AdLib OCR Evaluation THREE TERMINAL POSITIVE VOLTAGE REGULATORS

AdLib OCR Evaluation THREE TERMINAL POSITIVE VOLTAGE REGULATORS

BIPOLAR ANALOG INTEGRATED CIRCUITS ypc78ma SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ppc78mooa series are monolithic three terminal positive regulators which employ internally current

AdLib OCR Evaluation BIPOLAR ANALOG INTEGRATED CIRCUIT THREE TERMINAL POSITIVE VOLTAGE REGULATORS

BIPOLAR ANALOG INTEGRATED CIRCUIT ypc78loo SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ThepPC781- series are monolithicthree terminal positive regulatorswhich employ internally current

NEC NE33284A ~I-I~ u ~ I c::j I I= 1-- HETERO JUNCTION FIELD EFFECT TRANSISTOR DATA SHEET. L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DATA SHEET HETERO JUNCTON FELD EFFECT TRANSSTOR L to X BAND SUPER LOW NOSE AMPLFER N-CHANNEL HJ-FET DESCRPTON The is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

BIPOLAR ANALOG INTEGRATED CIRCUIT

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc4 LOW POWER QUAD OPERATIONAL AMPLIFIER DESCRIPTION The µpc4 is a quad operational amplifier which is designed to operate from a single power supply over

LINEAR INTEGRATED CIRCUITS

LNEAR NTEGRATED CRCUTS 3-TERMNAL POSTVE VOLTAGE REGULATORS OUTPUT CURRENT UP TO 1.5A OUTPUT VOLTAGES OF 5; 6; 8; 12; 15; 18; 20; 24V THERMAL OVERLOAD PROTECTON SHORT CRCUT PROTECTON OUTPUT TRANSSTOR SOA

DATA SHEET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The is suitable for converter of ECM. General-purpose product.

MOS FIELD EFFECT TRANSISTOR 3SK206

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK26 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES Suitable for use as RF amplifier in UHF TV tuner. Low

JUNCTION FIELD EFFECT TRANSISTOR 2SK660

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES Compact

JUNCTION FIELD EFFECT TRANSISTOR 2SK2552

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The is suitable for converter of ECM. FEATURES Compact package

BIPOLAR ANALOG INTEGRATED CIRCUIT

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc1675g GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µpc1675g is a silicon monolithic integrated circuit employing small package (4pins mini mold) and

SILICON POWER TRANSISTOR 2SC3632-Z

DATA SHEET SILICON POWER TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES High

SELF-EXCITED INVERTER for EL LIGHTS TH SERIES

DATA SHEET SEL-EXCTED NVERTER for EL LGHTS TH SERES LOW PROLE (Plastic case or non-case type) The TH series has been designed to obtain optimum results with NEC EL Lights. EATURES Capacitive load inverter

Designated client product

Designated client product This product will be discontinued its production in the near term. And it is provided for customers currently in use only, with a time limit. t can not be available for your new

DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET SILICON TRANSISTOR SC6 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hfe = TYP. (VCE = 6. V, IC =. ma) High Voltage: VCEO

SILICON TRANSISTOR 2SC4227

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4227 DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF

MOS FIELD EFFECT TRANSISTOR 3SK230

DATA SHEET MOS FIELD EFFECT TRANSISTOR RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES The Characteristic of Cross-Modulation is good. CM =

MC78XXE. 3-Terminal 1A Positive Voltage Regulator. Features. Description. Internal Block Digram.

-Terminal A Positive Voltage Regulator www.fairchildsemi.com Features Current up to A Voltages of 5, V Thermal Overload Protection Short Circuit Protection Transistor Safe Operating Area Protection Description

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4226 DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre =

MOS FIELD EFFECT TRANSISTOR 3SK223

DATA SHEET MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES The Characteristic of Cross-Modulation is good. CM = 1 dbµ

MC78XX/LM78XX. 3-terminal 1A positive voltage regulator. Features. Description. Internal Block Digram.

www.fairchildsemi.com 3-terminal 1A positive voltage regulator Features Current up to 1A Voltages of 5, 6, 8, 9, 10, 11, 12, 15, 18, 24V Thermal Overload Protection Short Circuit Protection Transistor

MOS INTEGRATED CIRCUIT Bipolar Analog Integrated Circuit

DATA SHEET MOS INTEGRATED CIRCUIT Bipolar Analog Integrated Circuit µpc TIMER CIRCUIT The µpc is a powerful integrated circuit. Adding a few external parts to it can turn it into various types of timing

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DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES Low VCE(sat) VCE(sat) = 5 V Max (@lc/lb = 1.0 A/50 ma) High DC Current Gain hef = 150

TK716xx LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS DESCRIPTION ORDERING INFORMATION TK716 SCL TK716 S I L TK716 SCL H

LOW DROP OLTAGE REGULATOR FEATURES Available in ± 2. % or ± 1. % Output Tolerance Active High On/Off Control ery Low Quiescent Current ery Low Dropout oltage Reverse Bias Protection Miniature Package (SOT23-5)

MOS FIELD EFFECT TRANSISTOR 3SK252

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK22 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low VDD Use : (VDS = 3. V) Driving Battery Low Noise

DATA SHEET. Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation

DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain S21e 2 =.5 dbtyp. @,

MOS FIELD EFFECT TRANSISTOR 2SJ353

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the

BIPOLAR ANALOG INTEGRATED CIRCUIT

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc326gr 5dB AGC AMP + VIDEO AMP DESCRIPTION The µpc326gr is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 4.0 A

DATA SHEET SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices

μ PC451GR-9LG, μ PC324GR-9LG

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC45GR-9LG, μ PC4GR-9LG SINGLE POWER SUPPLY QUAD OPERATIONAL AMPLIFIERS DESCRIPTION The μ PC45GR-9LG, μ PC4GR-9LG are quad operational amplifiers which

2SA1743 SILICON POWER TRANSISTOR DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING. PACKAGE DRAWING (UNIT: mm) FEATURES

DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hfe at low

MOS INTEGRATED CIRCUIT

DATA SHEET MOS INTEGRATED CIRCUIT µpd6345 8 BIT SERIAL IN/PARALLEL OUT DRIVER The µpd6345 is a monolithic Bi-CMOS integrated Circuit designed to drive LED, Solenoid and Relay. This device consists of an

BIPOLAR ANALOG INTEGRATED CIRCUIT μ PC1251GR-9LG, μ PC1251MP-KAA, μ PC358GR-9LG

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT SINGLE POWER SUPPLY DUAL OPERATIONAL AMPLIFIERS DESCRIPTION The are dual operational amplifiers which are designed to operate for a single power supply.

MOS FIELD EFFECT TRANSISTOR 2SK3377

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK3377 DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

MOS FIELD EFFECT POWER TRANSISTORS 2SJ495

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching

DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING ±8.

DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hfe at low

DATA SHEET. X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction

MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µpa67t N-CHANNEL MOS FET ARRAY FOR SWITCHING The µpa67t is a super-mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves

MOS FIELD EFFECT POWER TRANSISTORS

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µpa1712 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications

MOS FIELD EFFECT TRANSISTOR 2SK2159

DATA SHEET MOS FIELD EFFECT TRANSISTOR SK59 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The SK59 is an N-channel vertical type MOS FET featuring an operating voltage as low as.5 V. Because it can be driven

C78L00 SERIES CMOS POSITIVE VOLTAGE REGULATORS VERY LOW DROP - VERY LOW QUIESCENT. LOW CURRENT CONSUMPTION (TYP. 19µA) WIDE OPERATING VOLTAGE RANGE

C78L00 SERIES CMOS POSITIVE VOLTAGE REGULATORS VERY LOW DROP - VERY LOW QUIESCENT LOW CURRENT CONSUMPTION (TYP. 19µA) WIDE OPERATING VOLTAGE RANGE. VERY LOW DROP OUT VOLTAGE (V i -V o < 0.2 V, I o = 40

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

L4940 series VERY LOW DROP 1.5 A REGULATORS

L4940 series VERY LOW DROP 1.5 A REGULATORS PRECISE 5 V, 8.5 V, 10 V, 12 V OUTPUTS LOW DROPOUT VOLTAGE (500 typ at 1.5A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY

KA76L05. Low Dropout Voltage Regulator. Description. Features. Internal Block Diagram.

Low Dropout Voltage Regulator www.fairchildsemi.com Features Limited input voltage and high efficiency. Internal thermal over load protection. 6V load dump protection. Output current up to.1a. Description

DATA SHEET. on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hfe resistor incorporating dumper diode in collector

BIPOLAR ANALOG INTEGRATED CIRCUIT

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc71, µpc7 GENERAL PURPOSE L-BAND DOWN CONVERTER ICs DESCRIPTION The µpc71/7 are Silicon monolithic ICs designed for L-band down converter. These ICs consist

2SK2141 MOS FIELD EFFECT TRANSISTOR DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS FEATURES

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching

SILICON MMIC QUADRATURE MODULATOR

FEATURES WDE SUPPLY VOLTAGE RANGE: 2.7 ~ 5.5 V BROADBAND OPERATON: MODOUT = 00-400 MHz, / = DC to 0 MHz NTERNAL 90 PHASE SHFTER POWER SAVE FUNCTON LOW POWER CONSUMPTON: 6 ma Typ. @ 3 V SMALL SSOP 6 PACKAGE

2SK2483 MOS FIELD EFFECT TRANSISTOR DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION FEATURES

DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SK8 DESCRIPTION The SK8 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

THYRISTORS 5P4M,5P6M DATA SHEET. 5 A (8 Ar.m.s.) THYRISTOR. PACKAGE DRAWING (Unit: mm) FEATURES APPLICATIONS <R>

DATA SHEET THYRISTORS 5P4M,5P6M 5 A (8 Ar.m.s.) THYRISTOR The 5P4M and 5P6M are a P gate all diffused mold type Thyristor granted 5 A On-state Average Current (TC = 103 C). PACKAGE DRAWING (Unit: mm) FEATURES

MOS FIELD EFFECT TRANSISTOR 2SJ205

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ205, P-channel vertical type MOS FET, is a switching device which can be driven by 3 V power supply. As

DATA SHEET. 6, 8-PIN DIP, 200 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET

DATA SHEET Solid State Relay OCMOS FET PS7122-1A-2A,PS7122L-1A,-2A 6, 8-PIN DIP, 2 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET DESCRIPTION The PS7122-1A, -2A and PS7122L-1A, -2A are solid state

DATA SHEET NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 15 A

DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching,

Dual high slew rate operational amplifier

Dual high slew rate operational amplifier BA6 / BA6F / BA6N The BA6, BA6F, and BA6N are dual operational amplifiers which achieve approximately twice the high output current of the BA, as well as featuring

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

TOSHIBA MOS MEMORY PRODUCTS TMM20 I 6AP- I 0 BLOCK DIAGRAM ~,--- 0: UJ A, ~ ~ 0 f=> U UJ -::"" ~ ;: 0. A, v- A 7. ::f~ ~"I '""

MOS MEMORY PRODUCTS 2,048 WORD x 8 BT STATC RAM TMM20 6AP-90 TMM20 6AP- 0 DESCRPTON TMM20 6AP- 2 TMM20 6AP- 5 The TMM2016AP is a 16,384 bits high speed and low power static random access memory organized

MOS FIELD EFFECT TRANSISTOR 2SK3663

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The

KA378R33. Low Dropout Voltage Regulator. Features. Description. Internal Block Diagram.

www.fairchildsemi.com KA378R33 Low Dropout Voltage Regulator Features 3A / 3.3V Output low dropout voltage regulator TO22 Full-Mold package (4PIN) Overcurrent protection, Thermal shutdown Overvoltage protection,

MOS FIELD EFFECT TRANSISTOR 2SJ462

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ462 is a switching device which can be driven directly by an IC operating

MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA98 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µpa98 is a switching device, which can be driven directly by a 4. V power source. This

MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK25, 2SK25-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK25 is N-Channel MOS Field Effect Transistor designed for high voltage switching

2SK2369/2SK2370 MOS FIELD EFFECT TRANSISTORS DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 查询 K2370 供应商 DESCRIPTION FEATURES

查询 K237 供应商 DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK237 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK237 is N-Channel MOS Field Effect Transistor designed for

DATA SHEET SWITCHING N-CHANNEL MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1582 SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK1582, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of

Quad operational amplifier

Quad operational amplifier BA7 / BA7F The BA7 and BA7F are monolithic ICs with four operational amplifiers featuring internal phase compensation mounted on a single silicon chip. Either a dual or single

MOS FIELD EFFECT TRANSISTOR 2SK3577

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3577 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3577 is a switching device which can be driven directly by a 2.5 V power source. The

DATA SHEET SWITCHING N-CHANNEL MOS FET 2.0± ±0.1

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK8 SWITCHING N-CHANNEL MOS FET DESCRIPTION The 2SK8 is an N -channel vertical type MOS FET which can be driven by 2. V power supply. As the 2SK8 is driven by low

MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The is a switching device, which can be driven directly by a 2.5 V power source. This device features

LDL A high PSRR low-dropout linear voltage regulator. Applications. Description. Features

1.2 A high PSRR low-dropout linear voltage regulator Datasheet - production data Applications Consumer Industrial SMPS Motherboard P.O.L. DC-DC post-regulation Features Input voltage from 2.5 V to 18 V

MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR μpa6ta N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The μpa6ta is a switching device which can be driven directly by a 2.5-V power source.

L78S00 series. 2A Positive voltage regulators. Feature summary. Description. Schematic diagram

2A Positive voltage regulators Feature summary Output current to 2A Output voltages of 5; 7.5; 9; 10; 12; 15; 18; 24V Thermal overload protection Short circuit protection Output transition SOA protection

TL780 SERIES POSITIVE-VOLTAGE REGULATORS

±1% Output Tolerance at ±2% Output Tolerance Over Full Operating Range Thermal Shutdown description Internal Short-Circuit Current Limiting Pinout Identical to µa7800 Series Improved Version of µa7800

MOS FIELD EFFECT TRANSISTOR 2SK3664

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took

BIPOLAR ANALOG INTEGRATED CIRCUIT

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc494 SWITCHING REGULATOR CONTROL CIRCUIT DESCRIPTION The µpc494 is an inverter control unit which provides all the control circuitry for PWM type switching

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April st,, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM78XX Series Voltage Regulators General Description Connection Diagrams

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April st,, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 21, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over

BIPOLAR ANALOG INTEGRATED CIRCUIT

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc279tb 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µpc279tb is a silicon monolithic integrated circuit designed as

BIPOLAR DIGITAL INTEGRATED CIRCUITS

DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS PPB506GV, PPB507GV 3GHz INPUT DIVIDE BY 56, 8, 64 PRESCALER IC FOR ANALOG DBS TUNERS The PPB506GV and PPB507GV are 3.0 GHz input, high division silicon prescaler

500mA Ultra Low Dropout Voltage Regulator With Inhibit Function

500mA Ultra Low Dropout Voltage Regulator With Inhibit Function DESCRIPTION The TS2938 series of fixed-voltage monolithic micropower voltage regulators is designed for a wide range of applications. This

TL783 HIGH-VOLTAGE ADJUSTABLE REGULATOR

HIGH-VOLTAGE USTABLE REGULATOR Output Adjustable From 1.25 V to 125 V When Used With an External Resistor Divider 7-mA Output Current Full Short-Circuit, Safe-Operating-Area, and Thermal-Shutdown Protection.1%/V

TS mA Ultra Low Dropout Voltage Regulator

TO-220 TO-263 (D 2 PAK) TO-252 (DPAK) SOT-223 Pin Definition: 1. Input 2. Ground 3. Output General Description TS2937 of fixed-voltage monolithic micro-power voltage regulators is designed for a wide range

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR NPNPUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NPNPUG is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for high

DATA SHEET SWITCHING P-CHANNEL POWER MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION

MOS FIELD EFFECT TRANSISTOR µ PA2700GR

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET MOS FIELD EFFECT TRANSISTOR µ PA7GR DESCRIPTION The µpa7gr is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications

KA378R05. Low Dropout Voltage Regulator. Features. Description. Internal Block Diagram.

KA78R5 Low Dropout Voltage Regulator www.fairchildsemi.com Features A / 5V Output low dropout voltage regulator TO Full-Mold package (PIN) Overcurrent protection, Thermal shutdown Overvoltage protection,

SC mA Low Dropout Positive Voltage Regulator. POWER MANAGEMENT Description. Features. Applications. Typical Application Circuits

Description The SC1202 series of high performance positive voltage regulators are designed for use in applications requiring low dropout performance at full rated current. Additionally, the SC1202 series

3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form C3V

BIPOLAR ANALOG INTEGRATED CIRCUIT μpc3239tb 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μpc3239tb is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.

DATA SHEET SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK38 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK38 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING

Old Company Name in Catalogs and Other Documents

To our customers, Old Company Name in Catalogs and Other Documents On April st, 2, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over

DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK25,25-Z SWITCHING N-CHANNEL POWER MOS FET Description The 2SK25 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. Features

LM317M. 3-Terminal 0.5A Positive Adjustable Regulator. Features. Description. Internal Block Diagram.

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