2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor

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1 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These n-channel enhancement mode field effect transistors are produced using National s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum of effort in most applications requiring up to 400 ma DC and can deliver pulsed currents up to 2A This product is particularly suited to low voltage low current applications such as small servo motor controls power MOSFET gate drivers and other switching applications TO Series TL G Absolute Maximum Ratings Features Y Y Y Y Y TO-236 AB (SOT-23) 7002 Series Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G March 1993 TL G Symbol Parameter 2N7000 2N7002 NDF7000A NDS7002A Units V DSS Drain-Source Voltage 60 V V DGR Drain-Gate Voltage (R GS s 1MX) 60 V V GSS Gate-Source Voltage g40 V I D Drain Current Continuous ma Pulsed ma P D Total Power Dissipation T A e 25 C mw Derating above 25 C mw C T J T STG Operating and Storage Temperature Range b55 to 150 b65 to 150 C T L Maximum Lead Temperature for Soldering Purposes from Case for 10 Seconds 300 C 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor C1995 National Semiconductor Corporation TL G RRD-B30M115 Printed in U S A

2 2N7000 Electrical Characteristics T C e 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS e 0V I D e 10 ma 60 V I DSS Zero Gate Voltage Drain Current V DS e 48V V GS e 0V 1 ma T C e 125 C 1 ma I GSSF Gate-Body Leakage Forward V GS eb15v V DS e 0V b10 na ON CHARACTERISTICS V GS(th) Gate Threshold Voltage V DS e V GS I D e1 ma V r DS(ON) Static Drain-Source V GS e 10V I D e 0 5A X On-Resistance T C e 125 C X V DS(ON) Drain-Source On-Voltage V GS e 10V I D e 0 5A V V GS e 4 5V I D e 75 ma V I D(ON) On-State Drain Current V GS e 4 5V V DS e 10V ma g FS Forward Transconductance V DS e 10V I D e 200 ma ms DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS e 25V V GS e 0V f e 1 0 MHz pf C oss Output Capacitance pf C rss Reverse Transfer Capacitance 4 5 pf SWITCHING CHARACTERISTICS t on Turn-On Time V DD e 15V I D e 0 5V V GS e 10V 10 ns t off Turn-Off Time R G e 25X R L e25x 10 ns BODY-DRAIN DIODE RATINGS I S Maximum Continuous Drain-Source Diode Forward Current 200 ma I SM Maximum Pulsed Drain-Source Diode Forward Current 500 ma V SD Drain-Source Diode Forward Voltage V GS e 0V I S e 200 ma 1 5 V THERMAL CHARACTERISTICS R ija Thermal Resistance Junction to Ambient C W R ijc Thermal Resistance Junction to Case 40 C W Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 2

3 2N7002 Electrical Characteristics T C e 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS e 0V I D e 10 ma 60 V I DSS Zero Gate Voltage Drain Current V DS e 60V V GS e 0V 1 ma T C e 125 C 500 ma I GSSF Gate-Body Leakage Forward V GS e 20V 100 na I GSSR Gate-Body Leakage Reverse V GS eb20v b100 na ON CHARACTERISTICS V GS(th) Gate Threshold Voltage V DS e V GS I D e250 ma V r DS(ON) Static Drain-Source V GS e 10V I D e 0 5A X On-Resistance T C e 125 C X V GS e 5V I D e 50 ma X T C e 125 C X V DS(ON) Drain-Source On-Voltage V GS e 10V I D e 0 5A V V GS e 5V I D e 50 ma V I D(ON) On-State Drain Current V GS e 10V V DS t 2V DS(ON) ma g FS Forward Transconductance V DS t 2V DS(ON) I D e200 ma ms DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS e 25V V GS e 0V f e 1 0 MHz pf C oss Output Capacitance pf C rss Reverse Transfer Capacitance 4 5 pf SWITCHING CHARACTERISTICS t ON Turn-On Time V DD e 30V I D e 200 ma V GS e 10V 20 ns t OFF Turn-Off Time R GEN e 25X R L e150x 20 ns BODY-DRAIN DIODE RATINGS I S Maximum Continuous Drain-Source Diode Forward Current 115 ma I SM Maximum Pulsed Drain-Source Diode Forward Current 800 ma V SD Drain-Source Diode Forward Voltage V GS e 0V I S e 115 ma 1 5 V THERMAL CHARACTERISTICS R ija Thermal Resistance Junction to Ambient 625 C W Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 3

4 NDF7000A Electrical Characteristics T C e 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS e 0V I D e 10 ma 60 V I DSS Zero Gate Voltage Drain Current V DS e 48V V GS e 0V 1 ma T C e 125 C 1 ma I GSSF Gate-Body Leakage Forward V GS eb15v b10 na ON CHARACTERISTICS V GS(th) Gate Threshold Voltage V DS e V GS I D e1 ma V r DS(ON) Static Drain-Source V GS e 10V I D e 0 5A X On-Resistance T C e 125 C X V DS(ON) Drain-Source On-Voltage V GS e 10V I D e 500 ma V V GS e 4 5V I D e 75 ma V I D(ON) On-State Drain Current V GS e 4 5V V DS t 2V DS(ON) ma g FS Forward Transconductance V DS t 2V DS(ON) I D e200 ma ms DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS e 25V V GS e 0V f e 1 0 MHz pf C oss Output Capacitance pf C rss Reverse Transfer Capacitance 4 5 pf SWITCHING CHARACTERISTICS t on Turn-On Time V DD e 15V I D e 500 ma V GS e 10V 10 ns t off Turn-Off Time R G e 25X R L e25x 10 ns BODY-DRAIN DIODE RATINGS I S Maximum Continuous Drain-Source Diode Forward Current 400 ma I SM Maximum Pulsed Drain-Source Diode Forward Current 2000 ma V SD Drain-Source Diode Forward Voltage V GS e 0V I S e 400 ma V THERMAL CHARACTERISTICS R ija Thermal Resistance Junction to Ambient 200 C W Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 4

5 NDS7002A Electrical Characteristics T C e 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS e 0V I D e 10 ma 60 V I DSS Zero Gate Voltage Drain Current V DS e 60V V GS e 0V 1 ma T C e 125 C 500 ma I GSSF Gate-Body Leakage Forward V GS e 20V 100 na I GSSR Gate-Body Leakage Reverse V GS eb20v b100 na ON CHARACTERISTICS V GS(th) Gate Threshold Voltage V DS e V GS I D e250 ma V r DS(ON) Static Drain-Source V GS e 10V I D e 0 5A X On-Resistance T C e 125 C X V GS e 5V I D e 50 ma X T C e 125 C X V DS(ON) Drain-Source On-Voltage V GS e 10V I D e 500 ma V V GS e 5 0V I D e 50 ma V I D(ON) On-State Drain Current V GS e 10V V DS t 2V DS(ON) ma g FS Forward Transconductance V DS t 2V DS(ON) I D e200 ma ms DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS e 25V V GS e 0V f e 1 0 MHz pf C oss Output Capacitance pf C rss Reverse Transfer Capacitance 4 5 pf SWITCHING CHARACTERISTICS t ON Turn-On Time V DD e 30V I D e 200 ma V GS e 10V 20 ns t OFF Turn-Off Time R G e 25X R L e150x 20 ns BODY-DRAIN DIODE RATINGS I S Maximum Continuous Drain-Source Diode Forward Current 280 ma I SM Maximum Pulsed Drain-Source Diode Forward Current 1500 ma V SD Drain-Source Diode Forward Voltage V GS e 0V I S e 400 ma V THERMAL CHARACTERISTICS R ija Thermal Resistance Junction to Ambient 417 C W Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0% 5

6 Typical Electrical Characteristics 2N7000 2N7002 NDF7000A NDS7002A TL G FIGURE 1 On-Region Characteristics TL G FIGURE 2 r DS(ON) Variation with Drain Current and Gate Voltage TL G FIGURE 3 Transfer Characteristics FIGURE 4 Breakdown Voltage Variation with Temperature TL G TL G FIGURE 5 Gate Threshold Variation with Temperature TL G FIGURE 6 On-Resistance Variation with Temperature 6

7 Typical Electrical Characteristics (Continued) 2N7000 2N7002 NDF7000A NDS7002A (Continued) FIGURE 7 On-Resistance vs Drain Current TL G TL G FIGURE 8 Body Diode Forward Voltage Variation with Current and Temperature TL G FIGURE 9 Capacitance vs Drain-Source Voltage TL G FIGURE 10 Gate Charge vs Gate-Source Voltage TL G FIGURE 11 2N7000 Safe Operating Area TL G FIGURE 12 2N7002 Safe Operating Area 7

8 Typical Electrical Characteristics (Continued) 2N7000 2N7002 NDF7000A NDS7002A (Continued) TL G FIGURE 13 NDF7000A Safe Operating Area TL G FIGURE 14 NDS7002A Safe Operating Area FIGURE 15 TO-92 Transient Thermal Response TL G FIGURE 16 SOT-23 Transient Thermal Response TL G

9 Physical Dimensions inches (millimeters) TO-92 TL G

10 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions inches (millimeters) (Continued) Note 1 Meets all JEDEC dimensional requirements for TO-236AB Note 2 Controlling dimension millimeters Note 3 Available also in TO-236AA Contact your local National Semiconductor representative for delivery and ordering information Note 4 Tape and reel is the standard packaging method for TO-236 LIFE SUPPORT POLICY TO-236AB (SOT-23) (Notes 3 4) TL G NATIONAL S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a) are intended for surgical implant support device or system whose failure to perform can into the body or (b) support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness be reasonably expected to result in a significant injury to the user National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd Japan Ltd 1111 West Bardin Road Fax (a49) th Floor Straight Block Tel Arlington TX cnjwge tevm2 nsc com Ocean Centre 5 Canton Rd Fax Tel 1(800) Deutsch Tel (a49) Tsimshatsui Kowloon Fax 1(800) English Tel (a49) Hong Kong Fran ais Tel (a49) Tel (852) Italiano Tel (a49) Fax (852) National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications

11 This datasheet has been download from: Datasheets for electronics components.

BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor

BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode field effect transistors are produced using National s very high cell density third