NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG)
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1 FEATURES NPN SILICON GERMANIUM RF TRANSISTOR NESG NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) This product is suitable for medium output power (1 W) amplification Pout = 30 dbm VCE = 6 V, Pin = 15 dbm, f = 460 MHz Pout = 30 dbm VCE = 6 V, Pin = 20 dbm, f = 900 MHz MSG (Maximum Stable Gain) = 23 db VCE = 6 V, Ic = 100 ma, f = 460 MHz Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG NESG AZ 3-pin power minimold (Pb-Free) Note1, 2 Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge 25 pcs (Non reel) Magazine case NESG T1 NESG T1-AZ 1 kpcs/reel 12 mm wide embossed taping Notes 1. Contains Lead in the part except the electrode terminals. Pin 2 (Emitter) face the perforation side of the tape 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V Collector Current IC 600 ma Total Power Dissipation Ptot Note 1.9 W Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 34.2 cm mm (t) glass epoxy PWB Document No. PU10547EJ02V0DS (2nd edition) Date Published May 2005 CP(K) The mark shows major revised points.
2 THERMAL RESISTANCE (TA = +25 C) Parameter Symbol Ratings Unit Termal Resistance from Junction to Ambient Note Rthj-a 65 C/W Note Mounted on 34.2 cm mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25 C) Parameter Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage VCE V Collector Current IC ma Input Power Note Pin dbm Note Input power under conditions of VCE 6.0 V, f = 460 MHz 2 Data Sheet PU10547EJ02V0DS
3 ELECTRICAL CHARACTERISTICS (TA = +25 C) DC Characteristics Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 9.2 V, IE = 0 ma 1 A Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 ma 1 A DC Current Gain hfe Note VCE = 3 V, IC = 100 ma RF Characteristics Linner Gain (1) GL f = 460 MHz, Pin = 0 dbm Linner Gain (2) GL f = 900 MHz, Pin = 0 dbm Output Power (1) Pout f = 460 MHz, Pin = 15 dbm Output Power (2) Pout f = 900 MHz, Pin = 20 dbm Collector Efficiency (1) C f = 460 MHz, Pin = 15 dbm Collector Efficiency (2) C f = 900 MHz, Pin = 20 dbm Note Pulse measurement: PW 350 s, Duty Cycle 2% hfe CLASSIFICATION Rank Marking FB SP hfe Value 80 to db 19 db dbm 30.0 dbm 50 % 60 % Data Sheet PU10547EJ02V0DS 3
4 TYPICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10547EJ02V0DS
5 Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 5
6 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10547EJ02V0DS
7 S-PARAMETERS PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 7
8 EVALUATION CIRCUIT (f = 460 MHz) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. EVALUATION BOARD (f = 460 MHz) Notes mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes 8 Data Sheet PU10547EJ02V0DS
9 COMPONENT LIST Component Maker Value Size (TYPE) Purpose C1 Murata 10 pf 1005 Input DC Block/Input RF Matching C2 Murata 4 pf 1005 Input RF Matching C3 Murata 33 pf 1005 Input DC Block/Output RF Matching C4 Murata pf 1005 RF GND C5 Murata 1 F 1608 RF GND L1 Toko 68 nh 1005 RF Block/Input RF Matching L2 Toko 33 nh LLQ2021 RF Block/Output RF Matching L3 Toko 1 nh 1005 Input RF Matching L4 Toko 8.2 nh 1005 Input RF Matching L5 Toko 8.2 nh LLQ2021 Output RF Matching R1 SSM Improve Stability Data Sheet PU10547EJ02V0DS 9
10 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 10 Data Sheet PU10547EJ02V0DS
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DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hfe at low
BIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc8tn SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.45 db TYP., Ga =
DISCONTINUED PG2012TK. GaAs INTEGRATED CIRCUIT L-BAND SPDT SWITCH DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION
DESCRIPTION L-BAND SPDT SWITCH GaAs INTEGRATED CIRCUIT PG2012TK The PG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application.
DISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATION
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured
NEC's NPN SILICON TRANSISTOR
NEC's NPN SILICON TRANSISTOR NE81M1 FEATURES OUTLINE DIMENSIONS (Units in mm) NEW MINIATURE M1 PACKAGE: Small transistor outline 1. X. X. mm Low profile /. mm package height Flat lead style for better
DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 4.0 A
DATA SHEET SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices
PRELIMINARY DATA SHEET PACKAGE OUTLINE
PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: :NF = 1.7 db TYP at f = GHz,, lc = 3 ma :NF = 1.5 db TYP at f = GHz, VCE = 3 V, lc = 3 ma HIGH GAIN: : S1E = 3.5 db TYP
DISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION FEATURES APPLICATION
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using
13 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS
DESCRIPTION BIPOLAR DIGITAL INTEGRATED CIRCUIT GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS The is a silicon germanium (SiGe) monolithic integrated circuit designed as a divide by 4
NEC's NPN SILICON TRAN SIS TOR PACKAGE OUTLINE M03
FEATURES MINIATURE M PACKAGE: Small tran sis tor outline Low profile /.9 mm package height Flat lead style for better RF performance IDEAL FOR > GHz OSCILLATORS LOW NOISE, HIGH GAIN LOW Cre UHSO GHz PROCESS
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure, high associated gain and middle output power NF = 0.3 db TYP., Ga = 12.5
BIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc279tb 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µpc279tb is a silicon monolithic integrated circuit designed as
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
DATA SHEET NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 15 A
DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching,
BIPOLAR ANALOG INTEGRATED CIRCUITS
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µpc279tb 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc279tb is a silicon monolithic integrated circuits designed as 1st
Old Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took
DATA SHEET NPN SILICON POWER TRANSISTOR. 55 to +150 C 150 C Maximum
DATA SHEET NPN SILON POWER TRANSISTOR 2SD882 NPN SILON POWER TRANSISTOR DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC
SIEGET 25 BFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For High Gain Low Noise Amplifiers For Oscillators up to GHz Noise Figure F = 1.05 at 1.8 GHz Outstanding G ms = 20 at 1.8 GHz Transition Frequency f T = 25 GHz Gold metalization
SiGe:C LOW NOISE AMPLIFIER FOR GPS
DESCRIPTION The µpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics,
2SC5645. unit : mm 2106A 0.3 3
Ordering number : ENN688 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features Low noise : NF=1.dB typ (f=ghz). High cutoff frequency : ft=ghz typ (VCE=).
DATA SHEET. N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
DATA HEET LDMO FIELD EFFECT TRANITOR NE55410GR N-CHANNEL ILICON POWER LDMO FET FOR 2 W + 10 W VHF to L-BAND INGLE-END POWER AMPLIFIER DECRIPTION The NE55410GR is an N-channel enhancement-mode LDMO FET
BIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc322gr LOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV DESCRIPTION The µpc322gr is a silicon monolithic IC designed for use as IF down-converter for digital
2SC5245A. RF Transistor 10V, 30mA, ft=8ghz, NPN Single MCP. Features. Specifications. : NF=1.4dB typ (f=1.5ghz) High gain
Ordering number : ENA1A SCA RF Transistor 1V, ma, ft=ghz, NPN Single MCP http://onsemi.com Features Low-noise : NF=.9dB typ (f=1ghz) : NF=1.dB typ (f=1.ghz) High gain : S1e =1dB typ (f=1.ghz) High cut-off
BIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc278tb 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc278tb is a silicon monolithic integrated circuit designed as buffer
Part Number Order Number Package Marking Supplying Form PD5750T7D-E4A PD5750T7D-E4A-A 6-pin WLBGA (T7D) (Pb-Free)
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION Data Sheet The PD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.
2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications
Ordering number : ENA19A SC4A RF Transistor 1V, 1mA, ft=.ghz, NPN Single SMCP http://onsemi.com Features High gain : S1e =1.dB typ (f=1ghz) High cut-off frequency : ft=.ghz typ Specifications Absolute
BIPOLAR ANALOG INTEGRATED CIRCUITS
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µpc275tb and µpc27tb are silicon monolithic integrated circuits
L, S-BAND SPDT SWITCH
DESCRIPTION The µpg8tk is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate control switching
15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
PHOTOCOUPLER PS2706-1
PHOTOCOUPLER PS2706-1 AC INPUT RESPONSE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2706-1 is an optically coupled isolator containing a GaAs light emitting diode
DATA SHEET NE68133 / 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Document No. P6EJVDS (th edition) Date Published March 997 N DATA SHEET SILICON TRANSISTOR NE68 / SC8 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68 / SC8 is an NPN
CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor
PHOTOCOUPLER PS2505-1,-2,-4,PS2505L-1,-2,-4
PHOTOCOUPLER PS25-1,-2,-4,PS25L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS25-1, -2, -4 and PS25L-1, -2, -4 are optically coupled isolators
PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4
PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are