UHF POWER TRANSISTOR
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1 NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device, depending on the specific application. FEATURES o.8 Volt operation o P1dB 8 o Power gain 8.5 APPLICATIONS o Hand-held radio equipment in common emitter class-ab operation in 9 MHz communication band. PIN CONFIGURATION PIN NO SYMBOL DESCRIPTION 1 E emitter B base 3 E emitter C collector MAXIMUM RATINGS SYMBOL PARAMETER CONDITION VALUE Unit VCBO Collector-Base Voltage Open Emitter VCEO Collector-Emitter Voltage Open Base VEBO Emitter-Base Voltage Open Collector Ic Collector Current (DC) PT Total Power Dissipation Ts = 6 ; note 1 TSTG TJ Storage Temperature Operating Junction Temperature ~ V V V ma W - 1/7 - Sep-3- nd Edition
2 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITION VALUE Unit Rth j-s thermal resistance from junction to soldering point PT=1W; Ts=6 ;note1 55 K/W * Note 1. Ts is temperature at the soldering point of the collector pin. QUICK REFERENCE DATA RF performance at Ts 6 in common emitter test circuit (see Fig 8.) Mode of Operation f [MHz] VCE [V] PL [mw] CW, class-ab GP [db] 7 C [%] - /7 - Sep-3- nd Edition
3 DC CHARACTERISTICS Tj=5 unless otherwise specified SYMBOL PARAMETER CONDITION MIN. MAX. UNIT BVCBO collector-base breakdown voltage open emitte V BVCEO collector-emitter breakdown voltage open base 8 V BVEBO emitter-base breakdown voltage open collector 3 V IS collector leakage current.1 ma hfe DC current gain 6 CCB collector capacitance.5 pf 16 6 Hfe Ic(A) Fig 1. DC Current gain v.s Collector current Fig. Collector-base capacitance v.s Collectorbase voltage(dc) - 3/7 - Sep-3- nd Edition
4 APPLICATION INFORMATION (I) RF performance at Ts 6 in common emitter test circuit (see Fig 7) Mode of Operation f [MHz] VCE [V] PL [mw] GP [db] C [%] CW, class-ab η C [%] Fig 3. Power gain and collector efficiency v.s load power (typical value) Fig. Load power v.s input power (typical value) Typical Large Signal Impedance VCE =.8V, ICQ = 5mA, Pout = 8dBm source load Mag Ang Mag Ang /7 - Sep-3- nd Edition
5 APPLICATION INFORMATION (II) RF performance at Ts 6 in common emitter configuration. (ICQ = 5mA) Mode of Operation f [MHz] VCE [V] PL [mw] CW, class-ab GP [db] C [%] 1 Input/Load Impedance as a frequency Transister Impedance Freq. [MHz] Zin rin xin RL Zin 35 Zin 15 [Ω] rin xin [Ω] XL RL Freq [MHz] Freq [MHz] Fig 5. Input Impedance (series components) as Fig 6. Load Impedance (series components) as a freq, typical values. a freq, typical values /7 - Sep-3- nd Edition
6 Part List C1, C11 1nF C, C1 1nF C3, C, C8, C9 1pF C5 C7 R1 6pF pf. R, R3 1 L1, L 5nH Fig 7. Test Circuit Board f = 9MHz Test board : FR glass epoxy board, dielectric constant =.5, thickness =.8 mm Test condition : CW test, VCC =.8 V, ICQ = 5 ma, frequency = 9 MHz. 9, MHz 9, MHz Fig 8. Test Circuit Schematic = 9MHz - 6/7 - Sep-3- nd Edition
7 PACKAGE DIMENSION Fig 9. SOT-3 Package dimension - 7/7 - Sep-3- nd Edition
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
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Please call sales office for
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE SERIES FEATURES HIGH INSERTION GAIN: 8.5 db at 5 MHz LOW NOISE FIGURE:.5 db at 5 MHz HIGH POWER GAIN: db at GHz LARGE DYNAMIC RANGE: 9 dbm at db, GHz Gain
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NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG)
FEATURES NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) This product is suitable for medium output power
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
NPN SILICON HIGH FREQUENCY TRANSISTOR 2.0 ± ± 0.1
FEATURES SMALL PACKAGE STYLE: NE686 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 9 db TYP at GHz HIGH GAIN BANDWIDTH: ft = 13 GHz LOW CURRENT OPERATION DESCRIPTION
CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape
DATA SHEET NE677M04 / 2SC5751. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE677M4 / 2SC71 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (3 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD Ideal for medium output power
techniques, and gold metalization in the fabrication of this device.
