Agilent AT Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet
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1 Agilent AT-135 Up to GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Agilent s AT-135 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-135 is housed in a cost effective surface mount 1 mil micro-x package. The micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 1 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 5Ω at 1 GHz, makes this device easy to use as a low noise amplifier. 35 micro-x Package The AT-135 bipolar transistor is fabricated using Agilent s 1 GHz ft Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features Low Noise Figure: 1.7 db Typical at 3. db Typical at. GHz High Associated Gain: 1. db Typical at 1. db Typical at. GHz High Gain-Bandwidth Product:. GHz Typical f T Cost Effective Ceramic Microstrip Package Lead-free Option Available
2 AT-135 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V I C Collector Current ma P T Power Dissipation [,3] mw 5 T j Junction Temperature C T STG Storage Temperature [] C -5 to Notes: 1. Permanent damage may occur if any of these limits are exceeded.. T CASE = 5 C. 3. Derate at 5 mw/ C for T C > 1 C.. Storage above + C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θ jc than do alternate methods. See MEASURE- MENTS section Thermal Resistance for more information. Thermal Resistance [,5] : θ jc = C/W Electrical Specifications, T A = 5 C Symbol Parameters and Test Conditions Units Min. Typ. Max. S 1E Insertion Power Gain; V CE = V, I C = 5 ma f = db 11.5 f =. GHz. P 1 db Power 1 db Gain Compression f = dbm 19. V CE = V, I C = 5 ma f =. GHz 1.5 G 1 db 1 db Compressed Gain; V CE = V, I C = 5 ma f = db 1. f =. GHz 9.5 Optimum Noise Figure: V CE = V, I C = 1 ma f = 1. GHz db 1.3 f = 1.7. f =. GHz 3. ; V CE = V, I C = 1 ma f = 1. GHz db 1.5 f = f =. GHz 1. f T Gain Bandwidth Product: V CE = V, I C = 5 ma GHz. h FE Forward Current Transfer Ratio; V CE = V, I C = 1 ma 3 7 I CBO Collector Cutoff Current; V CB = V µa. I EBO Emitter Cutoff Current; V EB = 1 V µa 1. C CB Collector Base Capacitance [1] : V CB = V, f = 1 MHz pf. Note: 1. For this test, the emitter is grounded.
3 3 AT-135 Typical Performance, T A = 5 C NF 5 Ω FREQUENCY (GHz) Figure 1. Noise Figure and Associated Gain vs. Frequency. V CE = V, I C = 1 ma. NF (db) G1 db (db) P1 db (dbm) P 1dB G 1dB 1 3. GHz. GHz Figure. Output Power and 1 db Compressed Gain vs. Collector Current and Frequency. V CE = V V V V V V 1 V Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f =. 3 1 (db) 1 1. GHz. GHz (db) MSG S 1E MAG S1E 1. GHz. GHz 1 3 Figure. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. V CE = V FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = V, I C = 5 ma. 1 3 Figure. Insertion Power Gain vs. Collector Current and Frequency. V CE = V.
4 AT-135 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =5 C, V CE = V, I C = 1 ma Freq. S 11 S 1 S S GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang AT-135 Typical Scattering Parameters, Common Emitter, Z O = 5 Ω, T A =5 C, V CE = V, I C = 5 ma Freq. S 11 S 1 S S GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang A model for this device is available in the DEVICE MODELS section. AT-135 Noise Parameters: VCE = V, IC = 1 ma Freq. NF Γ O opt GHz db Mag Ang R N /
5 Ordering Information Part Numbers No. of Devices AT AT-135G 1 Note: Order part number with a G suffix if lead-free option is desired. 35 micro-x Package Dimensions.5. EMITTER.3.11 DIA. BASE 1 COLLECTOR 1 3 EMITTER ± ± Notes: (unless otherwise specified) 1. Dimensions are in. Tolerances mm in.xxx = ±.5 mm.xx = ± ± ±.75. ±.. ±.5 For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 () 35-3 or (9) 7-73 Europe: +9 () 1 9 China: Hong Kong: (5) India, Australia, New Zealand: (5) Japan: (+1 3) 3335-(Domestic/International), or -1-(Domestic Only) Korea: (5) Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (5) 755 Taiwan: (5) Data subject to change. Copyright 5 Agilent Technologies, Inc. Obsoletes EN March, EN
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Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
Agilent HLMP-LD15, HLMP-LM15, HLMP-LB15 4mm Precision Optical Performance Red, Green and Blue Standard Oval LEDs Data Sheet
Description These Precision Optical Performance Oval LEDs are specifically designed for full color/video and passenger information signs. The oval shaped radiation pattern and high luminous intensity ensure
2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier
NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
SOT3 BFTA Rev. September Product data sheet. Product profile. General description The BFTA is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones
SILICON TRANSISTOR 2SC4227
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4227 DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ68 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor mounted in a four-lead dual-emitter SOTA envelope with a ceramic cap. All leads
LM3146 High Voltage Transistor Array
LM3146 High Voltage Transistor Array General Description The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION
Data Sheet. 2Tx. ADA-4643 Silicon Bipolar Darlington Amplifier. Description. Features. Specifications. Applications. Surface Mount Package
ADA- Silicon Bipolar Darlington Amplifier Data Sheet Description Avago Technologies ADA- is an economical, easy-touse, general purpose silicon bipolar RFIC gain block amplifiers housed in a -lead SC-7
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/ NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4226 DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF
NPN wideband silicon RF transistor
Rev. 2 11 January 211 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
DATA SHEET NE97833 / 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER. Parameter Symbol Test Conditions MIN. TYP. MAX.
DATA SHEET Silicon Transistor NE97833 / SA978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High ft (in milimeters) ft = 5.5 GHz TYP. Se =. db TYP. @f =. GHz, VCE = V,
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
Applications Lighted Switches Backlighting Front Panels Light Pipe Sources Keyboard Indicators
T-1 3 /4 (5 mm), T-1 (3 mm), Ultra-Bright LED Lamps Technical Data HLMP-3707, -3807, -3907 HLMP-3750, -3850, -3950, -3960 HLMP-3390, -3490, -3590 HLMP-1340, -1440, -1540 HLMP-D640 HLMP-K640 Features Improved
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating