BIPOLAR ANALOG INTEGRATED CIRCUIT

Size: px
Start display at page:

Download "BIPOLAR ANALOG INTEGRATED CIRCUIT"

Transcription

1 DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc8tn SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the sensitivity of GPS receiver. In addition, the μpc8tn which is included output matching circuit contributes to reduce external components and system size. The package is a -pin plastic TSON (Thin Small Out-line Non-leaded) (TN) suitable for surface mount. This IC is manufactured using our UHS (Ultra High Speed Process) SiGe:C bipolar process. FEATURES Supply voltage : VCC =. to. V (.7 V TYP.) Low noise : NF =.8 db VCC =.7 V, fin = 7 MHz : NF =.8 db VCC =.8 V, fin = 7 MHz High gain : GP = 9. db VCC =.7 V, fin = 7 MHz : GP = 9. db VCC =.8 V, fin = 7 MHz Low current consumption : ICC =. ma VCC =.7 V Built-in power-saving function : VPSon =. V to VCC, VPSoff = to. V High-density surface mounting : -pin plastic TSON (TN) package (...7 mm) Included output matching circuit Included very robust bandgap regulator (Small VCC and TA dependence) Included protection circuits for ESD APPLICATION Low noise amplifier for GPS ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form μpc8tn-e μpc8tn-e-a -pin plastic TSON (TN) (Pb-Free) S 8 mm wide embossed taping Pin, face the perforation side of the tape Qty kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: μpc8tn Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU7EJVDS (st edition) Date Published March 8 NS Printed in Japan 8

2 PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View) (Bottom View) Pin No. Pin Name VCC GND S INPUT Power Save Bias OUTPUT VCC Remark Exposed pad : GND ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC TA = + C. V Power-Saving Voltage VPS TA = + C. V Total Power Dissipation Ptot mw Operating Ambient Temperature TA to +8 C Storage Temperature Tstg to + C Input Power Pin + dbm RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC..7. V Operating Ambient Temperature TA + +8 C Power Save Turn-on Voltage VPSon. VCC V Power Save Turn-off Voltage VPSoff. V ELECTRICAL CHARACTERISTICS (TA = + C, =.7 V, fin = 7 MHz, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No Signal (VPS =.7 V).. 8. ma At Power-Saving Mode (VPS = V) μa Power Gain GP Pin = dbm 7 9. db Noise Figure NF.8. db Input Return Loss RLin 7. db Output Return Loss RLout db Data Sheet PU7EJVDS

3 STANDARD CHARACTERISTICS FOR REFERENCE (TA = + C, =.7 V, fin = 7 MHz, unless otherwise specified) Parameter Symbol Test Conditions Reference Unit Input rd Order Intercept Point IIP fin = 7 MHz, fin = 7 MHz dbm Isolation ISL 9 db Gain db Compression Input Power Pin ( db) 8 dbm STANDARD CHARACTERISTICS FOR REFERENCE (TA = + C, =.8 V, fin = 7 MHz, unless otherwise specified) Parameter Symbol Test Conditions Reference Unit Circuit Current ICC No Signal (VPS =.8 V). ma Power Gain GP Pin = dbm 9. db Noise Figure NF.8 db Input rd Order Intercept Point IIP fin = 7 MHz, fin = 7 MHz dbm Input Return Loss RLin db Output Return Loss RLout db Isolation ISL 9 db Gain db Compression Input Power Pin ( db) 9 dbm TEST CIRCUIT VCC pf pf. pf OUTPUT INPUT pf.7 nh VPS Data Sheet PU7EJVDS

4 TYPICAL CHARACTERISTICS (TA = + C, unless otherwise specified) Circuit Current ICC (ma) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 9 TA = +8 C C C RF = off Supply Voltage VCC (V) Circuit Current ICC (ma) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE 9 VCC =.7 V V RF = off 7 Operating Ambient Temperature TA ( C) CIRCUIT CURRENT vs. POWER-SAVING VOLTAGE CIRCUIT CURRENT vs. POWER-SAVING VOLTAGE Circuit Current ICC (ma) 9 TA = +8 C C C VCC =.7 V RF = off Circuit Current ICC (ma) 9 TA = +8 C C C VCC =.8 V RF = off Power-Saving Voltage VPS (V) Power-Saving Voltage VPS (V) POWER GAIN vs. FREQUENCY.8 NOISE FIGURE vs. FREQUENCY TA = C + C 8 +8 C =.7 V 7 Noise Figure NF (db).. TA = +8 C C.. C =.7 V. 7 Remark The graphs indicate nominal characteristics. Data Sheet PU7EJVDS

5 POWER GAIN vs. FREQUENCY.8 NOISE FIGURE vs. FREQUENCY TA = C + C 8 +8 C =.8 V 7 Noise Figure NF (db).. TA = +8 C C.. C =.8 V. 7 POWER GAIN vs. SUPPLY VOLTAGE NOISE FIGURE vs. SUPPLY VOLTAGE.8 8 TA = C + C +8 C fin = 7 MHz Noise Figure NF (db). fin = 7 MHz. TA = +8 C C.. C Supply Voltage VCC (V) Supply Voltage VCC (V) 8 POWER GAIN vs. OPERATING AMBIENT TEMPERATURE VCC =.7 V.8 V fin = 7 MHz 7 Operating Ambient Temperature TA ( C) Noise Figure NF (db) NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE VCC =.7 V.8 V fin = 7 MHz. 7 Operating Ambient Temperature TA ( C) Remark The graphs indicate nominal characteristics. Data Sheet PU7EJVDS

6 Output Power Pout (dbm) OUTPUT POWER vs. INPUT POWER =.7 V fin = 7 MHz Pin (db) = 7.9 dbm Input Power Pin (dbm) Output Power Pout (dbm) OUTPUT POWER vs. INPUT POWER =.8 V fin = 7 MHz Pin (db) = 8. dbm Input Power Pin (dbm) POWER GAIN vs. INPUT POWER POWER GAIN vs. INPUT POWER =.7 V fin = 7 MHz =.8 V fin = 7 MHz Pin (db) = 7.9 dbm Pin (db) = 8. dbm Input Power Pin (dbm) Input Power Pin (dbm) Output Power Pout (dbm) rd Order Intermodulation Distortion IM (dbm) OUTPUT POWER, IM vs. INPUT POWER + 8 =.7 V fin = 7 MHz fin = 7 MHz Pout IM IIP =. dbm Input Power Pin (dbm) Output Power Pout (dbm) rd Order Intermodulation Distortion IM (dbm) OUTPUT POWER, IM vs. INPUT POWER + 8 =.8 V fin = 7 MHz fin = 7 MHz Pout IM IIP =.7 dbm Input Power Pin (dbm) Remark The graphs indicate nominal characteristics. Data Sheet PU7EJVDS

7 Gain db Compression Input Power Pin ( db) (dbm) Gain db Compression Input Power Pin ( db) (dbm) GAIN db COMPRESSION INPUT POWER vs. SUPPLY VOLTAGE + C C fin = 7 MHz GAIN db COMPRESSION INPUT POWER vs. OPERATING AMBIENT TEMPERATURE TA = +8 C Supply Voltage VCC (V) VCC =.7 V.8 V fin = 7 MHz 7 Operating Ambient Temperature TA ( C) Input rd Order Intercept Point IIP (dbm) Output rd Order Intercept Point OIP (dbm) Input rd Order Intercept Point IIP (dbm) Output rd Order Intercept Point OIP (dbm) TA = +8 C IIP, OIP vs. SUPPLY VOLTAGE IIP OIP TA = C C + C + C fin = 7 MHz +8 C fin = 7 MHz Supply Voltage VCC (V) IIP, OIP vs. OPERATING AMBIENT TEMPERATURE VCC =.7 V OIP.8 V VCC =.7 V IIP.8 V VCC = VPS fin = 7 MHz fin = 7 MHz 7 Operating Ambient Temperature TA ( C) K FACTOR vs. FREQUENCY =.7 V K FACTOR vs. FREQUENCY =.8 V K factor K K factor K Frequency fin (GHz) Frequency fin (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU7EJVDS 7

8 S-PARAMETERS (TA = + C, =.7 V, monitored at connector on board) S FREQUENCY : 7 MHz.8 Ω. Ω S FREQUENCY : 7 MHz.8 Ω. Ω START. MHz STOP. MHz START. MHz STOP. MHz INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (db) Output Return Loss RLout (db) POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY Isolation ISL (db) 7 Remark The graphs indicate nominal characteristics. 8 Data Sheet PU7EJVDS

9 S-PARAMETERS (TA = + C, =.8 V, monitored at connector on board) S FREQUENCY : 7 MHz. Ω. Ω S FREQUENCY : 7 MHz. Ω. Ω START. MHz STOP. MHz START. MHz STOP. MHz INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (db) Output Return Loss RLout (db) POWER GAIN vs. FREQUENCY ISOLATION vs. FREQUENCY Isolation ISL (db) 7 Remark The graphs indicate nominal characteristics. Data Sheet PU7EJVDS 9

10 PACKAGE DIMENSIONS -PIN PLASTIC TSON (TN) (UNIT: mm) (Top View).±. (Side View) (Bottom View).±.7 (.) MIN. A A.±..±..± ±..7±. Remark A> ( ) : Reference value Data Sheet PU7EJVDS

11 NOTES ON CORRECT USE () Observe precautions for handling because of electro-static sensitive devices. () Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. () The bypass capacitor should be attached to VCC line. () Do not supply DC voltage to INPUT pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : C or below Time at peak temperature : seconds or less Time at temperature of C or higher : seconds or less Preheating time at to 8 C : ± seconds Maximum number of reflow processes : times Maximum chlorine content of rosin flux (% mass) :.%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) : C or below Time at peak temperature : seconds or less Preheating temperature (package surface temperature) : C or below Maximum number of flow processes : time Maximum chlorine content of rosin flux (% mass) :.%(Wt.) or below Partial Heating Peak temperature (terminal temperature) : C or below Soldering time (per side of device) : seconds or less Maximum chlorine content of rosin flux (% mass) :.%(Wt.) or below IR WS HS Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU7EJVDS

12 The information in this document is current as of March, 8. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) () "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. () "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E. -

SiGe:C LOW NOISE AMPLIFIER FOR GPS

SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The µpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics,

More information

3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form C3V

3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form C3V BIPOLAR ANALOG INTEGRATED CIRCUIT μpc3239tb 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μpc3239tb is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.

More information

SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS

SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS The PC8231TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc3223tb V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc3223tb is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc279tb 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µpc279tb is a silicon monolithic integrated circuit designed as

More information

DISCONTINUED PC3240TB BIPOLAR ANALOG INTEGRATED CIRCUIT 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

DISCONTINUED PC3240TB BIPOLAR ANALOG INTEGRATED CIRCUIT 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device

More information

DISCONTINUED PC3232TB BIPOLAR ANALOG INTEGRATED CIRCUIT 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATIONS

DISCONTINUED PC3232TB BIPOLAR ANALOG INTEGRATED CIRCUIT 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATIONS DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF

More information

5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form

5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF

More information

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) NPN SILICON GERMANIUM RF TRANSISTOR NESG331M NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M, 212 PKG) FEATURES The device is an ideal choice for

More information

BIPOLAR ANALOG INTEGRATED CIRCUITS

BIPOLAR ANALOG INTEGRATED CIRCUITS DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µpc275tb and µpc27tb are silicon monolithic integrated circuits

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc1675g GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µpc1675g is a silicon monolithic integrated circuit employing small package (4pins mini mold) and

More information

DISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION FEATURES APPLICATION

DISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION FEATURES APPLICATION DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using

More information

BIPOLAR ANALOG INTEGRATED CIRCUITS

BIPOLAR ANALOG INTEGRATED CIRCUITS DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µpc279tb 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc279tb is a silicon monolithic integrated circuits designed as 1st

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc278tb 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc278tb is a silicon monolithic integrated circuit designed as buffer

More information

DATA SHEET. X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form

DATA SHEET. X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.30 db TYP., Ga = 13.5 db TYP.

More information

13 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS

13 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS DESCRIPTION BIPOLAR DIGITAL INTEGRATED CIRCUIT GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS The is a silicon germanium (SiGe) monolithic integrated circuit designed as a divide by 4

More information

DISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATION

DISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATION DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc2709t 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc2709t is a silicon monolithic integrated circuit designed as 1st IF amplifier

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc326gr 5dB AGC AMP + VIDEO AMP DESCRIPTION The µpc326gr is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of

More information

WIDE BAND DPDT SWITCH

WIDE BAND DPDT SWITCH WIDE BAND DPDT SWITCH CMOS INTEGRATED CIRCUIT DESCRIPTION The is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc71, µpc7 GENERAL PURPOSE L-BAND DOWN CONVERTER ICs DESCRIPTION The µpc71/7 are Silicon monolithic ICs designed for L-band down converter. These ICs consist

More information

5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form

5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc322gr LOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV DESCRIPTION The µpc322gr is a silicon monolithic IC designed for use as IF down-converter for digital

More information

NPN SILICON RF TRANSISTOR 2SC4703

NPN SILICON RF TRANSISTOR 2SC4703 DATA SHEET NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The is designed for low distortion, low noise RF amplifier

More information

DATA SHEET. NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

DATA SHEET. NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR SC76 NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD -PIN THIN-TYPE SUPER MINIMOLD (M) FEATURES Ideal for low noise high-gain amplification

More information

GaAs INTEGRATED CIRCUIT

GaAs INTEGRATED CIRCUIT DATA SHEET GaAs INTEGRATED CIRCUIT μpg249t6x HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μpg249t6x is a GaAs MMIC high power SPDT (Single Pole Double Throw) switch which were designed for WiMAX.

More information

DATA SHEET. C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form

DATA SHEET. C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.35 db TYP., Ga = 13.5

More information

DATA SHEET N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER

DATA SHEET N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DATA SHEET LDMOS FIELD EFFECT TRANSISTOR N-CHANNEL SILICON POWER LDMOS FET FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The is an N-channel enhancement-mode lateral diffused MOS FET designed

More information

PC2747TB, PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS

PC2747TB, PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUITS 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS The PC2747TB, PC2748TB are silicon monolithic integrated circuits designed as amplifier

More information

DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DATA SHEET NPN SILICON RF TRANSISTOR SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The SC8 is a low supply voltage transistor designed

More information

DATA SHEET. NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05)

DATA SHEET. NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD -PIN THIN-TYPE SUPER MINIMOLD (M) FEATURES The device is an ideal choice for low noise,

More information

LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28

LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28 DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM091803S-28 N-CHANNEL SILICON POWER LDMOS FET FOR 180 W UHF-BAND PUSH-PULL POWER AMPLIFIER DESCRIPTION The NEM091803S-28 is an N-channel enhancement-mode lateral

More information

DATA SHEET. N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

DATA SHEET. N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DATA HEET LDMO FIELD EFFECT TRANITOR NE55410GR N-CHANNEL ILICON POWER LDMO FET FOR 2 W + 10 W VHF to L-BAND INGLE-END POWER AMPLIFIER DECRIPTION The NE55410GR is an N-channel enhancement-mode LDMO FET

More information

DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN

DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION GaAs INTEGRATED CIRCUIT The is a GaAs MMIC DPDT (Double Pole Double Throw) switch which was developed for 2.4 GHz and 6 GHz dual-band

More information

NPN SILICON RF TRANSISTOR 2SC3355

NPN SILICON RF TRANSISTOR 2SC3355 DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low

More information

DATA SHEET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The is suitable for converter of ECM. General-purpose product.

More information

Part Number Order Number Package Marking Supplying Form G4Y

Part Number Order Number Package Marking Supplying Form G4Y GaAs INTEGRATED CIRCUIT PG2176T5N 50 TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The PG2176T5N is a GaAs MMIC 50 termination type high power SPDT (Single Pole Double Throw) switch which

More information

GaAs Integrated Circuit for L, S-Band SPDT Switch PHASE-OUT

GaAs Integrated Circuit for L, S-Band SPDT Switch PHASE-OUT Preliminary GaAs Integrated Circuit for L, S-Band SPDT Switch Data Sheet DESCRIPTION The is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and

More information

μ PC451GR-9LG, μ PC324GR-9LG

μ PC451GR-9LG, μ PC324GR-9LG DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC45GR-9LG, μ PC4GR-9LG SINGLE POWER SUPPLY QUAD OPERATIONAL AMPLIFIERS DESCRIPTION The μ PC45GR-9LG, μ PC4GR-9LG are quad operational amplifiers which

More information

JUNCTION FIELD EFFECT TRANSISTOR 2SK660

JUNCTION FIELD EFFECT TRANSISTOR 2SK660 DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES Compact

More information

GaAs INTEGRATED CIRCUIT

GaAs INTEGRATED CIRCUIT DATA SHEET GaAs INTEGRATED CIRCUIT µpg29tb L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µpg29tb is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or

More information

JUNCTION FIELD EFFECT TRANSISTOR 2SK2552

JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The is suitable for converter of ECM. FEATURES Compact package

More information

4-PIN ULTRA SMALL FLAT-LEAD, LOW C R (6.3 pf Ω) 1-ch Optical Coupled MOS FET

4-PIN ULTRA SMALL FLAT-LEAD, LOW C R (6.3 pf Ω) 1-ch Optical Coupled MOS FET 4-PIN ULTRA SMALL FLAT-LEAD, LOW C R (6.3 pf Ω) 1-ch Optical Coupled MOS FET Solid State Relay OCMOS FET NEPOC Series DESCRIPTION The is a low output capacitance solid state relay containing a GaAs LED

More information

4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 1-ch Optical Coupled MOS FET

4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 1-ch Optical Coupled MOS FET Solid State Relay OCMOS FET 4-PIN SOP 4 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 1-ch Optical Coupled MOS FET NEPOC Series DESCRIPTION The is an optically coupled element that combines a GaAs infrared LED

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC1251GR-9LG, μ PC1251MP-KAA, μ PC358GR-9LG

BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC1251GR-9LG, μ PC1251MP-KAA, μ PC358GR-9LG DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT SINGLE POWER SUPPLY DUAL OPERATIONAL AMPLIFIERS DESCRIPTION The are dual operational amplifiers which are designed to operate for a single power supply.

More information

SILICON POWER TRANSISTOR 2SC3632-Z

SILICON POWER TRANSISTOR 2SC3632-Z DATA SHEET SILICON POWER TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES High

More information

Part Number Order Number Package Marking Supplying Form PD5750T7D-E4A PD5750T7D-E4A-A 6-pin WLBGA (T7D) (Pb-Free)

Part Number Order Number Package Marking Supplying Form PD5750T7D-E4A PD5750T7D-E4A-A 6-pin WLBGA (T7D) (Pb-Free) SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION Data Sheet The PD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.

More information

DATA SHEET SWITCHING N-CHANNEL MOS FET

DATA SHEET SWITCHING N-CHANNEL MOS FET DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1582 SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1582, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of

More information

MOS FIELD EFFECT TRANSISTOR 2SJ205

MOS FIELD EFFECT TRANSISTOR 2SJ205 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ205, P-channel vertical type MOS FET, is a switching device which can be driven by 3 V power supply. As

More information

BIPOLAR DIGITAL INTEGRATED CIRCUITS

BIPOLAR DIGITAL INTEGRATED CIRCUITS DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS PPB506GV, PPB507GV 3GHz INPUT DIVIDE BY 56, 8, 64 PRESCALER IC FOR ANALOG DBS TUNERS The PPB506GV and PPB507GV are 3.0 GHz input, high division silicon prescaler

More information

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre =

More information

DATA SHEET SWITCHING N-CHANNEL MOS FET 2.0± ±0.1

DATA SHEET SWITCHING N-CHANNEL MOS FET 2.0± ±0.1 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK8 SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK8 is an N -channel vertical type MOS FET which can be driven by 2. V power supply. As the 2SK8 is driven by low

More information

DATA SHEET. 4-PIN SOP, 0.6 Ω LOW ON-STATE RESISTANCE 600 ma CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET

DATA SHEET. 4-PIN SOP, 0.6 Ω LOW ON-STATE RESISTANCE 600 ma CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET DATA SHEET 4-PIN SOP,.6 Ω LOW ON-STATE RESISTANCE 6 ma CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Solid State Relay OCMOS FET PS726-1A NEPOC Series DESCRIPTION The PS726-1A is a low on-state

More information

MOS FIELD EFFECT TRANSISTOR 2SK3664

MOS FIELD EFFECT TRANSISTOR 2SK3664 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The

More information

4-PIN SOP, 1.1 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET

4-PIN SOP, 1.1 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET 4-PIN SOP, 1.1 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET Solid State Relay OCMOS FET NEPOC Series DESCRIPTION The is a low output capacitance solid state relay containing a GaAs LED

More information

MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR DATA SHEET MOS FIELD EFFECT TRANSISTOR μpa6ta N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The μpa6ta is a switching device which can be driven directly by a 2.5-V power source.

