DISCRETE SEMICONDUCTORS DATA SHEET M3D058. BLF346 VHF power MOS transistor. Product specification Supersedes data of 1996 Oct 02.

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1 DISCRETE SEMICONDUCTORS DATA SHEET M3D58 Supersedes data of 1996 Oct 2 23 Sep 26

2 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Linear amplifier applications in television transmitters and transposers. PINNING - SOT119A PIN 1 source 2 source 3 gate 4 drain 5 source 6 source DESCRIPTION DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119A flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (V GS ) information is provided for matched pair applications. Refer to the General Section of the associated Data Handbook for further information g d s CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-68, SNW-FQ-32A, and SNW-FQ-32B. 5 MAM268 Fig.1 Simplified outline and symbol. 6 QUICK REFERENCE DATA RF performance in a linear amplifier. MODE OF OPERATION f (MHz) V DS (V) I D (A) Class-A T h ( C) P L (W) G p (db) d im (db) (1) 7 >24 > typ. 3 typ Note 1. Three-tone test method (vision carrier 8 db, sound carrier 7 db, sideband signal 16 db), zero db corresponds to peak synchronization level. Product and environmental safety - toxic materials WARNING This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 23 Sep 26 2

3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage 65 V V GS gate-source voltage ±2 V I D drain current (DC) 13 A P tot total power dissipation T mb 25 C 13 W T stg storage temperature C T j junction temperature 2 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to T mb =25 C; P tot = 13 W 1.35 K/W mounting base thermal resistance from mounting T mb =25 C; P tot = 13 W.2 K/W base to heatsink R th j-mb R th mb-h 5 MRA931 2 MGG14 I D (A) P tot (W) 1 (1) (2) 15 (2) 1 1 (1) V 1 2 DS (V) T h ( C) (1) Current is this area may be limited by R DSon. (2) T mb =25 C. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power derating curves. 23 Sep 26 3

4 CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = ; I D =5mA 65 V I DSS drain-source leakage current V GS = ; V DS =28V 2.5 ma I GSS gate-source leakage current V GS = ±2 V; V DS = 1 µa V GSth gate-source threshold voltage V DS = 1 V; I D =5mA V V GS gate-source voltage difference V DS = 1 V; I D =5mA 1 mv of matched pairs g fs forward transconductance V DS = 1 V; I D =5A S R DSon drain-source on-state resistance V GS = 1 V; I D =5A.2.3 Ω I DSX on-state drain current V GS = 1 V; V DS =1V 22 A C is input capacitance V GS = ; V DS = 28 V; f = 1 MHz 225 pf C os output capacitance V GS = ; V DS = 28 V; f = 1 MHz 18 pf C rs feedback capacitance V GS = ; V DS = 28 V; f = 1 MHz 25 pf V GS group indicator GROUP LIMITS (V) GROUP LIMITS (V) MIN. MAX. MIN. MAX. A O B P C Q D R E S F T G U H V J W K X L Y M Z N Sep 26 4

5 2 T.C. (mv/k) MGG15 4 I D (A) MGG I D (A) V GS (V) V DS =1V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. V DS = 1 V; T j =25 C. Fig.5 Drain current as a function of gate-source voltage; typical values. 34 R DS on (mω) 28 MGG17 8 C (pf) 6 C os MRA C is T j ( C) V DS (V) I D = 5 A; V GS =1V. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values. V GS = ; f = 1 MHz. Fig.7 Input and output capacitance as functions of drain-source voltage; typical values. 23 Sep 26 5

6 3 MGG18 C rs (pf) V DS (V) V GS = ; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION RF performance in a linear amplifier (common source class-a circuit). R th mb-h =.2 K/W; Z L = j.2 Ω unless otherwise specified. MODE OF OPERATION f (MHz) V DS (V) I D (A) Class-A T h ( C) P o sync (W) G p (db) d im (db) (1) 7 >24 > typ. 3 typ typ. 2 typ typ. 22 typ Note 1. Three-tone test method (vision carrier 8 db, sound carrier 7 db, sideband signal 16 db), zero db corresponds to peak synchronization level. Ruggedness in class-a operation The is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: V DS = 28 V; f = 225 MHz at rated output power. 23 Sep 26 6

7 5 d im (db) MGG (1) (2) P o sync (W) (1) T h =7 C. (2) T h =25 C. Fig.9 Intermodulation distortion as a function of peak synchronized output power. handbook, full pagewidth 5 Ω input C1 C2 L2 C4 L3 DUT L4 C11 C1 L7 C14 C16 C15 L8 5 Ω output L1 C3 C5 R2 R1 C6 C8 C9 R5 L5 C12 C7 R3 R4 V B V DS L6 C13 MGG113 Fig.1 Test circuit for class-a operation at f = 225 MHz. 23 Sep 26 7

8 List of components (see Figs 1 and 11). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 film dielectric trimmer 2 to 18 pf C2 multilayer ceramic chip capacitor; 1 pf, 5 V note 1 C3, C15, C16 film dielectric trimmer 4 to 4 pf C4, C5 multilayer ceramic chip capacitor; 56 pf, 5 V note 1 C6, C12 multilayer ceramic chip capacitor; 68 pf, 5 V note 1 C7, C8, C9 multilayer ceramic chip capacitor 1 nf, 5 V C1, C11 multilayer ceramic chip capacitor; 43 pf, 5 V note 1 C13 electrolytic capacitor 1 µf, 63 V C14 multilayer ceramic chip capacitor; 27 pf, 5 V note 1 L1 4 turns enamelled.7 mm copper wire 42.4 nh length 4 mm; int. dia. 3 mm; leads 2 5mm L2 stripline; note 2 5 Ω length 49 mm; width 2.8 mm L3, L4 stripline; note 2 31 Ω length 11.5 mm; width 6 mm L5 2 turns enamelled 1.5 mm copper wire 18.7 nh length 8 mm; int. dia. 4 mm; leads 2 5mm L6 grade 3B Ferroxcube RF choke L7 stripline; note 2 31 Ω length 4 mm; width 6 mm L8 3 turns enamelled 1.5 mm copper wire 28.8 nh length 8 mm; int. dia. 4 mm; leads 2 5mm R1 metal film resistor 1 kω,.4 W R2 metal film resistor 1 kω,.4 W R3 1 turns cermet potentiometer 1 Ω R4 metal film resistor 316 kω,.4 W R5 metal film resistor 1 Ω,.4 W Notes 1. American Technical Ceramics capacitor, type 1B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board with epoxy fibre-glass dielectric (ε r = 4.5); thickness 1 16 inch. 23 Sep 26 8

9 handbook, full pagewidth 15 strap strap 7 strap strap mounting screws (8 ) R3 +VDS C1 R2 C7 C6 R1 C12 L6 R5 L5 C8 C9 C13 C16 L1 C2 L2 C4 C5 L3 L4 C1 C11 L7 C14 L8 C3 C15 MGG114 Dimensions in mm. The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow s. Fig.11 Component layout for 225 MHz class-a test circuit. 23 Sep 26 9

10 4 Z i (Ω) 2 r i MGG11 2 Z L (Ω) R L MGG X L 4 x i f (MHz) f (MHz) Class-A operation; V DS = 28 V; I D = 3 A; P L = 3 W; T h =7 C. Class-A operation; V DS = 28 V; I D = 3 A; P L = 3 W; T h =7 C. Fig.12 Input impedance as a function of frequency (series components); typical values. Fig.13 Load impedance as a function of frequency (series components); typical values. 2 G p (db) 16 MGG Z i Z L MBA f (MHz) Class-A operation; V DS = 28 V; I D = 3 A; P L = 3 W; T h =7 C. Fig.14 Definition of MOS impedance. Fig.15 Power gain as a function of frequency; typical values. 23 Sep 26 1

11 scattering parameters V DS = 28 V; I D = 3 ma; note 1. f (MHz) s 11 s 21 s 12 s 22 s 11 Φ s 21 Φ s 12 Φ s 22 Φ Note 1. For more extensive s-parameters see internet: 23 Sep 26 11

12 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U 1 H 1 B w 2 M C M b 2 c H U 2 p D 1 U 3 D A w 1 M A M B M b 1 b w 3 M Q e 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b 1 b 2 c D D 1 e F H H 1 p Q q U 1 U 2 U 3 w 1 w 2 w mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT119A Sep 26 12

13 DATA SHEET STATUS LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 23 Sep 26 13

14 a worldwide company Contact information For additional information please visit Fax: For sales offices addresses send to: sales.addresses@ Koninklijke Philips Electronics N.V. 23 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /5/pp14 Date of release: 23 Sep 26 Document order number: