WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS VCC (IFQ) VCC (RF)

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1 FEATURES BROADBAND OPERATION RF & LO DC to GHz IF (IQ) DC to MHz WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±. db Typical Phase Matching: ±. (driven in phase) AGC DYNAMIC RANGE: db Typical LOW DISTORTION: dbc Typical SMALL SSOP PACKAGE TAPE AND REEL PACKAGING AVAILABLE DESCRIPTION The UPC766GR Silicon MMIC Wideband IQ Demodulator was manufactured with the NESAT III MMIC process. The NESAT III process produces transistors with ft approaching GHz. The device was designed specifically for digital video and data receivers. The IC consists of a wide band RF amplifier, Gain Control amplifier, dual balanced mixers, LO buffers, and I & Q output buffer amplifiers. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS ELECTRICAL CHARACTERISTICS (TA = C, = V, ZL = Ω) FUNCTIONAL BLOCK DIAGRAM I BiasTrim (IFI) (RF) GND (RF) UPC766GR PART NUMBER UPC766GR PACKAGE OUTLINE S (SSOP ) SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) ma 6 7 frf RF Input Bandwidth fif = MHz, frf > flo, db down MHz DC-7 DC- fif IF Output Bandwidth frf = MHz, frf> flo, db down, VAGC = V MHz CG Conversion Gain db NF Noise Figure db IM rd Order Intermodulation Distortion frf = MHz, frf = 9 MHz, flo = MHz, PIN = - dbm, VAGC = V dbc Φ IQ Phase Balance (LO driven in phase) deg ±. ±. G IQ Amplitude Balance db ±. ±. GAGC AGC Range, VAGC = - V db LO-RF LO to RF Isolation db LO-IF LO to IF Isolation db PSAT Saturated Output Level dbm + VO Saturated Output Voltage (ZL = Ω//pF) VP-P... frf = MHz, fif = MHz, PLO = - dbm, PRF = - dbm, VAGC = V, frf > flo unless otherwise specified.. RF Bandwidth defined as db down from response at frf = MHz.. IF Bandwidth defined as db down from response at fif = MHz. RFin RFin GND(RF) VAGC (IFQ) Q Bias Trim GND (IFI ) LO (I) LO (I) LO (Q) LO (Q) GND(IFQ) Qout Qout

2 ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS Supply Voltage V 6 PD Power Dissipation mw TOP Operating Temperature Range C - to + TSTG Storage Temperature C - to +. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on a xx.6 mm epoxy glass PWB (TA = C). PIN FUNCTIONS RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX Supply Voltage V... TOP Operating Temperature C Pin Pin Pin Voltage Function and Explanation Equivalent Circuit No. Name Typ. (V) I Trim. Limiter control for I-IF output (IFI). Power supply pin of I-Mixer. (RF). Power supply pin of RF and AGC block. GND (RF). Ground pin of RF and AGC block. RFIN.6 RF input pin. For single-ended applications, Pin 6 should be bypassed to GND via a capacitor. 6 RFIN.6 7 GND (RF). Ground pin of RF and AGC block. VAGC ~ Gain control pin. VAGC = V: Maximum Gain VAGC = V: Maximum Attenuation 9 (IFQ). Power supply pin of Q-Mixer Q Trim. Limiter control for Q-IF output. 6 To next block

3 PIN FUNCTIONS Pin Pin Pin Voltage Function and Explanation Equivalent Circuit No. Name Typ. (V) Qout. Q-IF output pin. Output impedance is approximately Ω. Output load should be approximately Ω. Pin and pin are differential outputs. For single-ended Qout. applications, terminate unused output with equivalent impedance. GND (IFQ). Ground pin of Q-IF block. LO (Q). Oscillator input of Q-Mixer. For single-ended applications, pin should be bypassed to GND via a capacitor. LO (Q). 6 LO (I). Oscillator input of I-Mixer. For single-ended applications, pin 6 should be bypassed to GND via a capacitor. 7 LO (I). GND (IF I). Ground pin of I-IF block. 9 IOUT. I-IF output pin. Output impedance is approximately Ω. Output load should be approximately Ω. Pin 9 and pin are differential outputs. For single-ended applications, terminate unused output with equivalent impedance. Iout. From block before + _ From block before + _