More information

DATA SHEET 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS

DATA SHEET 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc79tb 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS The µpc79tb is a silicon monolithic integrated circuit designed as

More information

MOS FIELD EFFECT TRANSISTOR 2SK3663

MOS FIELD EFFECT TRANSISTOR 2SK3663 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The

More information

DATA SHEET. X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DATA SHEET. X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction

More information

DATA SHEET. 6, 8-PIN DIP, 200 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET

DATA SHEET. 6, 8-PIN DIP, 200 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET DATA SHEET Solid State Relay OCMOS FET PS7122-1A-2A,PS7122L-1A,-2A 6, 8-PIN DIP, 2 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET DESCRIPTION The PS7122-1A, -2A and PS7122L-1A, -2A are solid state

More information

LOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV

LOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV BIPOLAR ANALOG INTEGRATED CIRCUIT PC3220GR LOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV DESCRIPTION The PC3220GR is a silicon monolithic IC designed for use as IF down-converter for digital CATV.

More information

SILICON TRANSISTOR 2SC4227

SILICON TRANSISTOR 2SC4227 DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4227 DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF

More information

8-PIN SOP, 260 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 2-ch Optical Coupled MOS FET

8-PIN SOP, 260 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 2-ch Optical Coupled MOS FET 8-PIN SOP, 26 V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 2-ch Optical Coupled MOS FET Solid State Relay OCMOS FET PS7221A-2A NEPOC Series DESCRIPTION The PS7221A-2A is a solid state relay containing

More information

L, S-BAND SPDT SWITCH

L, S-BAND SPDT SWITCH DESCRIPTION The µpg8tk is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate control switching

More information

3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES HIGH GAIN: db at 9 to MHz Typical HIGH OUTPUT POWER: PSAT = +. dbm at 9 MHz + dbm at MHz LOW BIAS VOLTAGE: 3. V Typical,. V Minimum SUPER SMALL PACKAGE: SOT-33 TAPE AND REEL PACKAGING OPTION AVAILABLE

More information

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET. The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET. The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK5 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK5 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Low

More information

HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES PHOTOCOUPLER PS2506-1,PS2506L-1 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2506-1 and PS2506L-1 are optically coupled isolators

More information

Old Company Name in Catalogs and Other Documents

Old Company Name in Catalogs and Other Documents To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 21, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over

More information

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure, high associated gain and middle output power NF =.3 db TYP., Ga

More information

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4226 DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc275tb MIXER+OSCILLATOR SILICON MMIC FOR FREQUENCY DOWNCONVERTER OF L BAND WIRELESS RECEIVER DESCRIPTION The µpc275tb is a silicon monolithic integrated circuit

More information

PS7113-1A,-2A,PS7113L-1A,-2A

PS7113-1A,-2A,PS7113L-1A,-2A Solid State Relay OCMOS FET PS7113-1A,-2A,PS7113L-1A,-2A 6, 8-PIN DIP, 1 V BREAK DOWN VOLTAGE 35 ma CONTINUOUS LOAD CURRENT 1-ch, 2-ch Optical Coupled MOS FET NEPOC Series DESCRIPTION The PS7113-1A, -2A

More information

8-PIN DIP, 250 V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET

8-PIN DIP, 250 V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET Solid State Relay OCMOS FET PS7122A-1C,PS7122AL-1C DESCRIPTION 8-PIN DIP, V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET NEPOC Series The PS7122A-1C and PS7122AL-1C are transfer

More information

PHOTOCOUPLER PS2502-1,-4,PS2502L-1,-4

PHOTOCOUPLER PS2502-1,-4,PS2502L-1,-4 PHOTOCOUPLER PS2502-1,-4,PS2502L-1,-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2502-1, -4 and PS2502L-1, -4 are optically coupled isolators

More information

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES The device is an ideal choice for low

More information

MOS FIELD EFFECT TRANSISTOR 3SK206

MOS FIELD EFFECT TRANSISTOR 3SK206 DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK26 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES Suitable for use as RF amplifier in UHF TV tuner. Low

More information

MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2452 is a switching device which can be driven directly by a 2.5 V power source.

More information

DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc271tb 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER The µpc271tb is a silicon monolithic integrated circuit designed as PA driver

More information

DATA SHEET NPN SILICON POWER TRANSISTOR. 55 to +150 C 150 C Maximum

DATA SHEET NPN SILICON POWER TRANSISTOR. 55 to +150 C 150 C Maximum DATA SHEET NPN SILON POWER TRANSISTOR 2SD882 NPN SILON POWER TRANSISTOR DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC

More information

C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET. Drop-In Replacement: CE3514M4

C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET. Drop-In Replacement: CE3514M4 FEATURES HETERO JUNCTION FIELD EFFECT TRANSISTOR C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET Super low noise figure and high associated gain NF = 0.45 db TYP., Ga = 12.0 db TYP.

More information

DATA SHEET. Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation

DATA SHEET. Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain S21e 2 =.5 dbtyp. @,

More information

BIPOLAR ANALOG INTEGRATED CIRCUITS PC2709TB

BIPOLAR ANALOG INTEGRATED CIRCUITS PC2709TB DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PC279TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC279TB is asilicon monolithic integrated circuits designed as 1st IF

More information

DATA SHEET NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

DATA SHEET NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD The NE46234 / 2SC4703 is designed

More information

DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PC279TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER PC279TB is asilicon monolithic integrated circuits designed as 1st IF

More information

MOS FIELD EFFECT TRANSISTOR 3SK252

MOS FIELD EFFECT TRANSISTOR 3SK252 DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK22 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low VDD Use : (VDS = 3. V) Driving Battery Low Noise

More information

1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1

1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1 The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes

More information

SILICON POWER MOS FET NE A

SILICON POWER MOS FET NE A SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The is an N-channel silicon power laterally diffused MOS FET specially designed as

More information

DISCONTINUED. Preliminary. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth and a/b/g DESCRIPTION FEATURES APPLICATIONS

DISCONTINUED. Preliminary. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth and a/b/g DESCRIPTION FEATURES APPLICATIONS μpg243tz GaAs Integrated Circuit SP3T Switch for Bluetooth and 82.a/b/g DESCRIPTION Preliminary Data Sheet The μpg243tz is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This

More information

PHOTOCOUPLER PS2561D-1,PS2561DL-1 PS2561DL1-1,PS2561DL2-1

PHOTOCOUPLER PS2561D-1,PS2561DL-1 PS2561DL1-1,PS2561DL2-1 PRELIMINARY DATA SHEET PHOTOCOUPLER PS2561D-1,PS2561DL-1 PS2561DL1-1,PS2561DL2-1 DIP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110 C NEPOC Series DESCRIPTION The PS2561D-1 is an optically coupled isolator

More information

DISCONTINUED PG2413T6Z. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth TM and b/g DESCRIPTION FEATURES APPLICATIONS

DISCONTINUED PG2413T6Z. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth TM and b/g DESCRIPTION FEATURES APPLICATIONS GaAs Integrated Circuit SP3T Switch for Bluetooth TM and 802.11b/g DESCRIPTION Data Sheet The PG2413T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate

More information

DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc278tb V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER The µpc278tb is a silicon monolithic integrated circuit designed as buffer

More information

MOS FIELD EFFECT TRANSISTOR 3SK223

MOS FIELD EFFECT TRANSISTOR 3SK223 DATA SHEET MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES The Characteristic of Cross-Modulation is good. CM = 1 dbµ

More information

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form FEATURES HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Super low noise figure, high associated gain and middle output power NF = 0.3 db TYP.,

More information

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET DATA SHEET MOS FIELD EFFECT TRANSISTOR NPNPUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NPNPUG is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for high

More information

DATA SHEET. on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

DATA SHEET. on-chip resistor NPN silicon epitaxial transistor For mid-speed switching DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hfe resistor incorporating dumper diode in collector

More information

MOS FIELD EFFECT TRANSISTOR 3SK230

MOS FIELD EFFECT TRANSISTOR 3SK230 DATA SHEET MOS FIELD EFFECT TRANSISTOR RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES The Characteristic of Cross-Modulation is good. CM =

More information

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK22 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK22 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

More information

DATA SHEET NE68030 / 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

DATA SHEET NE68030 / 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE683 / SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD The NE683 / SC8 is a low supply voltage

More information

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics,

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc4 LOW POWER QUAD OPERATIONAL AMPLIFIER DESCRIPTION The µpc4 is a quad operational amplifier which is designed to operate from a single power supply over

More information