Parameter Symbol Conditions Ratings Unit
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1 Ordering number : ENA11A LV591M Bi-CMOS LSI 1.V Constant-Voltage Power Supply IC Overview The LV591M is a constant-voltage power supply IC incorporating the output ON/OFF function, which offers advantages such as small current drain when output OFF and saves power dissipation of the equipment. Features Output voltage ON/OFF function with the control pin (active, high) Output current of 1A obtainable Small current drain (1μA max) when output OFF and optimum for power saving MFP (mil) package, ensuring easy mounting design Full compliment of protection circuits incorporated (including overcurrent protection, thermal protection) Specifications Absolute Maximum Ratings at Ta = 5 C Parameter Symbol Conditions Ratings Unit Maximum power supply V IN 1 V IN 1 pin. V V IN V IN pin. V Allowable power dissipation Pd max Mounted on a specified board.* 1.5 W Operating Temperature Topr - to +5 C Storage Temperature Tstg - to +15 C * Specified board: 5mm 5mm 1.mm, glass epoxy both sides Recommended Operating Ranges at Ta = 5 C Parameter Symbol Conditions Ratings Unit power supply V IN 1 V IN 1 pin 1. to V V IN V IN pin 1. to V Output current I O to 1 A Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. 91 SY/9 MS 91-S7 No.A11-1/7
2 LV591M Electrical Characteristics at Ta = 5 C, VIN1 = VIN = V Ratings Parameter Symbol Conditions Unit min typ max Current drain I VIN LDO ON 11 1 μa Standby current I STBY CTL = Low 1 μa Output Output voltage V O I O = 1mA V Dropout voltage 1 Vdrop1_1 I O = 1A, V IN 1 = V IN 1 V Vdrop1_ I O =.A, V IN 1 = V IN. V Dropout voltage Vdrop_1 I O = 1A, V IN = V, V IN 1 dropout voltage 1 V Vdrop_ I O =.A, V IN = V, V IN 1 dropout voltage. V Load Regulation V LD I O = 5mA to 1A 1 5 mv Line Regulation V LN V IN 1 = V IN = 1.V to V, I O = 1mA 1 5 mv Voltage temperature coefficient ΔVT Ta = - to +5 C, I O = 1mA * ±1 ppm/ C Ripple Rejection V RL I O = 1mA, VRpp=1V, f RR = 1kHz * 7 db Output Noise Voltage V ON I O = 1mA, Hz < f < khz * μvrms CTL pin High level voltage V CTL H 5 V Low level voltage V CTL L. V Input current I CTL V CTL = V.5 μa * Design guarantee Package Dimensions unit : mm (typ) 7 (.5) 1 TOP VIEW SIDE VIEW.15. BOTTOM VIEW (.) (.) Allowable power dissipation, Pd max -- W Pd max -- Ta Specified board: mm glass epoxy both sides..5 SIDE VIEW () 1.7 MAX Ambient temperature, Ta -- C.5 SANYO : MFP(mil) No.A11-/7
3 Pin Assignment LV591M VIN1 1 GND NC VIN LV591M 7 NC VO CTL 5 NC Top view Specified Board (Top side) Specified Board (Bottom side) Block Diagram VIN1 1 VO 1μF VIN Signal power supply.7μf CTL Current Limit BANDGAP Reference Thermal Protection GND No.A11-/7
4 LV591M Pin Function Pin No. Pin name Function Equivalent circuit 1 V IN 1 Power system supply pin. 1 VIN1 V O Output voltage pin. Ω VO GND NC No contact. V IN Signal system power supply pin. V IN CTL ON/OFF control pin. CTL 1kΩ MΩ GND 5 NC No contact. 7 NC No contact. GND Ground pin. 1 VIN1 = VIN = V IVIN -- Ta.1 V IN 1 = V IN = V ISTBY -- Ta Current drain, I VIN -- μa Standby current, ISTBY -- μa Ambient temperature, Ta -- C Ambient temperature, Ta -- C VLN -- Ta VLD -- Ta VIN1 = VIN = 1. to V IO = 1mA VIN1 = VIN = V IO = 5mA to 1A 7 Line regulation, V LN -- mv Load regulation, VLD -- mv Ambient temperature, Ta -- C Ambient temperature, Ta -- C No.A11-/7
5 LV591M Output voltage, V O -- V V IN 1 = V IN = V I O = 1mA VO -- Ta CLT threshold voltage, VCLTth -- V V IN 1 = V IN = V VCLTth -- Ta Ambient temperature, Ta -- C Ambient temperature, Ta -- C V CL = V ICTL -- Ta. V IN 1 = V IN = V VO -- IO CLT input current, I CLT -- μa.5. Output voltage, VO -- V Ambient temperature, Ta -- C 1 VRpp = 1V I O = 1mA VRL -- frr Output current, I O -- A Ripple rejection, V RL -- db Output current, I O -- A Output voltage, V O -- V Ripple frequency, frr -- khz Load response 1mA ma Output current, IO -- A Output voltage, VO -- V t -- μs μs / div t -- μs μs / div Load response 5mA 15mA No.A11-5/7
6 LV591M Output voltage, V O -- V Input voltage, V IN -- V tr,tf = 5μs t -- μs Input response I O = 1mA 1μS / div Output voltage, V O -- V CTL input voltage, V CLT -- V 1..5 I O = ma C O =.7μF CTL ON 1..5 I O = ma C O =.7μF CTL OFF t -- ms.ms / div t -- ms 1ms / div Output voltage, VO -- V CTL input voltage, VCLT -- V No.A11-/7
7 LV591M Radiation Pad Radiation pad is high impedance and connected with a substrate of IC. Use radiation pad by GND or opening. VIN1 and VIN The dropout voltage can be lowered by making VIN1 and VIN another power supply within a some current range. Refer to Figure 1. Maximum dropout voltage, Vdrop max -- V (1) () Vdrop max -- IO (1) V IN 1 and V IN are connected. () V IN 1 and V IN are another power supplies. (V IN = V) Output current, I O -- ma Figure 1 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 1. Specifications and information herein are subject to change without notice. PS No.A11-7/7
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P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or in PWM applications. General
More informationNCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6003 NCE6003Y SOT-23-3L Ø180mm 8 mm 3000 units
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
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Rev.3._ HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Features The S-L298 series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption
More informationLA1837M. Specifications. Monolithic Linear IC Single-Chip AM/FM Tuner IC for Home Stereo Systems. Maximum Ratings at Ta = 25 C
Ordering number : EN8271 LA1837M Monolithic Linear IC Single-Chip AM/FM Tuner IC for Home Stereo Systems Overview The LA1837M is a single-chip AM/FM tuner IC that provides AM and FM IF and multiplex decoding
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http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), This device is suitable for use as a load switch or power
More informationSSF2449. GENERAL FEATURES VDS = -20V,ID =-5A RDS(ON) < Application PWM applications Load switch Power management
DESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or
More information1.5 V to 5.5 V, selectable in 0.1 V step Output voltage accuracy: ±1.0% Dropout voltage:
www.sii-ic.com HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Seiko Instruments Inc., 22-215 Rev.5.1_ The is a positive voltage regulator with a low dropout voltage, high-accuracy output voltage,
More informationCPH6315. unit : mm 2151A
Ordering number : ENN18 CPH61 P-Channel Silicon MOSFET CPH61 High-Speed Switching Applications Features Low ON-resistance. High-speed switching..v drive. Package Dimensions unit : mm 11A [CPH61].9.1 6
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Rev.2.2_ HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR The is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based
More informationBuilt-in low voltage reset and thermal shutdown circuit Compact TSSOP-24 package
Ordering number : ENA1134A Bi-CMOS LSI Forward/Reverse Motor Driver http://onsemi.com Overview is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports
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NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS (ON) voltages as low as 4.5V., low gate charge and operation with gate G D General
More information2SJ616. unit : mm 2062A
Ordering number : ENNA SJ616 P-Channel Silicon MOSFET SJ616 Preliminary Ultrahigh-Speed Switching Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Package Dimensions unit :
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE4606 SOP-8 Ø330mm 12mm 2500 units
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
More informationMonolithic Linear IC Electronic Tuning Type AM/FM Tuner System
Ordering number : EN9C LA Monolithic Linear IC Electronic Tuning Type AM/FM Tuner ystem Features Minimum number of external parts required. Excellent /N Local OC with ALC Local OC buffer Tuning indicator
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www.sii-ic.com HIGH RIPPLE-REJECTION AND LOW DROPOUT CMOS VOLTAGE REGULATOR Seiko Instruments Inc., 21-21 Rev.5._ The S-L298 series is a positive voltage regulator with a low dropout voltage, high output
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ICs for Mobile Communication AN8SSM Ripple filter IC Overview The AN8SSM is a ripple filter IC that rejects the ripple component superimposed on the regulator output. Use for the VCO bias of cellular phones
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Pb Free Product http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate
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DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch
More informationSOT-23. Symbol Characterizes Typ. Max. Units R θja Junction-to-ambient (t 10s) C /W
Main Product Characteristics: V DSS -20V D R DS (on) 60mΩ (typ.) G I D -3A 1 SOT-23 Marking and pin Assignment S Schematic diagram Features and Benefits: Advanced MOSFET process technology Special designed
More informationunit: mm 4148 Period = 100 ms, duty 1% V CC 2 = 5.0 V
Ordering number : EN4874 Thick Film Hybrid IC STK6877 Reversible Brush-Type DC Motor Driver (output current: 8 A) Overview The STK6877 is an H bridge power pack reversible brushtype DC motor driver that
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Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units
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