Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package

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1 AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is housed in a low cost.85" diameter plastic package. The micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 5Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-85 bipolar transistor is fabricated using Avago s 1 GHz ft Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features High Output Power:.5 dbm Typical P1 db at 2. GHz High Gain at 1 db Compression: 1. db Typical G1 db at 2. GHz Low Noise Figure: 2. db Typical NFO at 2. GHz High Gain-Bandwidth Product: 8. GHz Typical ft Low Cost Plastic Package Lead-free Option Available 85 Plastic Package

2 AT-85 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum [1] V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V V CEO Collector-Emitter Voltage V I C Collector Current ma 8 P T Power Dissipation [2,] mw 5 T j Junction Temperature C 15 T STG Storage Temperature C -65 to 15 Thermal Resistance [2,] : θ jc = 1 C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25 C.. Derate at 7.7 mw/ C for Tc > 85 C.. See MEASUREMENTS section Thermal Resistance for more information. Electrical Specifications, T A = 25 C Symbol Parameters and Test Conditions Units Min. Typ. Max. S 21E 2 Insertion Power Gain; V CE = 8 V, I C = 5 ma f = 1. GHz db f = 2. GHz 11. f =. GHz 5. P 1 db Power 1 db Gain Compression f = 2. GHz dbm.5 V CE = 8 V, I C = 5 ma f=. GHz. G 1 db 1 db Compressed Gain; V CE = 8 V, I C = 5 ma f = 2. GHz db 1. f =. GHz 9.5 NF O Optimum Noise Figure: V CE = 8 V, I C = 1 ma f = 2. GHz db. f =. GHz.5 G A NF O ; V CE = 8 V, I C = 1 ma f = 2. GHz db 1.5 f =. GHz 9.5 f T Gain Bandwidth Product: V CE = 8 V, I C = 5 ma GHz 8. h FE Forward Current Transfer Ratio; V CE = 8 V, I C = 5 ma I CBO Collector Cutoff Current; V CB = 8 V µa.2 I EBO Emitter Cutoff Current; V EB = 1 V µa. C CB Collector Base Capacitance [1] : V CB = 8 V, f = 1 MHz pf.2 Note: 1. For this test, the emitter is grounded.

3 AT-85 Typical Performance, T A = 25 C S21E 2 GAIN (db) 8 1. GHz 2. GHz. GHz G1 db (db) P1 db (dbm) 2 8 P 1dB G 1dB 2. GHz. GHz 2. GHz. GHz G1 db (db) P1 db (dbm) 2 1 P 1dB G 1dB 1 V 6 V V 1 V 6 V V 1 5 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. V CE = 8 V. 1 5 Figure 2. Output Power and 1 db Compressed Gain vs. Collector Current and Frequency. V CE = 8 V Figure. Output Power and 1 db Compressed Gain vs. Collector Current and Voltage. f = 2. GHz. 2 5 MSG G A GAIN (db) S 21E 2 MAG GAIN (db) NF O 2 1 NFO (db) FREQUENCY (GHz) Figure. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = 8 V, I C = 5 ma FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. V CE = 8 V, I C = 1 ma.

4 AT-85 Typical Scattering Parameters, Common Emitter, ZO = 5 Ω, TA = 25 C, VCE = 8 V, IC = 1 ma Freq. S 11 S 21 S S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang AT-85 Typical Scattering Parameters, Common Emitter, ZO = 5 Ω, TA = 25 C, VCE = 8 V, IC = 5 ma Freq. S 11 S 21 S S 22 GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang A model for this device is available in the DEVICE MODELS section. AT-85 Noise Parameters: V CE = 8 V, I C = 1 ma Freq. NF O Γ opt GHz db Mag Ang R N /

5 Ordering Information Part Numbers No. of Devices AT-85 1 AT-85G 1 Note: Order part number with a G suffix if lead-free option is desired. 85 Plastic Package Dimensions..51 EMITTER 5 1 BASE.6 ± ±.25 EMITTER 5 TYP..1 ±.15.6 ±.8 COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances mm 2 in.xxx = ±.5 mm.xx = ± ±.2.15 ± ±. 7.6 ±.76 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 8 Avago Technologies, Limited. All rights reserved. Obsoletes EN AV2-19EN May 5, 8

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:

Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power: AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed