LA4902 参考資料. Specifications. Monolithic Linear IC Audio Output for TV application 10W BTL Monaural Power Amplifier IC. Maximum Ratings at Ta = 25 C
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1 Ordering number : ENA032 LA4902 Monolithic Linear IC Audio Output for TV application 0W BTL Monaural Power Amplifier IC Overview The LA4902 is a high-efficiency monaural BTL power amplifier. The LA4902 holds the number of external components to a minimum and reduces power consumption (thermal loss) in the operating range to one half that of earlier class B power amplifiers by using a signal following switching system for the power supply to the amplifier output stage and by including a nonlinear amplifier in the signal system. The use of a DIP-28H package obviates the need for a separate heat sink and can contribute to internal space savings in end products. Functions High-efficiency 0W monaural BTL power amplifier (VCC = 4V, RL = 8 ) Provided in a DIP-28H package (no heat sink is required) The number of required signal-following switching circuits has been held to a single circuit, thus reducing even further the number of external components required. The output is a fully analog signal, and no switching noise appears on the output lines. Built-in standby switch (amplifier block/headphone block) Built-in headphone amplifier : input/2 output (VG = 6dB, PO = 60mW) Built-in protection circuits (overvoltage and thermal protection circuits) Specifications Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Maximum supply voltage V CC max No signal 24 V Allowable power dissipation Pd max With a infinity large heat sink 5 W Thermal resistance j-c 3 C/W Maximum junction temperature Tj max 50 C Operating temperature Topr -25 to 75 C Storage temperature Tstg -40 to 50 C Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. N506 MS PC B8-483 No.A032-/5
2 Operating Conditions at Ta = 25 C Parameter Symbol Conditions Ratings Unit Recommended supply voltage V CC 4 V Recommended load resistance R L 8 Operating supply voltage range V CC op The range where the package Pd is not exceeded 8 to 8 V Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max [Amplifier Block] V CC = 4V, R L = 8, f = khz, Rg = 600, See the specified board and circuit. Quiescent current I CCO Rg = ma Standby current Ist 0 0 A Voltage gain VG V O = 0dBm db Output power P O THD = 0% 8 0 W Total harmonic distortion THD P O = W, LPF = 30kHz % Output noise voltage V NO Rg = 0, DIN AUDIO mv Ripple rejection SVRR Rg = 0, fr = 00Hz, VR = 0dBm, DIN AUDIO db Input resistance Ri k Output offset voltage V N offset Rg = mv Standby mode on voltage V ST With the amplifier in, and the voltage applied 3 V CC V through a 0k resistor [Headphone Block] V CC = 4V, R L = 32, f = khz, Rg = 600, See the specified board and circuit. Voltage gain VG V O = 0dBm db Output power P O THD = 0% mw Total harmonic distortion THD V O = 0dBm, LPF = 30kHz % Ripple rejection SVRR Rg = 0, fr = 00Hz, VR = 0dBm, DIN AUDIO db Output noise voltage V NO Rg = 0, DIN AUDIO mv Package Dimensions unit : mm (typ) 347C Pd max -- Ta R With a infinity large heat sink, jc=3 C/W Mounted on the specified circuit board 3.5W 3 Independent IC 2.5W 2 2.W 5W.5W (.8) Ambient temperature, Ta C SANYO : DIP28H(500mil) No.A032-2/5
3 Block Diagram Headphone L R ch 00 F/0V HP OUT * F 0 47 F/25V SW GND 2 3 Ripple filter V CC VG=6dB Voltage regulator Headphone standby switch Ripple filter 28 HP IN F/0V H/P Standby 27 0k 5V D.C F/25V SW GND 4 Amplifier standby switch Switching regulator block 25 AMP Standby 0k 5V Switching transistor A ft=30 to 50MHz SW B 5 Switching drive H. L. S 24 Flywheel diode F/25V (OS capacitor) SW E 200 H SW OUT V CC (SW) B A *H.L.S Higher Level signal Selector On time muting circuit Impulse noise prevention circuit ON TIME 22 F/6.3V B 000 F/25V V CC 9 20 PRE GND pF * 0. F * 0. F OUT - OUT 2 3 Output amplifier A B Nonlinear amplifier Input amplifier IN BE EP Beep amplifier 8 7 F/6.3V 6 F/6.3V 4 Output amplifier 5 * Polyester film capacitor No.A032-3/5
4 High-efficiency technologies used in the LA4902. Signal following switching method The switching regulator technique is adopted in the LA4902's power supply system used for the amplifier's output stage. Power consumption is reduced significantly by having the switching regulator's output voltage follow the signal level. Furthermore, we were able to hold the number of switching regulator circuits required to a single circuit by use in combination with the nonlinear amplifier technique described below. (See figure.) Block Diagram Regulator output Nonlinear amplifier V IN Switching regulator C A B Amplifier's output stage V CC [Figure ] 2. Nonlinear amplifier technique The LA4902 adopts a nonlinear amplifier in the amplifier signal system that has the nonlinear characteristics shown in figure 