ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER PACKAGE OUTLINE

Transcription

1 FEATURES BANDWIDTH AND TYPICAL GAIN 12 MHz at AVOL = 3 17 MHz at AVOL = 7 MHz at AVOL = ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER VERY SMALL PHASE DELAY GAIN ADJUSTABLE FROM TO 3 NO FREQUENCY COMPENSATION REQUIRED DESCRIPTION The is a video amplifier with differential input and output stages. A high frequency process (ft = 6 GHz) improves AC performance compared with industry-standard video amplifiers. This device is excellent as a sense amplifier for highdensity CCDs, as a video or pulse amplifier in high-resolution displays, and in communications equipment. ELECTRICAL CHARACTERISTICS (TA = 2 C, VCC = ±6 V, RS = Ω, f = MHz) PART NUMBER PACKAGE OUTLINE G8 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Power Supply Current ma 13 2 AVd Differential Voltage Gain: BW Bandwidth (Gain is 3 db down MHz 12 from the gain at KHz) MHz 7 tr Rise Time, VOUT = 1Vp-p: ns 2.9 ns 2.7 tpd Propagation Delay, VOUT = 1 Vp-p: ns 2 ns 1.2 RIN Input Impedance: kω 4. kω 18 CIN Input Capacitance pf 2 IIO Input Offset Current µa.4. IB Input Bias Current µa 2 4 VN Input Noise Voltage, k to MHz µvr.m.s. 3 VI Input Voltage Range V ±1. CMRR Common Mode Rejection Ratio, Vcm = ±1 V, f khz db 7 Vcm = ±1 V, f = MHz db 3 6 SVRR Supply Voltage Rejection Ratio, V = ±. V db 7 VO(off) Output Offset Voltage, VO(off) = OUT1 - OUT2 V.3 1. V.1 1. VO (CM) Output Common Mode Voltage V VOp-p Max. Output Voltage Swing, single-ended Vp-p Isink Output Sink Current ma Gain select pins GA and GB are connected together. 2. All gain select pins are open. 3. Insert adjustment resistor ( to kω) between GA and GB when variable gain is necessary. Single Ended Voltage Gain, AVS (db) SINGLE ENDED VOLTAGE GAIN vs. FREQUENCY k 1 M M M California Eastern Laboratories

2 ABSOLUTE MAXIMUM RATINGS 1 (TA = 2 C) EQUIVALENT CIRCUIT SYMBOLS PARAMETERS UNITS RATINGS VC VE Voltage between VC and VE V -.3 to 14 PT Total Power Dissipation 2 mw 28 VID Differential Input Voltage V ± VIN Input Voltage V ±6 IO Output Current ma 3 TOP Operating Temperature C -4 to +7 TSTG Storage Temperature C - to Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on cm x cm x.16 mm glass epoxy PCB (TA = Max TOP). 3. Mounted on cm x cm x 1.6 mm glass epoxy PCB with copper film (TA = Max TOP). RECOMMENDED OPERATING CONDITIONS (TA = 2 C) SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX VC Positive Supply Voltage V Ve Negative Supply Voltage V IO source Source Current ma 2 IO sink Sink Current ma 2. 7 Ω Output Voltage (Vp-p) VIDEO LINE SINGLE ENDED OUTPUT VOLTAGE SWING vs. FREQUENCY Frequency Range MHz DC 2 Attention: Due to high frequency characteristics, the physical circuit layout is very critical. Supply voltage line bypass, double-sided printed-circuit board, and wide-area ground line layout are necessary for stable operation. Two signal resistors connected to both inputs and two load resistors connected to both outputs should be balanced for stable operation. TYPICAL PERFORMANCE CURVES (TA = 2 C) 7 Ω 7 Ω VC = 6 V, Ve = -6 V k 1 M M M 1G.1 µ 7 Ω OUT 2 Ω 7 Ω 2 Ω IN1 GA TYPICAL PERFORMANCE UNDER SINGLE SUPPLY + V OPERATION* PARAMETER CONDITIONS TYPICAL UNITS Differential MHz 3 db 11 db Bandwidth Gain is 3 db down from the gain at KHz 6 MHz 11 MHz Rise Time RS = Ω, VOUT = 8 mvp-p 2.2 ns Propagation Delay RS = Ω, VOUT = 8 mvp-p 2.8 ns RS = Ω, VOUT = 6 mvp-p 1.8 ns Phase Shift MHz -123 degree -93 degree Output Power ZL = Ω, 1 MHz RA = 24 Ω. dbm RA = 9 Ω dbm RA = 8 Ω -11. dbm * See Application Circuit Relative Gain, Avr NORMALIZED VOLTAGE GAIN vs. SUPPLY VOLTAGE VC IN2 GB VE VC Ve Supply Voltage, V± (V) OUT1 OUT2

3 TYPICAL PERFORMANCE CURVES (TA = 2 C) Output Voltage, VO (Vp-p) Input Bias Current, IB (µa) Supply Current, ICC (ma) SINGLE ENDED OUTPUT VOLTAGE SWING vs. TEMPERATURE INPUT BIAS CURRENT vs. TEMPERATURE Vc =6 V, Ve = -6 V SUPPLY CURRENT vs. TEMPERATURE VC = 6 V, VE = -6 V Output Sink Current, IOSINK (ma) Differential Gain, AVD (V/V) Supply Current, ICC (ma) SINK CURRENT vs. TEMPERATURE DIFFERENTIAL VOLTAGE GAIN vs. RESISTANCE BETWEEN GA AND GB 1 k k RADJ (Ω) SUPPLY CURRENT vs. SUPPLY VOLTAGE VC VE Supply Voltage, V± (V)

4 TYPICAL PERFORMANCE CURVES (TA = 2 C) Phase Shift (degree) PHASE SHIFTvs. FREQUENCY k 1 M M M TYPICAL APPLICATIONS Photo Signal Detector PIN PHOTO DIODE Application for + V Single Supply Since the input impedance of the IC falls when the gain rises, stable operation can be achieved by inserting a FET buffer when necessary as illustrated above. +V Vc R1 R2 7Ω R3 Vc Q1 +V V+ R4 Vc + V Ve - V k V- 3 k R 1 kω R6 1 kω RA RA pf C1 pf C2

5 OUTLINE DIMENSIONS (Units in mm) 1.8 MAX ±.1 ORDERING INFORMATION PART NUMBER -E1 PACKAGE OUTLINE G xxx N MAX MAX Lot Code.6 ±.2 6. ±.3 1. Each lead centerline is located within.12 mm (. inch) of its true position at maximum material condition. 2. All dimensions are typical unless otherwise specified. 4.4 QUANTITY 2/Reel 1.1 CONNECTION DIAGRAM (TOP VIEW) IN2 GA VE OUT IN1 GB VC OUT1 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 49 Patrick Henry Drive Santa Clara, CA (48) Telex FAX (48) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE /99