NEC NE33284A ~I-I~ u ~ I c::j I I= 1-- HETERO JUNCTION FIELD EFFECT TRANSISTOR DATA SHEET. L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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1 DATA SHEET HETERO JUNCTON FELD EFFECT TRANSSTOR L to X BAND SUPER LOW NOSE AMPLFER N-CHANNEL HJ-FET DESCRPTON The is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. ts excellent low noise and high associated gain make it suitable for GPS, PACKAGE DMENSONS (Unit: mm) 1.78±.2 TVRO and another commercial systems. FEATURES Super Low Noise Figure & High Associated Gain NF =.35 db TYP., Ga = 15. db TYP. at f = 4 GHz Gate Width: W 9 = 28,um ORDERNG NFORMATON PART NUMBER SUPPLYNG FORM LEAD LENGTH -SL STCK L = 1.7 mm MN. -T1 Tape & reel L = 1. ±.2 mm -T1A N + co 1'- 2 L a: L r ' u 3 - J L.5 TYP. 4 >- f- <[") c:i =+ 2 1'-: ABSOLUTE MAXMUM RATNGS (TA = 25 "C) Drain to Source Voltage VDs 4. v Gate to Source Voltage VGs -3. v Drain Current D DSS ma Total Power Dissipation Ptot 165 mw Channel Temperature Tch 15 ' C Storage Temperature Tstg -65 to +15 ' C c::j = 1-- f-- 1. Source c:i 2. Drain 3. Source 4. Gate RECOMMENDED OPERATNG CONDTON (TA = 25 "C) CHARACTERSTC Drain to Source Voltage SYMBOL Vos MN. TYP. 2 MAX. Unit 3 v Drain Current lo 1 2 ma nput Power Pin dbm Document No. P1 874EJ2VODSOO (2nd edition) (Previous No. TD-2369) Date Published October 1995 P Printed in Japan Corpcralioo 1995

2 ELECTRCAL CHARACTERSTCS (TA = 25 "C) PARAMETER SYMBOL MN. TYP. MAX. UNT TEST CONDTONS Gate to Source Leak Current GSO.5 1!1A VGs = -3 V Saturated Drain Current loss ma Vos = 2 V, VGs = Gate to Source Cutoff Voltage VGS(off) v Vos = 2 V, lo = 1!1A Transconductance gm 45 7 ms Vos = 2 V, lo = 1 ma Noise Figure NF db f = 12 GHz Vos = 2 V f = 4 GHz lo =1mA Associated Gain Ga db f = 12 GHz f = 4 GHz PRECAUTON: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with AGaAs shottky barrier gate. 2

3 TYPCAL CHARACTERSTCS (TA = 25 'C) 25 TOTAL POWER DSSPATON vs. AMBENT TEMPERATURE DRAN CURRENT vs. DRAN TO SOURCE VOLTAGE :s E c. u; "' Qj ;;: a_ (ij t- l:l a_ """"""""' <( E c ::J c "(ij _f! TA- Ambient Temperature- OC Vos - Drain to Source Voltage- V 5 DRAN CURRENT vs. GATE TO SOURCE VOLT AGE 24 MAXMUM AVALABLE GAl N, FORWARD NSERTON GAN vs. FREQUENCY <( E c :; c _f! Vos = 2 V f v ' ' '... MSG. ' '... Vos = 2 V lo = 1 ma ' ', ]"... ' MAG.... "" ' 1 ' ' r VGs - Gate to Source Voltage- V f- Frequency- GHz Gain Calculations MSG. = S12 1 MAG. = (K ± S12 K = _1_+ ci_l1--'j2::-:-c- c'-l S_1cc-1 c'--1 2 _---c-1'--s-2_ S12 S21 L1 = S11-S 22 -S 21 S12 3

4 S-Parameters Vos =2V,o =1mA START 5 MHz, STOP 18 GHz, STEP 5 MHz S S 12 +9" Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz / / ±18" " / " -" -1. Rmax. = 1-9" Rmax. =.25 S 21 +9" 1. ±18" " " -9" Rm<><. = Rmax. = 1 4

5 MAG. AND ANG. Vos = 2 V, lo = 1 ma FREQUENCY MHz MAG ANG. (deg.) MAG ANG. (deg.) MAG ANG. (deg.) MAG ANG. (deg.)

6 AMP. PARAMETERS FREQUENCY MHz GUmax. db GAmax. S db db K Delay nsec Mason's U G1 G2 db db db

7 Noise Parameters <TYPCAL CONSTANT NOSE FGURE CRCLE> <rapt. vs. frequency> Vos = 2 V lo =1mA Vos = 2 V lo =1mA f = 4 HGz START 2 GHz, STOP 18 GHz, STEP 2 GHz <Noise Parameters> Vos = 2 V, D = 1 ma Freq (GHz) NFmin (db) Ga(dB) Mag.! opt. An g. (deg.) Rn/

8 RECOMMENDED SOLDERNG CONDTONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. <TYPES OF SURFACE MOUNT DEVCE> 127) For more details, refer to our document"semconductor DEVCE MOUNTNG TECHNOLOGY MANUAL" ( El- [] Soldering process Soldering conditions Symbol nfrared ray reflow Peak package's surface temperature: 23 "C or below, Reflow R3- time: 3 seconds or below (21 "C or higher), Number of reflow process: 1, Exposure limit*: None Partial heating method Terminal temperature: 23 "C or below, Flow time: 1 seconds or below, Exposure limit*: None Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 T and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for "Partial heating method". PRECAUTON: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the Japanese law concerned and so on, especially in case of removal. 8

9 [MEMO] 9

10 No part of this document may be copied or reproduced in any form or by any means w ithout the prior w ritten consent of Corporation. Corporation ass umes no responsibility for any errors w hich may appear in this document. Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherw ise, is granted under any patents, copyrights or other intellectual property rights of Corporation or others. While Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. devices are classified into the follow ing three quality grades: " Standard", " Special ", and " Specific". The Specific quality grade applies only to devices developed based on a customer designated " quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or med ical equipment for life support, etc. The quality grade of devices in " Standard" unless otherw ise specified in 's Data Sheets or Data Books. f customers intend to use devices for applications other than those specified for Standard quality grade, they should contact Sales Representative in advance. Anti-radioactive design is not implemented in this product. M