4 TYPICAL PERFORMANCE CURVES (TA = C unless otherwise specified) Output Power, POUT (dbm) CONVERSION GAIN vs. RF FREQUENCY AND TEMPERATURE + C - C + C RF Frequency (MHz) frf = MHz fif = MHz VAGC = V Input Power, PIN (dbm) fif = MHz VAGC = V OUTPUT POWER vs. INPUT POWER Output Power and IM (dbm) CONVERSION GAIN vs. IF FREQUENCY AND TEMPERATURE frf = MHz VAGC = V - C + C + C IF Frequency (MHz) OUTPUT POWER AND IM vs. INPUT POWER POUT IM frf = MHz frf = 9 MHz flo = MHz VAGC = V RF Input Power (dbm)

5 TYPICAL PERFORMANCE CURVES (TA = C, fif = MHz, unless otherwise specified.) IQ Phase Balance, Φ ( ) LO Leakage (dbc) Third Order Intermodulation Distortion, IM (dbc) LO LEAKAGE TO RF PORT vs. LO FREQUENCY AND TEMPERATURE - PLO = - dbm TA = + C TA = + C TA = - C IQ PHASE BALANCE vs. RF FREQUENCY AND TEMPERATURE C + C RF Frequency (MHz) LO Frequency (MHz) - C - THIRD ORDER INTERMODULATION vs. CONVERSION GAIN frf = MHz frf = 9 MHz flo = MHz PIN = - dbm each PLO = - dbm - - IQ Amplitude Balance, G (db) LO Leakage (dbc) Third Order Intermodulation Distortion, IM (dbc) LO LEAKAGE TO IF PORT vs. LO FREQUENCY AND TEMPERATURE TA = - C PLO = - dbm TA = + C TA = + C IQ AMPLITUDE BALANCE vs. RF FREQUENCY RF Frequency (MHz) LO Frequency (MHz) THIRD ORDER INTERMODULATION vs. AGC VOLTAGE frf = MHz frf = 9 MHz flo = MHz PIN = - dbm each - AGC Voltage, VAGC (V)

6 TYPICAL PERFORMANCE CURVES (TA = C) CONVERSION GAIN vs. AGC VOLTAGE - - frf = MHz fif = MHz PRF = - dbm PLO = - dbm - TEST CIRCUIT RF IN VAGC AGC Voltage, VAGC (V) RF Pre- RF Amp. AGC AGC Cont. I-MIX. I-IF Amp. 9 I-LO Q-LO Q-IF Amp. 7 6 Q-MIX. nh Ω Ω pf In Phase Power Divider OSC IN Ω nh Ω pf. All capacitors are pf unless odtherwise noted.. Low Pass Filter on I and QOUT minimizes LO Leakage. Q out

7 APPLICATION CIRCUIT K (Optional) RF IN VAGC OUTLINE DIMENSIONS (Units in mm). MAX. ±. Lead Material: Alloy Lead Plating: Lead Tin Alloy LEAD CONNECTIONS. I BIAS TRIM. (IFI). (RF). GND (RF). RF IN 6. RF IN 7. GND (RF). VAGC 9. (IFQ). Q BIAS TRIM PACKAGE OUTLINE SSOP N NEC C766G XXXXX 7. MAX. ±..6.7 MAX Q OUT. Q OUT. GND (IFQ). LOQ. LOQ 6. LOI 7. LOI. GND (IFI) 9. I OUT. I OUT XXXX = Lot/Date Code ± RF Pre- RF Amp. AGC AGC Cont. I-MIX. I-IF Amp. I-LO Q-LO Q-IF Amp. Q-MIX. 6.±..±..±. RECOMMENDED PCB LAYOUT (Units in mm) I OUT Q OUT. µf. µf R R Q out. All capacitors are pf unless otherwise noted.. Phase shifter element values XC << flo XC = flo. Set R of IOUT and QOUT ports to match the load of IOUT and QOUT ports PART NUMBER UPC766GR-E Note: Embossed Tape, mm wide. C C..6 ORDERING INFORMATION R C R C QUANTITY /Reel LO Input.7.6 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 9 Patrick Henry Drive Santa Clara, CA 9-7 () 9- Telex -69 FAX () Hour Fax-On-Demand: -9- (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE //

PRELIMINARY DATA SHEET IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER. Vcc (I) GND (I) VAGC GND (RF) RF IN RF IN GND (RF) Vcc (RF) GND (Q) Vcc (Q)

PRELIMINARY DATA SHEET IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER. Vcc (I) GND (I) VAGC GND (RF) RF IN RF IN GND (RF) Vcc (RF) GND (Q) Vcc (Q) PRELIMINARY DATA SHEET FEATURES DESCRIPTION IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER ON CHIP 9 PHASE SHIFTER IQ PHASE AND AMPLITUDE BALANCE: Amplitude Balance: ±.5 db Phase Balance: ± 2. LOW DISTORTION:

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