltage
Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.
![Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.](/thumbs/84/89103363.jpg "Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.")
ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT
CHA3664-QAG RoHS COMPLIANT
CHA3664-QAG RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package A3667A A3688A YYWWG The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier.
Features. Specifications. Applications
ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies ATF 531P8 is a single-voltage high linearity, low noise E phemt housed
Advanced Information: AI GHz Medium Power Amplifier. GaAs Monolithic Microwave IC
: AI1805 GaAs Monolithic Microwave IC UMS develops a packaged monolithic medium power amplifier delivering 23.5dBm output power at 1dB compression point, associated with 24dB of linear gain from 17 to
RoHS COMPLIANT MGF4841AL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.
DESCRIPTION The power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers. FEATURES High gain and High Pout Glp=11.dB, P1dB=14.dBm, Pout,sat=16.dBm @ f=12ghz APPLICATION
SILICON MMIC QUADRATURE MODULATOR
FEATURES WDE SUPPLY VOLTAGE RANGE: 2.7 ~ 5.5 V BROADBAND OPERATON: MODOUT = 00-400 MHz, / = DC to 0 MHz NTERNAL 90 PHASE SHFTER POWER SAVE FUNCTON LOW POWER CONSUMPTON: 6 ma Typ. @ 3 V SMALL SSOP 6 PACKAGE
DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD (8) High ft: ft = GHz TYP. @, IC = ma, f = GHz Low noise
RoHS COMPLIANT MGF4841CL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.
DESCRIPTION The power InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The is designed for automotive application and AEC-Q1 qualified. FEATURES High gain and High
E-PHEMT GHz. Ultra Low Noise, Low Current
Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features Low Noise Figure, 0.5 db Gain, 16 db at 2 GHz High Output IP3, + dbm Low Current, ma Wide bandwidth External biasing and matching required
MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias
MMA GHz 1W Traveling Wave Amplifier Data Sheet
Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication
Data Sheet 0GX. ATF Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package. Features. Description. Specifications
![Data Sheet 0GX. ATF Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package. Features. Description. Specifications](/thumbs/84/90611572.jpg "Data Sheet 0GX. ATF Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package. Features. Description. Specifications")
ATF-5189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies s ATF-5189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface
The following part numbers from this appnote are not recommended for new design. Please call sales
California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590
CHA3565-QAG RoHS COMPLIANT
Sij & NF (db) RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package The is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications,
DATA SHEET NE68018 / 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE688 / SC53 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD High Gain Bandwidth Product (ft = GHz TYP.)
0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
RoHS COMPLIANT MGF4964BL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.
< Low Noise GaAs HEMT > DESCRIPTION The super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=2ghz NFmin.
AM V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process
FHX76LP Super Low Noise HEMT
FEATURES Low Noise Figure: NF=.dB (Typ.)@f=1GHz High Associated Gain: Gas=13.5dB (Typ.)@f=1GHz High Reliability Small Size SMT Package Tape and Reel Packaging Available FHX76LP DESCRIPTION The FHX76LP
DATA SHEET NE67818 / 2SC5752. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mw) 4-PIN SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE67818 / 2SC72 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (6 mw) 4-PIN SUPER MINIMOLD Ideal for medium output power amplification PO
5-21GHz Driver Amplifier. GaAs Monolithic Microwave IC in SMD leadless package
Description GaAs Monolithic Microwave IC in SMD leadless package The CHA3664-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from
MOS FIELD EFFECT TRANSISTOR
DATA SHEET MOS FIELD EFFECT TRANSISTOR μpa6ta N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The μpa6ta is a switching device which can be driven directly by a 2.5-V power source.