DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

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1 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 November 1992

2 DESCRIPTION PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A. PIN DESCRIPTION Code: W1p 1 base 2 emitter 3 collector page Top view MSB3 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CBO collector-base voltage open emitter 2 V V CEO collector-emitter voltage open base 15 V I C DC collector current 25 ma P tot total power dissipation up to T s = 95 C; note 1 3 mw f T transition frequency I C = 14 ma; V CE = 1 V; f = 5 MHz 5 GHz C re feedback capacitance I C = 2 ma; V CE = 1 V; f = 1 MHz.7 pf G UM maximum unilateral power gain I C = 14 ma; V CE = 1 V; 18 db f = 5 MHz; T amb =25 C F noise figure I C = 5 ma; V CE = 1 V; f = 5 MHz; 2.5 db T amb =25 C d im intermodulation distortion I C = 14 ma; V CE = 1 V; R L =75Ω; V o = 15 mv; T amb =25 C; f (p+q-r) = MHz 6 db Note 1. T s is the temperature at the soldering point of the collector tab. November

3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 2 V V CEO collector-emitter voltage open base 15 V V EBO emitter-base voltage open collector 2 V I C DC collector current 25 ma I CM peak collector current f > 1 MHz 35 ma P tot total power dissipation up to T s =95 C; note 1 3 mw T stg storage temperature C T j junction temperature 175 C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE thermal resistance from junction to up to T s =95 C; note 1 26 K/W soldering point R th j-s Note 1. T s is the temperature at the soldering point of the collector tab. November

4 CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = 1 V; 5 na h FE DC current gain I C = 14 ma; V CE = 1 V 2 5 f T transition frequency I C = 14 ma; V CE = 1 V; 5 GHz f = 5 MHz C c collector capacitance I E =i e = ; V CB = 1 V; f = 1 MHz.75 pf C e emitter capacitance I C =i c = ; V EB =.5 V; f = 1 MHz.8 pf C re feedback capacitance I C = 2 ma; V CE = 1 V; f = 1 MHz.7 pf G UM maximum unilateral power gain (note 1) I C = 14 ma; V CE = 1 V; f = 5 MHz; T amb =25 C Notes 1. G UM is the maximum unilateral power gain, assuming S 12 is zero and 2. d im = 6 db (DIN 454B); I C = 14 ma; V CE = 1 V; R L =75Ω; V p =V o at d im = 6 db; f p = MHz; V q =V o 6 db; f q = MHz; V r =V o 6 db; f r = MHz; measured at f (p+q-r) = MHz. 18 db F noise figure I C = 5 ma; V CE = 1 V; 2.5 db f = 5 MHz; T amb =25 C V o output voltage note 2 15 mv S 21 2 G UM = 1 log db S 11 1 S 22 November

5 24 V 1 MEA Ω L3 3.9 kω 82 Ω h FE 75 3 Ω 75 Ω L2 68 pf L1 68 pf 68 pf DUT 75 Ω Ω L2 = L3 = 5 µh Ferroxcube choke, catalogue number L1 = 4 turns.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. MEA V CE = 1 V; T j =25 C. I (ma) C 3 Fig.2 Intermodulation distortion test circuit. Fig.3 DC current gain as a function of collector current. 1 C c (pf).8 MEA92 6 f T (GHz) MEA V CB (V) I (ma) 3 C I E =i e = ; f = 1 MHz; T j =25 C. V CE = 1 V; f = 5 MHz; T j =25 C. Fig.4 Collector capacitance as a function of collector-base voltage. Fig.5 Transition frequency as a function of collector current. November

6 5 F (db) 4 MEA921 6 F (db) 5 MEA I C (ma) f (GHz) 1 V CE = 1 V; Z s = opt.; f = 5 MHz; T amb =25 C. I c = 2 ma; V CE = 1 V; Z s = opt.; T amb =25 C. Fig.6 Minimum noise figure as a function of collector current. Fig.7 Minimum noise figure as a function of frequency. November

7 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max. 1.1 mm.1.9 b p c D E e e 1 H E L p Q v w OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT November

8 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November