Power management (dual transistors)

Transcription

1 Power management (dual transistors) EMF3 / UMF3N DTA43T and SK39 are housed independently in a EMT6 package. Application Power management circuit Dimensions (Unit : mm) Features ) Power switching circuit in a single package. ) Mounting cost and area can be cut in half...3 (4) (3) () () (6) () Structure Silicon epitaxial planar transistor ROHM : EMT6 Each lead has same dimensions Abbreviated symbol : F3 Inner circuits. () (4) (3) ().6.3. (3) () () (6). ().6 pin mark Tr Tr.Min. (4) () (6) ROHM : UMT6 Each lead has same dimensions Abbreviated symbol : F3 Packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMF3 EMT6 F3 TR 8 UMF3N UMT6 F3 TR 3 c ROHM Co., Ltd. All rights reserved. /4.9 - Rev.A

2 EMF3 / UMF3N Absolute maximum ratings (Ta= C) Tr Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature CBO CEO EBO IC PC Tj Tstg Limits (TOTAL) to + Unit ma mw mw per element must not be exceeded. Each terminal mounted on a recommended land. Tr Drain-source voltage Gate-source voltage DSS GSS Limits 3 ± Unit Drain current Continuous ID ma IDP ma Reverse drain Continuous IDR ma current IDRP ma Total power dissipation Channel temperature Range of storage temperature PD Tch Tstg (TOTAL) to + mw PW ms Duty cycle % mw per element must not be exceeded. Each terminal mounted on a recommended land. Electrical characteristics (Ta= C) Tr Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Transition frequency of the device BCBO BCEO BEBO ICBO IEBO CE(sat) hfe R ft Min. 3.9 Typ. Max. Unit Conditions IC= μa IC= ma IE= μa μa μa CB= EB= 4 IC/IB= ma/.ma IC= ma, CE= 6. kω MHz CE=, IE=mA, f=mhz Tr Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ± μa GS=±, DS= Drain-source breakdown voltage (BR)DSS 3 ID=μA, GS= Zero gate voltage drain current IDSS. μa DS=3, GS= Gate-threshold voltage GS(th).8. DS=3, ID=μA Static drain-source 8 Ω ID=mA, GS=4 RDS(on) on-state resistance 7 3 Ω ID=mA, GS=. Forward transfer admittance Yfs ms DS=3, ID=mA Input capacitance Ciss 3 pf Output capacitance Coss 9 pf DS=, GS=, f=mhz Reverce transfer capacitance Crss 4 pf Turn-on delay time td(on) ns ID=mA, DD, Rise time tr 3 ns GS=, RL=Ω, Turn-off delay time td(off) 8 ns RGS=Ω Fall time tf 8 ns c ROHM Co., Ltd. All rights reserved. /4.9 - Rev.A

3 EMF3 / UMF3N Electrical characteristic curves Tr DC CURRENT GAIN : hfe k Ta= 4 CE= μ μ μ m m m m m m m COLLECTOR CURRENT : IC (A) Fig. DC current gain vs. collector current COLLECTOR SATURATION OLTAGE : CE(sat) () m m m m m m m Ta= 4 lc/lb= m m μ μ μ m m m m m mm COLLECTOR CURRENT : IC (A) Fig. Collector-emitter saturation voltage vs. collector current Tr Ta= GS=. 3 4 DRAIN-SOURCE OLTAGE : DS () m m m m m m DS=3 m Ta= m 7 m.m.m 3 4 GATE-SOURCE OLTAGE : GS () GATE THRESHOLD OLTAGE : GS(th) (). DS=3 ID=.mA 7 CHANNEL TEMPERATURE : Tch () Fig.3 Typical output characteristics Fig.4 Typical transfer characteristics Fig. Gate threshold voltage vs. channel temperature Ta= 7 GS= Ta= 7 GS= ID=.A ID=.A Ta= GATE-SOURCE OLTAGE : GS () Fig.6 resistance vs. drain current ( Ι ) Fig.7 resistance vs. drain current ( ΙΙ ) Fig.8 resistance vs. gate-source voltage c ROHM Co., Ltd. All rights reserved. 3/4.9 - Rev.A

4 EMF3 / UMF3N ID=mA ID=mA GS=4 7 CHANNEL TEMPERATURE : Tch () FORWARD TRANSFER ADMITTANCE : Yfs (S) Ta= 7 DS= REERSE DRAIN CURRENT : IDR (A) m m m m m m m m m.m.m Ta= 7 GS=. SOURCE-DRAIN OLTAGE : SD () Fig.9 resistance vs. channel temperature Fig. Forward transfer admittance vs. drain current Fig. Reverse drain current vs. source-drain voltage ( Ι ) REERSE DRAIN CURRENT : IDR (A) m m m m m m m m m.m.m GS=4 Ta=. SOURCE-DRAIN OLTAGE : SD () CAPACITANCE : C (pf). Ta= f=mhz GS= Ciss Coss Crss. DRAIN-SOURCE OLTAGE : DS () SWITHING TIME : t (ns) tr td(on) td(off) tf.. DRAIN CURRENT : ID (ma) Ta= DD= GS= RG=Ω Fig. Reverse drain current vs. source-drain voltage ( ΙΙ ) Fig.3 Typical capacitance vs. drain-source voltage Fig.4 Switching characteristics c ROHM Co., Ltd. All rights reserved. 4/4.9 - Rev.A

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