2. This system eliminates the need for the switching regulator used for the low side signal by lowering the midpoint voltage from the /2 VCC used in normal amplifiers to about 2V. This nonlinear amplifier is formed based on a differential amplifier that has a symmetrical negative feedback circuit. Although the BTL output stage positive phase and reverse phase output waveforms have the compressed/expanded half-wave waveform shown in figure 3, the synthesized output waveform at the negative terminal is the same as that output by earlier products. Nonlinear Amplifier I/O Characteristics OUTPUT [Figure 2] INPUT Output Waveforms Regulator output Output transistor loss Positive phase output (A) Midpoint voltage GND Reverse phase output (B) Between outputs (A - B) [Figure 3] No.A032-4/5
5 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, Specifications and information herein are subject to change without notice. PS No.A032-5/5
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More informationDiscontinued AN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control
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ICs for Audio Common Use AN752 Dual -W BTL audio power amplifier Overview The AN752 is an audio power amplifier IC for stereo system. The BTL (Balanced Transformer-Less) method can provide fewer external
More informationDevice Marking Device Device Package Reel Size Tape width Quantity HM4485B HM4485B SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit
P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or in PWM applications. General
More informationSOT-23. Symbol Characterizes Typ. Max. Units R θja Junction-to-ambient (t 10s) C /W
Main Product Characteristics: V DSS -20V D R DS (on) 60mΩ (typ.) G I D -3A 1 SOT-23 Marking and pin Assignment S Schematic diagram Features and Benefits: Advanced MOSFET process technology Special designed
More informationunit: mm 4033 THD = 1.0%, Po (2) f = 30Hz to 20kHz
Ordering number: EN2885A Thick Film Hybrid IC STK4432 AF Power Amplifier (25W + 25W min, THD = 1.0%) Features Package Dimensions Small and slim package with 31 mm height Pin compatible with STK430 series
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More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE4606 SOP-8 Ø330mm 12mm 2500 units
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
More information深圳市钧敏科技有限公司
H E E1 Y A C A2 A1 12V Single coil Motor Driver IC with control Applications Single coil DC brushless motor Package: MSOP-1pin 392A XXXX Features Built-in hall sensor Single phase full wave driver Soft
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More informationMaintenance/ Discontinued
ICs for TV AN723 3-W BTL audio power amplifier Overview The AN723 is an audio power amplifier IC of -ch. output. In the BTL (balanced transformerless) method, fewer external parts and easier design for
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6003 NCE6003Y SOT-23-3L Ø180mm 8 mm 3000 units
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
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Ordering number : ENAA LAMC Monolithic Linear IC Power Amplifier for.v Headphone Stereos http://onsemi.com Features Low current drain Ω load drive capability Excellent reduced voltage characteristics Excellent
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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device
More informationFW342. Mounted on a ceramic board (1500mm 2 0.8mm)1unit, PW 10s. Mounted on a ceramic board (1500mm 2 0.8mm), PW 10s
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More informationLA7674. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, JAPAN.
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ICs for Audio Common Use AN9 Dual.W Audio Power Amplifier Overview The AN9 is an integrated circuit designed for low distortion, low noise and low power dissipation audio set of.w (.V, Ω) output. Stereo
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4.0 W 2 (8 V, 8 Ω) Power Amplifier with Mute Function and Volume Control Overview The is a monolithic integrated circuit designed for 4.0 W (8 V, 8 Ω) output audio power amplifier. It is a dual channel
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ICs for TV AN22 Dual -W BTL audio power amplifier Overview AN22 is an audio power amplifier IC for the stereo system. In the BTL (balanced transformerless) method, fewer external parts and easier design
More informationAN W 2 (18 V, 8 Ω) Power Amplifier with Mute Function and Volume Control. ICs for Audio Common Use. Overview. Features.
. W 2 (8 V, 8 Ω) Power Amplifier with Mute Function and Volume Control Overview The is a monolithic integrated circuit designed for. W (8 V, 8 Ω) output audio power amplifier. It is a dual channel SEPP
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