Cascadable Silicon Bipolar MMIC Amplifier. Technical Data MSA-0686

Transcription

1 Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-686 Features Cascadable Ω Gain Block Low Operating Voltage:. V Typical V d db Bandwidth: DC to.8 GHz High Gain: 8. db Typical at. GHz Low Noise Figure:. db Typical at. GHz Surface Mount Plastic Package Tape-and-Reel Packaging Available [] Note:. Refer to PACKAGING section Tapeand-Reel Packaging for Surface Mount Semiconductors. Description The MSA-686 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose Ω gain block. Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP s GHz ft, GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 86 Plastic Package Typical Biasing Configuration R bias VCC > V RFC (Optional) IN C block MSA V d =. V C block OUT E 6-8

2 MSA-686 Absolute Maximum Ratings Parameter Absolute Maximum [] Device Current ma Power Dissipation [,] mw RF Input Power + dbm Junction Temperature C Storage Temperature 6 to C Notes:. Permanent damage may occur if any of these limits are exceeded.. T CASE = C.. Derate at 8. mw/ C for T C > 6 C.. See MEASUREMENTS section Thermal Resistance for more information. Thermal Resistance [,] : θ jc = C/W Electrical Specifications [], T A = C Symbol Parameters and Test Conditions: I d = 6 ma, Z O = Ω Units Min. Typ. Max. G P Power Gain ( S ) f =. GHz db. f =. GHz GP Gain Flatness f =. to. GHz db ±.7 f db db Bandwidth GHz.8 VSWR Input VSWR f =. to. GHz.7: Output VSWR f =. to. GHz.7: NF Ω Noise Figure f =. GHz db. P db Output Power at db Gain Compression f =. GHz dbm. IP Third Order Intercept Point f =. GHz dbm. t D Group Delay f =. GHz psec V d Device Voltage V.8.. dv/dt Device Voltage Temperature Coefficient mv/ C 8. Notes:. The recommended operating current range for this device is to ma. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number No. of Devices Container MSA-686-TR 7" Reel MSA-686-BLK Antistatic Bag For more information, see Tape and Reel Packaging for Semiconductor Devices. 6-8

3 MSA-686 Typical Scattering Parameters (Z O = Ω, T A = C, I d = 6 ma) Freq. S S S S GHz Mag Ang db Mag Ang db Mag Ang Mag Ang k Note:. A model for this device is available in the DEVICE MODELS section. Typical Performance, T A = C (unless otherwise noted) G p (db) I d = 6 ma I d = ma Gain Flat to DC Figure. Typical Power Gain vs. Frequency, T A = C. I d = ma I d = ma I d (ma) T C = +8 C T C = + C T C = C V d (V) Figure. Device Current vs. Voltage.. Gp (db) P db (dbm) TEMPERATURE ( C) G P NF P db Figure. Output Power at db Gain Compression, NF and Power Gain vs. Case Temperature, f =. GHz, I d =6mA. NF (db) 8 I d = ma. P db (dbm) I d = 6 ma NF (db). I d = ma Figure. Output Power at db Gain Compression vs. Frequency.. I d = ma I d = 6 ma, ma I d = ma Figure. Noise Figure vs. Frequency. 6-8

4 86 Plastic Package Dimensions. ±. (. ±.) GROUND RF INPUT A6 RF OUTPUT AND DC BIAS C L. ±.8 (.9 ±.) GROUND. ±. (.6 ±.).67 ±.8 (. ±.) TYP.. ±. (.6 ±.).66 ±. (.6 ±.). MIN (. MIN).6 ±. (.8 ±.) 8 MAX MIN DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-8

5 This datasheet has been download from: Datasheets for electronics components.