DISCRETE SEMICONDUCTORS DATA SHEET. BFQ68 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
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1 DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995
2 DESCRIPTION PINNING NPN transistor mounted in a four-lead dual-emitter SOTA envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. PIN DESCRIPTION collector emitter 3 base 4 emitter page 4 3 Top view MBK87 Fig. SOTA. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CEO collector-emitter voltage open base 8 V I C collector current 3 ma P tot total power dissipation up to T c = C 4.5 W f T transition frequency I C = 4 ma; V CE = 5 V; f = 5 MHz; 4 GHz T j =5 C V o output voltage I c = 4 ma; V CE = 5 V; d im = 6 db; R L =75Ω; f (p+q r) = MHz; T amb =5 C.6 V P L output power at db gain compression I c = 4 ma; V CE = 5 V; R L =75Ω; f = 8 MHz; T amb =5 C ITO third order intercept point I c = 4 ma; V CE = 5 V; R L =75Ω; f = 8 MHz; T amb =5 C 8 dbm 47 dbm Product and environmental safety - toxic materials WARNING This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 995
3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 5 V V CEO collector-emitter voltage open base 8 V V EBO emitter-base voltage open collector V I C DC collector current 3 ma P tot total power dissipation up to T c = C 4.5 W T stg storage temperature 65 5 C T j junction temperature C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE R th j-c thermal resistance from junction to case K/W September 995 3
4 CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB = 5 V 5 µa h FE DC current gain I C = 4 ma; V CE = 5 V 5 75 f T transition frequency I C = 4 ma; V CE = 5 V; 4 GHz f = 5 MHz C c collector capacitance I E =i e = ; V CB = 5 V; f = MHz 3.8 pf C e emitter capacitance I C =i c = ; V EB =.5 V; f = MHz pf C re feedback capacitance I C = ; V CE = 5 V; f = MHz.3 pf C cs collector-stud capacitance note.8 pf G UM maximum unilateral power gain (note ) I C = 4 ma; V CE = 5 V; f = 8 MHz; T amb =5 C Notes. Measured with emitter and base grounded.. G UM is the maximum unilateral power gain, assuming S is zero and 3 db V o output voltage note 3.6 V P L ITO G UM output power at db gain compression (see Fig.) third order intercept point (see Fig.) S = log db. S S I C = 4 ma; V CE = 5 V; R L =75Ω; T amb =5 C; measured at f = 8 MHz 3. d im = 6 db (see Figs and 7) (DIN 454B); I C = 4 ma; V CE = 5 V; R L =75Ω; T amb =5 C; V p =V o at d im = 6 db; f p = MHz; V q =V o 6 db; f q = 83.5 MHz; V r =V o 6 db; f r = 85.5 MHz; measured at f (p+q r) = MHz. 4. I C = 4 ma; V CE = 5 V; R L =75Ω; T amb =5 C; P p = ITO 6 db; f p = 8 MHz; P q = ITO 6 db; f q = 8 MHz; measured at f (q p) = 8 MHz and at f (p q) = 799 MHz. 8 dbm note 4 47 dbm September 995 4
5 handbook, full pagewidth V BB. nf. nf V CC 75 Ω. nf L. kω 4.7 Ω. pf L. nf 8 Ω. pf. nf DUT 75 Ω.8 pf 4 Ω 4 Ω.68 pf MEA73 f = 4 to 86 MHz. L=L=5µH Ferroxcube choke. Fig. Intermodulation distortion MATV test circuit. handbook, halfpage MBB36 handbook, halfpage 6 MEA7 h FE f T (GHz) I C (ma) I (ma) 3 C V CE = V; T j =5 C. V CE = 5 V; f = 5 MHz; T j =5 C Fig.3 DC current gain as a function of collector current. Fig.4 Transition frequency as a function of collector current. September 995 5
6 6 handbook, halfpage Cc (pf) MEA7 4 handbook, halfpage gain (db) 3 MEA7 4 G UM V (V) CB Is I. f (GHz) I E =i e = ; f = MHz I C = 4 ma; V CE = 5 V; T amb =5 C Fig.5 Collector capacitance as a function of collector-base voltage. Fig.6 Gain as a function of frequency. handbook, halfpage d im (db) 3 MEA I C (ma) V CE = 5 V; V o =.6 V; f (p+q r) = MHz. Fig.7 Intermodulation distortion as a function of collector current. September 995 6
