LA6324NM 330 mw Operating temperature Topr -30 to +85 C Storage temperature Tstg -55 to +125 C
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1 Ordering number : ENN274 L6324N L6324NM Monolithic Linear I HighPerformance Quad Operational mplifier Overview The L6324 consists of four independent, highperformance, internally phase compensated operational amplifiers that are designed to operate from a single power supply over a wide range of voltages. These four operational amplifiers are packaged in a single package. s in case of conventional generalpurpose operational amplifiers, operation from dual power supplies is also possible and the power dissipation is low. It can be applied to various uses in commercial and industrial equipment including all types of transducer amplifiers and D amplifiers. Features No phase compensation required Wide operating voltage range: 3. V to 3. V (single supply) ±1.5 V to ±15. V (dual supplies) Highly resistant to dielectric breakdown Input voltag range includes the neighborhood of GND level and output voltage range VOUT is from to V 1.5 V. Small current dissipation: I =.6 m typ/v = 5 V, L = Specitications bsolute Maximum atings at Ta = 25 Parameter Symbol onditions atings Unit Maximum Supply voltage max 32 V Differential input voltage V ID 32 V Maximum input voltage V IN max.3 to 32 V llowable power dissipation Pd max L6324N 72 mw L6324NM 33 mw Operating temperature Topr 3 to 5 Storage temperature Tstg 55 to 125 ny and all SNYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as lifesupport systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. onsult with your SNYO Semiconductor representative nearest you before using any SNYO Semiconductor products described or contained herein in such applications. SNYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SNYO Semiconductor products described or contained herein / O254TN(P)/6396H(II)/413T(KOTO) No.2741/5
2 Operating haracteristics at Ta = 25, V = 5 V L6324N,6324NM atings Parameter Symbol onditions Test circuit Unit min typ max Input offset voltage V IO 1 ±2 ±7 mv Input offset current I IO I IN () / I IN ( ) 2 ±5 ±5 n Input bias current I B I IN () / I IN ( ) n ommonmode input voltage range V IM V ommonmode rejection ratio M 4 65 db Voltage gain VG = 15 V, L 2 kω V/mV Output voltage range UT 1.5 V Supply voltage rejection ratio SV db hannel separation S f = 1 k to 2 khz 7 12 db I.6 2 m urrent drain I = 3 V m Output current (Source) I O source V IN = 1 V, V IN = V 9 2 m Output current (Sink) I O sink V IN = V, V IN = 1 V m Package Dimensions unit : mm unit : mm 33B [L6324N] 334B [L6324NM] (3.) 3.65max 1 7 (1.5) 1.7max.15 (1.) min (1.19) SNYO: DIP14(3mil) SNYO: MFP14(225mil) Equivalent ircuit Pin ssignment (1 unit) (L6324N, 6324NM) UT1 V IN UT4 13 V IN4 V IN INPUT V IN UT V IN1 V IN V IN4 11 GND 1 V IN3 V IN V IN3 UT2 7 UT3 Top view No.2742/5
3 L6324N,6324NM Test ircuit 1. Input offset voltage VIO 2. Input offset current IIO 1.4V V F1 1.4V V F2 VIO = VF1 1/ IIO = V F2 VF1 (1/) 3. Input bias current IB 1.4V V F3 1.4V V F4 I B = V F4 V F3 2(1/) 4. ommonmode rejection ratio M 5. Voltage gain VG ommonmode input voltage range VIM E 1, E 2 V F5, V F6 L EK1, E K2 V F7, V F M = 2 log (E 1 E2) (1/) VF5 VF6 VG = (E K1 EK2) (1/) VF VF7 6. Supply voltage rejection ratio SV 1, 2 V F9, V F1 1, 2 V F11, V F12 SV () = 2 log (1/) (1 V2) VF9 VF1 SV () = 2 log (1/) (1 VEE2) VF11 VF12 7. hannel separation S a b /2 /2 b a V IN /2 /2 B L L B SW: a S ( B) = 2 log VOB SW: b S (B ) = 2 log B VO These apply also to other channels. No.2743/5
4 L6324N,6324NM. urrent drain I 9. Output current IO source 1. Output current IO sink 1V 1V 4. I V 1 IB V urrent drain, I m Input bias current, IB n Supply voltage, V V Supply voltage, V V 7 IO (source) Ta 16 VG V Output current, IO (source) m Voltage gain, VG db VO f Supply voltage, V V 1 VG f Output voltage amplitude, VOUT Vpp k k k M Frequency, f Hz Voltage gain, VG db k 1k 1k 1M 1M Frequency, f Hz No.2744/5
5 llowable power dissipation, Pd max mw Pd max Ta L6324N,6324NM L6324N llowable power dissipation, Pd max mw Pd max Ta L6324NM Sample pplication ircuits Noninverting D amplifier ectangular wave oscillator Inverting amplifier Specifications of any and all SNYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SNYO Semiconductor o., Ltd. strives to supply highquality highreliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SNYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SNYO Semiconductor o., Ltd. ny and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SNYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SNYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 24. Specifications and information herein are subject to change without notice. PS No.2745/5
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Ordering number : ENA1762A Bi-CMOS IC Step-down Switching Regulator Overview is a 1ch step-down switching regulator. 0.13Ω FET is incorporated on the upper side to achieve high-efficiency operation for
More informationLV5876MX. Specifications Maximum Ratings at Ta = 25 C. Bi-CMOS IC Step-down Switching Regulator
Ordering number : ENA1857 Bi-CMOS IC Step-down Switching Regulator Overview is a 1ch step-down switching regulator. With built-in 0.25Ω power MOSFET switch, it achieves high output current and high efficiency.
More informationTND314S. Monolithic structure (High voltage CMOS process adopted) Withstand voltage of 25V is assured
Ordering number : ENA4A TND314S SANYO Semiconductors DATA SHEET TND314S Features ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE82H110D NCE82H110D TO-263-2L - - -
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationPACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity
DESCRIPTION The SSF1341 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch
More informationSOP-8 Pin Configuration
WSP8 General Description Product Summery The WSP8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous
More informationNCE6005AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationNCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units
Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP0178AK NCEP0178AK TO-252-2L Parameter Symbol Limit Unit
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationV DS =60V,I D =20A R DS(ON) V GS =10V Schematic diagram
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationTO-252 Pin Configuration
WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - -
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE3080K NCE3080K TO-252-2L Parameter Symbol Limit Unit
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More information30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com 30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The is designed to provide a high efficiency synchronous buck power stage with optimal layout and board
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE60P12K NCE60P12K TO-252-2L - - -
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.this device is well suited
More informationunit: mm 4148 Period = 100 ms, duty 1% V CC 2 = 5.0 V
Ordering number : EN4874 Thick Film Hybrid IC STK6877 Reversible Brush-Type DC Motor Driver (output current: 8 A) Overview The STK6877 is an H bridge power pack reversible brushtype DC motor driver that
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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc4 LOW POWER QUAD OPERATIONAL AMPLIFIER DESCRIPTION The µpc4 is a quad operational amplifier which is designed to operate from a single power supply over
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE30H21 NCE30H21 TO Parameter Symbol Limit Unit
NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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