NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET PACKAGE OUTLINE

Transcription

1 FEATURES NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel USABLE TO.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-, PCS HIGH OUTPUT POWER: 35 dbm TYP HIGH LINEAR GAIN: 1 db TYP at 1.9 GHz LOW THERMAL RESISTANCE: 5 C/W DESCRIPTION NEC's NE65379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures ELECTRICAL CHARACTERISTICS (TC = 5 C) Functional Characteristics Electrical DC Characteristics PART NUMBER PACKAGE OUTLINE NE65379A SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS P1dB Power Out at 1dB Gain Compression dbm 35. GL Linear Gain 1 db ηadd Power Added Efficiency % 5 ID Drain Current A 1. OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A IDSS Saturated Drain Current A 4.5 VDS =.5 V; VGS = V VP Pinch-Off Voltage V VDS =.5 V; IDS = 1 ma RTH Thermal Resistance C/W 5 6 Channel to Case BVGD Gate-to-Drain Breakdown Voltage V 17 IGD = 1 ma 79A NE65379A Note: Unless otherwise specified, tolerance is ±. mm f = 1.9 GHz, VDS = 6. V Rg = 3 Ω IDSQ = 5 ma (RF OFF) Notes: 1. Pin = dbm. DC performance is tested 1%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. 5.7 MAX Gate T E 4. MAX Source 9 X 5.7 MAX.4.15 Drain MAX Source Gate Drain 1. MAX MAX BOTTOM VIEW 1. MAX California Eastern Laboratories

2 NE65379A ABSOLUTE MAXIMUM RATINGS 1 (TC = 5 C) RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 15 VGS Gate to Source Voltage V -7. IDS Drain Current A 5.6 IGS Gate Current ma 5 PT Total Power Dissipation W 1 TCH Channel Temperature C 15 TSTG Storage Temperature C -65 to +15 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PD (W) Transconductance, GM (ms) W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 1 C 5 RTH = 6 C/W 1 Case Temperature, TC ( C) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE SYMBOLS PARAMETERS UNITS TYP MAX VDS Drain to Source Voltage V TCH Channel Temperature C 15 GCOMP Gain Compression db 3. ORDERING INFORMATION Drain Current, ID (A) Drain Current, ID (A) Maximum Available Gain, GMAG (db) PART NUMBER QTY NE65379A-T1 1 K/Reel NE65379A Bulk, 5 piece min. DRAIN CURRENT vs. DRAIN VOLTAGE Drain Voltage, VD (V) MAXIMUM AVAILABLE GAIN vs. FREQUENCY Gate Voltage, VG (V) Frequency, f (GHz) V 3 ma V 5 ma V 5 ma VGS = V -.5 V -1. V -1.5 V -. V

3 NE65379A TYPICAL SCATTERING PARAMETERS (TA = 5 C) Note: This file and many other s-parameter files can be downloaded from NE65379A VD = 6. V, ID = 5 ma Coordinates in Ohms Frequency in GHz VD = 3. V, ID = 3 ma FREQUENCY S11 S1 S1 S K MAG 1 GHz MAG ANG MAG ANG MAG ANG MAG ANG (db) Note: 1. Gain Calculation: j5 9 1 j5 j1 S GHz j1 S 4. GHz S11.5 GHz S -j1.5 GHz j5 -j5 -j1 MAG = S1 (K K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 S1 MAG = Maximum Available Gain MSG = Maximum Stable Gain S1 4. GHz S1 4. GHz -9 6 S1.5 GHz S1.5 GHz

4 NE65379A NONLINEAR MODEL SCHEMATIC GATE LGX.1 nh LG.6 nh CGS PKG.1 pf FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -.55 RG. VTOSC RD.1 ALPHA 3 RS.1 BETA 1. RGMET GAMMA KF GAMMADC ().35 AF 1 Q 1.7 TNOM 7 DELTA. XTI 3 VBI.6 EG 1.43 IS 1e- VTOTC N 1 BETATCE RIS FFE 1 RID TAU 1e-1 CDS.5e-1 RDB.1 CBS CGSO (3) 5e-1 CGDO (4) 4.5e-1 DELTA1 1 DELTA. FC.5 VBR Infinity (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: () GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD Q1 RSX. ohms LSX.1 nh SOURCE RDX. ohms RDBX 4 ohms CBSX 1 pf UNITS LD LDX.55 nh.15 nh Parameter capacitance inductance resistance CDS PKG.1 pf DRAIN Units picofarads nanohenries ohms MODEL RANGE Frequency:.4 to GHz Bias: VDS = 3 V to V, ID = 3 ma to 5 ma Date: /3

5 NE65379A APPLICATION CIRCUIT ( GHz) VG J3 J1 RF Input C RFIN C13 C3 C9 C11 P1 GND J1 NE65379A PARTS LIST C6 C13 VG J3 RR1 C5 C6 T C 7 X U1 VD C4 J4 C NE65379A-EV C5.34 C1 C11 C9 C3 C L =.9 L =.74 W =.1 W =.1 L =. W =.5 R6 NE65379A C C C1 C4 L =. W =.5 1 TF-1637 TEST CIRCUIT BLK X 3/16 PHILLIPS PAN HEAD 16 MA11J C, C3 CASE 11 pf CAP MURATA 15 1 MCR3J R1 63 OHMS RESISTOR ROHM 1A47CP15X C1, C CASE A 47 pf CAP ATC A4R3CP15X C4 CASE A 4.3 pf CAP ATC 1 1 1A5R6CP15X C5 CASE A 5.6 pf CAP ATC AR5CP15X C6 CASE A.5 pf CAP ATC 1 1 1ARCP15X C7 CASE A. pf CAP ATC 9 TAJB475K1R C1, C13 CASE B 4.7 uf CAP AVX GRM4X7RK5BL C1, C uf CAP MURATA 7 GRM4CG1J5BD C, C9 5 1 pf CAP MURATA 6 1 NE65379A U1 IC NEC P1 GROUND LUG CONCORD J3, J4 FEEDTHRU MURATA J1, J FLANGE MOUNT JACK RECEPTACLE J RFOUT Contact CEL Engineering for artwork and more detailed information. C C1 C1 C1 C7 Er = 4. H =." J4 J VD RF Output

6 NE65379A P.C.B. LAYOUT (Units in mm) 5.9 TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V GAIN AND PAE vs. OUTPUT POWER FC = 1.96 GHz, VDS = 3 V Gain, IDSQ = ma 1 Gain, IDSQ = 6 ma PAE, IDSQ = ma PAE, IDSQ = 6 ma Drain Source FOR 79A PACKAGE Output Power, POUT (dbm) GAIN AND SATURATION POWER vs. FREQUENCY POUT = 1 dbm for Gain, 3 dbm for PSAT, VDS = 3 V Gate Gain, IDSQ = 1 ma Gain, IDSQ = ma POUT, IDSQ = 1 ma POUT, IDSQ = ma Through hole φ PAE (%) Saturation Power, PSAT (dbm) FC = 1.96 GHz, VDS = 6 V GAIN AND PAE vs. OUTPUT POWER Gain, IDSQ = ma Gain, IDSQ = 6 ma PAE, IDSQ = ma PAE, IDSQ = 6 ma Output Power, POUT (dbm) GAIN AND SATURATION POWER vs. FREQUENCY POUT = 17 dbm for Gain, 3 dbm for PSAT, VDS = 6 V Gain, IDSQ = 1 ma Gain, IDSQ = ma POUT, IDSQ = 1 ma POUT, IDSQ = ma PAE (%) Saturation Power, PSAT (dbm) Frequency, f (GHz) Frequency, f (GHz)

7 NE65379A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3 V and VDS = 6 V Third Order Intermodulation Distortion, IM3 (dbc) ACPR (dbc) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER FC = 1.96 GHz, VDS = 3 V IDSQ = 1 ma -4 IDSQ = ma IDSQ = 4 ma IDSQ = 6 ma IDSQ = ma ACPR vs. OUTPUT POWER ACPR1 5KHz ACPR 5KHz IDSQ = 1 ma -6 IDSQ = ma IDSQ = 4 ma FC = 1.96 GHz, VDS = 3 V IDSQ = 6 ma 64 CH IS95 CDMA IDSQ = ma Third Order Intermodulation Distortion, IM3 (dbc) ACPR (dbc) THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER FC = 1.96 GHz, VDS = 6 V IDSQ = 1 ma IDSQ = ma IDSQ = 4 ma IDSQ = 6 ma IDSQ = ma ACPR vs. OUTPUT POWER FC = 1.96 GHz, VDS = 6 V 64 CH IS95 CDMA ACPR1 5KHz IDSQ = 1 ma -6 IDSQ = ma IDSQ = 4 ma IDSQ = 6 ma IDSQ = ma Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ACPR 15MHz /4/ A Business Partner of NEC Compound Semiconductor Devices, Ltd.