DISCRETE SEMICONDUCTORS DATA SHEET. BLW29 VHF power transistor

Transcription

1 DISCRETE SEMICONDUCTORS DATA SHEET August 1986

2 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 1 mw at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to T h = 25 C MODE OF OPERATION V CE V f MHz P L W c.w. class-b 13, > > 6 1,3 + j,68 18 j54 c.w. class-b 12, typ., 5 typ. 67 G p db η % z i Ω Y L ms PIN CONFIGURATION PINNING - SOT1 PIN DESCRIPTION halfpage c 1 collector 2 emitter 3 base 4 emitter b MBB12 e 2 MSB56 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August

3 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (V BE = ) peak value V CESM max. 36 V Collector-emitter voltage (open base) V CEO max. 18 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 2,75 A Collector current (peak value); f > 1 MHz I CM max. 8 A R.F. power dissipation (f > 1 MHz); T mb = 25 C P rf max. 53 W Storage temperature T stg 65 to + 15 C Operating junction temperature T j max. C I C (A) 1 T h = 7 C T mb = 25 C MGP414 6 P rf (W) 4 short-time operation during mismatch continuous r.f. operation derate by.3 W/K continuous d.c. operation derate by.25 W/K MGP V 2 CE (V) 5 T h ( C) Fig.2 D.C. SOAR. Fig.3 R.F. power dissipation; V CE 16,5 V; f 1 MHz. THERMAL RESISTANCE (dissipation = 15 W; T mb =77 C, i.e. T h = 7 C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 3,7 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 3,5 K/W From mounting base to heatsink R th mb-h =,45 K/W August

4 CHARACTERISTICS T j =25 C Collector-emitter breakdown voltage V BE = ; I C = 15 ma V (BR) CES > 36 V Collector-emitter breakdown voltage open base; I C = ma V (BR)CEO > 18 V Emitter-base breakdown voltage open collector; I E = 5 ma V (BR)EBO > 4 V Collector cut-off current V BE = ; V CE = 18 V I CES < 5 ma Second breakdown energy; L = 25 mh; f = 5 Hz open base E SBO > 4 mj R BE =Ω E SBR > 4 mj D.C. current gain (1) I C = 1,75 A; V CE =5 V h FE typ. 4 to 8 Collector-emitter saturation voltage (1) I C = 5 A; I B =1 A V CEsat typ. 1,5 V Transition frequency at f = MHz (1) I E = 1,75 A; V CB = 13,5 V f T typ. 9 MHz I E = 5 A; V CB = 13,5 V f T typ. 825 MHz Collector capacitance at f = 1 MHz I E =I e =;V CB = 13,5 V C c typ. 43 pf Feedback capacitance at f = 1 MHz I C = ma; V CE = 13,5 V C re typ. 27 pf Collector-stud capacitance C cs typ. 2 pf Note 1. Measured under pulse conditions: t p µs; δ,2. August

5 6 MGP MGP417 h FE 4 V CE = 13.5 V 5 V C c (pf) 5 typ 5 I C (A) V CB (V) Fig.4 Typical values; T j =25 C. Fig.5 I E =I e = ; f = 1 MHz; T j = 25 C. 15 handbook, full pagewidth MGP418 f T (MHz) typ I E (A) Fig.6 V CB = 13,5 V; f = MHz; T j = 25 C. August

6 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-b circuit); T h = 25 C f (MHz) V CE (V) P L (W) P S (W) G p (db) I C (A) η (%) z i (Ω) Y L (ms) ,5 15 < 1,5 > < 1,85 > 6 1,3 + j,68 18 j ,5 15 typ. 1,34 typ.,5 typ. 1,8 typ. 67 handbook, full pagewidth 5 Ω C1 C2 L1 C3a T.U.T. L3 C3b L4 C4 L5 C5 L7 R2 C6 C7 5 Ω R1 L2 L6 +V CC MGP419 Fig.7 Test circuit; c.w. class-b. List of components: C1 = 2,5 to pf film dielectric trimmer (cat. no ) C2 = C6 = C7 = 4 to 4 pf film dielectric trimmer (cat. no ) C3a = C3b = 47 pf ceramic capacitor (5 V) C4 = 1 nf ceramic capacitor C5 = nf polyester capacitor L1 = 1 2 turn Cu wire (1,6 mm); int. dia. 6, mm; leads 2 5 mm L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no ) L3 = L4 = strip (12 mm 6 mm); taps for C3a and C3b at 5 mm from transistor L5 = turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6, mm; leads 2 5 mm L7 = 2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6, mm; leads 2 5 mm L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = R2 = Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8. August

7 15 handbook, full pagewidth 72 L2 L6 R1 C4 C5 R2 +V CC C1 C2 L1 strip C3a L3 L4 L5 L7 C6 C7 C3b rivet MGP4 Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August

8 3 P L (W) T h = 25 C MGP G p (db) G p MGP η (%) 15 T h = 25 C 75 7 C η T h = 7 C 25 C C P S (W) V CE = 13,5 V; V CE = 12, 5 V 3 P L (W) V CE = 13,5 V; V CE = 12, 5 V Fig.9 Typical values; f = 175 MHz.. Fig. Typical values; f = 175 MHz. 25 P Lnom (W) (VSWR = 1) 15 VSWR = 5 5 MGP423 The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (P S /P Snom ) increases linearly with supply over-voltage ratio. P S P Snom V CE 1.3 V CEnom OPERATING NOTE Below 7 MHz a base-emitter resistor of Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. T h =7 C; R th mb-h =,45 K/W; V CEnom = 13,5 V or 12,5 V; P S = P Snom at V CEnom and VSWR = 1 Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; August

9 MGP C L MGP425 r i, x i (Ω) R L (Ω) R L RL C L (pf) 5 5 r i x i r i 2.5 x i C L f (MHz) Typical values; V CE = 13,5 V; P L = 15 W; T h = 25 C f (MHz) 5 Typical values; V CE = 13,5 V; P L = 15 W; T h = 25 C. Fig.12 Fig.13 3 MGP426 G p (db) 25 5 f (MHz) Typical values; V CE = 13,5 V; P L = 15 W; T h = 25 C. Fig.14 August

10 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT1A D A Q c N N 1 D 1 D 2 A w 1 M A M W N 3 X M 1 H b detail X L 4 3 H mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 D 2 H L M M 1 N N 1 N 3 Q W mm inches UNC w OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT1A August 1986

11 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August