2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET
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- Curtis Adam Bridges
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1 .5V Drive Nch MOSFET.5V Drive Pch MOSFET TT8M Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features ) Low on-state resistance. ) Low voltage drive. 3) High power package. () () (3) (4) bbreviated symbol : M Each lead has same dimensions pplication Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Type Code Basic ordering unit (pieces) TT8M Taping TR 3 () () (3) (4) ESD protection diode Body diode () Tr Source () Tr Gate (3) Tr Source (4) Tr Gate (5) Tr Drain (6) Tr Drain (7) Tr Drain (8) Tr Drain bsolute maximum ratings () <Tr : Nch> Drain source voltage Gate source voltage Drain current Source current (Body diode) Pw µs, Duty cycle % Continuous Continuous Symbol S S P IS ISP Limits 3 ± ±.5 ±.8 Unit V V c 9 ROHM Co., Ltd. ll rights reserved. / Rev.
2 <Tr : Pch> Symbol Limits Unit Drain source voltage S V Gate source voltage S ± V Drain current Continuous P ±.5 ± Source current (Body diode) Continuous IS ISP.8 Pw µs, Duty cycle % <Tr ND Tr> Symbol Limits Unit Total power dissipation Channel temperature PD Tch.5. 5 W / TOTL W / ELEMENT C Range of Storage temperature Mounted on a ceramic board Tstg 55 to +5 C Electrical characteristics () < Characteristics for the Tr( Nch ).> Symbol Min. Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Typ. Max. Unit Conditions IGSS ± µ =±V, =V V(BR) DSS 3 V =m, =V SS µ =3V, =V (th).5.5 V =V, =m 65 9 mω =.5, =4.5V RDS (on) 7 95 mω =.5, =4V 95 3 mω =.5, =.5V Yfs. S =V, =.5 Ciss 8 pf =V Coss 6 pf =V Crss 35 pf f=mhz td (on) 7 ns VDD 5V tr 3 ns =. =4.5V td (off) ns RL.5Ω tf ns RG=Ω Qg 3. nc VDD 5V, =.5 Qgs.9 nc =4.5V Qgd.4 nc RL 6Ω, RG=Ω Body diode characteristics (Source-drain) () Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD. V IS=.5, =V c 9 ROHM Co., Ltd. ll rights reserved. / Rev.
3 Electrical characteristics () < Characteristics for the Tr( Pch ).> Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ± µ =±V, =V Drain-source breakdown voltage V(BR) DSS V = m, =V Zero gate voltage drain current SS µ = V, =V Gate threshold voltage (th).3. V = V, = m mω =.5, = 4.5V Static drain-source on-state RDS (on) mω =., =.5V resistance 5 mω =., =.8V 4 8 mω =.5, =.5V Forward transfer admittance Yfs.5 S = V, =.5 Input capacitance Ciss 7 pf = V Output capacitance Coss pf =V Reverse transfer capacitance Crss 9 pf f=mhz Turn-on delay time td (on) 9 ns VDD V Rise time tr 3 ns =. = 4.5V Turn-off delay time td (off) ns RL 8.3Ω Fall time tf 85 ns RG=Ω Total gate charge Qg nc VDD V, =.5 Gate-source charge Qgs.5 nc = 4.5V Gate-drain charge Qgd. nc RL 4Ω, RG=Ω Body diode characteristics (Source-drain) () Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD. V IS=.5, =V c 9 ROHM Co., Ltd. ll rights reserved. 3/ Rev.
4 Electrical characteristics curves <Nch> DRIN CURRENT : [] V GS= V V GS= 4.5V V GS=4.V V GS=.5V V GS=.V V GS=.5V V GS=.V DRIN CURRENT : [] V GS= 4.5V V GS= 4.V V GS=.5V V GS=.5V V GS=.V DRIN CURRENT : [].. V DS= V Ta= 5 C Ta= 75 C Ta= 5 C Ta= - 5 C..5.5 DRIN-SOURCE VOLTGE : V DS[V] DRIN-SOURCE VOLTGE : V DS[V] GTE-SOURCE VOLTGE : V GS[V] Fig. Typical Output Characteristics(Ⅰ) Fig. Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics RESISTNCE : RDS(on)[mΩ] Ta= 5 C V GS=.5V V GS= 4.V V GS= 4.5V RESISTNCE : RDS(on)[mΩ] V GS= 4.5V Ta=5 C RESISTNCE : R DS(on)[mΩ] V GS= 4.V Ta=5 C... DRIN-CURRENT : I D[] DRIN-CURRENT : I D[] DRIN-CURRENT : I D[] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) RESISTNCE : RDS(on)[mΩ] V GS=.5V Ta=5 C FORWRD TRNSFER DMITTNCE : Yfs [S] V DS= V Ta=5 C RESISTNCE : RDS(ON)[mΩ] I D=. I D= DRIN-CURRENT : I D[] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) DRIN-CURRENT : I D[] Fig.8 Forward Transfer dmittance vs. Drain Current GTE-SOURCE VOLTGE : V GS[V] Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage c 9 ROHM Co., Ltd. ll rights reserved. 4/ Rev.
5 REVERSE DRIN CURRENT : Is []. V GS=V Ta=5 C Ta=-5 C GTE-SOURCE VOLTGE : V GS [V] V DD= 5V I D=.5 R G=Ω CPCITNCE : C [pf] Coss Ciss Crss f=mhz V GS=V..5.5 SOURCE-DRIN VOLTGE : V SD [V] Fig. Reverse Drain Current vs. Sourse-Drain Voltage 3 4 TOTL GTE CHRGE : Qg [nc] Fig. Dynamic Input Characteristics.. DRIN-SOURCE VOLTGE : V DS[V] Fig. Typical Capacitance vs. Drain-Source Voltage SWITCHING TIME : t [ns] t f t d(off) R G=Ω V DD= 5V V GS=4.5V t d(on) t r.. DRIN-CURRENT : I D[] Fig.3 Switching Characteristics c 9 ROHM Co., Ltd. ll rights reserved. 5/ Rev.
6 <Pch> DRIN CURRENT : -[] 4 3 V GS= -.3V V GS= -4.5V V GS= -.5V V GS= -.8V V GS= -.5V DRIN CURRENT : -[] 4 3 V GS= -V V GS= -.8V V GS= -.5V = -.V = -.3V DRIN CURRENT : -[].. V DS= -V Ta= 5 C Ta= 75 C Ta= 5 C Ta= - 5 C V GS= -.V = -.V DRIN-SOURCE VOLTGE : -V DS[V] DRIN-SOURCE VOLTGE : -V DS[V] GTE-SOURCE VOLTGE : -V GS[V] Fig. Typical Output Characteristics(Ⅰ) Fig. Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics RESISTNCE : RDS(ON)[mΩ] V GS= -.5V V GS= -.8V V GS= -.5V V GS= -4.5V. RESISTNCE : RDS(ON)[mΩ] V GS= -4.5V Ta=5 C. RESISTNCE : RDS(ON)[mΩ] = -.5V Ta=5 C. DRIN-CURRENT : -I D[] DRIN-CURRENT : -I D[] DRIN-CURRENT : -I D[] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) RESISTNCE : RDS(ON)[mΩ] = -.8V Ta=5 C. DRIN-CURRENT : -[] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) RESISTNCE : RDS(ON)[mΩ] = -.5V Ta=5 C. DRIN-CURRENT : -I D[] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) FORWRD TRNSFER DMITTNCE : Yfs [S] V DS= -V Ta=5 C. DRIN-CURRENT : -[] Fig.9 Forward Transfer dmittance vs. Drain Current c 9 ROHM Co., Ltd. ll rights reserved. 6/ Rev.
7 RESISTNCE : RDS(ON)[mΩ] I D= -. I D= REVERSE DRIN CURRENT : -Is []. V GS=V Ta=5 C Ta=-5 C GTE-SOURCE VOLTGE : - [V] V DD= -V I D= -.5 R G=Ω GTE-SOURCE VOLTGE : -V GS[V] SOURCE-DRIN VOLTGE : -V SD [V] TOTL GTE CHRGE : Qg [nc] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig. Reverse Drain Current vs. Sourse-Drain Voltage Fig. Dynamic Input Characteristics CPCITNCE : C [pf] Coss Ciss SWITCHING TIME : t [ns] Crss f=mhz t r t d(on) V GS=V.... t d(off) t f V DD= -V V GS=-4.5V R G=Ω DRIN-SOURCE VOLTGE : -V DS[V] Fig.3 Typical Capacitance vs. Drain-Source Voltage DRIN-CURRENT : -I D[] Fig.4 Switching Characteristics c 9 ROHM Co., Ltd. ll rights reserved. 7/ Rev.
8 Measurement circuits < Nch > RG D.U.T. RL VDD Pulse Width 9% 5% 5% % % % 9% 9% td(on) tr td(off) tf ton toff Fig.- Switching Time Measurement Circuit Fig.- Switching Waveforms VG Qg IG(Const.) D.U.T. RL Qgs Qgd RG VDD Charge Fig.- Gate charge measurement circuit Fig.- Gate Charge Waveform < Pch > Pulse width RL % 5% 9% 5% D.U.T. % % RG VDD td(on) 9% 9% tr td(off) tf ton toff Fig.3- Switching time measurement circuit Fig.3- Switching waveforms VG Qg IG(Const.) D.U.T. RL Qgs Qgd RG VDD Charge Fig.4- Gate charge measurement circuit Fig.4- Gate charge waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. c 9 ROHM Co., Ltd. ll rights reserved. 8/ Rev.
9 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System 9 ROHM Co., Ltd. ll rights reserved. R39
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