7 handbook, full pagewidth.5 MHz j j MEA74 I C = 4 ma; V CE = 5 V; T amb =5 C. Z o =5Ω. Fig.8 Common emitter input reflection coefficient (S ). handbook, full pagewidth 9 6 MHz ϕ.5..5 ϕ I C = 4 ma; V CE = 5 V; T amb =5 C. 9 MEA75 Fig.9 Common emitter forward transmission coefficient (S ). September 995 7
8 handbook, full pagewidth MHz.5..5 ϕ ϕ I C = 4 ma; V CE = 5 V; T amb =5 C. 9 MEA77 Fig. Common emitter reverse transmission coefficient (S ). handbook, full pagewidth j j MHz.5 MEA76 I C = 4 ma; V CE = 5 V; T amb =5 C. Z o =5Ω. Fig. Common emitter output reflection coefficient (S ). September 995 8
9 PACKAGE OUTLINE Studded ceramic package; 4 leads SOTA D ceramic BeO A Q metal c N D A N D w M A M W N 3 X M H detail X b L 4 α 3 H 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) N UNIT A b c D D D H L M M N N 3 Q W max mm UNC w.38 α 9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOTA September 995 9
10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 995
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DATA SHEET. CR2424S Video driver hybrid amplifier DISCRETE SEMICONDUCTORS Oct 23
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 995 Apr 04 File under Discrete Semiconductors, SC05 995 Oct 23 FEATURES Typical transition times (0 to 90%) with C L at 8.5 pf: 2.2 ns rise and 2.0
BFR91. Silicon NPN Planar RF Transistor. Vishay Semiconductors
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
INTEGRATED CIRCUITS DATA SHEET. TDA1526 Stereo-tone/volume control circuit. Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The device is designed as an active stereo-tone/volume control for car radios, TV receivers and mains-fed
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
BFG520W; BFG520W/X. NPN 9 GHz wideband transistors IMPORTANT NOTICE. use
BFGW; BFGW/X Rev. 4 November 7 Product data sheet IMPORTANT NOTICE Dear customer, As from October st, 6 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
BUT12AX. 1. Product profile. 2. Pinning information. Silicon diffused power transistor. 1.1 Description. 1.2 Features. 1.
M3D38 Rev. 6 June 24 Product data. Product profile. Description High voltage, high speed, NPN power transistor in a plastic package..2 Features Isolated package Fast switching..3 Applications Inverters
DISCRETE SEMICONDUCTORS DATA SHEET. BFS17W NPN 1 GHz wideband transistor. Product specification Supersedes data of November 1992.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 1992 1995 Sep 4 APPLICATIONS Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor
DATA SHEET. BGA2771 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 21 Oct 19 22 Aug 6 FEATURES Internally matched Wide frequency range Very flat gain High output power High linearity Unconditionally
DATA SHEET. BGA2776 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 21 Oct 19 22 Aug 6 FEATURES Internally matched Very wide frequency range Very flat gain High gain High output power Unconditionally
NPN wideband silicon germanium RF transistor
Rev. 1 22 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC
![BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC](/thumbs/72/67715622.jpg "BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. Type number [1] Package PNP Philips JEITA JEDEC")
65 V, 00 ma NPN general-purpose transistors Rev. 06 7 February 006 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
DISCRETE SEMICONDUCTORS DATA SHEET. PMBTA64 PNP Darlington transistor. Product specification Supersedes data of 2002 Nov 07.
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2002 Nov 07 2004 Jan 22 FETURES High current (max. 500 m) Low voltage (max. 30 V) High DC current gain (min. 10000). PPLICTIONS High input impedance
INTEGRATED CIRCUITS DATA SHEET. TDA5332T Double mixer/oscillator for TV and VCR tuners. Preliminary specification File under Integrated Circuits, IC02
INTEGRATED CIRCUITS DATA SHEET Double mixer/oscillator for TV and VCR File under Integrated Circuits, IC02 March 1989 GENERAL DESCRIPTION The is an integrated circuit that performs the mixer/oscillator
NPN wideband silicon RF transistor
Rev. 2 11 January 211 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
PEMD16; PUMD16. NPN/PNP resistor-equipped transistors; R1 = 22 kω, R2 = 47 kω. Type number Package PNP/PNP NPN/NPN complement complement
NPN/PNP resistor-equipped transistors; R = 22 kω, R2 = 47 kω Rev. 02 7 June 2005 Product data sheet. Product profile. General description NPN/PNP resistor-equipped transistors. Table : Product overview
DATA SHEET. PEMD2; PIMD2; PUMD2 NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DT SHEET NPN/PNP resistor-equipped transistors; R1 = 22 kω,r2=22kω Supersedes data of 2003 Jun 06 2004 pr 21 FETURES Built-in bias resistors Simplifies circuit design Reduces component
PEMH17; PUMH17. NPN/NPN resistor-equipped transistors; R1 = 47 kω, R2 = 22 kω. NPN/NPN Resistor-Equipped Transistors (RET).
NPN/NPN resistor-equipped transistors; R = 47 kω, R2 = 22 kω Rev. 02 3 May 2005 Product data sheet. Product profile. General description NPN/NPN Resistor-Equipped Transistors (RET). Table : Product overview
PEMB18; PUMB18. PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω. Type number Package NPN/PNP NPN/NPN complement complement
PNP/PNP resistor-equipped transistors; R1 = 4.7 kω, R2 = 10 kω Rev. 03 8 July 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors. Table 1: Product
DATA SHEET. TDA1558Q 2 x 22 W or 4 x 11 W single-ended car radio power amplifier INTEGRATED CIRCUITS
INTEGRATED CIRCUITS DATA SHEET 2 x 22 W or 4 x 11 W single-ended car File under Integrated Circuits, IC01 May 1992 FEATURES Requires very few external components Flexibility in use Quad single-ended or
Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3)
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
Silicon Bipolar Low Noise Microwave Transistors
Silicon Bipolar Low Noise Microwave Transistors MP42141 Features Case Styles Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) High Power Gain At 1.0 GHz 18.0 db Typical Gold Metalization Hermetic and
DATA SHEET. PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DT SHEET NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω Supersedes data of 2003 Sep 15 2004 pr 14 FETURES Built-in bias resistors Simplifies circuit design Reduces component
DISCRETE SEMICONDUCTORS DATA SHEET M3D088. PBSS5120T 20 V, 1 A PNP low V CEsat (BISS) transistor. Product specification 2003 Sep 29
DISCRETE SEMICONDUCTORS DT SHEET M3D088 2003 Sep 29 FETURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to less heat generation
DATA SHEET. BSR52 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Nov 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 26 2004 Nov 11 FEATURES PINNING High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
NPN 25 GHz wideband transistor
CMPAK-4 Rev. 2 13 September 211 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin
DISCRETE SEMICONDUCTORS DATA SHEET. BAP50-03 General purpose PIN diode. Product specification Supersedes data of 1999 May 10.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 May 10 2004 Feb 11 FEATURES PINNING Low diode capacitance Low diode forward resistance. APPLICATIONS PIN DESCRIPTION 1 cathode 2 anode General
DATA SHEET. TDA8510J 26 W BTL and 2 13 W SE power amplifiers INTEGRATED CIRCUITS May 18
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 1998 May 18 FEATURES Requires very few external components High output power Low output offset voltage (BTL channel) Fixed gain Diagnostic
DATA SHEET. TDA1514A 50 W high performance hi-fi amplifier INTEGRATED CIRCUITS. May Product specification File under Integrated Circuits, IC01
INTEGRATED CIRCUITS DATA SHEET TDA1514A 50 W high performance hi-fi amplifier File under Integrated Circuits, IC01 May 1992 GENERAL DESCRIPTION The TDA1514A integrated circuit is a hi-fi power amplifier
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BB145C Low-voltage variable capacitance diode. Preliminary specification 2001 Dec 11
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Low-voltage variable capacitance diode 2001 Dec 11 FEATURES Ultra small plastic SMD package Very low capacitance spread High capacitance ratio C1 to C4 ratio: