NPN Medium Power Transistor (Switching)

Size: px
Start display at page:

Download "NPN Medium Power Transistor (Switching)"

Transcription

1 UMT2222A / SST2222A / Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / Features 1) BCEO > 4 (IC=mA) 2) Complements the UMT297A / SST297A / MMST297A. Package, marking, and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT2222A UMT3 T6 3 SST2222A SST3 T116 3 SMT3 T146 3 Dimensions (Unit : mm) UMT2222A ROHM : UMT3 EIAJ : SC-7 SST2222A ROHM : SST3 Absolute maximum ratings (Ta = 25 C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector UMT2222A,SST2222A, Collector power dissipation SST2222A Junction temperature Storage temperature When mounted on a 7 x 5 x.6 mm ceramic board Symbol CBO CEO EBO IC PC Tj Tstg Limits to +15 Unit A W W C C ROHM : SMT3 EIAJ : SC-59 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff Emitter cutoff BCBO BCEO BEBO ICBO IEBO na na IC =µa IC =ma IE =µa CB = 6 EB = 3.3 IC/IB =15mA/15mA Collector-emitter saturation voltage CE(sat) 1 IC/IB =5mA/5mA Base-emitter saturation voltage BE(sat) IC/IB =15mA/15mA 2 IC/IB =5mA/5mA 35 CE =, IC =.1mA 5 CE =, IC =1mA 75 CE =, IC DC transfer ratio =ma hfe 5 CE =1, IC =15mA 3 CE =, IC =15mA 4 CE =, IC =5mA Transition frequency Output capacitance ft Cob 3 8 MHz pf CE =2, IC =2mA, f =MHz CB =, f =khz Emitter input capacitance Cib 25 pf EB =.5, f =khz Delay time td ns CC =3, BE(OFF) =.5, IC =15mA, IB1 =15mA Rise time tr 25 ns CC =3, BE(OFF) =.5, IC =15mA, IB1 =15mA Storage time tstg 225 ns CC =3, IC =15mA, IB1 =IB2 =15mA Fall time tf 6 ns CC =3, IC =15mA, IB1 =IB2 =15mA 1/3

2 Transistors UMT2222A / SST2222A / Electrical characteristic curves DC CURRENT GAIN : hfe CE= 1 IB=µA 5 COLLECTOR-EMITTER OLTAGE : CE() Fig.1 Grounded emitter output characteristics.1 1. Fig.3 DC gain vs. collector (Ι) COLLECTOR EMITTER SATURATION OLTAGE : CE(sat)() IC / IB= 1. CE= DC CURRENT GAIN : hfe Ta=125 C 25 C 55 C.1 1. Fig.2 Collector-emitter saturation voltage vs. collector Fig.4 DC gain vs. collector (ΙΙ) AC CURRENT GAIN : hfe CE= f=1khz.1 1. Fig.5 AC gain vs. collector BASE EMITTER SATURATION OLTAGE : BE(sat)() IC / IB= 1. Fig.6 Base-emitter saturation voltage vs. collector 2/3

3 Transistors UMT2222A / SST2222A / BASE EMITTER OLTAGE : BE(ON)() CE= 1 Fig.7 Grounded emitter propagation characteristics TURN ON TIME : ton(ns) CC=3 IC / IB= 1. Fig.8 Turn-on time vs. collector RISE TIME : tr(ns) 5 CC=3 IC / IB= 5 1. Fig.9 Rise time vs. collector CC=3 IC=IB1=IB2 CC=3 IC=IB1=IB2 f=1mhz STORAGE TIME : Ts(ns) FALL TIME : tf(ns) CAPACITANCE(pF) Cib Cob 1. Fig. Storage time vs. collector 1. Fig.11 Fall time vs. collector REERSE BIAS OLTAGE() Fig.12 Input / output capacitance vs. voltage COLLECTOR-EMITTER OLTAGE : CE() MHz 25MHz 3MHz 2MHz 1 25MHz.1 1 Fig.13 Gain bandwidth product CURRENT GAIN-BANDWIDTH PRODUCT(MHz) CE= 1. Fig.14 Gain bandwidth product vs. collector 3/3

4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co.jp Copyright 27 ROHM CO.,LTD. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto , Japan TEL : FAX : Appendix1-Rev2.

5 Mouser Electronics Authorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: T146 SST2222AT116 UMT2222AT6

NPN General Purpose Transistor

NPN General Purpose Transistor UMT39 / SST39 / MMST39 Transistors NPN General Purpose Transistor UMT39 / SST39 / MMST39 Features 1) BCEO > (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39. Dimensions (Unit : mm) UMT39 ROHM : UMT3

More information

Power management (dual transistors)

Power management (dual transistors) Power management (dual transistors) 2SA208 and DTC44EE are housed independently in a UMT package. Application Power management circuit Dimensions (Units : mm) UMT6 Features ) Power switching circuit in

More information

Power management (dual transistors)

Power management (dual transistors) Power management (dual transistors) SC8 and SK39 are housed independently in a UMT package. Application Power management circuit Dimensions (Units : mm) Features ) Power switching circuit in a single package.

More information

NPN General Purpose Transistor

NPN General Purpose Transistor NPN General Purpose Transistor Features 1) BCEO < 45 (IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) Package, marking, and Packaging specifications Part No. Packaging type SST3 Marking

More information

NPN General Purpose Transistor

NPN General Purpose Transistor NPN General Purpose Transistor!Features 1) BCEO > 4 (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39 / 2N39.!External dimensions (Units : mm) UMT394 ROHM : UMT3 EIAJ : SC7 2.±.2 1.3±.1...3 1.2±.1 2.1±.1.9±.1.2.7±.1.1±.

More information

General purpose(dual transistors)

General purpose(dual transistors) General purpose(dual transistors) FMY FMY Features ) Both the SA4K and SC3906K chips in an SMT package. ) PNP and NPN chips are connecter in a common emitter. External dimensions (Unit : mm) SMT.9..9 0.9

More information

General purpose transistor (dual transistors)

General purpose transistor (dual transistors) General purpose transistor (dual transistors) Features 1) Both a SA37AK chip and SC41K chip in a EMT or UMT or SMT package. ) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)

More information

New Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4

New Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4 General purpose transistor (isolated transistor and diode) A 2SB7 and a RB46F are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver Features ) Tr : Low CE(sat) Di : Low

More information

Low V CE(sat) transistor (strobe flash)

Low V CE(sat) transistor (strobe flash) Low CE(sat) transistor (strobe flash) SD8 Features ) Low CE(sat). CE(sat) = (Typ.) (IC/IB = 4A / 0.A) ) Excellent DC current gain characteristics. 3) Complements the SB4. Dimensions (Unit : mm) SD8 Structure

More information

2.5V Drive Nch+Pch MOSFET

2.5V Drive Nch+Pch MOSFET 2.5V Drive Nch+Pch MOSFET Structure Silicon N-channel / P-channel MOSFET Dimensions (Unit : mm) TSMT6 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

More information

2.5V Drive Nch+Pch MOSFET

2.5V Drive Nch+Pch MOSFET .V Drive Nch+Pch MOSFET EM6M EM6M Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) EMT6 Features ) Nch MOSFET and Pch MOSFET are put in EMT6 package. ) High-speed switching.

More information

1.8V Drive Nch+Nch MOSFET

1.8V Drive Nch+Nch MOSFET .8V Drive Nch+Nch MOSFET Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3).8V drive. 0.2Max.

More information

Medium Power Transistor ( 32V, 1A)

Medium Power Transistor ( 32V, 1A) Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon

More information

US6U37 Structure Dimensions TUMT6 for Features Applications Inner circuit Package specifications Designs Absolute maximum ratings Recommended New

US6U37 Structure Dimensions TUMT6 for Features Applications Inner circuit Package specifications Designs Absolute maximum ratings Recommended New 2.5 Drive Nch+SBD MOSFET Structure Silicon N-channel MOSFET / Schottky barrier diode Features ) Nch MOSFET and schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance.

More information

Medium Power Transistor (32V, 1A)

Medium Power Transistor (32V, 1A) Medium Power Transistor (3, A) SD664 / SD88 Features ) Low CE(sat) =.(Typ.) (lc / lb = ma / ma) ) Compliments SB3 / SB37 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 4..3

More information

Medium Power Transistor ( 32V, 1A)

Medium Power Transistor ( 32V, 1A) Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon

More information

Power Transistor (80V, 1A)

Power Transistor (80V, 1A) Power Transistor (80V, A) SD898 / SD733 / SD768S / SD863 SD898 / SD733 / SD768S / SD863!Features ) High VCEO, VCEO=80V ) High IC, IC=A (DC) 3) Good hfe linearity 4) Low VCE (sat) ) Complements the SB60

More information

Sulfur Tolerant Chip Resistors

Sulfur Tolerant Chip Resistors Sulfur Tolerant Chip Resistors (0603 size) Features 1) Unique protect materials prevent from silver sulfide occurrence under sulfur enviromnet. 2) Highly recommended for automotive, industrial and Power

More information

2.5V Drive Nch+Pch MOSFET

2.5V Drive Nch+Pch MOSFET 2.5V Drive Nch+Pch MOSFET Sucture Silicon P-channel MOSFET Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT6 Features ) The combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state

More information

Dimensions (Unit : mm) 2SB EIAJ : SC-62 (3) Emitter Abbreviated symbol: BA

Dimensions (Unit : mm) 2SB EIAJ : SC-62 (3) Emitter Abbreviated symbol: BA Medium Power Transistor ( 32, 1A) / 2SA1515S / Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions

More information

1.5V Drive Nch MOSFET

1.5V Drive Nch MOSFET .5V Drive Nch MOSFET Sucture Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT3 Features ).5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). pplication

More information

4bit LVDS Receiver BU90LV048. LVDS Interface ICs

4bit LVDS Receiver BU90LV048. LVDS Interface ICs LVDS Interface ICs 4bit LVDS Receiver BU90LV048 Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70.

More information

Medium power transistor (60V, 0.5A)

Medium power transistor (60V, 0.5A) Medium power traistor (, 0.5A) Features ) High speed switching. (Tf : Typ. : 80 at = 500mA) 2) Low saturation voltage, typically (Typ. : 75m at = ma, IB = ma) 3) Strong discharge power for inductive load

More information

Power management (dual transistors)

Power management (dual transistors) Power management (dual transistors) EMF3 / UMF3N DTA43T and SK39 are housed independently in a EMT6 package. Application Power management circuit Dimensions (Unit : mm) Features ) Power switching circuit

More information

Applications Suitable for use where low power consumption and a high degree of noise tolerance are required. BU4S01G2 BU4S11G2 BU4SU69G2 BU4S71G2

Applications Suitable for use where low power consumption and a high degree of noise tolerance are required. BU4S01G2 BU4S11G2 BU4SU69G2 BU4S71G2 TECHNICAL NOTE General-purpose CMOS Logic IC Series (BUS Series) Single Gate CMOS Logic ICs BUSG, BUSG, BUSU9G, BUS7G, BUS8G, BUS8G Description The BUSxxxG are ch logic ICs encapsulated in

More information

2.5V Drive Nch+SBD MOSFET

2.5V Drive Nch+SBD MOSFET 2.5 Drive Nch+SBD MOSFET US5U US5U Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions ( : mm) TUMT5 2.0 Features ) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2)

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO

More information

Dual comparators BA10393 / BA10393F / BA10393N. Standard ICs

Dual comparators BA10393 / BA10393F / BA10393N. Standard ICs Dual comparators BA9 / BA9F / BA9N The BA9, BA9F, and BA9N are dual comparators with open-collector output which allows wired OR connections. The operating power supply voltage ranges from to 6V for a

More information

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB 2SCR52P NPN 2.0A 30 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 30 I C 2.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR52P

More information

Switching (60V, 300mA)

Switching (60V, 300mA) Switching (60, 300mA)!Features ) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4). 5) Easily designed drive circuits. 6) Easy to use in parallel.!external dimeio (Units

More information

Quad 2-channel analog multiplexer / demultiplexer

Quad 2-channel analog multiplexer / demultiplexer Quad 2-channel analog multiplexer / demultiplexer BU4B / BU4BF / BU4BF The BU4B, BU4BF, and BU4BF are multiplexers / demultiplexers capable of selecting and combining analog signals and digital signals

More information

Infrared light emitting diode, top view type

Infrared light emitting diode, top view type Infrared light emitting diode, top view type The has the response speed and luminous output necessary for image transmission in audio-visual applications. It can support almost all types of optical transmission

More information

Quad 2-input AND gate

Quad 2-input AND gate Quad 2-input AND gate BU40B / BU40BF / BU40BF The BU40B, BU40BF, and BU40BF are dual-input positive-logic AND gates with four circuits mounted on a single chip. An inverter-type buffer is added to the

More information

unit:mm 2009B Tc=25 C V V

unit:mm 2009B Tc=25 C V V Ordering number:enn9d PNP/NPN Epitaxial Planar Silicon Transistors SA9/SC911 16/14mA High- Switching and AF W Predriver Applications Features Adoption of FBET process. High breakdown voltage. Good linearity

More information

Quad 2-input NAND Schmitt trigger

Quad 2-input NAND Schmitt trigger Quad 2-input NAND Schmitt trigger BU4093B / BU4093BF / BU4093BF The BU4093B, BU4093BF, and BU4093BF are 4-circuit, 2-input NAND gates whose input pins all have a Schmitt trigger function. As the circuit

More information

Hex Schmitt trigger BU4584B / BU4584BF / BU4584BFV. Standard ICs

Hex Schmitt trigger BU4584B / BU4584BF / BU4584BFV. Standard ICs Hex Schmitt trigger BU44B / BU44BF / BU44BF The BU44B, BU44BF, and BU44BF are inverter-type Schmitt trigger circuits, with six circuits mounted on a single chip. These are ideal when enhanced noise immunity

More information

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC 2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3) Low CE(sat) CE(sat) =0.35(Max.) (I C /I B =500mA/25mA) 4) Lead Free/RoHS

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: f T = MHz (typ.) Complementary to 2SA837 Absolute

More information

4V Drive Nch MOS FET RHU002N06 RHU002N06. Transistors. Rev.B 1/4. External dimensions (Unit : mm) Structure Silicon N-channel MOS FET transistor

4V Drive Nch MOS FET RHU002N06 RHU002N06. Transistors. Rev.B 1/4. External dimensions (Unit : mm) Structure Silicon N-channel MOS FET transistor 4 Drive Nch MOS FET Structure Silicon N-channel MOS FET traistor External dimeio (Unit : mm) UMT3 Features ) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4). 5) Drive

More information

MCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company

MCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company Ordering number : ENN68A PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes.

More information

General purpose transistor (dual transistors)

General purpose transistor (dual transistors) General purpose transistor (dual transistors) EMZ1FHA / UMZ1N / UMZ1NFHA / IMZ1A / IMZ1AFRA EMZ1FHA / UMZ1NFHA EMZ1 / UMZ1N / IMZ1AFRA / AEC-Q1 Qualified Features 1) Both a SA37AKFRA chip and SC41KFRA

More information

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications Unit: mm High power dissipation: P C = W () Good h FE linearity Absolute Maximum Ratings () Characteristics Symbol Rating

More information

Dual high slew rate operational amplifier

Dual high slew rate operational amplifier Dual high slew rate operational amplifier BA6 / BA6F / BA6N The BA6, BA6F, and BA6N are dual operational amplifiers which achieve approximately twice the high output current of the BA, as well as featuring

More information

CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company

CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor

More information

2.5V Drive Pch MOS FET

2.5V Drive Pch MOS FET 2.5V Drive Pch MOS FET Structure Silicon P-channel MOS FET Features ) Low on-resistance. (90mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) External dimensions

More information

Quad operational amplifier

Quad operational amplifier Quad operational amplifier BA7 / BA7F The BA7 and BA7F are monolithic ICs with four operational amplifiers featuring internal phase compensation mounted on a single silicon chip. Either a dual or single

More information

4V Drive Nch+SBD MOSFET

4V Drive Nch+SBD MOSFET 4 Drive Nch+SBD MOSFET Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions ( : mm) TUMT5 2. Features ) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching,

More information

DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET SILICON TRANSISTOR SC6 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hfe = TYP. (VCE = 6. V, IC =. ma) High Voltage: VCEO

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications

More information

PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor

PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector

More information

Midium Power Transistors (±50V / ±3A)

Midium Power Transistors (±50V / ±3A) Midium Power Transistors (±50V / ±3A) MP6Z3 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features ) Low saturation voltage, typically V CE (sat) = 0.35V (Max.)

More information

Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103

Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103 NPN 5A 60V Middle Power Transistor Datasheet Outline Parameter V CEO I C Value 60V 5A CPT3 Base Collector Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low V CE(sat)

More information

Infrared light emitting diode, top view type

Infrared light emitting diode, top view type Infrared light emitting diode, top view type The is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 9nm peak wavelength suitable for silicon

More information

2.5V Drive Pch+Pch MOSFET

2.5V Drive Pch+Pch MOSFET 2.5V Drive Pch+Pch MOSFET Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half.

More information

Switching ( 30V, 4.5A)

Switching ( 30V, 4.5A) Switching ( 30V, 4.5) Features ) Low On-resistance. (57mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive. (4.5V) External dimensions (Unit : mm) SOP8 0.4 (8) (5) () (4).27

More information

QST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline

QST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline PNP -5A -30V Middle Power Transistor Datasheet Features Parameter 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low V CE(sat) V CE(sat) = -0.25V(Max.) (I C /I B = -2A / -40mA)

More information

Switching SP8M3 SP8M3. Transistors. External dimensions (Unit : mm)

Switching SP8M3 SP8M3. Transistors. External dimensions (Unit : mm) Switching Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). External dimensions (Unit : mm) SOP8 5.±.2 (5) (8) pplication Power switching, DC /

More information

2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features

2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features PNP -10A -20V Middle Power Transistor Datasheet Outline Features Parameter Value CPT3 V CEO -20V I C -10A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5001 3) Low V CE(sat) V CE(sat)

More information

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP NPN 3.0A 60 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 60 I C 3A Base Collector Emitter Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low CE(sat)

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC Audio Frequency Amplifier Applications Unit: mm Complementary to SA6 Small collector output capacitance: C ob =.8 pf (typ.) High transition

More information

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2N441 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. ORDERING

More information

BA6840BFS / BA6840BFP-Y / BA6840BFP / BA6842BFS

BA6840BFS / BA6840BFP-Y / BA6840BFP / BA6842BFS 3-phase motor driver BA6840BFS / BA6840BFP-Y / BA6840BFP / BA6842BFS The BA6840BFS, BA6840BFP-Y, BA6840BFP, and BA6842BFS are one-chip ICs designed for driving CD-ROM motors. They are high performance-ics

More information

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor 300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

More information

2SA2099 / 2SC5888. Collector Dissipation Tc=25 C 25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

2SA2099 / 2SC5888. Collector Dissipation Tc=25 C 25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Ordering number : EN1A SA99 / SC888 SANYO Semiconductors DATA SHEET SA99 / SC888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications Relay drivers, lamp drivers,

More information

2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company

2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company Ordering number : ENN69B SA16 / SC69 SA16 / SC69 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption

More information

DC-DC Converter ( 20V, 4.0A)

DC-DC Converter ( 20V, 4.0A) DC-DC Converter ( 20V, 4.0)!Features ) Low on-resistance. (mω at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V)!External dimensions (Unit : mm) TSMT6 0.4 2.8.6 (3) ()

More information

New Designs. Not Recommended for 2SB1698 V CEO -30V -1.5A I C. Datasheet. PNP -1.5A -30V Middle Power Transistor. Outline

New Designs. Not Recommended for 2SB1698 V CEO -30V -1.5A I C. Datasheet. PNP -1.5A -30V Middle Power Transistor. Outline PNP -1.5A -30V Middle Power Transistor Datasheet Features Parameter Value 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low V CE(sat) V CE(sat) = -0.37V(Max.) (I C /I B =

More information

Video signal switcher

Video signal switcher Video signal switcher BA76N / BA76F The BA76N and BA76F are three-channel analog multiplexers with built-in mute, 6dB amplifier and 75Ω driver. The ICs designed for use in video cassette recorders, and

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High

More information

UNISONIC TECHNOLOGIES CO., LTD MMBT4401

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 UNISONIC TECHNOLOGIES CO., LTD MMBT441 NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The UTC MMBT441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. 2 1

More information

Video signal switcher

Video signal switcher Video signal switcher BA76N / BA76F The BA76N and BA76F are three-channel analog multiplexers with built-in mute, 6dB amplifier and 7Ω driver. The ICs designed for use in video cassette recorders, and

More information

DC-DC Converter ( 20V, 1.0A)

DC-DC Converter ( 20V, 1.0A) DC-DC Converter ( 20V,.0) Features ) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) pplications DC-DC converter External dimensions (Unit

More information

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198. JEITA Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198. JEITA Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon NPN Triple Diffused Type SC598 Power Amplifier Applications Unit: mm High breakdown voltage: V CEO = 0 V (min) Complementary to SA9 Suitable for use in 70-W high fidelity audio