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2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
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PT23T2222A NPN switching transistor
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DATA SHEET NE67818 / 2SC5752. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mw) 4-PIN SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE67818 / 2SC72 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (6 mw) 4-PIN SUPER MINIMOLD Ideal for medium output power amplification PO
50 Vdc Collector-Base Voltage VCEO. 50 Vdc Collector Current-Continuous VCBO. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit
MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO
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PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (1) at 70 C Case RθJC 7.0 C/W. Characteristic Symbol Min Typ Max Unit
SEICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for 9 Hz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold
140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features
AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet
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NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD. Part Number Quantity Supplying Form
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SD1731 (TH562) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS. OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS OPTIMIZED FOR SSB 30 MHz 50 VOLTS. EFFICIENCY 40% COMMON EMITTER. GOLD METALLIZATION POUT = 220 W PEP WITH 13 db GAIN.500 4LFL (M174) epoxy sealed ORDER CODE
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
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SILICON TRANSISTOR 2SC4227
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NPN SILICON RF TWIN TRANSISTOR
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SIEGET 25 BFP420. NPN Silicon RF Transistor
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PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
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PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
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PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
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DISCRETE SEMICONDUCTORS DATA SHEET UHF linear push-pull power transistor September 1991 FEATURES High power gain Double stage internal input matching for high input impedance Diffused emitter-ballasting
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX
FEATURES HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT- 33 package SUPPLY VOLTAGE: VCC =. to. V WIDEBAND RESPONSE: : fu =.9 GHz TYP : fu =. GHz TYP POWER GAIN: : GP = 13 db TYP : GP = db TYP
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed
5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER
V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER UPC278TB FEATURES GAIN vs. FREQUENCYand TEMPERATURE HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT-33 package HIGH GAIN: 1 db TYP SATURATED OUTPUT
Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according
LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features OIP3 = 43.0 dbm @ 900 MHz Gain = 20.0 db @ 900 MHz Output P1 db = 24.5 dbm @ 900 MHz 50 Ω Cascadable Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BT09AG is a
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
Data Sheet, Rev. 2.3, Sept BGA428. Gain and PCS Low Noise Amplifier. RF & Protection Devices
Data Sheet, Rev. 2.3, Sept. 2011 BGA428 Gain and PCS Low Noise Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG
DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
DATA SHEET FEATURE Ideal for medium-output applications High gain, low noise Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 5 C) PARAMETER SYMBOL RATING UNIT
NEC's NPN SILICON TRANSISTOR. ñ EIAJ 1 REGISTERED NUMBER PACKAGE OUTLINE
FEATURES NEW MINIATURE M PACKAGE: Small transistor outline. X. X. mm Low profile /. mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: ft = GHz LOW NOISE FIGURE: =.
NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous
Table 1: Device summary Order code Marking Package Packing 2STR SOT-23 Tape and reel
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
Typical Performance 1. IS-95C ACPR dbm WCDMA ACLR dbm
Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package
DESCRIPTION FEATURES The is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package ORDERING INFORMATION APPLICATIONS Package Type SC-70 Part Number
Pin (dbm ) Ceramic Micro-X Gigamite Plastic
This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable
NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single
NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has
15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, NF min = 1 db at 900 MHz Pbfree (RoHS compliant) package Qualification
DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
DATA SHEET SILICON TRANSISTOR SC6 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hfe = TYP. (VCE = 6. V, IC =. ma) High Voltage: VCEO
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.
Device Features NF = 0.95 db @ 900MHz at RF connectors of Demo board Gain = 20.5 db @ 900 MHz OIP3 = 30.0 dbm @ 1900MHz Output P1 db = 17.5 dbm @ 900MHz 5V/27mA, MTTF > 100 Years, MSL 1, Class 0 Lead-free/RoHS-compliant