Dimensions (Unit : mm) MPT3. (1)Gate (2)Drain (3)Source. Inner circuit GATE SOURCE 1 ESD PROTECTION DIODE 2 BODY DIODE 60 ±2. mw W.

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1 V Drive Nch MOSFET RHPN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) MPT Features ) Low On-resistance. ) High speed switching. 3) Wide SO. (). ().5 (3) pplications Switching ()Gate ()Drain (3)Source bbreviated symbol : LR Packaging specifications and hfe Inner circuit Package Type Code Basic ordering unit (pieces) RHPN Taping T GTE DRIN SOURCE ESD PROTECTION DIODE BODY DIODE bsolute maximum ratings () Drain-source voltage Gate-source voltage Drain current Source current Total power dissipation Continuous Continuous Channel temperature Range of storage temperature Pw µs, Duty cycle % When mounted on a.7mm ceramic board Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits ± ± ± to 5 Unit V V mw W C C Thermal resistance Channel to ambient When mounted on a.7mm ceramic board Symbol Limits Unit 5 C/W Rth(ch-a).5 C/W c 9 ROHM Co., Ltd. ll rights reserved. / Rev.

2 RHPN Electrical characteristics () Gate-source leakage Symbol IGSS Min. Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Typ. Max. Unit Conditions ± µ VGS= ±V, VDS=V V ID= m, VGS=V µ VDS= V, VGS=V..5 V VDS= V, ID= m 5 mω ID=, VGS= V mω ID=, VGS=.5V 3 mω ID=, VGS= V. S VDS= V, ID= pf VDS= V 5 pf VGS=V pf f=mhz 7 ns VDD 3V ns ID= VGS= V ns RL=3Ω ns RG=Ω 7 nc VDD 3V nc VGS= V nc ID= Body diode characteristics (Source-drain) () Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD. V IS=, VGS=V c 9 ROHM Co., Ltd. ll rights reserved. / Rev.

3 RHPN Electrical characteristics curves DRIN CURRENT : I D [] V GS = V V GS = 5.V V V GS =.V GS = 3.5V V GS =.V V GS =.V DRIN CURRENT : I D [] V GS = V V GS = 5.V V GS = 3.V V GS =.V V GS =.V DRIN CURRENT : I D [].. V DS = V Ta= 5 C Ta= 75 C Ta= 5 C Ta= - 5 C GTE-SOURCE VOLTGE : V GS [V] Fig. Typical Output Characteristics(Ⅰ) Fig. Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics. Ta= 5 C V GS =.V V GS = V. V GS = V Ta=5 C Ta= -5 C Ta=5 C Ta= -5 C Fig. Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig. Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ). V GS =.V Ta=5 C Ta= -5 C... FORWRD TRNSFER DMITTNCE : Yfs [S] V DS = V Ta= -5 C Ta=5 C... REVERSE DRIN CURRENT : Is []. V GS =V Ta=5 C Ta=-5 C..5.5 SOURCE-DRIN VOLTGE : V SD [V] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig. Forward Transfer dmittance vs. Drain Current Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage c 9 ROHM Co., Ltd. ll rights reserved. 3/ Rev.

4 RHPN RESISTNCE : R DS (ON)[Ω] I D =. I D =. SWITCHING TIME : t [ns] t d (off) t f t d (on) V DD = 3V V GS =V R G =Ω t r GTE-SOURCE VOLTGE : V GS [V] V DD = 3V I D =. R G =Ω GTE-SOURCE VOLTGE : V GS [V] TOTL GTE CHRGE : Qg [nc] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig. Switching Characteristics Fig. Dynamic Input Characteristics Operation in this area is limited by R DS(ON) (V GS = V) us CPCITNCE : C [pf] f=mhz V GS =V Crss Coss Ciss.. DRIN CURRENT : I D (). DC operation PW = ms ms. Ta = 5 C Single Pulse MOUNTED ON SERMIC BORD.. Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig. Maximum Safe Operating era NORMRIZED TRNSIENT THERML RESISTNCE : r (t). Ta = 5 C Single Pulse. Rth(ch-a)(t) = r(t) Rth(ch-a) Rth(ch-a) =.5 C/W <Mounted on a SERMIC board>.... PULSE WIDTH : Pw(s) Fig.5 Normalized Transient Thermal Resistance vs. Pulse Width c 9 ROHM Co., Ltd. ll rights reserved. / Rev.

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