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition

More information

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre =

More information

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating

More information

4V+2.5V Drive Nch+Pch MOSFET

4V+2.5V Drive Nch+Pch MOSFET 4V+2.5V Drive Nch+Pch MOSFET US6M US6M Sucture Silicon N-channel / P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package

More information

2SC5645. unit : mm 2106A 0.3 3

2SC5645. unit : mm 2106A 0.3 3 Ordering number : ENN688 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features Low noise : NF=1.dB typ (f=ghz). High cutoff frequency : ft=ghz typ (VCE=).

More information

Switching ( 30V, 5.0A)

Switching ( 30V, 5.0A) Switching ( 30V, 5.0) Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). External dimensions (Unit : mm) SOP8 0.4 (8) (5) () (4).27 5.0 pplication

More information

High voltage, high current Darlington transistor array

High voltage, high current Darlington transistor array BA2B / BA23B / BA23BF / BA24B High voltage, high current Darlington transistor array BA2B / BA23B / BA23BF / BA24B The BA2B, BA23B, BA23BF, and BA24B are high voltage, high current, high sustain voltage

More information

Single Digit LED Numeric Display

Single Digit LED Numeric Display LA-40 D / N Series LED displays Single Digit LED Numeric Display LA-40 D / N Series LA-40 D / N series is developed because of the demand for small single digit LED Numeric Display. Materials of emission

More information

DATA SHEET AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

DATA SHEET AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES Low VCE(sat) VCE(sat) = 5 V Max (@lc/lb = 1.0 A/50 ma) High DC Current Gain hef = 150

More information

SILICON TRANSISTOR 2SC4227

SILICON TRANSISTOR 2SC4227 DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4227 DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF

More information

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) =. V (max) (IC = A) High-speed switching

More information

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hfe = 4 to (IC =.5 A) Low collector-emitter

More information

FM / TV front end BA4424N. Audio ICs

FM / TV front end BA4424N. Audio ICs FM / TV front end The is a monolithic IC designed for FM front end use. It consists of an RF amplifier circuit, mixer circuit, local oscillation circuit, IF buffer amplifier, and a variable capacitor-diode

More information

Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103

Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103 NPN 5A 60 Middle Power Transistor Datasheet Outline Parameter CEO I C alue 60 5A CPT3 Base Collector Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low CE(sat) CE(sat)

More information

2.5V Drive Pch MOS FET

2.5V Drive Pch MOS FET 2.5V Drive Pch MOS FET Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). External dimensions (Unit : mm) TSMT3.0MX 2.9 0.85 0.4 0.7 (3) pplication

More information

2.5V Drive Pch MOS FET

2.5V Drive Pch MOS FET 2.5V Drive Pch MOS FET Structure Silicon P-channel MOS FET Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). External dimensions (Unit : mm) TSMT3

More information

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4226 DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF

More information

NPN Silicon Planar High Voltage Transistor

NPN Silicon Planar High Voltage Transistor NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21

More information

2SC5353 2SC5353. Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

2SC5353 2SC5353. Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C) TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) SC55 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times:

More information

IMH21 V CEO V EBO. 20V 12V 600mA 10k R 1. Datasheet. Outline. Parameter Tr1 and Tr2 SMT6

IMH21 V CEO V EBO. 20V 12V 600mA 10k R 1. Datasheet. Outline. Parameter Tr1 and Tr2 SMT6 NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. Datasheet Parameter Tr1 and Tr2 SMT6 V CEO V EBO I C R 1 20V 12V 600mA 10k Outline (3) (2) (1) (4) (5) (6) IMH21 SOT-457

More information

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W TPC69 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC69 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Amplifier Applications Unit: mm Small collector output capacitance: C ob =.8 pf (typ.) High transition frequency: f T = 2 MHz

More information

DATA SHEET NE68119 / 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DATA SHEET NE68119 / 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION DATA SHEET SILICON TRANSISTOR NE68119 / SC7 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD The NE68119 / SC7 is an NPN epitaxial silicon transistor designed for use in low noise

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC26 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: V CE (sat) =. V (max)

More information

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 SC55 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE SC55 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV Unit: mm High Voltage Low Saturation Voltage High Speed : V CBO = 7 V

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information