SOP-8 Pin Configuration
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1 WSP8 General Description Product Summery The WSP8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. BVDSS RDSON ID 3V mω.a -3V 8mΩ -5.A Features Advanced high cell density Trench technology Gate Charge Super Low Excellent CdV/dt effect decline % EAS Guaranteed Green Device Available Applications Power management in half bridge and inverters DC-DC Converter Load Switch SOP-8 Pin Configuration D D D D S G S G Absolute Maximum Ratings Symbol Parameter Rating N-Channel P-Channel Units Drain-Source Voltage 3-3 V Gate-Source Voltage ± ± C =5 Continuous Drain V 7 - C = Continuous Drain V - A M Pulsed Drain Current 3-3 A EAS Single Pulse Avalanche Energy mj I AS Avalanche Current -9 A P C =5 Total Power Dissipation W T STG Storage Temperature Range -55 to 5-55 to 5 T J Operating Junction Temperature Range -55 to 5-55 to 5 Thermal Data Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction-Ambient /W R θjc Thermal Resistance Junction-Case /W Page Dec.
2 WSP8 Electrical Characteristics (T J =5, unless otherwise noted) BS Drain-Source Breakdown Voltage =V, =5uA V BS / T J BVDSS Temperature Coefficient Reference to 5, =ma V/ =V, =.A Static Drain-Source On-Resistance =.5V, =5.A (th) Gate Threshold Voltage =, =5uA V (th) Temperature Coefficient mv/ (th) SS Drain-Source Leakage Current =V, =V, T J = =V, =V, T J = I GSS Gate-Source Leakage Current =±V, =V ± na gfs Forward Transconductance =5V, =5A S R g Gate Resistance =V, =V, f=mhz Ω Q g Total Gate Charge (.5V) Q gs Gate-Source Charge =V, =.5V, =A Q gd Gate-Drain Charge T d(on) Turn-On Delay Time T r Rise Time V DD =5V, =V, R G =3Ω T d(off) Turn-Off Delay Time =5A T f Fall Time C iss Input Capacitance C oss Output Capacitance =5V, =V, f=mhz C rss Reverse Transfer Capacitance mω ua nc ns pf Guaranteed Avalanche Characteristics EAS Single Pulse Avalanche Energy 5 V DD =5V, L=.mH, I AS =A mj Diode Characteristics I S Continuous Source Current, V G =V D =V, Force Current A I SM Pulsed Source Current, A V SD Diode Forward Voltage =V, I S =5A, T J = V Note :.The data tested by surface mounted on a inch FR- board with OZ copper,t<sec..the data tested by pulsed, pulse width 3us, duty cycle % 3.The EAS data shows Max. rating. The test condition is V DD =5V, =V,L=.mH,I AS =A.The power dissipation is limited by 5 junction temperature 5.The Min. value is % EAS tested guarantee..the data is theoretically the same as and M, in real applications, should be limited by total power dissipation. Page Dec.
3 WSP8 Electrical Characteristics (T J =5, unless otherwise noted) BS Drain-Source Breakdown Voltage =V, =-5uA V BS / T J BS Temperature Coefficient Reference to 5, =-ma V/ =-V, =-5.A Static Drain-Source On-Resistance =-.5V, =-5.5A (th) Gate Threshold Voltage =, =-5uA V (th) Temperature Coefficient mv/ (th) SS Drain-Source Leakage Current =-V, =V, T J = =-V, =V, T J = I GSS Gate-Source Leakage Current =±V, =V ± na gfs Forward Transconductance =-V, =-A S Q g Total Gate Charge (-.5V) Q gs Gate-Source Charge =-V, =-.5V, =-A Q gd Gate-Drain Charge T d(on) Turn-On Delay Time T r Rise Time V DD =-5V, =-V, R G =3Ω, T d(off) Turn-Off Delay Time R L =.5Ω T f Fall Time C iss Input Capacitance C oss Output Capacitance =-5V, =V, f=mhz C rss Reverse Transfer Capacitance mω ua nc ns pf Guaranteed Avalanche Characteristics EAS Single Pulse Avalanche Energy 5 V DD =-5V, L=.mH, I AS =-A mj Diode Characteristics I S Continuous Source Current, V G =V D =V, Force Current A I SM Pulsed Source Current, A V SD Diode Forward Voltage =V, I S =-A, T J = V Note :.The data tested by surface mounted on a inch FR- board with OZ copper,t<sec..the data tested by pulsed, pulse width 3us, duty cycle % 3.The EAS data shows Max. rating. The test condition is V DD =-5V, =-V,L=.mH,I AS =-A.The power dissipation is limited by 5 junction temperature 5.The Min. value is % EAS tested guarantee..the data is theoretically the same as and M, in real applications, should be limited by total power dissipation. Page 3 Dec.
4 WSP8 N-Channel Typical Characteristics, Drain Current (A) 8 =.,.5V =3.5V =3.V =.8V =.V =.V 3 5, Drain-Source Voltage (V) Figure. Output Characteristics, Drain current(a) o C 5 o C 5 o C -55 o C , Gate-to-source Voltage(V) Figure. Transfer Characteristics C, Capacitance (pf) Ciss Ave(pF) Coss Ave(pF) Crss Ave(pF) 5 5, Drain-to-Source Voltage (V) Figure 3. Capacitance, Normalized,On Resistance (Ohm) =.5V =V Tj, J unction Temperature ( o C) Figure. On Resistance Vs. Temperature. V TH, Gate-Source Threshold Voltage (V).8... I S, Source Drain Current (A) Tj, Junction Temperature ( o C) Figure 5. Gate Thershold Vs. Temperature V SD, Body Diode Forward Voltage (V) Figure. Body Diode Forward Voltage Vs. Source Current Page Dec.
5 WSP8 P-Channel Typical Characteristics n Current (A), Drai =.,.5V =.8V =3.V =.V =.V , Drain-Sou rce Voltage (V) Figure. Output Characteristics n current(a), Drai =.V 5 o C -5 o C 85 o C 5 o C , Gate-to-s ource Voltage(V) Figure. Transfer Characteristics C, Capacitance (pf) 8 Coss Ave(pF) Ciss Ave(pF) Crss Ave(pF) 5 5, Drain-to-Source Voltage (V) Figure 3. Capacitance, Normalized,On Resistance (Ohm) =.5V =V Tj, Junction Te mperature ( o C) Figure. On Resistance Vs. Temperature. V TH, Gate-Source Threshol d Voltage (V) I S, Source Drain Current (A) Tj, Junction Temperature ( o C) Figure 5. Gate Thershold Vs. Temperature V SD, Body Diode Forward Voltage (V) Figure. Body Diode Forward Voltage Vs. Source Current Page Dec.
6 Attention, Any and all Winsok power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Winsok power representative nearest you before using any Winsok power products described or contained herein in such applications.,winsok power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Winsok power products described or contained herein. 3, Specifications of any and all Winsok power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment., Winsok power Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 5,In the event that any or all Winsok power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law., No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Winsok power Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the Winsok power product that you Intend to use. 9, this catalog provides information as of Sep.. Specifications and information herein are subject to change without notice.
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