ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA

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1 nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure Finger,. Micron Geometry with Gold Top Metal Gold Sintered Back Metal Available in tape and reel packaging options: T suffix =, units per reel IC = ma LOW NOISE HIGH FREQUENCY TRANSISTORS CASE, STYLE 6 SOT LOW PROFILE CASE 9, STYLE MRF97T REV Motorola, Inc. 999

2 MAXIMUM RATINGS Rating Symbol MRF97T Unit Collector Emitter Voltage VCEO Vdc Collector Base Voltage VCBO Vdc Emitter Base Voltage VEBO. Vdc Power Dissipation () TC = 7 C Derate linearly above Tcase = 7 nc. PD(max)..9 Collector Current Continuous () IC ma Maximum Junction Temperature TJmax C Storage Temperature Tstg to + to + C.7. Watts mw/ C Thermal Resistance, Junction to Case RθJC C/W DEVICE MARKING = 7Z MRF97T = B ELECTRICAL CHARACTERISTICS (TA = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS () Collector Emitter Breakdown Voltage (IC =. ma, IB = ) Collector Base Breakdown Voltage (IC =. ma, IE = ) Emitter Cutoff Current (VEB =. V, IC = ) Collector Cutoff Current (VCB = V, IE = ) ON CHARACTERISTICS () DC Current Gain (VCE = 6. V, IC =. ma) DYNAMIC CHARACTERISTICS Collector Base Capacitance (VCB = V, IE =, f =. MHz) Current Gain Bandwidth Product (VCE = 6. V, IC = ma, f =. GHz) MRF97T V(BR)CEO Vdc V(BR)CBO Vdc IEBO. µadc ICBO. µadc hfe Ccb.. pf NOTES:. To calculate the junction temperature use TJ = (PD x RθJA) + TCASE. Case temperature measured on collector lead immediately adjacent to body of package.. IC Continuous (MTBF years).. Pulse width µs, duty cycle % pulsed. ft. 9. GHz

3 PERFORMANCE CHARACTERISTICS Conditions Insertion Gain (VCE = 6. V, IC = ma, f =. GHz) (VCE = 6. V, IC = ma, f =. GHz) (VCE =. V, IC = ma, f =. GHz) Maximum Unilateral Gain () (VCE =. V, IC = ma, f =. GHz) (VCE =. V, IC = ma, f =. GHz) (VCE =. V, IC = ma, f =. GHz) Noise Figure Minimum (Figure 9) (VCE = 6. V, IC =. ma, f =. GHz) (VCE = 6. V, IC =. ma, f =. GHz) (VCE = 6. V, IC =. ma, f =. GHz) Associated Gain at Minimum NF (Figure 9) (VCE = 6. V, IC =. ma, f =. GHz) (VCE = 6. V, IC =. ma, f =. GHz) (VCE = 6. V, IC =. ma, f =. GHz) Noise Figure ohm Source (VCE = 6. V, IC =. ma, f =. GHz) NOTE:. Maximum Unilateral Gain is GUmax = nc. S ( S )( S ) Symbol S GU max NFMIN GNF MRF97T Min Typ Max Min Typ Max Unit NF Ω db db db db db

4 nc. TYPICAL CHARACTERISTICS CCB, CAPACITANCE (pf). f = MHz hfe, DC CURRENT GAIN VCE = V. ARCHIVE ft, INFORMATION GAIN BANDWIDTH PRODUCT (GHz). VCB, REVERSE VOLTAGE (V) 6 Figure. Collector Base Capacitance versus Voltage VCE = V 7 7 Figure. Gain Bandwidth Product versus Collector Current S, INSERTION GAIN (db) 6 6 Figure. DC Current Gain versus Collector Current VCE = V f = GHz 7 7 Figure. Insertion Gain versus Collector Current

5 nc. TYPICAL FORWARD INSERTION GAIN AND MAXIMUM UNILATERAL GAIN versus FREQUENCY S, INSERTION GAIN (db) GUmax, MAXIMUM UNILATERAL GAIN (db) S GUmax f, FREQUENCY (GHz) Figure 6. NF, NOISE FIGURE (db) VBE 6 VCE = V IC = ma CIRCUIT FIGURE 9 GNF, ASSOCIATED GAIN AT MINIMUM (db) 6 CIRCUIT FIGURE 9 7 Figure 7. Typical Noise Figure versus Collector Current NF Ω GNF VCE = 6 V IC = ma NFmin f, FREQUENCY, (GHz) VCE = 6 V Figure. Typical Noise Figure and Associated Gain versus Frequency NFmin at GHz NFmin at GHz VCE = 6 Vdc 6 NF, NOISE FIGURE (db) RF INPUT *BIAS NETWORK **SLUG TUNER D.U.T. **SLUG TUNER *BIAS NETWORK RF OUTPUT *HP9B **MICROLAB/FXR **SF N < GHz **SF IN GHz Figure. Functional Circuit Schematic (All Devices)

