NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
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1 NPN SiGe RF ANALOG INTEGRATED CIRCUIT PA901TU NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD DESCRIPTION The PA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. The device is packaged in surface mount 8-pin lead-less minimold plastic package. The device is fabricated with our SiGe HBT process UHS2-HV technology. FEATURES Output Power : Pout = 19 Pin = 3 dbm, VCE = 3.6 V, f = 5.8 GHz Low Power : IC = 90 Pin = 3 dbm, VCE = 3.6 V, f = 5.8 GHz Single Power Supply Operation : VCE = 3.6 V Built-in bias circuit 8-pin lead-less minimold ( mm) APPLICATIONS 5.8 GHz cordless phone 5.8 GHz band DSRC (Dedicated Short Range Communication) system 5.8 GHz video transmitter ORDERING INFORMATION Part Number Order Number Quantity Package Marking Supplying Form PA901TU PA901TU-A 50 pcs (Non reel) 8-pin lead-less A901 8 mm wide embossed taping PA901TU-T3 PA901TU-T3-A 5 kpcs/reel minimold (Pb-Free) Pin 1, Pin 8 face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10538EJ01V0DS (1st edition) Date Published October 2004 CP(K)
2 PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 4.5 V Emitter to Base Voltage VEBO 2 V Collector Current of Q1 IC1 75 ma Collector Current of Q2 IC2 250 ma Bias Current IBIAS 25 ma Total Power Dissipation Ptot Note 410 mw Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Operating Ambient Temperature TA 40 to +85 C Note Mounted on mm (t) glass epoxy PCB (FR-4) THERMAL RESISTANCE (TA = +25 C) Parameter Symbol Test Conditions Ratings Unit Channel to Ambient Resistance Rth (j-a1) Note 150 C/W Note Mounted on mm (t) glass epoxy PCB (FR-4) RECOMMENDED OPERATING RANGE (All Parameter) Rth (j-a2) Free Air TBD C/W Parameter Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage VCE V Total Current Itotal ma Input Power Pin 3 +5 dbm 2 Data Sheet PU10538EJ01V0DS
3 ELECTRICAL CHARACTERISTICS (TA = +25 C) DC CHARACTERISTICS (1) Q1 Collector Cut-off Current ICBO VCB = 5 V, IE = 0 ma 60 na Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 ma 120 na DC Current Gain hfe Note VCE = 3 V, IC = 6 ma Current Ratio (IC (set) 1/IBIAS) CR1 VCE = 3.6 V, VBE = VBIAS = V (2) Q2 Collector Cut-off Current ICBO VCB = 5 V, IE = 0 ma 200 na Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 ma 400 na DC Current Gain hfe Note VCE = 3 V, IC = 20 ma Current Ratio (IC (set) 2/IBIAS) CR2 VCE = 3.6 V, VBE = VBIAS = V (3) Bias Circuit Bias Circuit Current IBIAS VBIAS = V 4 ma Note Pulse measurement: PW 350 s, Duty Cycle 2% IBIAS, IC (set) 1, IC (set) 2 MEASUREMENT CIRCUIT IC (set) 1 = CR1 IBIAS = 4.5 IBIAS (TYP.) IC (set) 2 = CR2 IBIAS = 4.5 IBIAS (TYP.) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10538EJ01V0DS 3
4 ELECTRICAL CHARACTERISTICS (TA = +25 C) RF CHARACTERISTICS (1) Q1 Insertion Power Gain (Q1) S21e 2 VCE = 3.6 V, IC = 12 ma, f = 5.8 GHz db Maximum Available Power Gain (Q1) MAG1 VCE = 3.6 V, IC = 12 ma, f = 5.8 GHz db Output Power (Q1) Pout1 VCE = 3.6 V, IC (set) = 12 ma, f = 5.8 GHz, Pin = 3 dbm Collector Current (Q1) ICC1 VCE = 3.6 V, IC (set) = 12 ma, (2) Q2 f = 5.8 GHz, Pin = 3 dbm dbm 20 ma Insertion Power Gain (Q2) S21e 2 VCE = 3.6 V, IC = 40 ma, f = 5.8 GHz db Maximum Available Power Gain (Q2) MAG2 VCE = 3.6 V, IC = 40 ma, f = 5.8 GHz db Output Power (Q2) Pout2 VCE = 3.6 V, IC (set) = 40 ma, f = 5.8 GHz, Pin = 11 dbm Collector Current (Q2) ICC2 VCE = 3.6 V, IC (set) = 40 ma, (3) Q1 + Q2, 2 stage Amplifiers f = 5.8 GHz, Pin = 11 dbm dbm 70 ma Output Power Pout VCE = 3.6 V, RBIAS = 680, f = 5.8 GHz, Pin = 3 dbm Total Current Itotal VCE = 3.6 V, RBIAS = 680, Note by MEASUREMENT CIRCUIT 1 f = 5.8 GHz, Pin = 3 dbm Note Note ma 90 ma 4 Data Sheet PU10538EJ01V0DS
5 MEASUREMENT CIRCUIT 1 IC (set) 1 = CR1 IBIAS = 4.5 IBIAS (TYP.) IC (set) 2 = CR2 IBIAS = 4.5 IBIAS (TYP.) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PU10538EJ01V0DS 5
6 ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Remarks 1. Substrate : (t) mm FR-4 (4 Layer, each thickness 0.2 mm), copper thickness 18 m, gold flash plating 2. Back side : GND pattern 3. : Through hole USING THE EVALUATION BOARD Symbol Values Symbol Values R1 680 C2 0.5 pf R2 10 C3 0.5 pf R3 10 C4 1.0 pf R4 10 C pf R5 10 C6 1.0 pf L1 100 nh C7 1.0 pf L2 5.6 nh C8 1.0 pf L3 5.6 nh C9 1.0 pf L4 12 nh C10 10 nf C pf C11 10 nf 6 Data Sheet PU10538EJ01V0DS
7 TYPICAL CHARACTERISTICS (TA = +25 C, VCE = 3.6 V, RBIAS = 680, f = 5.8 GHz, unless otherwise specified) Remark The graphs indicate nominal characteristics. Data Sheet PU10538EJ01V0DS 7
8 PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) Remark ( ) : Reference value 8 Data Sheet PU10538EJ01V0DS
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FEATURE High gain, low noise Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) DATA SHEET PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
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DATA SHEET NE68133 / 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Document No. P6EJVDS (th edition) Date Published March 997 N DATA SHEET SILICON TRANSISTOR NE68 / SC8 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68 / SC8 is an NPN
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2STR1160. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
DISCONTINUED PG2012TK. GaAs INTEGRATED CIRCUIT L-BAND SPDT SWITCH DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION
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CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
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TSH69 4MHz to 1GHz AMPLIFIER 1.5V to 5V OPERATING VOLTAGE 28dB GAIN @ 3V @ 45MHz. 2dB GAIN @ 3V @ 9MHz +13.5dBm OUTPUT POWER (P1dB) BIAS PIN FOR CURRENT ADJUST & AMPLIFIER DISABLE. ADJUSTABLE OUTPUT POWER
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Table 1: Device summary Order code Marking Package Packing 2STR SOT-23 Tape and reel
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DATA SHEET NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 15 A
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LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
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