CS9N2302-S1 20V 3.2 A N-Channel MOSFET CS9N2302-S1. 20V 3.2 A N-Channel MOSFET. Applications. Features. Available Package. General Description

Transcription

1 20V 3.2 A N-Channel MOSFET 20V 3.2 A N-Channel MOSFET Features Low on-resistance R DS(ON) = 60 mω V GS = 4.5V, ID = 3.2A High current drive I D = 3.2 ma Low gate drive 8V Low threshold 1.0 V (Typ.) Fast switching speed Turn-on delay 7 ns Turn-off delay 15 ns Low Power Consumption Operating temperature -55 ~150 o C Applications Switching power supply Power amplifier Motor Control Power Converter Power Switch Available Package SOT-23 RoHS compliance General Description The is a miniature surface mount N-channel enhancement mode MOSFET with low R DS(ON). And fast switching speed. This makes it ideal for use in space sensitive, high efficiency power management applications. Typical applications are DC-to-DC converters and power management in portable and battery-powered products such as portable multimedia player, PDA and cordless phones. Marking Diagram and Pin Assignment N-Channel Enhancement Mode MOSFET SOT-23 Package Ordering Information Device Reel Size Quantity per Rail CS9N2302S1LT1 7 inches 3000 units CS9N2302S1LT3 13 inches units Pb-Free package 8mm tape width Top View and Marking Page 1

2 Absolute Maximum Ratings ( T a = 25 C unless otherwise specified) Parameter Symbol Maximum Units Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ± 8 V Drain Current Continuous I D 3.2 A Drain Current Pulsed 2 I DM 10 A Maximum Power Dissipation 1 P D 550 mw Operating Junction and Storage Temperature T J, T stg -55 ~ 150 C NOTE 1: Pulse Test : Pulse width 300 s, Duty Cycle 2% NOTE 2: Guaranteed by design, not subject to production NOTE 3: Maximum ratings are for design aid only, not subject to production testing. Maximum ratings are those values beyond w hich can damage device. Thermal Characteristics (T a = 25 C unless otherwise specified) Parameter Symbol Maximum Units Thermal Resistance, Junction-to-Ambient R JA 115 o C/W Electrical Characteristics ( T a = 25 C unless otherwise Specified) Parameter Symbol Condition Min Typ Max Units Drain-Source Breakdown Voltage BV DS V GS = 0V, I D = 10 A 20 V Zero Gate Voltage Drain Current I DS V DS = 16V, V GS = 0V 1 A Gate-Body Leakage I GS V GS = ±8V, V DS = 0V 100 na Gate Threshold Voltage V th V GS = V DS, I D = 50 A V Drain-Source On-State Resistance R DS(ON) V GS = 4.5V, I D = 3.6A V GS = 2.5V, I D = 3.1A m On-State Drain Current I D(ON) V DS = 5V, V GS = 2.5V 4 A Forward Tran conductance g FS V DS = 5V, I D = 3.6A S Diode Forward Voltage V SD V GS = 0V, I D = 1.1A V Input Capacitance C ISS V DS = 10V 450 Output Capacitance C OSS V GS = 0V f = 1.0MHz 70 Reverse Transfer Capacitance C RSS 43 Turn-on Delay Time t D(ON) Rise Time Turn-off Delay Time t r t D(OFF) V DD = 5V I D = 3.6A V GS = 4.5V R GS = 6Ω R L = Fall Time t f pf ns Page 2

3 Typical Performance Characteristics Page 3

4 Package information Page 4

5 IMPORTANT NOTICE The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable. (CS) does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied. CS reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. No liability will be accepted by CS for any consequence of its use. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CS integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in lifesupport applications, devices or systems or other critical applications. Use of CS products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer s applications, the customer should provide adequate design and operating safeguards. Headquarter Limited Unit 112, 1/F, IC Development Centre 6 Science Park West Avenue Hong Kong Science Park, Shatin, N.T. HONG KONG Tel : (852) Page 5