6 VCE IC f S S S S (Volts) (ma) (MHz) S φ S φ S φ S φ 6.. nc Table. Common Emitter S Parameters 6

7 +j nc. + j. +j + j VCE = 6. V IC =. ma AREA OF INSTABILITY f (GHz) NF OPT (db) ΓMS NF OPT Rn K.6 j. + j.. j. + j. j j Figure 9. Constant Gain and Noise Figure Contours (f =. GHz) +j..6. +j VCE = 6. V IC =. ma AREA OF INSTABILITY f (GHz) NF OPT (db) ΓMS NF OPT Rn...6 K.97 j. j. j j Figure. Constant Gain and Noise Figure Contours (f =. GHz) MRF97T, T 7

8 nc. VCE (Vdc) IC (ma) f (MHz) NFmin (db) Γo (MAG, ANG) rn (ohms) Table. MRF97T Typical Noise Parameters TYPICAL CHARACTERISTICS MRF97T C, CAPACITANCE (pf) Cib Cob Ccb... VR, REVERSE VOLTAGE (VOLTS) Figure. Capacitance versus Voltage hfe, DC CURRENT GAIN VCE = 6 V Figure. DC Current Gain versus Collector Current

9 ft, GAIN-BANDWIDTH PRODUCT (GHz) GAIN (db) 6. 6 VCE = V f = GHz Figure. Gain Bandwidth Product versus Collector Current VCE = 6 V IC = ma..... f, FREQUENCY (GHz) Figure. Insertion Gain and Maximum Stable Power Gain versus Frequency TYPICAL CHARACTERISTICS MRF97T MSG S VCE = 6. V IC =. ma VCE = 6. V IC =. ma f NF j. f NF (GHz) OPT Γ o R N K (GHz) OPT Γ o R N K j. j... db db.. INPUT j.. nc... GNF, ASSOCIATED GAIN (db) GNF, ASSOCIATED GAIN (db) 6 VCE = 6 V f = GHz NF Figure. Associated Gain versus Collector Current NF GNF... OUTPUT GNF f, FREQUENCY (GHz) VCE = 6 V IC = ma Figure 6. Noise Figure and Associated Gain versus Frequency Γ o j.. Γ ms Γo.. j. j. j. N F, NOISE FIGURE (db) NF, NOISE FIGURE (db) j... j..... AREA OF INSTABILITY j. j. j. j. j. j... Figure 7. Constant Gain and Noise Figure Contours f =. GHz.. Figure. Constant Gain and Noise Figure Contours f =. GHz 9

10 S S S S VCE IC f (Vdc) (ma) (MHz) S φ S φ S φ S φ.. nc Table. MRF97T Typical Common Emitter S Parameters (continued)

11 MRF97T S S S S VCE IC f (Vdc) (ma) (MHz) S φ S φ S φ S φ.. nc Table. MRF97T Typical Common Emitter S Parameters (continued)

12 nc. PACKAGE DIMENSIONS A L NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. V D. (.) V G S H A H L B G S C K CASE ISSUE AF, MMBR9ALT B C D R N J K CASE 9 ISSUE J MRF97T J INCHES MILLIMETERS DIM MIN MAX MIN MAX A B.7... C...9. D...7. G H.... J K L...9. S V STYLE 6: PIN. BASE. EMITTER. COLLECTOR NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B.... C D..6.. G.7... H.... J.... K.7 REF. REF L.6 BSC.6 BSC N. REF.7 REF R..9.. S V..6.. STYLE : PIN. BASE. EMITTER. COLLECTOR

13 nc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office,, P.O. Box, Denver, Colorado or 7 Nishi Gotanda, Shinagawa ku, Tokyo, Japan. 7 Customer Focus Center: 67 Mfax : RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; B Tai Ping Industrial Park, Motorola Fax Back System US & Canada ONLY 77 Ting Kok Road, Tai Po, N.T., Hong Kong HOME PAGE: MMBR9 MMBR9/D MRF97

LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA

LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered